JP2004245841A - Ｔｅｍｆｉｂ試料およびその製造のための方法 - Google Patents

Ｔｅｍｆｉｂ試料およびその製造のための方法 Download PDF

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Publication number
JP2004245841A
JP2004245841A JP2004035289A JP2004035289A JP2004245841A JP 2004245841 A JP2004245841 A JP 2004245841A JP 2004035289 A JP2004035289 A JP 2004035289A JP 2004035289 A JP2004035289 A JP 2004035289A JP 2004245841 A JP2004245841 A JP 2004245841A
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JP
Japan
Prior art keywords
sample
tem
fib
sample according
fib sample
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Pending
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JP2004035289A
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English (en)
Japanese (ja)
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JP2004245841A5 (enExample
Inventor
Wolfgang Grunewald
ボルフガング・グリューネバルト
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Bal Tec AG
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Bal Tec AG
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Publication date
Application filed by Bal Tec AG filed Critical Bal Tec AG
Publication of JP2004245841A publication Critical patent/JP2004245841A/ja
Publication of JP2004245841A5 publication Critical patent/JP2004245841A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Sampling And Sample Adjustment (AREA)
JP2004035289A 2003-02-15 2004-02-12 Ｔｅｍｆｉｂ試料およびその製造のための方法 Pending JP2004245841A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH2252003 2003-02-15

Publications (2)

Publication Number Publication Date
JP2004245841A true JP2004245841A (ja) 2004-09-02
JP2004245841A5 JP2004245841A5 (enExample) 2006-11-09

Family

ID=32661009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004035289A Pending JP2004245841A (ja) 2003-02-15 2004-02-12 Ｔｅｍｆｉｂ試料およびその製造のための方法

Country Status (3)

Country Link
US (1) US7002152B2 (enExample)
EP (1) EP1447656A1 (enExample)
JP (1) JP2004245841A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006098189A (ja) * 2004-09-29 2006-04-13 Jeol Ltd 試料作製方法および試料作製装置
JP2010507781A (ja) * 2006-10-20 2010-03-11 エフ・イ−・アイ・カンパニー Ｓ／ｔｅｍのサンプルを作成する方法およびサンプル構造
JP2012193962A (ja) * 2011-03-15 2012-10-11 Jeol Ltd 薄膜試料作製方法
JP2014202756A (ja) * 2013-04-04 2014-10-27 フラウンホーファー−ゲゼルシャフト ツール フエルデルング デア アンゲヴァンテン フォルシュング エー．ファオ． 微小構造材診断用サンプルの製造方法および製造用構造体とそのサンプル
CN104913957A (zh) * 2015-05-04 2015-09-16 中国石油化工股份有限公司 Tem原位观察材料基体/钝化膜界面结构的样品制备方法

