JP2004327615A5 - - Google Patents
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- Publication number
- JP2004327615A5 JP2004327615A5 JP2003118702A JP2003118702A JP2004327615A5 JP 2004327615 A5 JP2004327615 A5 JP 2004327615A5 JP 2003118702 A JP2003118702 A JP 2003118702A JP 2003118702 A JP2003118702 A JP 2003118702A JP 2004327615 A5 JP2004327615 A5 JP 2004327615A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- forming
- insulating layer
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 3
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000000470 constituent Substances 0.000 claims 1
- 229920001577 copolymer Polymers 0.000 claims 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 125000005582 pentacene group Chemical group 0.000 claims 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 claims 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 claims 1
- -1 polyphenylene vinylene Polymers 0.000 claims 1
- 229920000123 polythiophene Polymers 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229930192474 thiophene Natural products 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003118702A JP4070659B2 (ja) | 2003-04-23 | 2003-04-23 | 電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003118702A JP4070659B2 (ja) | 2003-04-23 | 2003-04-23 | 電界効果トランジスタの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004327615A JP2004327615A (ja) | 2004-11-18 |
| JP2004327615A5 true JP2004327615A5 (https=) | 2005-11-04 |
| JP4070659B2 JP4070659B2 (ja) | 2008-04-02 |
Family
ID=33498178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003118702A Expired - Fee Related JP4070659B2 (ja) | 2003-04-23 | 2003-04-23 | 電界効果トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4070659B2 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI119714B (fi) | 2005-06-16 | 2009-02-13 | Imbera Electronics Oy | Piirilevyrakenne ja menetelmä piirilevyrakenteen valmistamiseksi |
| WO2007129832A1 (en) * | 2006-05-04 | 2007-11-15 | Lg Chem, Ltd. | Composition for forming gate insulating layer of organic thin-film transistor and organic thin film transistor using the same |
| JP5347377B2 (ja) | 2007-08-31 | 2013-11-20 | 大日本印刷株式会社 | 縦型有機トランジスタ、その製造方法及び発光素子 |
| US9276134B2 (en) * | 2014-01-10 | 2016-03-01 | Micron Technology, Inc. | Field effect transistor constructions and memory arrays |
| CN116230764B (zh) * | 2022-03-30 | 2024-03-15 | 北京超弦存储器研究院 | 场效应管、存储器及其制备方法 |
-
2003
- 2003-04-23 JP JP2003118702A patent/JP4070659B2/ja not_active Expired - Fee Related
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