JP2004359933A - Sealing material for optical element - Google Patents
Sealing material for optical element Download PDFInfo
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- JP2004359933A JP2004359933A JP2004056772A JP2004056772A JP2004359933A JP 2004359933 A JP2004359933 A JP 2004359933A JP 2004056772 A JP2004056772 A JP 2004056772A JP 2004056772 A JP2004056772 A JP 2004056772A JP 2004359933 A JP2004359933 A JP 2004359933A
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- 239000003566 sealing material Substances 0.000 title claims abstract description 31
- 230000003287 optical effect Effects 0.000 title claims abstract description 25
- 125000001424 substituent group Chemical group 0.000 claims abstract description 48
- 125000000524 functional group Chemical group 0.000 claims abstract description 20
- 239000004593 Epoxy Substances 0.000 claims abstract description 14
- 125000001931 aliphatic group Chemical group 0.000 claims abstract description 10
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 claims abstract description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 25
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 21
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 18
- -1 3,4-epoxycyclohexyl group Chemical group 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 125000003700 epoxy group Chemical group 0.000 claims description 7
- 150000001721 carbon Chemical group 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000003054 catalyst Substances 0.000 claims description 6
- 150000002367 halogens Chemical group 0.000 claims description 6
- 125000005386 organosiloxy group Chemical group 0.000 claims description 6
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 6
- 125000002947 alkylene group Chemical group 0.000 claims description 5
- 238000004132 cross linking Methods 0.000 claims description 5
- 125000002993 cycloalkylene group Chemical group 0.000 claims description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 5
- 229910003849 O-Si Inorganic materials 0.000 claims description 4
- 229910003872 O—Si Inorganic materials 0.000 claims description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 claims description 4
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 claims description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 22
- 229910052710 silicon Inorganic materials 0.000 abstract description 17
- 238000004383 yellowing Methods 0.000 abstract description 2
- 238000002845 discoloration Methods 0.000 abstract 1
- 238000009833 condensation Methods 0.000 description 20
- 230000005494 condensation Effects 0.000 description 19
- 238000000034 method Methods 0.000 description 17
- 239000000203 mixture Substances 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 12
- 239000003822 epoxy resin Substances 0.000 description 12
- 229920000647 polyepoxide Polymers 0.000 description 12
- 238000002834 transmittance Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000008393 encapsulating agent Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 229910020489 SiO3 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 125000003566 oxetanyl group Chemical group 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 230000006750 UV protection Effects 0.000 description 3
- 150000008065 acid anhydrides Chemical class 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000003431 cross linking reagent Substances 0.000 description 3
- 239000012153 distilled water Substances 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- 239000004611 light stabiliser Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 3
- 125000005372 silanol group Chemical group 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 230000002194 synthesizing effect Effects 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 3
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000010538 cationic polymerization reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006459 hydrosilylation reaction Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002685 polymerization catalyst Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- BRKFQVAOMSWFDU-UHFFFAOYSA-M tetraphenylphosphanium;bromide Chemical compound [Br-].C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 BRKFQVAOMSWFDU-UHFFFAOYSA-M 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- QYCGBAJADAGLLK-UHFFFAOYSA-N 1-(cyclohepten-1-yl)cycloheptene Chemical group C1CCCCC=C1C1=CCCCCC1 QYCGBAJADAGLLK-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 125000004975 3-butenyl group Chemical group C(CC=C)* 0.000 description 1
- VAFAOLQATIQPHK-UHFFFAOYSA-N 352538-78-4 Chemical group O1[Si](O[Si](C)(CC=C)C)(O2)O[Si](O3)(C4CCCC4)O[Si](O4)(C5CCCC5)O[Si]1(C1CCCC1)O[Si](O1)(C5CCCC5)O[Si]2(C2CCCC2)O[Si]3(C2CCCC2)O[Si]41C1CCCC1 VAFAOLQATIQPHK-UHFFFAOYSA-N 0.000 description 1
- CXZBMXTURQVMCU-UHFFFAOYSA-N 3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione;7a-methyl-4,5,6,7-tetrahydro-3ah-2-benzofuran-1,3-dione Chemical compound C1CCCC2C(=O)OC(=O)C21.C1CCCC2C(=O)OC(=O)C21C CXZBMXTURQVMCU-UHFFFAOYSA-N 0.000 description 1
- LQOPXMZSGSTGMF-UHFFFAOYSA-N 6004-79-1 Chemical compound C1CC2C3C(=O)OC(=O)C3C1C2 LQOPXMZSGSTGMF-UHFFFAOYSA-N 0.000 description 1
- 241000566146 Asio Species 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 238000010539 anionic addition polymerization reaction Methods 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- IKWKJIWDLVYZIY-UHFFFAOYSA-M butyl(triphenyl)phosphanium;bromide Chemical compound [Br-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCC)C1=CC=CC=C1 IKWKJIWDLVYZIY-UHFFFAOYSA-M 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- OZEHOHQZIRILDX-UHFFFAOYSA-N ctk1b7797 Chemical compound O=C1OC(=O)C2C1C1(C)CC2CC1 OZEHOHQZIRILDX-UHFFFAOYSA-N 0.000 description 1
- 125000004956 cyclohexylene group Chemical group 0.000 description 1
- 125000002433 cyclopentenyl group Chemical group C1(=CCCC1)* 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000004979 cyclopentylene group Chemical group 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- JHYNXXDQQHTCHJ-UHFFFAOYSA-M ethyl(triphenyl)phosphanium;bromide Chemical compound [Br-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CC)C1=CC=CC=C1 JHYNXXDQQHTCHJ-UHFFFAOYSA-M 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 239000011968 lewis acid catalyst Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- LSEFCHWGJNHZNT-UHFFFAOYSA-M methyl(triphenyl)phosphanium;bromide Chemical compound [Br-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(C)C1=CC=CC=C1 LSEFCHWGJNHZNT-UHFFFAOYSA-M 0.000 description 1
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 125000005574 norbornylene group Chemical group 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 239000002530 phenolic antioxidant Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 150000004714 phosphonium salts Chemical group 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000012321 sodium triacetoxyborohydride Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- RKHXQBLJXBGEKF-UHFFFAOYSA-M tetrabutylphosphanium;bromide Chemical compound [Br-].CCCC[P+](CCCC)(CCCC)CCCC RKHXQBLJXBGEKF-UHFFFAOYSA-M 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- ZTXFOCMYRCGSMU-UHFFFAOYSA-M tetramethylphosphanium;bromide Chemical compound [Br-].C[P+](C)(C)C ZTXFOCMYRCGSMU-UHFFFAOYSA-M 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Abstract
Description
本発明は、置換基含有シルセスキオキサンからなる光素子用封止材及び該封止材を使用した光素子に関し、とくに紫外乃至青色光素子用に好適な光素子用封止材及び該封止材を使用した光素子に関する。 The present invention relates to an optical element encapsulant comprising a silsesquioxane having a substituent and an optical element using the encapsulant, and particularly to an optical element encapsulant and an optical element suitable for an ultraviolet to blue light element. The present invention relates to an optical element using a stopper.
近紫外光素子を含む紫外乃至青色光素子は、光情報通信、光情報記録、ディスプレイ、バイオテクノロジー等の分野で研究開発が進んでおり、次世代型素子として注目されている。なお、紫外乃至青色光素子とは、紫外乃至青色の領域の光に関する光素子をいい、典型的には、ピーク波長が３５０〜４９０ｎｍの光に関する光素子をいう。概ね、可視光線の短波長端である波長４００ｎｍ程度未満の光は紫外線であり、光素子に関する紫外線としては、３００〜３６０ｎｍの深紫外領域や波長３６０〜４００ｎｍ程度の近紫外領域等が知られている。波長４００〜４３５ｎｍ程度の光は紫の可視光線である。波長４３５〜４９０ｎｍ程度の光は青〜緑青色の可視光線であるが、便宜上、本明細書では青色光という。光素子には、各種レーザー、発光ダイオード、受光素子、複合光素子、光回路部品、光集積回路等がある。例えば、近紫外線に関する光素子（近紫外光素子ともいう）は、発光ダイオード（ＬＥＤ）、半導体レーザー（ＬＤ）及びこれらの発光源からの光を導波、受光する各種素子を含む。なかでも、近紫外ＬＥＤは、ピーク波長が概ね３６０〜４００ｎｍ程度の近紫外線を発光するＬＥＤである。ＬＥＤは、従来主として表示用途等に使用されてきたが、近年、高発光効率のＬＥＤの出現により照明用途への適用が可能となり、白色発光ダイオードを用いた省エネルギー効果の高い照明の実用化が試みられている。可視光のＬＥＤは赤、緑、青のものが開発されており、これらを組み合わせてマルチチップタイプの白色ＬＥＤが実現されているが、いずれか１色のＬＥＤチップの故障があると白色光を得ることができなくなる欠点を有する。また、青色発光ＬＥＤと黄色発光蛍光体とを組み合わせて補色関係の２色から白色光を得る方式も開発されているが、この白色光には演色性がない。そこで、近紫外ＬＥＤ発光で赤、青、緑発光蛍光体を励起して白色光を発光させる技術が注目されている。 Ultraviolet to blue light elements including near-ultraviolet light elements are being researched and developed in fields such as optical information communication, optical information recording, displays, and biotechnology, and are attracting attention as next-generation elements. The ultraviolet to blue light element refers to an optical element relating to light in the ultraviolet to blue region, and typically refers to an optical element relating to light having a peak wavelength of 350 to 490 nm. Generally, light having a wavelength of less than about 400 nm, which is a short wavelength end of visible light, is ultraviolet light. As ultraviolet light related to an optical element, a deep ultraviolet region having a wavelength of 300 to 360 nm or a near ultraviolet region having a wavelength of approximately 360 to 400 nm is known. I have. Light having a wavelength of about 400 to 435 nm is violet visible light. Light having a wavelength of about 435 to 490 nm is visible light of blue to greenish blue, but is referred to as blue light in this specification for convenience. Optical devices include various lasers, light emitting diodes, light receiving devices, composite optical devices, optical circuit components, optical integrated circuits, and the like. For example, an optical element related to near ultraviolet light (also referred to as near ultraviolet light element) includes a light emitting diode (LED), a semiconductor laser (LD), and various elements that guide and receive light from these light emitting sources. Above all, near-ultraviolet LEDs are LEDs that emit near-ultraviolet light having a peak wavelength of about 360 to 400 nm. Conventionally, LEDs have been used mainly for display purposes, but recently, the emergence of LEDs with high luminous efficiency has made it possible to apply them to lighting applications, and attempts have been made to commercialize lighting with high energy-saving effects using white light emitting diodes. Have been. Red, green and blue LEDs for visible light have been developed, and a multi-chip white LED has been realized by combining these. However, if any one of the LED chips fails, white light is emitted. It has the disadvantage that it cannot be obtained. In addition, a method of obtaining white light from two complementary colors by combining a blue light emitting LED and a yellow light emitting phosphor has been developed, but this white light has no color rendering properties. Therefore, a technique of exciting red, blue, and green light-emitting phosphors by near-ultraviolet LED light emission to emit white light has attracted attention.