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8058142B2 (en) 1996-11-04 2011-11-15 Besang Inc. Bonded semiconductor structure and method of making the same
JP4335497B2 (ja) * 2002-07-12 2009-09-30 エスアイアイ・ナノテクノロジー株式会社 イオンビーム装置およびイオンビーム加工方法
US7799675B2 (en) * 2003-06-24 2010-09-21 Sang-Yun Lee Bonded semiconductor structure and method of fabricating the same
US7632738B2 (en) * 2003-06-24 2009-12-15 Sang-Yun Lee Wafer bonding method
US20100190334A1 (en) * 2003-06-24 2010-07-29 Sang-Yun Lee Three-dimensional semiconductor structure and method of manufacturing the same
TW200500599A (en) * 2003-06-24 2005-01-01 Au Optronics Corp OLED electron microscope test specimen and its manufacturing method
US8071438B2 (en) 2003-06-24 2011-12-06 Besang Inc. Semiconductor circuit
US8471263B2 (en) 2003-06-24 2013-06-25 Sang-Yun Lee Information storage system which includes a bonded semiconductor structure
US7863748B2 (en) * 2003-06-24 2011-01-04 Oh Choonsik Semiconductor circuit and method of fabricating the same
US7867822B2 (en) 2003-06-24 2011-01-11 Sang-Yun Lee Semiconductor memory device
US20060219919A1 (en) * 2003-11-11 2006-10-05 Moore Thomas M TEM sample holder and method of forming same
US7297965B2 (en) * 2004-07-14 2007-11-20 Applied Materials, Israel, Ltd. Method and apparatus for sample formation and microanalysis in a vacuum chamber
US8367524B2 (en) * 2005-03-29 2013-02-05 Sang-Yun Lee Three-dimensional integrated circuit structure
US8455978B2 (en) 2010-05-27 2013-06-04 Sang-Yun Lee Semiconductor circuit structure and method of making the same
EP2095134B1 (en) 2006-10-20 2017-02-22 FEI Company Method and apparatus for sample extraction and handling
EP2132550B1 (de) * 2007-03-06 2012-11-07 Leica Mikrosysteme GmbH Verfahren zur herstellung einer probe für die elektronenmikroskopie
EP2151848A1 (en) 2008-08-07 2010-02-10 FEI Company Method of machining a work piece with a focused particle beam
DE102009008166A1 (de) 2009-02-10 2010-09-02 Carl Zeiss Nts Gmbh Verfahren zur Abscheidung von Schutzstrukturen
US8723335B2 (en) 2010-05-20 2014-05-13 Sang-Yun Lee Semiconductor circuit structure and method of forming the same using a capping layer
DE102010032894B4 (de) 2010-07-30 2013-08-22 Carl Zeiss Microscopy Gmbh Tem-Lamelle, Verfahren zu ihrer Herstellung und Vorrichtung zum Ausführen des Verfahrens
DE102010064462B3 (de) 2010-07-30 2024-07-11 Carl Zeiss Microscopy Gmbh TEM-Lamelle
US8624185B2 (en) * 2010-09-17 2014-01-07 Carl Zeiss Microscopy, Llc Sample preparation
US9733164B2 (en) * 2012-06-11 2017-08-15 Fei Company Lamella creation method and device using fixed-angle beam and rotating sample stage
US9360401B2 (en) * 2014-09-24 2016-06-07 Inotera Memories, Inc. Sample stack structure and method for preparing the same
WO2016067039A1 (en) * 2014-10-29 2016-05-06 Omniprobe, Inc Rapid tem sample preparation method with backside fib milling
CN113804521B (zh) * 2020-06-16 2022-12-13 中国科学院上海硅酸盐研究所 一种用于超薄样品制备的样品台
CN113899764A (zh) * 2021-09-27 2022-01-07 中国科学院广州地球化学研究所 一种基于离子减薄的电子显微三维重构地质样品制样方法
CN114923753B (zh) * 2022-05-25 2025-07-15 江苏第三代半导体研究院有限公司 用于电子显微镜的样品的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4128765A (en) * 1976-10-29 1978-12-05 Joseph Franks Ion beam machining techniques and apparatus
US5009743A (en) * 1989-11-06 1991-04-23 Gatan Incorporated Chemically-assisted ion beam milling system for the preparation of transmission electron microscope specimens
US5472566A (en) * 1994-11-14 1995-12-05 Gatan, Inc. Specimen holder and apparatus for two-sided ion milling system
DE29507225U1 (de) * 1995-04-29 1995-07-13 Grünewald, Wolfgang, Dr.rer.nat., 09122 Chemnitz Ionenstrahlpräparationsvorrichtung für die Elektronenmikroskopie
DE59605446D1 (de) * 1995-07-25 2000-07-20 Nmi Univ Tuebingen Verfahren und vorrichtung zur ionendünnung in einem hochauflösenden transmissionselektronenmikroskop
US6039000A (en) * 1998-02-11 2000-03-21 Micrion Corporation Focused particle beam systems and methods using a tilt column
US6194720B1 (en) * 1998-06-24 2001-02-27 Micron Technology, Inc. Preparation of transmission electron microscope samples
US6768110B2 (en) * 2000-06-21 2004-07-27 Gatan, Inc. Ion beam milling system and method for electron microscopy specimen preparation

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006098189A (ja) * 2004-09-29 2006-04-13 Jeol Ltd 試料作製方法および試料作製装置
JP2010507781A (ja) * 2006-10-20 2010-03-11 エフ・イ−・アイ・カンパニー Ｓ／ｔｅｍのサンプルを作成する方法およびサンプル構造
JP2012193962A (ja) * 2011-03-15 2012-10-11 Jeol Ltd 薄膜試料作製方法
JP2014202756A (ja) * 2013-04-04 2014-10-27 フラウンホーファー−ゲゼルシャフト ツール フエルデルング デア アンゲヴァンテン フォルシュング エー．ファオ． 微小構造材診断用サンプルの製造方法および製造用構造体とそのサンプル
CN104913957A (zh) * 2015-05-04 2015-09-16 中国石油化工股份有限公司 Tem原位观察材料基体/钝化膜界面结构的样品制备方法

Also Published As

Publication number Publication date
US20040164242A1 (en) 2004-08-26
EP1447656A1 (de) 2004-08-18
US7002152B2 (en) 2006-02-21

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