JP2004336058A - Cmosインバータ - Google Patents
Cmosインバータ Download PDFInfo
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- JP2004336058A JP2004336058A JP2004137998A JP2004137998A JP2004336058A JP 2004336058 A JP2004336058 A JP 2004336058A JP 2004137998 A JP2004137998 A JP 2004137998A JP 2004137998 A JP2004137998 A JP 2004137998A JP 2004336058 A JP2004336058 A JP 2004336058A
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- transistor
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- cmos inverter
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- 239000000758 substrate Substances 0.000 claims description 28
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
【課題】 より効率的なレイアウトのCMOSインバータを提供する。
【解決手段】 第1ゲート、第1ドレイン、および第1ソースを含む第1トランジスタ、第2ゲート、第2ドレイン、および第2ソースを含み、前記第1トランジスタに隣接して置かれる第2トランジスタ、略Z字形をした第1コネクタを含み、前記第1ゲートと前記第2ゲートに有効的に接続するインバータの入力、および第1コネクタを含み、前記第1ドレインと前記第2ドレインとに動作可能に接続するインバータの出力を含むCMOSインバータ。
【選択図】 図1
Description
10 第1トランジスタ
11 第1トランジスタ形成領域
12 第1ソース
13 ソース領域
14 第1ゲート
20 第2トランジスタ
21 第2トランジスタ形成領域
22 ソース領域
24 第2ゲート
25 ゲート領域
26 第2ドレイン
27 ドレイン領域
30 第1直線部
40 第2直線部
50 第1コネクタ
51 入力
52 第1コネクタ脚部
54 第3コネクタ脚部
56 第2コネクタ脚部
58 第2コネクタ
59 出力
60、62 トランジスタペア
70、72 トランジスタペア
Claims (8)
- 第1ゲート、第1ドレイン、および第1ソースを含む第1トランジスタと、
第2ゲート、第2ドレイン、および第2ソースを含み、前記第1トランジスタに隣接して配置された第2トランジスタと、
前記第1ゲートと前記第2ゲートとを動作可能に接続する略Z字形にされた第1コネクタからなる、インバータのための入力端と、および
前記第1ドレインと前記第2ドレインとを動作可能に接続する第2コネクタからなる、インバータのための出力端と、を備えることを特徴とするCMOS(Complementary Metal−Oxide−Semiconductor)インバータ。 - 前記第1トランジスタまたは前記第2トランジスタの少なくとも1つが薄膜トランジスタである請求項1に記載のCMOSインバータ。
- 前記第1トランジスタは、半導体基板の第1導電型領域における半導体基板上の第1トランジスタ形成領域に設けられ、
前記第1トランジスタ形成領域は、第1方向に延伸した第1直線部と、前記第1直線部に定義されたドレイン領域と、前記第1直線部に定義されたゲート領域と、前記第1直線部に定義されたソース領域とからなり、
前記第2トランジスタは、半導体基板の第2導電型領域における半導体基板上の第2トランジスタ形成領域に設けられ、
前記第2トランジスタ形成領域は、前記第1方向の第1直線部にほぼ平行な方向に延伸した第2直線部と、前記第2直線部に定義されたドレイン領域と、前記第2直線部に定義されたゲート領域と、前記第2直線部に定義されたソース領域とからなり、
前記第1コネクタは、前記第1ゲートと動作可能に接続されるとともに第1トランジスタ形成領域にほぼ垂直に配置された第1コネクタ脚部と、前記第2ゲートと動作可能に接続されるとともに第2トランジスタ形成領域にほぼ垂直に配置された第2コネクタ脚部と、前記第1コネクタ脚部と前記第2コネクタ脚部とへ動作可能に接続されるとともに前記第1トランジスタ形成領域と前記第2トランジスタ形成領域にほぼ平行に配置される第3コネクタ脚部とからなり、
前記第1コネクタ脚部の第1既定部分は、前記第3コネクタ脚部の一方側に配置され、前記第2コネクタ脚部の第2既定部分は、前記第3コネクタ脚部の反対側に配置された請求項1に記載のCMOSインバータ。 - 前記第1トランジスタ形成領域は、N−型トランジスタ、またはP−型トランジスタの少なくとも1つにより定義され、
前記第2トランジスタ形成領域は、前記第1トランジスタの逆型トランジスタにより定義される請求項3に記載のCMOSインバータ。 - 前記第1トランジスタ形成領域と前記第2トランジスタ形成領域は、基板上に並んで設けられ、
前記第1ゲートは、前記第2ゲートにほぼ重なるようにされた請求項3に記載のCMOSインバータ。 - 前記第1トランジスタ、前記第2トランジスタ、電源VDD、および電源VSSからなる回路幅は、第1トランジスタが約28μmで、第2トランジスタが約6μmである請求項1に記載のCMOSインバータ。
- CMOSインバータは、低温ポリシリコン(LTPS)トランジスタ(TFT)の製造技術、またはポリマー(有機)トランジスタ(TFT)の製造技術により製造される請求項1に記載のCMOSインバータ。
- CMOSインバータは、少なくともガラス基板、或いはプラスチック基板の上の1つに形成される請求項7に記載のCMOSインバータ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/434,296 US20040222422A1 (en) | 2003-05-08 | 2003-05-08 | CMOS inverter layout |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2004336058A true JP2004336058A (ja) | 2004-11-25 |
Family
ID=33416659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004137998A Pending JP2004336058A (ja) | 2003-05-08 | 2004-05-07 | Cmosインバータ |