しかしながら、従来、ＬＥＤ等の封止に使用されてきた透明エポキシ樹脂は、可視光や紫外線により経時的に黄変するため素子の寿命が短いという問題があった。特に近紫外線に照射されると急速に透過率が低下し、耐久性のある近紫外ＬＥＤの実装が困難であった。そこで、近紫外線にさらされても黄変しない近紫外ＬＥＤ封止材が切望されていた。また、青色ＬＥＤにおいては、発光をより高輝度とするためにはより強電流にする必要があるが、この場合に封止材の耐久性が問題となってくるのであって、この場合にも現実には紫外乃至近紫外用ＬＥＤと同レベルの耐久性が要求されている。 However, conventionally, a transparent epoxy resin used for encapsulating an LED or the like has a problem in that the life of the element is short because the epoxy resin is yellowed over time due to visible light or ultraviolet light. In particular, when irradiated with near-ultraviolet light, the transmittance is rapidly reduced, and it is difficult to mount a durable near-ultraviolet LED. Therefore, a near-ultraviolet LED encapsulant that does not yellow even when exposed to near-ultraviolet light has been desired. Further, in the case of a blue LED, it is necessary to use a higher current in order to make the light emission have higher luminance. In this case, however, the durability of the sealing material becomes a problem. In reality, the same level of durability as an ultraviolet or near-ultraviolet LED is required.
一方、ケイ素を含んだネットワーク型オリゴマーであるシルセスキオキサンは、エレクトロニクス、フォトニクス等の分野への応用が試みられており、例えば、オキセタン環含有シルセスキオキサンを硬化させてなる高分子膜を用いた光導波路素子（例えば、特許文献１参照。）や、水素シルセスキオキサンとコロイダルシリカからなる紫外線透過性樹脂コーティング（例えば、特許文献２参照。）等が知られている。しかしながら、これらの技術は光素子用の封止材として長寿命に使用可能な技術であるか否かは一切不明である。すなわち、半導体素子等においては、外部環境から保護して各種信頼性を確保し、実装を容易にするためパッケージが必要であり、そのために封止材が使用されるのであるが、封止材には、素子の信頼性を確保するために、接着性、耐湿性、耐熱衝撃性等がきびしく要求され、高Ｔｇと少なくとも１００ミクロン程度以上の塗布厚みが要求される。これに対して、これらの従来技術は、いずれも光導波路を形成するものであるから、封止材に関する技術分野とは技術分野を異にし、また、封止材に要求される形成厚みを実現してエポキシ樹脂の代わりに使用することができるというものではない。 On the other hand, silsesquioxane, which is a network-type oligomer containing silicon, has been attempted to be applied to fields such as electronics and photonics.For example, a polymer film obtained by curing an oxetane ring-containing silsesquioxane is used. The used optical waveguide element (for example, see Patent Document 1), and an ultraviolet-transparent resin coating made of hydrogen silsesquioxane and colloidal silica (for example, see Patent Document 2) are known. However, it is unclear at all whether these technologies can be used for a long life as a sealing material for an optical element. In other words, in semiconductor devices, etc., a package is required to protect from the external environment to ensure various reliability and to facilitate mounting, and a sealing material is used for that purpose. In order to ensure the reliability of the element, adhesiveness, moisture resistance, thermal shock resistance and the like are strictly required, and a high Tg and a coating thickness of at least about 100 microns are required. On the other hand, since these conventional technologies all form an optical waveguide, the technical field is different from the technical field related to the sealing material, and the forming thickness required for the sealing material is realized. It does not mean that it can be used instead of an epoxy resin.
上述の現状に鑑みて、本発明は、紫外線にさらされても黄変せず、黄変による短寿命化を克服することができ、エポキシ樹脂の代わりに使用することができて耐久性に優れ、紫外乃至青色光素子に好適な光素子用封止材を提供することを目的とする。 In view of the above situation, the present invention does not yellow even when exposed to ultraviolet rays, can overcome the shortened life due to yellowing, can be used in place of epoxy resin, and has excellent durability It is an object of the present invention to provide an optical element sealing material suitable for an ultraviolet to blue light element.
本発明者らは上記課題を解決するべく鋭意検討した結果、オキセタニル基、カルボニル基、窒素、イオウ等を含有する置換基を有するシルセスキオキサンは紫外線にさらすと早期に黄変するものの、特定種類の側鎖を有する反応性シルセスキオキサンの架橋物は紫外線の透過性を維持し得ることを見いだし、この知見に基づいて本発明を完成した。
すなわち、本発明は、脂肪族不飽和結合基、エポキシ環、及び、Ｓｉ−Ｈ結合を有する置換されていてもよいシリル基からなる群から選択された少なくとも１種の官能基を少なくとも２つ有する置換基含有シルセスキオキサンからなる光素子用封止材である。
The present inventors have conducted intensive studies to solve the above-mentioned problems, and as a result, silsesquioxane having a substituent containing an oxetanyl group, a carbonyl group, nitrogen, sulfur, etc., is yellowed at an early stage when exposed to ultraviolet light. The inventors have found that a crosslinked product of a reactive silsesquioxane having various kinds of side chains can maintain the transmittance of ultraviolet rays, and based on this finding, completed the present invention.
That is, the present invention has at least two functional groups selected from the group consisting of an aliphatic unsaturated bond group, an epoxy ring, and an optionally substituted silyl group having a Si—H bond. It is a sealing material for optical elements comprising a silsesquioxane having a substituent.
本発明の１態様は、置換基含有シルセスキオキサンが、一般式（１）で表される籠型構造体のシルセスキオキサンの少なくとも１種である。
（Ｘ−Ｒ−Ｓｉ）ｎ・Ｏ（３ｎ−ｍ）／２（ＯＨ）ｍ−ａ・（Ｒ′）ａ （１）
式（１）中、ｎは４〜１８の整数、ｍは０又はｎ＋２以下の整数、ただし、ｍが０のときはｎは６〜１８の偶数である。ａは０〜ｍの整数である。複数のＲは、同一又は異なって、直接結合、ハロゲン置換基を有していてもよい炭素数１〜２０のアルキレン基、炭素数５〜１２のシクロアルキレン基、エーテル結合を含有する炭素数１〜２０の２価の炭化水素基、エステル結合を含有する炭素数１〜２０の２価の炭化水素基（エステル結合中の炭素原子を含まない。以下同じ。）、及び、置換基を有していてもよいオルガノシロキシ基を含有する炭素数１〜１２の２価の炭化水素基（置換基中の炭素原子を含まない。以下同じ。）からなる群から選択された少なくとも１種である。複数のＸは、同一又は異なって、エポキシ基、３，４−エポキシシクロヘキシル基、ビニル基、及び、Ｒとともにヒドロシリル基を構成していてもよい水素原子からなる群から選択される少なくとも１種であり、Ｒ′は、−Ｏ−Ｒ′′又は−Ｏ−Ｓｉ（Ｒ′′）３（Ｒ′′は水素原子であってもよい置換基。ただし、Ｒ′′が複数あるときは同一でも異なっていてもよい。）を表し、かつ、複数のＸ及びＲ′′のうち少なくとも二つは架橋点を形成し得るものである。ただし、Ｒ′が複数あるときは同一でも異なっていてもよい。
本発明の他の態様においては、さらに、硬化剤、又は、硬化剤及び硬化触媒を含有する。
本発明はまた、上記反応性オリゴマーの架橋物で封止されてなるピーク波長が３５０〜４９０ｎｍの光に関する光素子、とくに、ピーク波長が３５０〜４９０ｎｍの光を発光するＬＥＤ素子でもある。
In one embodiment of the present invention, the silsesquioxane having a substituent is at least one silsesquioxane having a cage structure represented by the general formula (1).
(X-R-Si) n · O (3 nm) / 2 (OH) ma · (R ′) a (1)
In the formula (1), n is an integer of 4 to 18, m is 0 or an integer of n + 2 or less, provided that when m is 0, n is an even number of 6 to 18. a is an integer of 0 to m. A plurality of Rs may be the same or different and each may be a direct bond, an alkylene group having 1 to 20 carbon atoms which may have a halogen substituent, a cycloalkylene group having 5 to 12 carbon atoms, or a carbon atom containing an ether bond. -20 to 20 divalent hydrocarbon groups, divalent hydrocarbon groups having 1 to 20 carbon atoms containing an ester bond (not including carbon atoms in the ester bond; the same applies hereinafter), and a substituent. At least one selected from the group consisting of a divalent hydrocarbon group having 1 to 12 carbon atoms and containing an optionally substituted organosiloxy group (not including the carbon atom in the substituent; the same applies hereinafter). A plurality of Xs are the same or different and are at least one selected from the group consisting of an epoxy group, a 3,4-epoxycyclohexyl group, a vinyl group, and a hydrogen atom which may form a hydrosilyl group together with R. R ′ is —O—R ″ or —O—Si (R ″) 3 (R ″ is a substituent which may be a hydrogen atom. However, when there are a plurality of R ″ s, they may be the same. And at least two of X's and R '''s can form a crosslinking point. However, when there are a plurality of R's, they may be the same or different.
In another embodiment of the present invention, the composition further contains a curing agent or a curing agent and a curing catalyst.
The present invention is also an optical element relating to light having a peak wavelength of 350 to 490 nm, which is sealed with a crosslinked product of the reactive oligomer, and particularly an LED element that emits light having a peak wavelength of 350 to 490 nm.
本発明は上述の構成により、紫外乃至青色領域、とくにピーク波長が３５０〜４９０ｎｍの領域で透明であるのみならず、紫外線を浴びても黄変することがない。また、Ｔｇを好ましくは８０℃以上、より好ましくは１００℃以上に達成することができる。本発明は、封止材に要求される形成厚みを実現してエポキシ樹脂の代わりに使用することができる耐久性に優れた紫外乃至青色光素子用封止材を提供することができる。
以下、本発明を詳細に説明する。
According to the above configuration, the present invention is not only transparent in an ultraviolet to blue region, particularly a region having a peak wavelength of 350 to 490 nm, and does not yellow even when exposed to ultraviolet rays. Moreover, Tg can be preferably attained at 80 ° C. or higher, more preferably at 100 ° C. or higher. ADVANTAGE OF THE INVENTION This invention can provide the sealing material for ultraviolet to blue light elements excellent in durability which can realize the formation thickness required of a sealing material and can be used instead of an epoxy resin.
Hereinafter, the present invention will be described in detail.
