JP2004327615A5 - - Google Patents

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Publication number
JP2004327615A5
JP2004327615A5 JP2003118702A JP2003118702A JP2004327615A5 JP 2004327615 A5 JP2004327615 A5 JP 2004327615A5 JP 2003118702 A JP2003118702 A JP 2003118702A JP 2003118702 A JP2003118702 A JP 2003118702A JP 2004327615 A5 JP2004327615 A5 JP 2004327615A5
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JP
Japan
Prior art keywords
electrode
layer
forming
insulating layer
field effect
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Granted
Application number
JP2003118702A
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English (en)
Japanese (ja)
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JP4070659B2 (ja
JP2004327615A (ja
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Priority to JP2003118702A priority Critical patent/JP4070659B2/ja
Priority claimed from JP2003118702A external-priority patent/JP4070659B2/ja
Publication of JP2004327615A publication Critical patent/JP2004327615A/ja
Publication of JP2004327615A5 publication Critical patent/JP2004327615A5/ja
Application granted granted Critical
Publication of JP4070659B2 publication Critical patent/JP4070659B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003118702A 2003-04-23 2003-04-23 電界効果トランジスタの製造方法 Expired - Fee Related JP4070659B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003118702A JP4070659B2 (ja) 2003-04-23 2003-04-23 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003118702A JP4070659B2 (ja) 2003-04-23 2003-04-23 電界効果トランジスタの製造方法

Publications (3)

Publication Number Publication Date
JP2004327615A JP2004327615A (ja) 2004-11-18
JP2004327615A5 true JP2004327615A5 (cg-RX-API-DMAC7.html) 2005-11-04
JP4070659B2 JP4070659B2 (ja) 2008-04-02

Family

ID=33498178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003118702A Expired - Fee Related JP4070659B2 (ja) 2003-04-23 2003-04-23 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JP4070659B2 (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI119714B (fi) 2005-06-16 2009-02-13 Imbera Electronics Oy Piirilevyrakenne ja menetelmä piirilevyrakenteen valmistamiseksi
WO2007129832A1 (en) * 2006-05-04 2007-11-15 Lg Chem, Ltd. Composition for forming gate insulating layer of organic thin-film transistor and organic thin film transistor using the same
JP5347377B2 (ja) 2007-08-31 2013-11-20 大日本印刷株式会社 縦型有機トランジスタ、その製造方法及び発光素子
US9276134B2 (en) * 2014-01-10 2016-03-01 Micron Technology, Inc. Field effect transistor constructions and memory arrays
CN116230764B (zh) * 2022-03-30 2024-03-15 北京超弦存储器研究院 场效应管、存储器及其制备方法

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