JP4070659B2 - 電界効果トランジスタの製造方法 - Google Patents

電界効果トランジスタの製造方法 Download PDF

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Publication number
JP4070659B2
JP4070659B2 JP2003118702A JP2003118702A JP4070659B2 JP 4070659 B2 JP4070659 B2 JP 4070659B2 JP 2003118702 A JP2003118702 A JP 2003118702A JP 2003118702 A JP2003118702 A JP 2003118702A JP 4070659 B2 JP4070659 B2 JP 4070659B2
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Japan
Prior art keywords
electrode
insulating layer
layer
forming
field effect
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JP2003118702A
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Japanese (ja)
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JP2004327615A5 (https=
JP2004327615A (ja
Inventor
敦央 井上
重恭 森
信之 松本
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Sharp Corp
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Sharp Corp
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Priority to JP2003118702A priority Critical patent/JP4070659B2/ja
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Publication of JP2004327615A5 publication Critical patent/JP2004327615A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs

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  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2003118702A 2003-04-23 2003-04-23 電界効果トランジスタの製造方法 Expired - Fee Related JP4070659B2 (ja)

Priority Applications (1)

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JP2003118702A JP4070659B2 (ja) 2003-04-23 2003-04-23 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003118702A JP4070659B2 (ja) 2003-04-23 2003-04-23 電界効果トランジスタの製造方法

Publications (3)

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JP2004327615A JP2004327615A (ja) 2004-11-18
JP2004327615A5 JP2004327615A5 (https=) 2005-11-04
JP4070659B2 true JP4070659B2 (ja) 2008-04-02

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JP2003118702A Expired - Fee Related JP4070659B2 (ja) 2003-04-23 2003-04-23 電界効果トランジスタの製造方法

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI119714B (fi) 2005-06-16 2009-02-13 Imbera Electronics Oy Piirilevyrakenne ja menetelmä piirilevyrakenteen valmistamiseksi
WO2007129832A1 (en) * 2006-05-04 2007-11-15 Lg Chem, Ltd. Composition for forming gate insulating layer of organic thin-film transistor and organic thin film transistor using the same
JP5347377B2 (ja) 2007-08-31 2013-11-20 大日本印刷株式会社 縦型有機トランジスタ、その製造方法及び発光素子
US9276134B2 (en) * 2014-01-10 2016-03-01 Micron Technology, Inc. Field effect transistor constructions and memory arrays
CN116230764B (zh) * 2022-03-30 2024-03-15 北京超弦存储器研究院 场效应管、存储器及其制备方法

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JP2004327615A (ja) 2004-11-18

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