シルセスキオキサンは、通常、ＡＳｉＱ３（Ａは、水素原子、アルキル基、アルケニル基、アリール基、アラルキル基等、Ｑはハロゲン、アルコキシ基等）で表される３官能性有機ケイ素化合物の加水分解、重縮合により合成されるポリシロキサンであってＡＳｉＯ３／２単位を有する。シルセスキオキサンの分子配列の形状は、代表的には無定形構造、ラダー型構造、籠型（完全縮合ケージ型）構造又はその部分開裂構造体（籠型構造からケイ素原子のうちの一部が欠けた構造や籠型構造の一部のケイ素−酸素結合が切断された構造のもの）等が知られている。なお、Ｓｉ原子に結合する基が水素原子のみであるシルセスキオキサンに対して、Ｓｉ原子に結合する基が水素原子のみではなく、他の種類の基を、水素原子とともに、又は、水素原子に代えて、含有するシルセスキオキサンを、本明細書中、置換基含有シルセスキオキサンという。 Silsesquioxane is usually a hydrolyzate of a trifunctional organosilicon compound represented by ASiQ 3 (A is a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, an aralkyl group, etc., and Q is a halogen, an alkoxy group, etc.). Polysiloxane synthesized by decomposition and polycondensation and having ASiO 3/2 units. The molecular arrangement of silsesquioxane typically has an amorphous structure, a ladder structure, a cage structure (completely condensed cage structure) or a partially cleaved structure thereof (from a cage structure to a part of silicon atoms). Or a structure in which a silicon-oxygen bond is partially broken in a cage-shaped structure) or the like. It should be noted that, in contrast to silsesquioxane in which the group bonding to the Si atom is only a hydrogen atom, the group bonding to the Si atom is not limited to the hydrogen atom, and another type of group may be replaced with a hydrogen atom or a hydrogen atom. In the present specification, the contained silsesquioxane is referred to as a substituted silsesquioxane.
本発明における置換基含有シルセスキオキサンは、これらのシルセスキオキサン化合物のうち、いずれの構造のものであってもよく、また、それらの混合物であってもよい。このようなシルセスキオキサンの具体的な構造体は、例えば、
（ｉ）上記式（１）で表される籠型構造体のシルセスキオキサンにおいて、ｍ及びａが０の場合の（Ｘ−Ｒ−ＳｉＯ３／２）ｎで表される籠型構造体、
（ｉｉ）上記式（１）においてａが０の場合の（Ｘ−Ｒ−ＳｉＯ３／２）ｎ（Ｏ１／２Ｈ）ｍで表される籠型構造体の部分開裂構造体、
（ｉｉｉ）ラダー型構造体、例えば、下記一般式で表される構造体、
The substituent-containing silsesquioxane in the present invention may have any structure among these silsesquioxane compounds, or may be a mixture thereof. Specific structures of such silsesquioxane are, for example,
(I) In the silsesquioxane of the cage-type structure represented by the above formula (1), when m and a are 0, the cage-type structure represented by ( XR -SiO3 / 2 ) n ,
(Ii) a partially-cleaved structure of a cage-type structure represented by ( XR -SiO3 / 2 ) n (O1 / 2H) m when a is 0 in the above formula (1);
(Iii) a ladder-type structure, for example, a structure represented by the following general formula;
上記式中、Ａは上記式（１）におけるＸ−Ｒ−又はＢを表し、Ｂは上記式（１）におけるＲ′′を表す。ただし、少なくとも二つのＡはＸ−Ｒ−を表す。複数のＡ及びＢは、それぞれ、同一でも異なっていてもよい。平均重合度ｎは、保存安定性の観点から下限は好ましくは４であり、粘度の観点から上限は好ましくは１５である。；及び、
（ｉｖ）無定形構造体、例えば、上記Ａ及びＢで表される基を有する無定形構造体。ただし、少なくとも二つのＡはＸ−Ｒ−を表す。複数のＡ及びＢは、それぞれ、同一でも異なっていてもよい；
等が挙げられる。
In the above formula, A represents XR- or B in the formula (1), and B represents R "in the formula (1). However, at least two A represent XR-. A plurality of A and B may be the same or different, respectively. The lower limit of the average polymerization degree n is preferably 4 from the viewpoint of storage stability, and the upper limit is preferably 15 from the viewpoint of viscosity. ;as well as,
(Iv) An amorphous structure, for example, an amorphous structure having the groups represented by A and B above. However, at least two A represent XR-. A and B may each be the same or different;
And the like.
上記（ｉ）で表される籠型構造体のシルセスキオキサンにおけるｎの値は、６〜１８の偶数であり、好ましくは６〜１４、より好ましくは８、１０又は１２であり、さらに好ましくは、８である。具体例としては、例えば、ｎが６のものは三角柱型構造式を有し、ｎが８のものは６面体型構造式を有し、ｎが１０のものは５角柱型構造式を有し、ｎが１２のものは４角形４面と５角形４面とからなる８面体型構造式を有し、ｎが１４のものは４角形３面と５角形６面とからなる９面体型構造式を有することが知られている。 The value of n in the silsesquioxane of the cage-type structure represented by the above (i) is an even number of 6 to 18, preferably 6 to 14, more preferably 8, 10 or 12, and still more preferably. Is 8. As a specific example, for example, when n is 6 has a triangular prism structural formula, when n is 8 has a hexahedral structural formula, and when n is 10 has a pentagonal structural formula. , N is 12 has an octahedral structure consisting of 4 tetragons and 4 pentagons, and n is 14 is a 9-hedron structure consisting of 3 tetragons and 6 pentagons It is known to have a formula.
上記（ｉｉ）で表される籠型構造体の部分開裂構造体は、（ｉｉ−１）籠型構造からケイ素原子のうちの一部が欠けた構造又は（ｉｉ−２）籠型構造の一部のケイ素−酸素結合が切断された構造のものを表す。ｎの値は、４〜１８であり、好ましくは４〜１４である。籠型構造からケイ素原子のうちの一部が欠けた構造（ｉｉ−１）としては、例えば、ｎ＝６の完全縮合ケージ型構造の一つのケイ素原子が欠けた構造：（Ｘ−Ｒ−ＳｉＯ３／２）６−１（Ｏ１／２Ｈ）３、ｎ＝６の完全縮合ケージ型構造の二つのケイ素原子が欠けた構造：（Ｘ−Ｒ−ＳｉＯ３／２）６−２（Ｏ１／２Ｈ）４又は（Ｘ−Ｒ−ＳｉＯ３／２）６−２（Ｏ１／２Ｈ）６、ｎ＝８の完全縮合ケージ型構造の一つのケイ素原子が欠けた構造：（Ｘ−Ｒ−ＳｉＯ３／２）８−１（Ｏ１／２Ｈ）３、ｎ＝８の完全縮合ケージ型構造の二つのケイ素原子が欠けた構造：（Ｘ−Ｒ−ＳｉＯ３／２）８−２（Ｏ１／２Ｈ）４又は（Ｘ−Ｒ−ＳｉＯ３／２）８−２（Ｏ１／２Ｈ）６、ｎ＝１０の完全縮合ケージ型構造の一つのケイ素原子が欠けた構造：（Ｘ−Ｒ−ＳｉＯ３／２）１０−１（Ｏ１／２Ｈ）３、ｎ＝１０の完全縮合ケージ型構造の二つのケイ素原子が欠けた構造：（Ｘ−Ｒ−ＳｉＯ３／２）１０−２（Ｏ１／２Ｈ）４又は（Ｘ−Ｒ−ＳｉＯ３／２）１０−２（Ｏ１／２Ｈ）６、ｎ＝１０の完全縮合ケージ型構造の隣り合う三つのケイ素原子が欠けた構造：（Ｘ−Ｒ−ＳｉＯ３／２）１０−３（Ｏ１／２Ｈ）５、ｎ＝１２の完全縮合ケージ型構造の一つのケイ素原子が欠けた構造：（Ｘ−Ｒ−ＳｉＯ３／２）１２−１（Ｏ１／２Ｈ）３、ｎ＝１２の完全縮合ケージ型構造の二つのケイ素原子が欠けた構造：（Ｘ−Ｒ−ＳｉＯ３／２）１２−２（Ｏ１／２Ｈ）４又は（Ｘ−Ｒ−ＳｉＯ３／２）１２−２（Ｏ１／２Ｈ）６、ｎ＝１２の完全縮合ケージ型構造の隣り合う三つのケイ素原子が欠けた構造：（Ｘ−Ｒ−ＳｉＯ３／２）１２−３（Ｏ１／２Ｈ）５、ｎ＝１４の完全縮合ケージ型構造の一つのケイ素原子が欠けた構造：（Ｘ−Ｒ−ＳｉＯ３／２）１４−１（Ｏ１／２Ｈ）３、ｎ＝１４の完全縮合ケージ型構造の二つのケイ素原子が欠けた構造：（Ｘ−Ｒ−ＳｉＯ３／２）１４−２（Ｏ１／２Ｈ）４又は（Ｘ−Ｒ−ＳｉＯ３／２）１４−２（Ｏ１／２Ｈ）６、ｎ＝１４の完全縮合ケージ型構造の隣り合う三つのケイ素原子が欠けた構造：（Ｘ−Ｒ−ＳｉＯ３／２）１４−３（Ｏ１／２Ｈ）５、ｎ＝１４の完全縮合ケージ型構造の隣り合う四つのケイ素原子が欠けた構造：（Ｘ−Ｒ−ＳｉＯ３／２）１４−４（Ｏ１／２Ｈ）４又は（Ｘ−Ｒ−ＳｉＯ３／２）１４−４（Ｏ１／２Ｈ）６、等を挙げることができる。 The partially-cleaved structure of the cage-type structure represented by the above (ii) is a structure in which a part of silicon atoms is missing from the (ii-1) cage-type structure or (ii-2) a cage-type structure. In which the silicon-oxygen bond is broken. The value of n is 4-18, preferably 4-14. As the structure (ii-1) in which some of the silicon atoms are missing from the cage structure, for example, a structure in which one silicon atom in a complete condensation cage structure in which n = 6 is missing: (XR-SiO 3/2 ) 6-1 (O 1/2 H) 3 , a structure in which two silicon atoms are lacking in a complete condensation cage type structure in which n = 6: (X-R-SiO 3/2 ) 6-2 (O ( 1/2 H) 4 or ( XR -SiO 3/2 ) 6-2 (O 1/2 H) 6 , n = 8, a structure in which one silicon atom is missing in a complete condensation cage type structure: (X -R-SiO 3/2 ) 8-1 (O 1/2 H) 3 , n = 8 complete condensation cage type structure lacking two silicon atoms: (X-R-SiO 3/2 ) 8 -2 (O 1/2 H) 4 or ( XR -SiO 3/2 ) 8-2 (O 1/2 H) 6 , n = 10, complete condensation cage type structure One silicon atom lacking structure: ( XR -SiO 3/2 ) 10-1 (O 1/2 H) 3 , n = 10 Completely condensed cage type structure lacks two silicon atoms structure: (X-R-SiO 3/2 ) 10-2 (O 1/2 H) 4 or (X-R-SiO 3/2) 10-2 (O 1/2 H) of 6, n = 10 One of the completely condensed cage structures in which three adjacent silicon atoms are missing in the completely condensed cage structure: ( XR -SiO 3/2 ) 10-3 (O 1/2 H) 5 , n = 12 Structure lacking two silicon atoms: ( XR -SiO 3/2 ) 12-1 (O 1/2 H) 3 , structure in which two silicon atoms lacking in a complete condensation cage type structure of n = 12: ( X-R-SiO 3/2) 12-2 (O 1/2 H) 4 or (X-R-SiO 3/2) 12-2 (O 1 2 H) 6, n = 12 for full condensation cage type three silicon atoms chipped structure adjacent the structure: (X-R-SiO 3/2 ) 12-3 (O 1/2 H) 5, n = 14 complete condensed cage type structure in which one silicon atom is missing: ( XR -SiO 3/2 ) 14-1 (O 1/2 H) 3 , n = 14 fully condensed cage type structure One of the silicon atoms missing structure: (X-R-SiO 3/2 ) 14-2 (O 1/2 H) 4 or (X-R-SiO 3/2) 14-2 (O 1/2 H) 6 , a structure in which three silicon atoms adjacent to each other in the complete condensation cage type structure in which n = 14 is missing: ( XR -SiO 3/2 ) 14-3 (O 1/2 H) 5 , in which n = 14 four silicon atoms chipped structure adjacent fused cage structure: (X-R-SiO 3/2 ) 14-4 (O 1 / 2 H) 4 or (X-R-SiO 3/2) 14-4 (O 1/2 H) 6, and the like.
