TWI720077B - 半導體元件的布局 - Google Patents
半導體元件的布局 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 53
- 238000009413 insulation Methods 0.000 claims description 18
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 238000002955 isolation Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
一種半導體元件的布局,包含第一主動區、第二主動區、多個閘極、第一導電層與多個插塞。第一主動區與第二主動區是設置於基底並被淺溝渠絕緣區域環繞。多個閘極相互平行地設置在基底上,並橫跨第一主動區與第二主動區。第一導電層是覆蓋在多個閘極上,其中,多個閘極是藉由第一導電層而相互電連接。多個插塞則是設置在第一導電層上並電連接多個閘極。
Description
本發明是關於一種半導體元件的布局,特別來說,是關於一種反相器(inverter)結構的布局(layout)。
半導體積體電路是現代化資訊社會最重要的硬體基礎之一,如何提高積體電路的積集度,讓積體電路的佈局面積能夠更有效率地被運用,也成為現代半導體工業的研發重點。
一般來說,功能複雜的積體電路是由一群具有基本功能的標準元件組合而成的。舉例來說,數位積體電路中常會以各種邏輯閘,例如是及閘(AND gate)、或閘(OR gate)、反或閘(NOR gate)、反相器(inverter)等與正反器(flip-flop)等基本的電路單元或標準元件來組合出積體電路的整體功能。
然而,由於各種元件需要的設置面積彼此差異,因此,將多種元件混合置放常會犧牲晶片珍貴的面積,並且增加佈局設計與製程的複雜度。因此,目前仍然需要一種可有效節省空間配置的佈局設計。
本發明之一目的在於提供一種半導體元件的布局,其是在一反相器結構中設置一導電層,利用該導電層電連接不同的金氧半導體電晶體(metal-oxide semiconductor transistor,MOS transistor),藉此,在插塞結構形成之前即先建立該反向器結構部份的內連接系統。在此情況下,該半導體元件的元件尺寸可被大幅地縮小約20%左右。
為達上述目的,本發明之一實施例提供一種半導體元件,包含一第一主動區、一第二主動區、複數個閘極、一第一導電層與複數個插塞。該第一主動區與該第二主動區是設置於一基底並被一淺溝渠絕緣區域環繞。該些閘極相互平行地設置在該基底上,並橫跨該第一主動區與該第二主動區。該第一導電層是覆蓋在該些閘極上,其中,該些閘極是藉由該第一導電層而相互電連接。該些插塞則是設置在該第一導電層上並電連接該些閘極。
本發明的半導體元件主要是利用插塞製程前的導電層來構成部分的內連接系統,藉此,可減少後續插塞形成的數量並使插塞的配置更為彈性,因而可有效縮小半導體元件(如反相器)的整體布局,例如是縮小約20%或是20%以上。另外,本發明的半導體元件還可選擇形成有僅部分重疊擴散區(如源極區等)的插塞結構,該插塞結構僅部分區域是直接接觸該擴散區,其他區域則是位在鄰近的淺溝渠絕緣區域上,藉此,可不需將該插塞結構完全形成在該擴散區或閘極正上方,因而可更有效地縮小整體布局。
100、300、300a、300b、300c:反相器
101、301:淺溝渠絕緣區域
102、302、104、304:主動區域
110、310:閘極
121、141、321、341:源極區
122、142、323、343:汲極區
150a、150b、350a、350b:電晶體區
160:插塞
181、182、183:金屬導線
311:閘極介電層
313:閘極電極層
315:側壁子
360、360a、360b、360c:金屬導電層
361:絕緣蓋層
362:開口
380、380a、380b、380c:插塞
390、410:絕緣層
400、405:金屬導線
401:高壓導線
403:低壓導線
T、t1、t2:厚度
第1圖為本發明第一實施例中半導體元件之布局的示意圖。
第2圖至第3圖為本發明第二實施例中半導體元件之布局的示意圖。
第4圖為第3圖沿剖面線A-A’的剖面示意圖。
第5圖至第6圖為本發明第三實施例中半導體元件之布局的示意圖。
第7圖至第8圖為本發明第四實施例中半導體元件之布局的示意圖。
第9圖至第11圖為本發明第五實施例中半導體元件之布局的示意圖,其中,第10圖為第9圖沿剖面線B1-B1’與B2-B2’的剖面示意圖。
