JP2004304153A - 半導体装置及びその製造方法、回路基板並びに電子機器 - Google Patents
半導体装置及びその製造方法、回路基板並びに電子機器 Download PDFInfo
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Abstract
【解決手段】 集積回路に電気的に接続したパッド16を含む半導体基板10に、パッド16と電気的に接続する配線層20を形成する。配線層20を覆うように樹脂層22を形成する。樹脂層22の配線層20とオーバーラップする領域に、第1の方法によって凹部を形成する。凹部を有する樹脂層22を硬化させる。第1の方法とは異なる第2の方法によって、凹部の底部を除去して、樹脂層22に貫通穴24を形成する。配線層20の貫通穴24からの露出部上に外部端子を設ける。
【選択図】図4
Description
(b)前記配線層を覆うように樹脂層を形成すること、
(c)前記樹脂層の前記配線層とオーバーラップする領域に、第1の方法によって凹部を形成すること、
(d)前記凹部を有する前記樹脂層を硬化させること、
(e)前記第1の方法とは異なる第2の方法によって、前記凹部の底部を除去して、前記樹脂層に貫通穴を形成すること、及び、
(f)前記配線層の前記貫通穴からの露出部上に外部端子を設けること、
を含む。本発明によれば、樹脂層を硬化させるときに、樹脂層には凹部が形成されてはいるが、配線層が露出していないので、配線層の不活性化を防止することができる。
(2)この半導体装置の製造方法において、
前記(b)工程で、前記樹脂層を、熱硬化性樹脂前駆体によって形成し、
前記(d)工程で、前記熱硬化性樹脂前駆体を加熱してもよい。
(3)この半導体装置の製造方法において、
前記(b)工程で、前記樹脂層を、放射線に感応する樹脂前駆体によって形成し、
前記第1の方法は、前記樹脂前駆体への前記放射線の照射及び現像を含んでもよい。
(4)この半導体装置の製造方法において、
前記第2の方法は、ドライエッチングであってもよい。
(5)この半導体装置の製造方法において、
前記樹脂層を、ソルダレジストから形成してもよい。
(6)本発明に係る半導体装置は、上記方法によって製造されてなる。
(7)本発明に係る回路基板は、上記半導体装置が実装されてなる。
(8)本発明に係る電子機器は、上記半導体装置を有する。
図1〜図5及び図13〜図16は、本発明の第1の実施の形態に係る半導体装置の製造方法を説明する図である。本実施の形態では、図1に示すように半導体基板10を使用する。半導体基板10には、集積回路12が形成されている。半導体基板10を複数の半導体チップに切り出す場合、半導体基板10には、複数の集積回路12が形成され、個々の半導体チップが個々の集積回路12を有することになる。
図8は、本発明の第2の実施の形態に係る半導体装置の製造方法を示す図である。本実施の形態では、配線層20に形成する凹部36の形状が、第1の実施の形態の凹部26と異なる。凹部36は、その開口幅よりも深さ方向に進んだ位置での幅が大きくなるように形成されてなる。凹部36は、その開口幅よりも深さ方向に進んだ第1の位置での第1の幅が大きくなり、第1の幅よりもさらに深さ方向に進んだ第2の位置での第2の幅が小さくなるように形成されてなる。配線層20を等方的にエッチングすると、この形状の凹部36が得られる。例えば、樹脂層22に貫通穴24を形成した後に、ウエットエッチングによって凹部36を形成してもよい。それ以外の内容は、第1の実施の形態で説明した内容が該当する。
Claims (8)
- (a)集積回路が形成されており、前記集積回路に電気的に接続したパッドを含む半導体基板に、前記パッドと電気的に接続する配線層を形成すること、
(b)前記配線層を覆うように樹脂層を形成すること、
(c)前記樹脂層の前記配線層とオーバーラップする領域に、第1の方法によって凹部を形成すること、
(d)前記凹部を有する前記樹脂層を硬化させること、
(e)前記第1の方法とは異なる第2の方法によって、前記凹部の底部を除去して、前記樹脂層に貫通穴を形成すること、及び、
(f)前記配線層の前記貫通穴からの露出部上に外部端子を設けること、
を含む半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記(b)工程で、前記樹脂層を、熱硬化性樹脂前駆体によって形成し、
前記(d)工程で、前記熱硬化性樹脂前駆体を加熱する半導体装置の製造方法。 - 請求項1又は請求項2記載の半導体装置の製造方法において、
前記(b)工程で、前記樹脂層を、放射線に感応する樹脂前駆体によって形成し、
前記第1の方法は、前記樹脂前駆体への前記放射線の照射及び現像を含む半導体装置の製造方法。 - 請求項1から請求項3のいずれかに記載の半導体装置の製造方法において、
前記第2の方法は、ドライエッチングである半導体装置の製造方法。 - 請求項1から請求項4のいずれかに記載の半導体装置の製造方法において、
前記樹脂層を、ソルダレジストから形成する半導体装置の製造方法。 - 請求項1から請求項5のいずれかに記載の方法によって製造されてなる半導体装置。
- 請求項6記載の半導体装置が実装された回路基板。
- 請求項6記載の半導体装置を有する電子機器。
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JP2003385421A JP3918941B2 (ja) | 2003-03-20 | 2003-11-14 | 半導体装置の製造方法 |
CNB2004100284438A CN1301541C (zh) | 2003-03-20 | 2004-03-11 | 半导体装置的制造方法 |
US10/801,110 US6894394B2 (en) | 2003-03-20 | 2004-03-15 | Semiconductor device, circuit board, electronic apparatus, and method for manufacturing semiconductor device |
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JP2008277569A (ja) * | 2007-04-27 | 2008-11-13 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
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JP3972211B2 (ja) * | 2004-09-03 | 2007-09-05 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
US9728517B2 (en) * | 2013-12-17 | 2017-08-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and manufacturing method thereof |
CN113891200A (zh) * | 2021-09-24 | 2022-01-04 | 青岛歌尔智能传感器有限公司 | 一种麦克风的封装结构 |
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US5677566A (en) * | 1995-05-08 | 1997-10-14 | Micron Technology, Inc. | Semiconductor chip package |
TW448524B (en) | 1997-01-17 | 2001-08-01 | Seiko Epson Corp | Electronic component, semiconductor device, manufacturing method therefor, circuit board and electronic equipment |
WO1999036957A1 (fr) * | 1998-01-19 | 1999-07-22 | Citizen Watch Co., Ltd. | Boitier de semiconducteur |
JPH11297873A (ja) | 1998-04-13 | 1999-10-29 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JPH11340277A (ja) * | 1998-05-22 | 1999-12-10 | Nec Corp | 半導体チップ搭載基板、半導体装置及び前記半導体チップ搭載基板への半導体チップ搭載方法 |
WO2000055898A1 (fr) | 1999-03-16 | 2000-09-21 | Seiko Epson Corporation | Dispositif a semi-conducteur, son procede de fabrication, carte de circuit et dispositif electronique |
US6707153B2 (en) | 2000-03-23 | 2004-03-16 | Seiko Epson Corporation | Semiconductor chip with plural resin layers on a surface thereof and method of manufacturing same |
JP3886712B2 (ja) * | 2000-09-08 | 2007-02-28 | シャープ株式会社 | 半導体装置の製造方法 |
JP2003209137A (ja) | 2002-01-17 | 2003-07-25 | Seiko Epson Corp | 実装構造基板及びその製造方法並びに電子機器 |
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JP3918941B2 (ja) | 2007-05-23 |
US20040245625A1 (en) | 2004-12-09 |
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