籠型構造の一部のケイ素−酸素結合が切断された構造（ｉｉ−２）としては、例えば、ｎ＝６の完全縮合ケージ型構造の一つのケイ素−酸素結合が切断された構造：（Ｘ−Ｒ−ＳｉＯ３／２）６（Ｏ１／２Ｈ）２、ｎ＝６の完全縮合ケージ型構造の二つのケイ素−酸素結合が切断された構造：（Ｘ−Ｒ−ＳｉＯ３／２）６（Ｏ１／２Ｈ）４、ｎ＝８の完全縮合ケージ型構造の一つのケイ素−酸素結合が切断された構造：（Ｘ−Ｒ−ＳｉＯ３／２）８（Ｏ１／２Ｈ）２、ｎ＝８の完全縮合ケージ型構造の二つのケイ素−酸素結合が切断された構造：（Ｘ−Ｒ−ＳｉＯ３／２）８（Ｏ１／２Ｈ）４、ｎ＝１０の完全縮合ケージ型構造の一つのケイ素−酸素結合が切断された構造：（Ｘ−Ｒ−ＳｉＯ３／２）１０（Ｏ１／２Ｈ）２、ｎ＝１０の完全縮合ケージ型構造の二つのケイ素−酸素結合が切断された構造：（Ｘ−Ｒ−ＳｉＯ３／２）１０（Ｏ１／２Ｈ）４、ｎ＝１０の完全縮合ケージ型構造の三つのケイ素−酸素結合が切断された構造：（Ｘ−Ｒ−ＳｉＯ３／２）１０（Ｏ１／２Ｈ）６、ｎ＝１２の完全縮合ケージ型構造の一つのケイ素−酸素結合が切断された構造：（Ｘ−Ｒ−ＳｉＯ３／２）１２（Ｏ１／２Ｈ）２、ｎ＝１２の完全縮合ケージ型構造の二つのケイ素−酸素結合が切断された構造：（Ｘ−Ｒ−ＳｉＯ３／２）１２（Ｏ１／２Ｈ）４、ｎ＝１２の完全縮合ケージ型構造の三つの一つのケイ素−酸素結合が切断された構造：（Ｘ−Ｒ−ＳｉＯ３／２）１２（Ｏ１／２Ｈ）６、ｎ＝１４の完全縮合ケージ型構造の一つのケイ素−酸素結合が切断された構造：（Ｘ−Ｒ−ＳｉＯ３／２）１４（Ｏ１／２Ｈ）２、ｎ＝１４の完全縮合ケージ型構造の二つのケイ素−酸素結合が切断された構造：（Ｘ−Ｒ−ＳｉＯ３／２）１４（Ｏ１／２Ｈ）４、ｎ＝１４の完全縮合ケージ型構造の三つのケイ素−酸素結合が切断された構造：（Ｘ−Ｒ−ＳｉＯ３／２）１４（Ｏ１／２Ｈ）６、等を挙げることができる。 Examples of the structure (ii-2) in which a part of the cage-type structure in which silicon-oxygen bonds are cleaved include, for example, a structure in which one silicon-oxygen bond in n = 6 complete condensation cage type structure is cleaved: (X —R—SiO 3/2 ) 6 (O 1/2 H) 2 , n = 6, a structure in which two silicon-oxygen bonds of a complete condensation cage type structure are cleaved: ( XR —SiO 3/2 ) 6 (O 1/2 H) 4 , n = 8, a structure in which one silicon-oxygen bond is cleaved in a complete condensation cage type structure: ( XR -SiO 3/2 ) 8 (O 1/2 H) 2 , a structure in which two silicon-oxygen bonds of a complete condensation cage structure of n = 8 are cleaved: ( XR -SiO 3/2 ) 8 (O 1/2 H) 4 , a complete condensation of n = 10 Structure in which one silicon-oxygen bond in the cage type structure has been cut: ( XR -SiO 3/2 ) 10 (O 1 / 2 H) 2, n = 10 two silicon fully condensed cage structure of - oxygen bond is cleaved structure: (X-R-SiO 3/2 ) 10 (O 1/2 H) 4, n = 10 Of the completely condensed cage type structure of ( XR -SiO 3/2 ) 10 (O 1/2 H) 6 , where n = 12 A structure in which two silicon-oxygen bonds are broken: two silicon-oxygen bonds in a complete condensation cage type structure of ( XR -SiO3 / 2 ) 12 (O1 / 2H) 2 , n = 12 are broken. Structure: ( XR —SiO 3/2 ) 12 (O 1/2 H) 4 , n = 12, in which three single silicon-oxygen bonds of the complete condensation cage type structure are cut: (X- R-SiO 3/2 ) 12 (O 1/2 H) 6 , n = 14 having a completely condensed cage structure Structure in which one silicon-oxygen bond is broken: Two silicon-oxygen bonds in a complete condensation cage type structure of ( XR -SiO3 / 2 ) 14 (O1 / 2H) 2 , n = 14 are broken. Structure: ( XR —SiO 3/2 ) 14 (O 1/2 H) 4 , n = 14, a structure in which three silicon-oxygen bonds of a complete condensation cage type structure are cut: (XR —SiO 3/2 ) 14 (O 1/2 H) 6 , and the like.
また、式（１）においいてｍ及びａが０でない場合に該当する、上記（ｉｉ）における部分開裂構造体のＳｉ原子に直結する水酸基の一部又は全部が−Ｏ−又は−Ｏ−Ｓｉ−構造を含有する置換基で置換された部分開裂構造体であってもよい。 Further, when m and a are not 0 in the formula (1), a part or all of the hydroxyl group directly connected to the Si atom of the partially cleaved structure in the above (ii) is -O- or -O-Si-. It may be a partially-cleaved structure substituted with a substituent having a structure.
本発明において、置換基含有シルセスキオキサンは、官能基を少なくとも２つ、好ましくは少なくとも４つ、より好ましくは少なくとも６つ、有する。ここにいう官能基は、シルセスキオキサンの架橋物を形成するために必要な官能基であって、適切な架橋剤との組み合わせにより、又は、自己縮合的若しくは自己付加的に、架橋物を形成することができる、架橋点となり得る官能基をいう。なお、架橋物とは、架橋剤分子により架橋されたもの、及び、架橋剤を使用することなしに自己縮合的又は自己付加的にシルセスキオキサン同士が相互に結合した硬化物をいう。ただし、上記官能基としては、本発明においては、オキセタニル基、カルボニル基（ただし、エステルに含まれるＣ＝Ｏは含まない）、窒素、イオウ等を含有する置換基以外の特定の種類の官能基を有する。具体的には、脂肪族不飽和結合基、エポキシ環、及び、Ｓｉ−Ｈ結合を有する置換されていてもよいシリル基からなる群から選択された少なくとも１種の官能基を少なくとも２つ有する。なお、本発明のシルセスキオキサンは置換基を含有している。ここにいう置換基とは、Ｓｉ原子に水素原子に代替して結合する基であり、本発明のシルセスキオキサンはこのような置換基を含有するものである。上記置換基には、上記官能基のうち脂肪族不飽和結合基、エポキシ環、及び、Ｓｉ−Ｈ結合を有する置換シリル基がふくまれる。しかし、上記官能基がＳｉ−Ｈ結合を有する置換されていないシリル基である場合は、本発明のシルセスキオキサンは少なくとも一つの置換基をＳｉ原子上に有する。この置換基は、例えば、脂肪族不飽和結合基、Ｓｉ−Ｈ結合を有する置換シリル基若しくはエポキシ基であってもよく（この場合は複数種類の官能基を有することになる）、又は、後述する脂肪族不飽和結合を有していない炭素数１〜２０の炭化水素基等であってもよい（この場合は官能基と官能基以外の置換基を有することになる）。上記官能基としては、好ましくは、上記式（１）におけるＸ−Ｒ−において、複数のＲは、同一又は異なって、直接結合、ハロゲン置換基を有していてもよい炭素数１〜２０のアルキレン基、炭素数５〜１２のシクロアルキレン基、エーテル結合を含有する炭素数１〜２０の２価の炭化水素基、エステル結合を含有する炭素数１〜２０の２価の炭化水素基、及び、置換基を有していてもよいオルガノシロキシ基を含有する炭素数１〜１２の２価の炭化水素基からなる群から選択された少なくとも１種である。複数のＸは、同一又は異なって、エポキシ基、３，４−エポキシシクロヘキシル基、ビニル基、及び、Ｒとともにヒドロシリル基を構成していてもよい水素原子からなる群から選択される少なくとも１種である。上記ＸとＲとは上述の基のいずれの組み合わせであってもよい。 In the present invention, the substituent-containing silsesquioxane has at least two, preferably at least four, and more preferably at least six functional groups. The functional group referred to here is a functional group necessary for forming a crosslinked product of silsesquioxane, and the crosslinked product is combined with an appropriate crosslinking agent or self-condensed or self-added. It refers to a functional group that can be formed and can be a crosslinking point. The crosslinked product refers to a product crosslinked by a crosslinking agent molecule and a cured product in which silsesquioxanes are mutually bonded to each other in a self-condensing or self-adding manner without using a crosslinking agent. However, in the present invention, as the functional group, a specific type of functional group other than an oxetanyl group, a carbonyl group (however, C ＝ O contained in the ester is not included), a substituent containing nitrogen, sulfur or the like is used. Having. Specifically, it has at least two functional groups selected from the group consisting of an aliphatic unsaturated bond group, an epoxy ring, and an optionally substituted silyl group having a Si—H bond. The silsesquioxane of the present invention contains a substituent. The term “substituent” as used herein refers to a group that is bonded to a Si atom instead of a hydrogen atom, and the silsesquioxane of the present invention contains such a substituent. The substituent includes an aliphatic unsaturated bond group, an epoxy ring, and a substituted silyl group having a Si—H bond among the functional groups. However, when the functional group is an unsubstituted silyl group having a Si-H bond, the silsesquioxane of the present invention has at least one substituent on a Si atom. This substituent may be, for example, an aliphatic unsaturated bond group, a substituted silyl group having a Si—H bond, or an epoxy group (in this case, it will have a plurality of types of functional groups), or Or a hydrocarbon group having 1 to 20 carbon atoms having no aliphatic unsaturated bond (in this case, it has a functional group and a substituent other than the functional group). As the functional group, preferably, in X—R— in the above formula (1), a plurality of Rs are the same or different and each have a direct bond or a C 1 to C 20 which may have a halogen substituent. An alkylene group, a cycloalkylene group having 5 to 12 carbon atoms, a divalent hydrocarbon group having 1 to 20 carbon atoms containing an ether bond, a divalent hydrocarbon group having 1 to 20 carbon atoms containing an ester bond, and And at least one selected from the group consisting of a divalent hydrocarbon group having 1 to 12 carbon atoms containing an organosiloxy group which may have a substituent. A plurality of Xs are the same or different and are at least one selected from the group consisting of an epoxy group, a 3,4-epoxycyclohexyl group, a vinyl group, and a hydrogen atom which may form a hydrosilyl group together with R. is there. X and R may be any combination of the groups described above.