為使熟習本發明所屬技術領域的一般技藝者能更進一步了解本發明,下文特列舉本發明的數個較佳實施例,並配合所附圖式,詳細說明本發明的構成內容及所欲達成的功效。
請參照第1圖所示,其繪示本發明第一較佳實施例中,半導體元件的布局示意圖。首先,提供一半導體基底(未繪示),其上具有一主動區域(active area,AA)102、一主動區域104以及圍繞主動區域102、104的一淺溝渠絕緣(shallow trench isolation,STI)區域101,如第1圖所示。在一實施例中,該半導體基底例如是一矽基底、含矽基底(如SiC、SiGe)或矽覆絕緣(silicon-on-insulator,SOI)基底等,但不限於此。
至少一閘極110設置在該半導體基底上並朝向一第一方向
(如y方向)延伸,且閘極110同時橫跨主動區域102、104,如第1圖所示。在一實施例中,閘極110包含位在該半導體基底上的一閘極介電層(未繪示)、一閘極電極層(未繪示)以及環繞該閘極介電層與該閘極電極層的一側壁子(未繪示)。在本實施例中,是設置複數個閘極110,例如是如第1圖所示的四個閘極110。四個閘極110彼此互相連接並同時橫跨主動區域102、104,而可定義出兩個不同的電晶體區150a、150b。
電晶體區150a是由四個閘極110以及設置在主動區域102上且位在各閘極110兩側的源極區121與汲極區122所組成,而電晶體區150b則是由四個閘極110以及設置在主動區域104上且位在各閘極110兩側的源極區141與汲極區142所組成。電晶體區150a、150b可以是相同或不同的形式的電晶體區。需注意的是,在本實施例中,電晶體區150a較佳是一P型金氧半導體電晶體區,而電晶體區150b則較佳是一N型金氧半導體電晶體區,電晶體區150a、150b的汲極區122、142可透過設置於其上的插塞160連接至上方的一金屬導線181,而使彼此互相電連接;而電晶體區150a、150b的源極區121、141則同樣可透過設置於其上的插塞160分別連接至金屬導線182、183,而使電晶體區150a、150b可分別連接至一高壓源(Vdd)與低壓源(Vss),如第1圖所示。藉此,電晶體區150a、150b可分別作為一上拉電晶體(pull-up)區與下拉電晶體(pull-down)區,而構成一反相器(inverter)100。
由此,即構成本發明第一較佳實施例中半導體元件的布局。本實施例主是利用形成在主動區域102、104上的插塞160與金屬導線181、182、183構成內連接系統,藉此,形成反相器100的布局。
本領域者應可輕易了解,本發明的半導體元件的布局亦可能以其他樣態呈現,並不限於前述。因此,下文將進一步針對本發明之半導體元件布局的其他實施例或變化型進行說明。且為簡化說明,以下說明主要針對各實施例不同之處進行詳述,而不再對相同之處作重覆贅述。此外,本發明之各實施例中相同之元件係以相同之標號進行標示,以利於各實施例間互相對照。
請參照第2圖至第4圖所示,其繪示本發明第二較佳實施例中,半導體元件的布局示意圖,其中,第4圖為第3圖沿剖面線A-A’的剖面示意圖。本實施例同樣是提供一反相器300的布局,反相器300同樣包含一半導體基底(未繪示),以及其上具有的主動區域302、304與圍繞主動區域302、304的淺溝渠絕緣區域301,如第2圖所示。以上元件的特徵大體上與前述第一較佳實施中的主動區域102、104與淺溝渠絕緣101等相同,容不再贅述。
本實施例與前述第一較佳實施例的差異之一在於,本實施例是形成彼此分隔設置的複數個閘極,例如是如第4圖所示的四個閘極310。在一實施例中,各閘極310包含位在該半導體基底上的一閘極介電層311、一閘極電極層313以及環繞閘極介電層311與閘極電極層313的一側壁子315,如第4圖所示。閘極310是設置在該半導體基底上並朝向該第一方向(如y方向)延伸,而同時橫跨主動區域302、304。藉此,可定義出兩個不同的電晶體區350a、350b。
電晶體區350a是由四個閘極310以及設置在主動區域302上且位在各閘極310兩側的源極區321與汲極區323所組成,而電晶體區350b則是由四個閘極310以及設置在主動區域304上且位在各閘極310兩側的源極區341與汲極區343所組成。電晶體區350a、350b同樣可分別為P型金氧半導體電晶體區與N型金氧半導體電晶體區,並可分別作為上拉電晶體與下拉電晶體而構成反相器300,如第2圖所示。
