JP2004245841A5 - - Google Patents

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Publication number
JP2004245841A5
JP2004245841A5 JP2004035289A JP2004035289A JP2004245841A5 JP 2004245841 A5 JP2004245841 A5 JP 2004245841A5 JP 2004035289 A JP2004035289 A JP 2004035289A JP 2004035289 A JP2004035289 A JP 2004035289A JP 2004245841 A5 JP2004245841 A5 JP 2004245841A5
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JP
Japan
Prior art keywords
sample
tem
fib
production
sample according
Prior art date
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Pending
Application number
JP2004035289A
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English (en)
Japanese (ja)
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JP2004245841A (ja
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Publication of JP2004245841A publication Critical patent/JP2004245841A/ja
Publication of JP2004245841A5 publication Critical patent/JP2004245841A5/ja
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JP2004035289A 2003-02-15 2004-02-12 Ｔｅｍｆｉｂ試料およびその製造のための方法 Pending JP2004245841A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH2252003 2003-02-15

Publications (2)

Publication Number Publication Date
JP2004245841A JP2004245841A (ja) 2004-09-02
JP2004245841A5 true JP2004245841A5 (enExample) 2006-11-09

Family

ID=32661009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004035289A Pending JP2004245841A (ja) 2003-02-15 2004-02-12 Ｔｅｍｆｉｂ試料およびその製造のための方法

Country Status (3)

Country Link
US (1) US7002152B2 (enExample)
EP (1) EP1447656A1 (enExample)
JP (1) JP2004245841A (enExample)

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US8058142B2 (en) 1996-11-04 2011-11-15 Besang Inc. Bonded semiconductor structure and method of making the same
JP4335497B2 (ja) * 2002-07-12 2009-09-30 エスアイアイ・ナノテクノロジー株式会社 イオンビーム装置およびイオンビーム加工方法
US7799675B2 (en) * 2003-06-24 2010-09-21 Sang-Yun Lee Bonded semiconductor structure and method of fabricating the same
US7632738B2 (en) * 2003-06-24 2009-12-15 Sang-Yun Lee Wafer bonding method
US20100190334A1 (en) * 2003-06-24 2010-07-29 Sang-Yun Lee Three-dimensional semiconductor structure and method of manufacturing the same
TW200500599A (en) * 2003-06-24 2005-01-01 Au Optronics Corp OLED electron microscope test specimen and its manufacturing method
US8071438B2 (en) 2003-06-24 2011-12-06 Besang Inc. Semiconductor circuit
US8471263B2 (en) 2003-06-24 2013-06-25 Sang-Yun Lee Information storage system which includes a bonded semiconductor structure
US7863748B2 (en) * 2003-06-24 2011-01-04 Oh Choonsik Semiconductor circuit and method of fabricating the same
US7867822B2 (en) 2003-06-24 2011-01-11 Sang-Yun Lee Semiconductor memory device
US20060219919A1 (en) * 2003-11-11 2006-10-05 Moore Thomas M TEM sample holder and method of forming same
US7297965B2 (en) * 2004-07-14 2007-11-20 Applied Materials, Israel, Ltd. Method and apparatus for sample formation and microanalysis in a vacuum chamber
JP4486462B2 (ja) * 2004-09-29 2010-06-23 日本電子株式会社 試料作製方法および試料作製装置
US8367524B2 (en) * 2005-03-29 2013-02-05 Sang-Yun Lee Three-dimensional integrated circuit structure
US8455978B2 (en) 2010-05-27 2013-06-04 Sang-Yun Lee Semiconductor circuit structure and method of making the same
EP2095134B1 (en) 2006-10-20 2017-02-22 FEI Company Method and apparatus for sample extraction and handling
JP5959139B2 (ja) 2006-10-20 2016-08-02 エフ・イ−・アイ・カンパニー Ｓ／ｔｅｍのサンプルを分析する方法
EP2132550B1 (de) * 2007-03-06 2012-11-07 Leica Mikrosysteme GmbH Verfahren zur herstellung einer probe für die elektronenmikroskopie
EP2151848A1 (en) 2008-08-07 2010-02-10 FEI Company Method of machining a work piece with a focused particle beam
DE102009008166A1 (de) 2009-02-10 2010-09-02 Carl Zeiss Nts Gmbh Verfahren zur Abscheidung von Schutzstrukturen
US8723335B2 (en) 2010-05-20 2014-05-13 Sang-Yun Lee Semiconductor circuit structure and method of forming the same using a capping layer
DE102010032894B4 (de) 2010-07-30 2013-08-22 Carl Zeiss Microscopy Gmbh Tem-Lamelle, Verfahren zu ihrer Herstellung und Vorrichtung zum Ausführen des Verfahrens
DE102010064462B3 (de) 2010-07-30 2024-07-11 Carl Zeiss Microscopy Gmbh TEM-Lamelle
US8624185B2 (en) * 2010-09-17 2014-01-07 Carl Zeiss Microscopy, Llc Sample preparation
JP5657435B2 (ja) * 2011-03-15 2015-01-21 日本電子株式会社 薄膜試料作製方法
US9733164B2 (en) * 2012-06-11 2017-08-15 Fei Company Lamella creation method and device using fixed-angle beam and rotating sample stage
EP2787338B1 (en) * 2013-04-04 2021-10-06 FRAUNHOFER-GESELLSCHAFT zur Förderung der angewandten Forschung e.V. Method and arrangement for manufacturing a sample for microstructural materials diagnostics and corresponding sample
US9360401B2 (en) * 2014-09-24 2016-06-07 Inotera Memories, Inc. Sample stack structure and method for preparing the same
WO2016067039A1 (en) * 2014-10-29 2016-05-06 Omniprobe, Inc Rapid tem sample preparation method with backside fib milling
CN104913957B (zh) * 2015-05-04 2019-07-19 中国石油化工股份有限公司 Tem原位观察材料基体/钝化膜界面结构的样品制备方法
CN113804521B (zh) * 2020-06-16 2022-12-13 中国科学院上海硅酸盐研究所 一种用于超薄样品制备的样品台
CN113899764A (zh) * 2021-09-27 2022-01-07 中国科学院广州地球化学研究所 一种基于离子减薄的电子显微三维重构地质样品制样方法
CN114923753B (zh) * 2022-05-25 2025-07-15 江苏第三代半导体研究院有限公司 用于电子显微镜的样品的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4128765A (en) * 1976-10-29 1978-12-05 Joseph Franks Ion beam machining techniques and apparatus
US5009743A (en) * 1989-11-06 1991-04-23 Gatan Incorporated Chemically-assisted ion beam milling system for the preparation of transmission electron microscope specimens
US5472566A (en) * 1994-11-14 1995-12-05 Gatan, Inc. Specimen holder and apparatus for two-sided ion milling system
DE29507225U1 (de) * 1995-04-29 1995-07-13 Grünewald, Wolfgang, Dr.rer.nat., 09122 Chemnitz Ionenstrahlpräparationsvorrichtung für die Elektronenmikroskopie
DE59605446D1 (de) * 1995-07-25 2000-07-20 Nmi Univ Tuebingen Verfahren und vorrichtung zur ionendünnung in einem hochauflösenden transmissionselektronenmikroskop
US6039000A (en) * 1998-02-11 2000-03-21 Micrion Corporation Focused particle beam systems and methods using a tilt column
US6194720B1 (en) * 1998-06-24 2001-02-27 Micron Technology, Inc. Preparation of transmission electron microscope samples
US6768110B2 (en) * 2000-06-21 2004-07-27 Gatan, Inc. Ion beam milling system and method for electron microscopy specimen preparation

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