また、本発明において置換基含有シルセスキオキサンは、その水酸基の一部又はすべてが置換基Ｒ′で置換された構造であってもよく、その置換基Ｒ′は、−Ｏ−Ｒ′′又は−Ｏ−Ｓｉ（Ｒ′′）３（Ｒ′′は水素原子であってもよい置換基。ただし、Ｒ′′が複数あるときは同一でも異なっていてもよい。）を表す。ただし、Ｒ′が複数あるときは同一でも異なっていてもよい。 Further, in the present invention, the substituent-containing silsesquioxane may have a structure in which a part or all of the hydroxyl groups are substituted with a substituent R ′, and the substituent R ′ is —O—R ″. Or —O—Si (R ″) 3 (R ″ is a substituent which may be a hydrogen atom. However, when there are a plurality of R ″ s, they may be the same or different.) However, when there are a plurality of R's, they may be the same or different.
本発明において、置換基含有シルセスキオキサンは、複数のＸ及びＲ′′のうち少なくとも二つは架橋点を形成し得るものである。 In the present invention, the substituent-containing silsesquioxane is such that at least two of X and R ″ can form a crosslinking point.
上記ハロゲンとしては、例えば、塩素、フッ素等を挙げることができる。 Examples of the halogen include chlorine and fluorine.
炭素数１〜２０のアルキレン基としては特に限定されず、例えば、メチレン、エチレン、トリメチレン、テトラメチレン等が挙げられる。 The alkylene group having 1 to 20 carbon atoms is not particularly limited, and includes, for example, methylene, ethylene, trimethylene, tetramethylene and the like.
炭素数５〜１２のシクロアルキレン基としては、例えば、シクロペンチレン、シクロヘキシレン、ノルボルニレン、トリシクロドデシレン等が挙げられる。 Examples of the cycloalkylene group having 5 to 12 carbon atoms include cyclopentylene, cyclohexylene, norbornylene, tricyclododecylene, and the like.
エステル結合を含有する炭素数１〜２０の２価の炭化水素基としては、例えば、−（Ｃ＝Ｏ）−Ｏ−ＣＨ２−、−（Ｃ＝Ｏ）−Ｏ−（ＣＨ２）２−、−ＣＨ２−（Ｃ＝Ｏ）−、−（ＣＨ２）２−（Ｃ＝Ｏ）−Ｏ−、−（ＣＨ２）２−（Ｃ＝Ｏ）−Ｏ−（ＣＨ２）２−等が挙げられる。 Examples of the divalent hydrocarbon group having 1 to 20 carbon atoms containing an ester bond, for example, - (C = O) -O -CH 2 -, - (C = O) -O- (CH 2) 2 - , -CH 2 - (C = O ) -, - (CH 2) 2 - (C = O) -O -, - (CH 2) 2 - (C = O) -O- (CH 2) 2 - , etc. Is mentioned.
置換基を有していてもよいオルガノシロキシ基を含有する炭素数１〜１２の２価の炭化水素基としては、例えば、メチレン、エチレン、トリメチレン、テトラメチレン等に置換基を有していてもよいオルガノシロキシ基が結合した基等があげられる。 Examples of the divalent hydrocarbon group having 1 to 12 carbon atoms containing an organosiloxy group which may have a substituent include, for example, methylene, ethylene, trimethylene, tetramethylene, etc. And a group to which a good organosiloxy group is bonded.
Ｒ′′は、水素原子又はメチル、エチル、シクロヘキシル、フェネチル等の置換基である。 R ″ is a hydrogen atom or a substituent such as methyl, ethyl, cyclohexyl, phenethyl and the like.
以下Ｘ−Ｒ−の具体例を示す。
（１）エポキシ環を含有し、エーテル結合を有していてもよい炭素数１〜１０の炭化水素基、例えば、下記の（２）〜（１０）で表される基等が挙げられる。
Hereinafter, specific examples of XR- will be shown.
(1) A hydrocarbon group containing an epoxy ring and having 1 to 10 carbon atoms which may have an ether bond, for example, groups represented by the following (2) to (10) and the like.
（２）炭素−炭素不飽和結合を含有する炭素数１〜１２の炭化水素基、例えば、ビニル基、アリル基、３−ブテニル基、３−シクロヘキセニル基、５−（ビシクロヘプテニル基、シクロペンテニル基、ＣＨ２＝ＣＨ−（ＣＨ２）８−等を挙げることができる。 (2) C1-C12 hydrocarbon groups containing carbon-carbon unsaturated bonds, for example, vinyl, allyl, 3-butenyl, 3-cyclohexenyl, 5- (bicycloheptenyl, cyclo Pentenyl group, CH 2 ＣＨCH— (CH 2 ) 8 — and the like.
（３）脂肪族不飽和結合を有するシリルオキシ基、例えば、ジメチルビニルシリルオキシ基、アリルジメチルシリルオキシ基、ＣＨ２＝ＣＨ−（ＣＨ２）８−Ｓｉ（Ｍｅ）２−Ｏ−等が挙げられる。 (3) A silyloxy group having an aliphatic unsaturated bond, for example, a dimethylvinylsilyloxy group, an allyldimethylsilyloxy group, CH 2 ＣＨCH— (CH 2 ) 8 —Si (Me) 2 —O— and the like. .
（４）エポキシ環を含有するシリルオキシ基、例えば、下記（１１）〜（１９）で表される基等が挙げられる。 (4) An epoxy ring-containing silyloxy group, for example, groups represented by the following (11) to (19).
（５）水素、Ｈ−Ｓｉ（Ｍｅ）２−Ｏ−で表される基等。
ただし、上記において式中のＭｅはメチル基を表す。
(5) Hydrogen, a group represented by H—Si (Me) 2 —O—, and the like.
However, in the above, Me in the formula represents a methyl group.
本発明において、置換基含有シルセスキオキサンは、上記反応性置換基以外に、脂肪族不飽和結合を有していない炭素数１〜２０の炭化水素基を有していてもよい。このような炭化水素基としては特に限定されず、例えば、メチル基、イソブチル基、オクチル基、フェニル基、フェネチル基、シクロヘキシル基、シクロペンチル基、アダマンチル基、アダマンチルエチル基等を挙げることができる。 In the present invention, in addition to the reactive substituent, the substituent-containing silsesquioxane may have a hydrocarbon group having 1 to 20 carbon atoms and having no aliphatic unsaturated bond. Such a hydrocarbon group is not particularly limited, and examples thereof include a methyl group, an isobutyl group, an octyl group, a phenyl group, a phenethyl group, a cyclohexyl group, a cyclopentyl group, an adamantyl group, and an adamantylethyl group.
上記籠型シルセスキオキサンの合成法としては、籠型シルセスキオキサンの骨格構造（すなわち、籠型シルセスキオキサン構造及びその部分開裂構造体構造）を合成したものに置換基を導入する方法、又は、置換基を有する３官能有機ケイ素モノマーの加水分解による方法、等が知られているが、そのいずれの方法を用いてもよい。籠型シルセスキオキサン類の骨格構造は、各種の方法で合成でき、例えば、Ｃｈｅｍ．Ｒｅｖ．１９９５，９５，１４３１やＪ．Ａｍ．Ｃｈｅｍ．Ｓｏｃ．１９８９，１１１，１７４１あるいはＯｒｇａｎｏｍｅｔａｌｌｉｃｓ１９９１，１０，２５２６等の方法で合成することができることが報告されている。また、例えば、６面体の各頂点がケイ素で各辺が酸素でできたオクタキス（ヒドリドシルセスキオキサン）にヒドロシリル化反応を利用して頂点のケイ素上にアルキル基を導入することができることが知られている（例えば、特許第３０２０１６４号公報参照）。 As a method for synthesizing the cage-type silsesquioxane, a substituent is introduced into a compound obtained by synthesizing the skeleton structure of the cage-type silsesquioxane (that is, the cage-type silsesquioxane structure and its partially-cleaved structure structure). A method or a method by hydrolysis of a trifunctional organosilicon monomer having a substituent is known, and any of these methods may be used. The skeleton structure of the cage silsesquioxane can be synthesized by various methods, for example, as described in Chem. Rev .. 1995, 95, 1431; Am. Chem. Soc. 1989, 111, 1741 or Organometallics 1991, 10, 2526, and the like. Further, for example, it is known that an alkyl group can be introduced on silicon at an apex of a hexahedron by using a hydrosilylation reaction on octakis (hydridosilsesquioxane) made of silicon at each apex and oxygen at each side thereof. (See, for example, Japanese Patent No. 3201264).
また、籠状シルセスキオキサンの部分開裂構造体の合成法としては、完全縮合型の籠型シルセスキオキサン類を製造する際に同時に生成することが報告されている。また、完全縮合型シルセスキオキサンをトリフルオロメタンスルフォン酸やテトラエチルアンモニウムヒドロキサイドによって部分切断することでも合成できることが知られている。 In addition, as a method for synthesizing a partially cleaved structure of cage silsesquioxane, it is reported that the silsesquioxane is produced simultaneously with the production of a complete condensation cage silsesquioxane. It is also known that the synthesis can be performed by partially cleaving the completely condensed silsesquioxane with trifluoromethanesulfonic acid or tetraethylammonium hydroxide.
一方、置換基を有する３官能有機ケイ素モノマーの加水分解による方法は、例えば、置換基Ｘ−Ｒ−を有するＸ−Ｒ−ＳｉＺ３（Ｚはハロゲン原子又はアルコキシ基）を原料として、上記の籠状シルセスキオキサン及びその部分開裂構造体と同様の合成法により合成することができる。 On the other hand, a method of hydrolyzing a trifunctional organosilicon monomer having a substituent is described, for example, by using XR-SiZ 3 (Z is a halogen atom or an alkoxy group) having a substituent XR- as a raw material. Can be synthesized by the same synthetic method as that for the silsesquioxane and its partially cleaved structure.