本實施例與前述第一較佳實施例的另一差異處在於,在閘極310與後續的源極區/汲極區等製程完成後,即在該半導體基底上依序設置一絕緣蓋層361與一金屬導電層360,如第4圖所示。具體來說,先在閘極310與主動區域302、304上共形地形成絕緣蓋層361,其例如是包含氧化矽(SiOx)、氮化矽(SiN)或氮氧化矽(SiON)等,絕緣蓋層361可直接接觸下方的閘極310與主動區域302、304。然後,在絕緣蓋層361上形成複數個開口362,開口362可位在閘極310的上方或是源極區321、341與汲極區323、343的上方,暴露出閘極310的部分上表面及/或源極區321、341與汲極區323、343的上表面。接著,在絕緣蓋層361上方形成一導電材料層(未繪示)填入開口362中,並進行一微影蝕刻製程,圖案化該導電材料層,形成金屬導電層360。金屬導電層360例如是包含鈦(Ti)、氮化鈦(TiN)或鎢(W)等金屬材質,其具有小於閘極310的一厚度t1,並可透過填入開口362的部分與暴露的閘極310、源極區321、341及/或汲極區323、343的上表面接觸並電連接,甚至進一步延伸至相鄰的淺溝渠絕緣區域301上,如第2圖所示。藉此,本實施例的四個閘極310即可直接利用上方的金屬導電層360而彼此電連接,而不需藉助於後續形成的插塞。
然後,在該半導體基底上全面地形成整體平坦的一絕緣層390,覆蓋金屬導電層360與閘極310,並在絕緣層390內形成複數個插塞380,電連接閘極310源極區321、341與汲極區323、343。在本實施例中,絕緣層190具有一厚度T,其約是金屬導電層360或絕緣蓋層厚度t1/t2的7倍至10倍左右。插塞380則是形成在絕緣層390內,其下表面直接接觸金屬導電層360,而其上表面則與絕緣層390的上表面其平,如第4圖所示。由此,本實施例的插塞380可透過金屬導電層360而電連接至下方的閘極310、源極區321、341及/或汲極區323、343。另一方面,因設置有金屬導電層360的關係,閘極310、源極區321、341或汲極區323、343的導通範圍已被延伸至鄰近的淺溝渠絕緣區域301上。因此,後續的插塞380可直接形成在淺溝渠絕緣區域301上,如第3圖及第4圖所示,而不需形成在直接對位於閘極310、源極區321、341或汲極區323的位置,更不需直接接觸閘極310。同時,電連接閘極310的插塞製程,因可直接形成在閘極310兩側的淺溝渠絕緣區域301,而可避免受到下方閘極310的影響。
之後,再繼續於絕緣層390上形成絕緣層410與金屬導線400。如第4圖所示,金屬導線400是形成在絕緣層410內,並透過插塞380與金屬導電層360而分別與下方的閘極310、源極區321、341或汲極區323、343電連接。具體來說,金屬導線400包含一高壓導線(Vdd)401,以及一低壓導線(VSS)403,如接地(ground)線等,透過金屬導線400、插塞380與金屬導電層360共同構成的內連接系統,使電晶體區350a的源極區321可電連接至高壓導線401,並使電晶體區350b的源
極區341可電連接至低壓導線403,構成反相器300的布局。另一方面,電晶體區350a、350b的汲極區323、343亦可透過金屬導線405而彼此電連接,如第3圖所示。
由此,即完成本發明第二較佳實施例中反相器300的布局。本實施例是同時利用插塞380形成前的金屬導電層360、插塞380以及插塞380形成後的金屬導線400共同構成反相器300的內連接系統。藉此,反相器300的四個閘極310可利用位在其上的金屬導電層360電連接彼此。再且,利用金屬導電層360可進一步將閘極310、源極區321、341或汲極區323、343的導通範圍進一步延伸至鄰近的淺溝渠絕緣區域301上,而後的插塞製程則可省去將插塞直接形成在閘極310、源極區321、341或汲極區323、343上方的麻煩。由此,不僅可避免形成長短差異的插塞,而插塞380的設置位置可更為彈性,例如是部分重疊淺溝渠絕緣區域301等,而免於受到下方閘極310的影響。另一方面,一部分電連接源極區321、341與金屬導線400的插塞380,還可選擇直接形成在淺溝渠絕緣區域301,再透過下方的金屬導電層360來達到電連接的效果。因此,在本實施例中,插塞380的配置可更為彈性,因而使反相器300的整體布局可相對縮小,對比於第一較佳實施例中的反相器100的布局則約可縮小20%左右,但不以此為限。
請參照5圖至第6圖所示,其繪示本發明第三較佳實施例中,半導體元件的布局示意圖。本實施例同樣是提供一反相器300a的布局,反相器300a同樣包含一半導體基底(未繪示)、主動區域302、304、圍繞主動區域302、304的淺溝渠絕緣區域301與閘極310等,如第5圖所