Country Status (4)
Country | Link |
---|---|
US (1) | US20040222422A1 (ja) |
JP (1) | JP2004336058A (ja) |
CN (1) | CN1316621C (ja) |
TW (1) | TW200425387A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100652424B1 (ko) | 2005-08-12 | 2006-12-01 | 삼성전자주식회사 | Cmos 인버터 셀 |
JP2008305837A (ja) * | 2007-06-05 | 2008-12-18 | Oki Electric Ind Co Ltd | 半導体装置 |
CN102105988A (zh) * | 2008-07-30 | 2011-06-22 | 住友化学株式会社 | 半导体装置的制造方法及半导体装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103545354A (zh) * | 2012-07-10 | 2014-01-29 | 无锡维赛半导体有限公司 | 一种功率晶体管 |
US8762911B1 (en) | 2013-05-07 | 2014-06-24 | International Business Machines Corporation | Layout and design system for increasing electric current in CMOS inverters |
CN106057153B (zh) * | 2016-07-20 | 2018-11-23 | 武汉华星光电技术有限公司 | 反相器结构及其显示面板 |
CN106129068B (zh) * | 2016-07-25 | 2019-02-22 | 武汉华星光电技术有限公司 | 一种反相器结构及其显示面板 |
TWI720077B (zh) * | 2016-12-07 | 2021-03-01 | 聯華電子股份有限公司 | 半導體元件的布局 |
US20230307363A1 (en) * | 2022-03-24 | 2023-09-28 | International Business Machines Corporation | Semiconductor device design mitigating latch-up |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6072257A (ja) * | 1983-09-28 | 1985-04-24 | Nec Corp | 半導体集積回路 |
JPH01166400A (ja) * | 1987-12-23 | 1989-06-30 | Toshiba Corp | スタティック型ランダムアクセスメモリ |
US5274279A (en) * | 1988-05-17 | 1993-12-28 | Seiko Epson Corporation | Thin film CMOS inverter |
US5206533A (en) * | 1991-06-24 | 1993-04-27 | Texas Instruments Incorporated | Transistor device with resistive coupling |
US5817550A (en) * | 1996-03-05 | 1998-10-06 | Regents Of The University Of California | Method for formation of thin film transistors on plastic substrates |
JP3154090B2 (ja) * | 1997-03-28 | 2001-04-09 | ローム株式会社 | 抵抗内蔵トランジスタ |
JPH1145949A (ja) * | 1997-07-28 | 1999-02-16 | Mitsubishi Electric Corp | スタティック型半導体記憶装置およびその製造方法 |
KR100306372B1 (ko) * | 1998-06-29 | 2001-10-19 | 박종섭 | 반도체소자의 게이트전극 형성방법 |
US6293803B1 (en) * | 2000-02-09 | 2001-09-25 | Trw Inc. | Zee electrical interconnect |
JP4357101B2 (ja) * | 2000-08-23 | 2009-11-04 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
-
2003
- 2003-05-08 US US10/434,296 patent/US20040222422A1/en not_active Abandoned
-
2004
- 2004-03-17 TW TW093107058A patent/TW200425387A/zh unknown
- 2004-03-26 CN CNB2004100312353A patent/CN1316621C/zh not_active Expired - Fee Related
- 2004-05-07 JP JP2004137998A patent/JP2004336058A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100652424B1 (ko) | 2005-08-12 | 2006-12-01 | 삼성전자주식회사 | Cmos 인버터 셀 |
JP2008305837A (ja) * | 2007-06-05 | 2008-12-18 | Oki Electric Ind Co Ltd | 半導体装置 |
CN102105988A (zh) * | 2008-07-30 | 2011-06-22 | 住友化学株式会社 | 半导体装置的制造方法及半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN1316621C (zh) | 2007-05-16 |
CN1536668A (zh) | 2004-10-13 |
TW200425387A (en) | 2004-11-16 |
US20040222422A1 (en) | 2004-11-11 |
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