また、置換基を有する籠型シルセスキオキサンが市場にて入手可能であるものもあり、例えば、ＰＯＳＳ（登録商標）シリーズのシルセスキオキサン（ハイブリッドプラスチックス社製）等を使用してもよい。 Some cage-type silsesquioxanes having a substituent are commercially available. For example, POSS (registered trademark) series silsesquioxane (manufactured by Hybrid Plastics Co., Ltd.) may be used. Good.
ラダー構造体の製造方法としてはとくに限定されず、例えば、本明細書の実施例に記載の方法、又は、特開平６−３０６１７３号公報に記載の方法等により製造することができる。すなわち、トリアルコキシシラン又はトリクロロシランを共加水分解縮合して製造する方法等が知られており、これを利用することができ、架橋性反応基含有トリアルコキシシラン又はトリクロロシランを用いて官能基を導入することができる。また、架橋性反応基を形成しうる架橋性反応基前駆体を有するポリオルガノシロキサンをまず製造し、このポリオルガノシロキサンの架橋性反応基前駆体を高分子反応により架橋性反応基とすることで製造することもできる。反応温度としては、例えば、２０〜１００℃であり、反応時間は１〜２４時間である。ラダー構造の規則性を高めるために、最初の加水分解反応を２０〜６０℃の比較的低温で０．５〜１時間おこなってから、引き続き昇温して７０〜９０℃で１〜２３時間反応させることが好ましい。この条件でない場合は、無定形物の出現が増加する。また、本明細書の実施例に記載の方法においては、有機ケイ素モノマーの加水分解を行うｐＨと縮合反応を行うｐＨとを調節することにより、ラダー型シルセスキオキサンの重合度を調節することができる。 The method for producing the ladder structure is not particularly limited, and for example, the ladder structure can be produced by the method described in Examples of the present specification or the method described in JP-A-6-306173. That is, a method of producing a trialkoxysilane or trichlorosilane by co-hydrolysis-condensation is known, and this method can be used, and a functional group is synthesized using a crosslinkable reactive group-containing trialkoxysilane or trichlorosilane. Can be introduced. Further, a polyorganosiloxane having a crosslinkable reactive group precursor capable of forming a crosslinkable reactive group is first produced, and the crosslinkable reactive group precursor of the polyorganosiloxane is converted into a crosslinkable reactive group by a polymer reaction. It can also be manufactured. The reaction temperature is, for example, 20 to 100 ° C., and the reaction time is 1 to 24 hours. In order to increase the regularity of the ladder structure, the first hydrolysis reaction is performed at a relatively low temperature of 20 to 60 ° C for 0.5 to 1 hour, and then the temperature is raised to 70 to 90 ° C for 1 to 23 hours. Preferably. Otherwise, the appearance of amorphous objects will increase. Further, in the method described in the examples of the present specification, by adjusting the pH at which the organic silicon monomer is hydrolyzed and the pH at which the condensation reaction is performed, the degree of polymerization of the ladder-type silsesquioxane is adjusted. Can be.
本発明において、置換基含有シルセスキオキサンは、架橋物を形成して硬化するのであるが、この硬化は、シルセスキオキサンの自己縮合反応又は自己付加反応によるものであってもよい。このような反応は、相互に反応可能な置換基同士の組み合わせによって可能となり、例えば、ビニル基とＳｉ原子に直結した水素原子とのヒドロシリル化反応、籠型構造体シルセスキオキサンの部分開裂体におけるシラノール基同士の加水分解・縮合、エポキシ環を含有する炭化水素基とシラノール基との反応等がその典型例である。このような反応が自己触媒的に進行する場合は、特に触媒を加えなくても反応が進行するので、貯蔵安定性を増すためには、低温保管が好ましい。また、逆に、加温や促進剤添加等により硬化反応を促進することが、例えば、エポキシ環とシラノール基との反応のためには好ましい。この場合には、アニオン重合触媒として弱酸（ＣＨ３ＣＯＯＨ、Ｓｉ−ＯＨ等）のアルカリ金属（例えば、Ｋ、Ｎａ、Ｌｉ等。Ｋが最も好ましく、つぎにＮａが好ましく、そのつぎにＬｉが好ましい。）塩を使用することが好ましい。さらに、エポキシ環のカチオン重合が、カチオン重合触媒（ルイス酸触媒、例えば、ハロゲン化金属（ＢＦ３、ＡｌＣｌ３等）、有機金属化合物（Ｃ２Ｈ５ＡｌＣｌ２等）等）の使用により行うことができる。 In the present invention, the substituent-containing silsesquioxane forms a crosslinked product and cures. This curing may be caused by a self-condensation reaction or a self-addition reaction of the silsesquioxane. Such a reaction is enabled by a combination of mutually reactive substituents, for example, a hydrosilylation reaction between a vinyl group and a hydrogen atom directly bonded to a Si atom, a partially-cleaved cage-type structure silsesquioxane. Typical examples thereof include hydrolysis / condensation between silanol groups in the above, reaction between a hydrocarbon group containing an epoxy ring and a silanol group, and the like. When such a reaction proceeds autocatalytically, the reaction proceeds without adding a catalyst, and therefore, low-temperature storage is preferable in order to increase storage stability. Conversely, it is preferable to accelerate the curing reaction by heating or adding an accelerator, for example, for the reaction between an epoxy ring and a silanol group. In this case, as an anion polymerization catalyst, an alkali metal (for example, K, Na, Li, etc.) of a weak acid (CH 3 COOH, Si—OH, etc.) is most preferably K, then Na is preferable, and then Li is preferable. )) It is preferred to use salts. Further, the cationic polymerization of the epoxy ring is carried out by using a cationic polymerization catalyst (Lewis acid catalyst, for example, a metal halide (BF 3 , AlCl 3, etc.), an organometallic compound (C 2 H 5 AlCl 2, etc.)). Can be.
本発明においては、置換基含有シルセスキオキサンの架橋物を形成するために、硬化剤を使用してもよい。このような硬化剤としては、熱硬化性樹脂の硬化に使用される硬化系を使用することができ、エポキシ基と酸無水物との組み合わせを好適に使用することができる。 In the present invention, a curing agent may be used to form a crosslinked product of the substituted silsesquioxane. As such a curing agent, a curing system used for curing a thermosetting resin can be used, and a combination of an epoxy group and an acid anhydride can be suitably used.
このような硬化剤としては、例えば、メチルヘキサヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、ノルボルナン−２，３−ジカルボン酸無水物、メチルノルボルナン−２，３−ジカルボン酸無水物等を挙げることができる。硬化剤の配合量は、エポキシ基１モルに対して０．４〜１モルが好ましく、より好ましくは０．５〜０．７モルである。 Examples of such a curing agent include methylhexahydrophthalic anhydride, hexahydrophthalic anhydride, norbornane-2,3-dicarboxylic anhydride, methylnorbornane-2,3-dicarboxylic anhydride and the like. . The compounding amount of the curing agent is preferably from 0.4 to 1 mol, more preferably from 0.5 to 0.7 mol, per 1 mol of the epoxy group.
本発明においては、置換基含有シルセスキオキサンの架橋物を形成するために、硬化剤とともに硬化触媒を使用してもよい。このような硬化触媒としては、４級ホスホニウム塩、例えば、テトラフェニルホスホニウムブロミド、テトラブチルホスホニウムブロミド、メチルトリフェニルホスホニウムブロミド、エチルトリフェニルホスホニウムブロミド、ｎ−ブチルトリフェニルホスホニウムブロミド、等が挙げられる。これらのうち、テトラフェニルホスホニウムブロミドが好ましい。 In the present invention, a curing catalyst may be used together with a curing agent to form a crosslinked product of the substituted silsesquioxane. Examples of such a curing catalyst include quaternary phosphonium salts such as tetraphenylphosphonium bromide, tetrabutylphosphonium bromide, methyltriphenylphosphonium bromide, ethyltriphenylphosphonium bromide, and n-butyltriphenylphosphonium bromide. Of these, tetraphenylphosphonium bromide is preferred.
このような硬化触媒の配合量は、組成物中、０．０５〜１ｐｈｒが好ましく、より好ましくは０．０８〜０．５ｐｈｒである。 The compounding amount of such a curing catalyst is preferably 0.05 to 1 phr, more preferably 0.08 to 0.5 phr in the composition.
本発明の封止材には、本発明の目的を阻害しないかぎり、その他の添加剤を使用することができる。このような添加剤としては、シランカップリング剤、ヒンダードアミン系光安定化剤、ヒンダードフェノール系酸化防止剤等が挙げられる。シランカップリングとしては、例えば、γ−グリシドキシプロピルトリメトキシシラン、γ−グリシドキシプロピルトリエトキシシラン、β−（３，４−エポキシシクロヘキシル）エチルトリメトキシシラン、β−（３，４−エポキシシクロヘキシル）エチルトリエトキシシラン、ビルニトリメトキシシラン、ビルニトリエトキシシラン等が挙げられる。ヒンダードアミン系光安定化剤としては、例えば、ＴＩＮＵＶＩＮ（登録商標）７７０、ＴＩＮＵＶＩＮ（登録商標）６２２ＬＤ（いずれもチバスペシャルティーケミカルズ社製）、アデカスタブ（登録商標）ＬＡ−５７（旭電化工業社製）等が挙げられる。ヒンダードフェノール系酸化防止剤としては、例えば、ＩＲＧＡＮＯＸ（登録商標）１０１０（チバスペシャルテーケミカルズ社製）、ノクラックＮＳ−３０（商品名）（大内新興化学工業社製）、トミノックスＴＴ（商品名）（吉豊ファインケミカル社製）等が挙げられる。
ただし、溶剤は使用しないことが好ましい。
Other additives can be used in the sealing material of the present invention as long as the object of the present invention is not impaired. Examples of such additives include a silane coupling agent, a hindered amine light stabilizer, and a hindered phenol antioxidant. Examples of the silane coupling include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, and β- (3,4- (Epoxycyclohexyl) ethyltriethoxysilane, virunitrimethoxysilane, virunitriethoxysilane, and the like. Examples of the hindered amine light stabilizer include TINUVIN (registered trademark) 770, TINUVIN (registered trademark) 622LD (all manufactured by Ciba Specialty Chemicals), and ADK STAB (registered trademark) LA-57 (manufactured by Asahi Denka Kogyo). And the like. Examples of the hindered phenolic antioxidant include IRGANOX (registered trademark) 1010 (manufactured by Ciba Specialty Chemicals), Nocrack NS-30 (trade name) (manufactured by Ouchi Shinko Chemical Co., Ltd.), and Tominox TT (trademark) Name) (manufactured by Yoshitoyo Fine Chemical Co., Ltd.).
However, it is preferable not to use a solvent.