示。以上元件大體上與前述第二實施例相同,容不再贅述。
本實施例與前述第二較佳實施例的差異在於,在本實施例中,電晶體區350a的兩個汲極區323,在插塞380a形成之前,即先透過金屬導電層360a彼此電連接,如第5圖所示。同樣地,電晶體區350b的兩個汲極區343,亦是在插塞380a形成之前,即先透過金屬導電層360a彼此電連接。後續,再接著形成絕緣層390、插塞380a、絕緣層410與金屬導線400。如第6圖所示,本實施例的源極區321可電連接至高壓導線401,而源極區341則可電連接至低壓導線403,使電晶體區350a、350b可共同構成反相器300的布局。然而,在本實施例中,電晶體區350a內的兩個汲極區323與電晶體區350b內的兩個汲極區343已先透過金屬導電層360a分別電連接,因此,僅需設置少量的插塞380a在汲極區323、343上,即可透過金屬導線405a而使電晶體區350a、350b的汲極區323、343彼此電連接。
由此,即完成本發明第三較佳實施例中反相器300a的布局。本實施例是進一步利用金屬導電層360a完成電晶體區350a、350b的汲極區323、343之間的電連接關係,因此,可大幅減少後續形成插塞380a的數量。藉此,本實施例之反相器300a的整體布局可更為縮小,例如是約縮小23%左右,但不以此為限。
請參照7圖至第8圖所示,其繪示本發明第四較佳實施例中,半導體元件的布局示意圖。本實施例同樣是提供一反相器300b的布局,反相器300b同樣包含一半導體基底(未繪示)、主動區域302、304、
圍繞主動區域302、304的淺溝渠絕緣區域301與閘極310等,如第7圖所示。以上元件大體上與前述第二實施例相同,容不再贅述。
本實施例與前述第二較佳實施例的差異在於,在本實施例中,電晶體區350a的三個源極區321,在插塞380b形成之前,即先透過金屬導電層360b彼此電連接,如第7圖所示。同樣地,電晶體區350b的兩個源極區341,亦是在插塞380b形成之前,即先透過金屬導電層360b彼此電連接。另外,在本實施例中,電晶體區350a的兩個汲極區323與電晶體區350b的兩個汲極區343,不僅是透過金屬導電層360b分別電連接在一起,還進一步將電連接汲極區323與汲極區343的金屬導電層360b拉在一起,如第7圖所示。其中,電連接汲極區323與汲極區343的金屬導電層360b還可選擇橫跨一部分的閘極310,如第7圖所示,但不以此為限。
後續,再接著形成絕緣層390、插塞380b、絕緣層410與金屬導線400。如第8圖所示,本實施例的源極區321可電連接至高壓導線401,而源極區341則可電連接至低壓導線403,使電晶體區350a、350b可共同構成反相器300b的布局。然而,在本實施例中,電晶體區350a、350b內的汲極區323、343已先透過金屬導電層360b將其拉再一起,因此,不需再設置額外的插塞或金屬導線來使其電連接,因此,在本實施例中,可省略電連接汲極區323、343的插塞與金屬導線的設置。藉此,本實施例之300b的整體布局相對於前述各實施例可再為縮小。
請參照9圖至第11圖所示,其繪示本發明第五較佳實施例
中,半導體元件的布局示意圖,其中,第10圖為第9圖沿剖面線B1-B1’與B2-B2’的剖面示意圖。本實施例同樣是提供一反相器300c的布局,反相器300c同樣包含一半導體基底(未繪示)、主動區域302、304、圍繞主動區域302、304的淺溝渠絕緣區域301與閘極310等,如第5圖所示。以上元件大體上與前述第四實施例相同,容不再贅述。
本實施例與前述第二較佳實施例的差異在於,在本實施例中,僅利用金屬導電層360c使各閘極310彼此電連接,並且使電晶體區350a的兩個汲極區323與電晶體區350b的兩個汲極區343電連接,如第9圖所示。然後,形成複數個插塞380c。插塞380c同樣是形成在絕緣層390內,分別電連接閘極310與電晶體區350a、350b的源極區321、341。需注意的是,電連接閘極310的插塞380c是透過金屬導電層360c而電連接閘極310,因此,僅需接觸金屬導電層360c即可達到電連接閘極310的效果。而電連接源極區321、341的插塞380c,則是穿過全面覆蓋該半導體基底的絕緣蓋層361,而直接接觸源極區321、341,如第9圖及第10圖所示。此外,在本實施例中,電連接源極區321、341的插塞380c較佳是具有一溝槽狀,該溝槽同樣是朝該第一方向(如y方向)延伸,並且部分重疊源極區321、341與淺溝渠絕緣區域101。也就是說,電連接源極區321、341的插塞380c並不是對位源極區321、341而形成,且插塞380a僅需部分接觸源極區321、341,即可達到電連接的效果。
