JP2004315361A - 酸化亜鉛単結晶 - Google Patents
酸化亜鉛単結晶 Download PDFInfo
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- JP2004315361A JP2004315361A JP2004109729A JP2004109729A JP2004315361A JP 2004315361 A JP2004315361 A JP 2004315361A JP 2004109729 A JP2004109729 A JP 2004109729A JP 2004109729 A JP2004109729 A JP 2004109729A JP 2004315361 A JP2004315361 A JP 2004315361A
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- single crystal
- crystal
- zno
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- zinc oxide
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 237
- 239000013078 crystal Substances 0.000 title claims abstract description 195
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 114
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 239000011701 zinc Substances 0.000 claims abstract description 19
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 18
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 13
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000002834 transmittance Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 abstract description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 31
- 239000002994 raw material Substances 0.000 description 28
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 16
- 238000011049 filling Methods 0.000 description 15
- 239000002904 solvent Substances 0.000 description 15
- 239000012535 impurity Substances 0.000 description 14
- 229910052697 platinum Inorganic materials 0.000 description 10
- 238000004090 dissolution Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000002244 precipitate Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 229910021654 trace metal Inorganic materials 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000005304 joining Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 239000013081 microcrystal Substances 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000012153 distilled water Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000005515 acousto electric effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004109729A JP2004315361A (ja) | 2003-04-03 | 2004-04-02 | 酸化亜鉛単結晶 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003100861 | 2003-04-03 | ||
| JP2004109729A JP2004315361A (ja) | 2003-04-03 | 2004-04-02 | 酸化亜鉛単結晶 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004315361A true JP2004315361A (ja) | 2004-11-11 |
| JP2004315361A5 JP2004315361A5 (https=) | 2005-12-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004109729A Pending JP2004315361A (ja) | 2003-04-03 | 2004-04-02 | 酸化亜鉛単結晶 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004315361A (https=) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005114256A1 (ja) * | 2004-05-24 | 2005-12-01 | Fukuda X'tal Laboratory | 超高速シンチレータとしてのＺｎＯ単結晶およびその製造方法 |
| JP2006124268A (ja) * | 2004-10-01 | 2006-05-18 | Tokyo Denpa Co Ltd | 六方晶系ウルツ鉱型単結晶、その製造方法、および六方晶系ウルツ鉱型単結晶基板 |
| JP2006225213A (ja) * | 2005-02-21 | 2006-08-31 | Tosoh Corp | 酸化亜鉛単結晶、それより得られるエピタキシャル成長用基板およびそれらの製造方法 |
| JP2007001787A (ja) * | 2005-06-21 | 2007-01-11 | Stanley Electric Co Ltd | ＺｎＯ基板の製造方法 |
| JP2007039321A (ja) * | 2005-07-01 | 2007-02-15 | Mitsubishi Chemicals Corp | 超臨界溶媒を用いた結晶製造方法、結晶成長装置、結晶およびデバイス |
| JP2008251569A (ja) * | 2007-03-29 | 2008-10-16 | Stanley Electric Co Ltd | 半導体装置とその製造方法、及びテンプレート基板 |
| CN100580155C (zh) * | 2006-12-11 | 2010-01-13 | 中国科学院上海硅酸盐研究所 | 一种化学气相传输方法生长氧化锌晶体的方法 |
| JP2012158481A (ja) * | 2011-01-29 | 2012-08-23 | Soraa Inc | アンモノサーマル法によるガリウムナイトライドボウルの大規模製造設備および製造方法 |
| JP2015157754A (ja) * | 2015-04-15 | 2015-09-03 | 住友化学株式会社 | サファイア単結晶製造用αアルミナ焼結体 |
| US9816198B2 (en) | 2012-03-13 | 2017-11-14 | Ngk Insulators, Ltd. | Method for producing zinc oxide single crystal |
| US10156024B2 (en) | 2013-05-31 | 2018-12-18 | Ngk Insulators, Ltd. | Zinc oxide free-standing substrate and method for manufacturing same |
-
2004
- 2004-04-02 JP JP2004109729A patent/JP2004315361A/ja active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005114256A1 (ja) * | 2004-05-24 | 2005-12-01 | Fukuda X'tal Laboratory | 超高速シンチレータとしてのＺｎＯ単結晶およびその製造方法 |
| JPWO2005114256A1 (ja) * | 2004-05-24 | 2008-03-27 | 株式会社福田結晶技術研究所 | 超高速シンチレータとしてのＺｎＯ単結晶およびその製造方法 |
| JP2006124268A (ja) * | 2004-10-01 | 2006-05-18 | Tokyo Denpa Co Ltd | 六方晶系ウルツ鉱型単結晶、その製造方法、および六方晶系ウルツ鉱型単結晶基板 |
| JP2006225213A (ja) * | 2005-02-21 | 2006-08-31 | Tosoh Corp | 酸化亜鉛単結晶、それより得られるエピタキシャル成長用基板およびそれらの製造方法 |
| JP2007001787A (ja) * | 2005-06-21 | 2007-01-11 | Stanley Electric Co Ltd | ＺｎＯ基板の製造方法 |
| JP2007039321A (ja) * | 2005-07-01 | 2007-02-15 | Mitsubishi Chemicals Corp | 超臨界溶媒を用いた結晶製造方法、結晶成長装置、結晶およびデバイス |
| CN100580155C (zh) * | 2006-12-11 | 2010-01-13 | 中国科学院上海硅酸盐研究所 | 一种化学气相传输方法生长氧化锌晶体的方法 |
| JP2008251569A (ja) * | 2007-03-29 | 2008-10-16 | Stanley Electric Co Ltd | 半導体装置とその製造方法、及びテンプレート基板 |
| JP2012158481A (ja) * | 2011-01-29 | 2012-08-23 | Soraa Inc | アンモノサーマル法によるガリウムナイトライドボウルの大規模製造設備および製造方法 |
| US9816198B2 (en) | 2012-03-13 | 2017-11-14 | Ngk Insulators, Ltd. | Method for producing zinc oxide single crystal |
| US10156024B2 (en) | 2013-05-31 | 2018-12-18 | Ngk Insulators, Ltd. | Zinc oxide free-standing substrate and method for manufacturing same |
| JP2015157754A (ja) * | 2015-04-15 | 2015-09-03 | 住友化学株式会社 | サファイア単結晶製造用αアルミナ焼結体 |
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