上記シランカップリング剤の配合量は、組成物中、０．１〜５ｐｈｒが好ましく、より好ましくは０．５〜２ｐｈｒである。
上記ヒンダードアミン系光安定化剤の配合量は、組成物中、０．０１〜０．５ｐｈｒが好ましく、より好ましくは０．１〜０．３ｐｈｒである。
上記ヒンダードフェノール系酸化防止剤の配合量は、組成物中、０．０１〜０．５ｐｈｒが好ましく、より好ましくは０．１〜０．３ｐｈｒである。
The amount of the silane coupling agent is preferably 0.1 to 5 phr, more preferably 0.5 to 2 phr in the composition.
The amount of the hindered amine light stabilizer is preferably 0.01 to 0.5 phr, more preferably 0.1 to 0.3 phr in the composition.
The amount of the hindered phenol-based antioxidant is preferably 0.01 to 0.5 phr, more preferably 0.1 to 0.3 phr, in the composition.
本発明の封止材は、特定の官能基を含有し、オキセタニル基、カルボニル基（ただし、エステルに含まれるＣ＝Ｏは含まない）、窒素、イオウ等を含有する置換基を含有しないので、近紫外領域で透明であるのみならず、近紫外線を浴びても黄変することがない。また、Ｔｇを好ましくは８０℃以上、より好ましくは１００℃以上に達成することができる。従って、従来のエポキシ樹脂系封止剤の欠点を克服した紫外光素子用の封止材として極めて好適に使用することができる。また、架橋性官能基がＳｉ−Ｈ基であっても、置換基を含有するシルセスキオキサンであるので、接着性、耐湿性、耐熱衝撃性等に優れ、封止材として好適に使用することができる。 Since the encapsulant of the present invention contains a specific functional group and does not contain a substituent containing an oxetanyl group, a carbonyl group (however, C ＝ O contained in the ester is not included), nitrogen, sulfur and the like, Not only is it transparent in the near ultraviolet region, but it does not yellow even when exposed to near ultraviolet light. Moreover, Tg can be preferably attained at 80 ° C. or higher, more preferably at 100 ° C. or higher. Therefore, it can be used very suitably as a sealing material for an ultraviolet light element which overcomes the disadvantages of the conventional epoxy resin-based sealing agent. Further, even if the crosslinkable functional group is a Si-H group, since it is a silsesquioxane containing a substituent, it is excellent in adhesion, moisture resistance, thermal shock resistance, etc., and is suitably used as a sealing material. be able to.
紫外光素子にはＬＥＤやＬＤ等がある。例えば、近紫外ＬＥＤの構造は、一般に、金属ステムの上に電極配線サブマウントが設置され、その上にＬＥＤチップがマウントされる。このサブマウント上のチップを封止材で封止することにより近紫外ＬＥＤ素子が形成される。この封止材として本発明の封止材を使用することができる。また、白色発光ＬＥＤとするためにＬＥＤチップ上に蛍光体層が配置されていてもよい。この場合に、一般には、熱硬化性樹脂に蛍光体を含有させたもので蛍光体層が形成される。この蛍光体層の形成を、熱硬化性樹脂として本発明の封止材を使用してチップを封止することにより行うことができる。一般には、このうえにさらに封止材が適用されて白色発光ＬＥＤが形成される。さらに、同様にして、本発明の封止材を使用して高耐久性の高輝度青色発光ＬＥＤを形成することができる。本発明の素子は、上述の例示の態様が示すように、本発明の封止材が使用されてなる近紫外光素子である。 Examples of the ultraviolet light element include an LED and an LD. For example, in the structure of a near-ultraviolet LED, generally, an electrode wiring submount is provided on a metal stem, and an LED chip is mounted thereon. By sealing the chip on the submount with a sealing material, a near-ultraviolet LED element is formed. The sealing material of the present invention can be used as the sealing material. Further, a phosphor layer may be arranged on the LED chip to obtain a white light emitting LED. In this case, generally, a phosphor layer is formed of a thermosetting resin containing a phosphor. This phosphor layer can be formed by sealing the chip using the sealing material of the present invention as a thermosetting resin. Generally, a sealing material is further applied thereon to form a white light emitting LED. Further, similarly, a highly durable high-luminance blue light-emitting LED can be formed using the sealing material of the present invention. The element of the present invention is a near-ultraviolet light element using the sealing material of the present invention as shown in the above-described exemplary embodiment.
以下に実施例を示して、本発明をさらに詳細に説明するが、本発明はこれらに限定されるものではない。 Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited thereto.
製造例１
置換基を有する籠型シルセスキオキサンの合成
撹拌機及び温度計を設置した反応容器に、イソフロパノール１５０ｇ、水酸化テトラメチルアンモニウムの１０％水溶液５．４ｇ（水２７０ｍｍｏｌ、水酸化テトラメチルアンモニウム５．９３ｍｍｏｌ）、水１２ｇを仕込んだ後、γ−グリシドキシプロピルトリメトキシシラン４２．５ｇ（１８０ｍｍｏｌ）を徐々に加え、室温で２０時間撹拌放置した。
Production Example 1
Synthesis of cage-type silsesquioxane having substituents In a reaction vessel equipped with a stirrer and a thermometer, 150 g of isofopanol and 5.4 g of a 10% aqueous solution of tetramethylammonium hydroxide (270 mmol of water, tetramethylammonium hydroxide 5. After charging 93 g of water and 12 g of water, 42.5 g (180 mmol) of γ-glycidoxypropyltrimethoxysilane was gradually added thereto, and the mixture was stirred at room temperature for 20 hours.
反応終了後、系内にトルエン２００ｇを加え、減圧してイソフロパノールを除去し、分液ロートを用いて反応溶液を蒸留水により水洗した。分液ロートの水層が中性になるまで水洗を繰り返した後、有機層を分取し、無水硫酸ナトリウムで脱水した後、減圧下でトルエンを留去して目的の化合物（ＳＱ−１）を得た。エポキシ当量１７５ｇ／ｅｑであった。 After the completion of the reaction, 200 g of toluene was added to the system, isotropanol was removed under reduced pressure, and the reaction solution was washed with distilled water using a separating funnel. After repeatedly washing with water until the aqueous layer of the separating funnel becomes neutral, the organic layer is separated, dehydrated with anhydrous sodium sulfate, and then toluene is distilled off under reduced pressure to obtain the desired compound (SQ-1). Got. The epoxy equivalent was 175 g / eq.
製造例２
置換基を有するラダー型シルセスキオキサンの合成
攪拌機及び温度計を設置した反応容器に、γ−グリシドキシプロピルトリメトキシシラン９４．４ｇ（０．３８ｍｏｌ）、及び、０．９％塩酸水溶液を１４．６ｇ（水０．８０ｍｏｌ）仕込み、室温で1時間、６０℃で３時間攪拌し、加水分解させた。その後、メチルイソブチルケトン（以下、ＭＩＢＫと略す）２４０ｇ、炭酸ナトリウム４．２ｇ（０．０４ｍｏｌ）、及び蒸留水１６０ｇ（８．８９ｍｏｌ）を加え、室温で２０時間攪拌し、縮合させた。その後、水層が弱酸性（ｐＨ＝６程度）になるまで１Ｎ−塩酸を滴下して中和した。約４００ｇの蒸留水を用いて３回洗浄し有機層のＭＩＢＫを留去して目的のγ−グリシドキシプロピル基を置換基として有するラダー型シルセスキオキサン（ＳＱ−２）を得た（数平均分子量＝３０５８、重量平均分子量＝５１２８）。
Production Example 2
Synthesis of Ladder-Type Silsesquioxane Having a Substituent A reaction vessel equipped with a stirrer and a thermometer was charged with 94.4 g (0.38 mol) of γ-glycidoxypropyltrimethoxysilane and a 0.9% hydrochloric acid aqueous solution. 14.6 g (0.80 mol of water) was charged, and the mixture was stirred at room temperature for 1 hour and at 60 ° C for 3 hours to be hydrolyzed. Thereafter, 240 g of methyl isobutyl ketone (hereinafter abbreviated as MIBK), 4.2 g (0.04 mol) of sodium carbonate, and 160 g (8.89 mol) of distilled water were added, and the mixture was stirred at room temperature for 20 hours to condense. Then, 1N-hydrochloric acid was added dropwise and neutralized until the aqueous layer became weakly acidic (about pH = 6). Washing was performed three times using about 400 g of distilled water, and MIBK of the organic layer was distilled off to obtain a target ladder-type silsesquioxane (SQ-2) having a γ-glycidoxypropyl group as a substituent ( (Number average molecular weight = 3058, weight average molecular weight = 5128).
実施例１、２及び比較例１
表１に示す各成分及び組成でそれぞれ配合して混合し、均一な組成物を調製した。下記の条件で硬化させて硬化物を得た。
硬化条件：１２０℃、１０ｈ。
長さ約２０ｍｍ、幅約１０〜１５ｍｍ、厚さ約２ｍｍの試験片について、以下の方法で損失正接（ｔａｎδ）を求めた。０〜３００℃の範囲でｔａｎδの最大値を与える温度をチャートから読み取った。
また、２６０μｍ厚さの試験片について、以下の方法で、メタリングウエザーメーターの曝露の前後における３８０ｎｍの近紫外光の透過率の変化を求めて、メタリングウエザーメーター曝露による紫外線照射の影響を調べ、耐ＵＶ特性を測定した。結果をそれぞれ表１に示した。なお、表中の略号は以下のとおりである。
ＭＨ−７００Ａ：メチルヘキサヒドロ無水フタル酸−ヘキサヒドロ無水フタル酸（７０：３０混合物、酸無水当量１６８）（新日本理化社製）
ＴＰＰ−ＰＢ：テトラメチルホスホニウム・ブロミド（北興化学社製）
ＸＮＲ５２１２Ｂ：エポキシ樹脂組成物
ＸＮＨ５２１２：変性脂環式酸無水物
ただし、ＸＮＲ５２１２Ｂ及びＸＮＨ５２１２はＬＥＤ封止用エポキシ樹脂と硬化剤（ナガセケムテックス社製）である。
Examples 1 and 2 and Comparative Example 1
Each component and composition shown in Table 1 were blended and mixed to prepare a uniform composition. The composition was cured under the following conditions to obtain a cured product.
Curing conditions: 120 ° C., 10 h.
The loss tangent (tan δ) of a test piece having a length of about 20 mm, a width of about 10 to 15 mm, and a thickness of about 2 mm was determined by the following method. The temperature giving the maximum value of tan δ in the range of 0 to 300 ° C. was read from the chart.
Further, with respect to a test piece having a thickness of 260 μm, the change in the transmittance of near-ultraviolet light at 380 nm before and after exposure to the metalling weather meter was determined by the following method, and the effect of ultraviolet irradiation by the metalling weather meter exposure was examined. And UV resistance were measured. The results are shown in Table 1. The abbreviations in the table are as follows.