後續,繼續形成絕緣層410與金屬導線400。藉此,如第11圖所示,本實施例的源極區321、341可透過插塞380c而分別電連接至高壓導線401與低壓導線403,使電晶體區350a、350b可共同構成反相
器300c的布局。由此,即完成本發明第五較佳實施例中反相器300c的布局。本實施例是分別利用插塞380c形成前的金屬導電層360c與插塞380c分別電連接電晶體區350a、350b的汲極區323、343與源極區321、341。在本實施例中,電連接源極區321、341的插塞380c並不是對位源極區321、341而形成,而僅部分重疊源極區321、341,其他部分則是位在鄰近的淺溝渠絕緣區域101上。藉此,使插塞380c的配置更為彈性,並大幅減少後續形成插塞380c的數量。藉此,本實施例之反相器300c的整體布局相對於前述各實施例可再為縮小。
總而言之,本發明主要是利用插塞製程前的金屬導電層構成部分的內連接系統,藉此,可減少後續插塞形成的數量並使插塞的配置更為彈性,因而可有效縮小半導體元件(如反相器)的整體布局,例如是縮小約20%或是20%以上。另外,本發明還可選擇形成僅部分重疊擴散區(如源極區等)的插塞結構,該插塞結構僅部分區域是直接接觸該擴散區,其他區域則是位在鄰近的淺溝渠絕緣區域上,藉此,可避免該插塞結構的配置造成整體布局的擴大。雖然前述實施例皆是以反相器的布局做為實施樣態說明,但本發明的金屬導電層與插塞結構還可進一步應用在其他的半導體元件,如正反器等,以在插塞形成前即建構該半導體元件部分的內連接系統,進而達到優化該半導體元件整體布局的效果。
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。
300:反相器
380:插塞
400:金屬導線
401:高壓導線
403:低壓導線
405:金屬導線
Claims (15)
- 一種半導體元件的布局,包含:一第一主動區與一第二主動區,設置於一基底並被一淺溝渠絕緣區域環繞;複數個閘極,相互平行地設置在該基底上,且橫跨該第一主動區與該第二主動區;一第一導電層,覆蓋在該些閘極上,其中,該些閘極藉由該第一導電層相互電連接;以及複數個插塞,設置在該第一導電層上並電連接該些閘極。
- 如申請專利範圍第1項所述之半導體元件的布局,其中,該第一導電層設置在該淺溝渠絕緣區域上。
- 如申請專利範圍第1項所述之半導體元件的布局,其中,該第一導電層具有一厚度,該厚度小於該些閘極的厚度。
- 如申請專利範圍第1項所述之半導體元件的布局,更包含:一第一絕緣層,設置在該些閘極與該第一導電層之間;以及一第二絕緣層,設置在該第一導電層上,且該些插塞設置在該第二絕緣層內。
- 如申請專利範圍第1項所述之半導體元件的布局,其中,該第一主動區包含一第一源極、一第一汲極、一第二源極與一第二 汲極分別設置在該些閘極的兩側。
- 如申請專利範圍第5項所述之半導體元件的布局,其中,該第一汲極與該第二汲極是透過一第二導電層相互電連接。
- 如申請專利範圍第6項所述之半導體元件的布局,其中,該第二導電層橫跨一部份的該些閘極。
- 如申請專利範圍第6項所述之半導體元件的布局,其中,該第二主動區包含一第三源極、一第三汲極、一第四源極與一第四汲極分別設置在該些閘極的兩側,該第三汲極與該第四汲極藉由該第二導電層電連接至該第一汲極與該第二汲極。
- 如申請專利範圍第5項所述之半導體元件的布局,其中,該第一源極與該第二源極是透過一第三導電層相互電連接。
- 如申請專利範圍第5項所述之半導體元件的布局,其中,該第一導電層分別覆蓋該第一源極、該第一汲極、該第二源極與該第二汲極,該第一源極與該第二源極透過該些插塞與設置於該些插塞上的一金屬層而彼此電連接。
- 如申請專利範圍第1項所述之半導體元件的布局,其中,該些閘極中,至少兩閘極彼此電連接。
- 如申請專利範圍第1項所述之半導體元件的布局,其中,該些插塞中,至少一插塞是部分設置在該淺溝渠絕緣區域上。
- 如申請專利範圍第5項所述之半導體元件的布局,其中,該些插塞中,至少一插塞是部分設置在該淺溝渠絕緣區域與該第一源極區上。
- 如申請專利範圍第13項所述之半導體元件的布局,其中,該些插塞具有一溝槽狀。
- 如申請專利範圍第5項所述之半導體元件的布局,其中,該些閘極、該第一主動區、該第一源極、該第一汲極、該第二源極與該第二汲極共同形成一P型金氧半導體電晶體或N型金氧半導體電晶體。