MH-700A: methyl hexahydrophthalic anhydride-hexahydrophthalic anhydride (70:30 mixture, acid anhydride equivalent 168) (manufactured by Shin Nippon Rika Co., Ltd.)
TPP-PB: Tetramethylphosphonium bromide (Hokuko Chemical Co., Ltd.)
XNR5212B: Epoxy resin composition XNH5212: Modified alicyclic anhydride An XNR5212B and XNH5212 are an LED sealing epoxy resin and a curing agent (manufactured by Nagase ChemteX Corporation).
評価方法
Ｔｇ：動的粘弾性測定（曲げモード、１Ｈｚ）によるｔａｎδピーク温度として求めた。測定は、セイコーインスツルメント社製粘弾性測定装置ＤＭＳ６１００を用いて、両持ち曲げモードで１Ｈｚの正弦歪みを印加することにより行った。測定温度範囲は０〜３００℃で、昇温速度は２℃／ｍｉｎとした。
耐ＵＶ特性：２６０μｍ厚の試験片の３８０ｎｍ光の初期透過率ｔ０（％）、及び、メタリングウエザーメーター（スガ試験機社製Ｍ６Ｔ）５０ｈ曝露（８３℃、相対湿度２０％）（放射照度１．２４ｋＷ／ｍ２（紫外部））後の３８０ｎｍ光の透過率ｔ１（％）を求め、耐ＵＶ特性＝（ｔ１／ｔ０）×１００（％）とした。
Evaluation method Tg: determined as a tan δ peak temperature by dynamic viscoelasticity measurement (bending mode, 1 Hz). The measurement was performed using a viscoelasticity measuring device DMS6100 manufactured by Seiko Instruments Inc. by applying a sinusoidal strain of 1 Hz in a double-ended bending mode. The measurement temperature range was 0 to 300 ° C, and the rate of temperature rise was 2 ° C / min.
UV resistance: Initial transmittance t 0 (%) of a 380 nm light of a test piece having a thickness of 260 μm, and exposure to a metalling weather meter (M6T manufactured by Suga Test Instruments Co., Ltd.) for 50 hours (83 ° C., relative humidity 20%) (irradiance) The transmittance t 1 (%) of 380 nm light after 1.24 kW / m 2 (ultraviolet) was determined, and the UV resistance = (t 1 / t 0 ) × 100 (%).
上記実施例から、シルセスキオキサンエポキシを酸無水物で硬化した実施例１及び２の硬化物は、従来のＬＥＤ封止材と同程度のＴｇを有していて、ＵＶ曝露を受けた後も近紫外領域の透過率が殆ど低下しないことがわかった。
一方、従来の典型的な透明エポキシ樹脂硬化物である比較例１の場合は、ＵＶ曝露を受けた後の近紫外領域の透過率が著しく低下していた。
このように、本発明の組成物の硬化物は、従来の典型的なＬＥＤ封止材では殆ど実用に耐えないようなＵＶ曝露を受ける条件でも、殆ど透過率の低下がなく、極めて優れた耐ＵＶ特性を有するものであることが確認された。また、本発明の組成物からなる形成物の厚さも従来のエポキシ樹脂と同様に厚くすることができ、数ミクロン乃至十数ミクロン程度が限界とされる従来技術の水素シルセスキオキサン樹脂膜では実現困難である封止材用途に有利に適用できることが確認された。
なお、メタリングウエザーメーターにおける曝露試験は、一般のサンシャインウェザオメーターの約１０倍の耐候促進能力があるので、５０時間の曝露は５００時間のサンシャインウェザオメーター曝露にほぼ相当する。
From the above examples, the cured products of Examples 1 and 2, in which silsesquioxane epoxy was cured with an acid anhydride, had a Tg comparable to that of a conventional LED encapsulant, and after being subjected to UV exposure. It was also found that the transmittance in the near ultraviolet region hardly decreased.
On the other hand, in the case of Comparative Example 1, which is a typical cured conventional transparent epoxy resin, the transmittance in the near ultraviolet region after being exposed to UV light was significantly reduced.
As described above, the cured product of the composition of the present invention has almost no decrease in transmittance even under the condition of exposure to UV which is hardly practical for a conventional typical LED encapsulant, and has extremely excellent resistance to heat. It was confirmed that the product had UV characteristics. In addition, the thickness of the formed product composed of the composition of the present invention can be increased similarly to the conventional epoxy resin, and in the conventional hydrogen silsesquioxane resin film having a limit of about several microns to several tens of microns, It was confirmed that the method can be advantageously applied to a sealing material that is difficult to realize.
The exposure test using a metering weather meter has about 10 times the ability of accelerating the weather resistance of a general sunshine weatherometer, so that 50 hours of exposure is almost equivalent to 500 hours of sunshine weatherometer exposure.
本発明は、従来のエポキシ樹脂系封止剤の欠点を克服しエポキシ樹脂に代わる紫外乃至青色光素子用封止材として極めて好適である。 INDUSTRIAL APPLICABILITY The present invention overcomes the drawbacks of the conventional epoxy resin-based sealant, and is extremely suitable as a sealant for ultraviolet to blue light elements that replaces epoxy resin.
Claims (8)
（Ｘ−Ｒ−Ｓｉ）ｎ・Ｏ（３ｎ−ｍ）／２（ＯＨ）ｍ−ａ・（Ｒ′）ａ （１）
（式（１）中、ｎは４〜１８の整数、ｍは０又はｎ＋２以下の整数、ただし、ｍが０のときはｎは６〜１８の偶数である。ａは０〜ｍの整数である。複数のＲは、同一又は異なって、直接結合、ハロゲン置換基を有していてもよい炭素数１〜２０のアルキレン基、炭素数５〜１２のシクロアルキレン基、エーテル結合を含有する炭素数１〜２０の２価の炭化水素基、エステル結合を含有する炭素数１〜２０の２価の炭化水素基、及び、置換基を有していてもよいオルガノシロキシ基を含有する炭素数１〜１２の２価の炭化水素基からなる群から選択された少なくとも１種である。複数のＸは、同一又は異なって、エポキシ基、３，４−エポキシシクロヘキシル基、ビニル基、及び、Ｒとともにヒドロシリル基を構成していてもよい水素原子からなる群から選択される少なくとも１種であり、Ｒ′は、−Ｏ−Ｒ′′又は−Ｏ−Ｓｉ（Ｒ′′）３（Ｒ′′は水素原子であってもよい置換基。ただし、Ｒ′′が複数あるときは同一でも異なっていてもよい。）を表し、かつ、複数のＸ及びＲ′′のうち少なくとも二つは架橋点を形成し得るものである。ただし、Ｒ′が複数あるときは同一でも異なっていてもよい。） The sealing material according to claim 1, wherein the silsesquioxane having a substituent is at least one silsesquioxane having a cage structure represented by the general formula (1).
(X-R-Si) n · O (3 nm) / 2 (OH) ma · (R ′) a (1)
(In the formula (1), n is an integer of 4 to 18, m is 0 or an integer of n + 2 or less, provided that when m is 0, n is an even number of 6 to 18. a is an integer of 0 to m. A plurality of Rs may be the same or different and each may be a direct bond, an alkylene group having 1 to 20 carbon atoms which may have a halogen substituent, a cycloalkylene group having 5 to 12 carbon atoms, or a carbon atom having an ether bond. A divalent hydrocarbon group having 1 to 20 carbon atoms, a divalent hydrocarbon group having 1 to 20 carbon atoms containing an ester bond, and 1 carbon atom containing an organosiloxy group which may have a substituent X is at least one selected from the group consisting of divalent hydrocarbon groups of from 12 to 12. A plurality of Xs are the same or different and are together with an epoxy group, a 3,4-epoxycyclohexyl group, a vinyl group, and R Is it a hydrogen atom that can constitute a hydrosilyl group? It is at least one selected from the group consisting, R 'is, -O-R''or -O-Si (R'') 3 (R'' substituent may be a hydrogen atom. However, R '' may be the same or different when there are a plurality of R ''), and at least two of X and R '' are capable of forming a crosslinking point, provided that R 'is When there is more than one, they may be the same or different.)
（Ｘ−Ｒ−Ｓｉ）ｎ・Ｏ（３ｎ−ｍ）／２（ＯＨ）ｍ−ａ・（Ｒ′）ａ （１）
（式（１）中、ｎは４〜１８の整数、ｍは０又はｎ＋２以下の整数、ただし、ｍが０のときはｎは６〜１８の偶数である。ａは０〜ｍの整数である。複数のＲは、同一又は異なって、直接結合、ハロゲン置換基を有していてもよい炭素数１〜２０のアルキレン基、炭素数５〜１２のシクロアルキレン基、エーテル結合を含有する炭素数１〜２０の２価の炭化水素基、エステル結合を含有する炭素数１〜２０の２価の炭化水素基、及び、置換基を有していてもよいオルガノシロキシ基を含有する炭素数１〜１２の２価の炭化水素基からなる群から選択された少なくとも１種である。複数のＸは、同一又は異なって、エポキシ基、３，４−エポキシシクロヘキシル基、ビニル基、及び、Ｒとともにヒドロシリル基を構成していてもよい水素原子からなる群から選択される少なくとも１種であり、Ｒ′は、−Ｏ−Ｒ′′又は−Ｏ−Ｓｉ（Ｒ′′）３（Ｒ′′は水素原子であってもよい置換基。ただし、Ｒ′′が複数あるときは同一でも異なっていてもよい。）を表し、かつ、複数のＸ及びＲ′′のうち少なくとも二つは架橋点を形成し得るものである。ただし、Ｒ′が複数あるときは同一でも異なっていてもよい。） An optical element for light having a peak wavelength of 350 to 490 nm, which is sealed with a crosslinked silsesquioxane of a cage-type structure represented by the general formula (1).
(X-R-Si) n · O (3 nm) / 2 (OH) ma · (R ′) a (1)
(In the formula (1), n is an integer of 4 to 18, m is 0 or an integer of n + 2 or less, provided that when m is 0, n is an even number of 6 to 18. a is an integer of 0 to m. A plurality of Rs may be the same or different and each may be a direct bond, an alkylene group having 1 to 20 carbon atoms which may have a halogen substituent, a cycloalkylene group having 5 to 12 carbon atoms, or a carbon atom having an ether bond. A divalent hydrocarbon group having 1 to 20 carbon atoms, a divalent hydrocarbon group having 1 to 20 carbon atoms containing an ester bond, and 1 carbon atom containing an organosiloxy group which may have a substituent X is at least one selected from the group consisting of divalent hydrocarbon groups of from 12 to 12. A plurality of Xs are the same or different and are together with an epoxy group, a 3,4-epoxycyclohexyl group, a vinyl group, and R Is it a hydrogen atom that can constitute a hydrosilyl group? It is at least one selected from the group consisting, R 'is, -O-R''or -O-Si (R'') 3 (R'' substituent may be a hydrogen atom. However, R '' may be the same or different when there are a plurality of R ''), and at least two of X and R '' are capable of forming a crosslinking point, provided that R 'is When there is more than one, they may be the same or different.)
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