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US20020177260A1 (en) * | 2001-01-29 | 2002-11-28 | Koichi Matsumoto | Semiconductor device and method of fabricating the same |
TW200425387A (en) * | 2003-05-08 | 2004-11-16 | Au Optronics Corp | Improved CMOS inverter layout |
TW201104480A (en) * | 2009-04-30 | 2011-02-01 | Tela Innovations Inc | Circuitry and layouts for XOR and XNOR logic |
US7994583B2 (en) * | 2007-05-15 | 2011-08-09 | Kabushiki Kaisha Toshiba | Semiconductor device including n-type and p-type FinFET's constituting an inverter structure |
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US4602270A (en) * | 1985-05-17 | 1986-07-22 | United Technologies Corporation | Gate array with reduced isolation |
US6448631B2 (en) | 1998-09-23 | 2002-09-10 | Artisan Components, Inc. | Cell architecture with local interconnect and method for making same |
JP4833544B2 (ja) | 2004-12-17 | 2011-12-07 | パナソニック株式会社 | 半導体装置 |
US20070141798A1 (en) | 2005-12-20 | 2007-06-21 | Intel Corporation | Silicide layers in contacts for high-k/metal gate transistors |
GB2466313A (en) | 2008-12-22 | 2010-06-23 | Cambridge Silicon Radio Ltd | Radio Frequency CMOS Transistor |
JP5434360B2 (ja) | 2009-08-20 | 2014-03-05 | ソニー株式会社 | 半導体装置及びその製造方法 |
US9000483B2 (en) | 2013-05-16 | 2015-04-07 | United Microelectronics Corp. | Semiconductor device with fin structure and fabrication method thereof |
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US20020177260A1 (en) * | 2001-01-29 | 2002-11-28 | Koichi Matsumoto | Semiconductor device and method of fabricating the same |
TW200425387A (en) * | 2003-05-08 | 2004-11-16 | Au Optronics Corp | Improved CMOS inverter layout |
US7994583B2 (en) * | 2007-05-15 | 2011-08-09 | Kabushiki Kaisha Toshiba | Semiconductor device including n-type and p-type FinFET's constituting an inverter structure |
TW201104480A (en) * | 2009-04-30 | 2011-02-01 | Tela Innovations Inc | Circuitry and layouts for XOR and XNOR logic |
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