JP2004235617A - 半導体パッケージおよびその製造方法 - Google Patents
半導体パッケージおよびその製造方法 Download PDFInfo
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- JP2004235617A JP2004235617A JP2003421713A JP2003421713A JP2004235617A JP 2004235617 A JP2004235617 A JP 2004235617A JP 2003421713 A JP2003421713 A JP 2003421713A JP 2003421713 A JP2003421713 A JP 2003421713A JP 2004235617 A JP2004235617 A JP 2004235617A
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Abstract
【解決手段】半導体パッケージングの標準製造プロセス工程を用い、熱放散および電磁妨害シールドを最適化する電子デバイス・キャリアの最適化されたリッド実装を開示する。本発明によれば、導電性ブロックまたはスプリングは、これらの下面で、チップ・キャリアのグラウンド・パッドにハンダ付けされる。他の面で、これらの導電性ブロックまたはスプリングは、シリコーン・ベースの材料のような導電性接着剤を用いてリッドに電気的に接続される。さらに、リッドは、電気絶縁性接着剤で半導体チップに熱的に接続される。
【選択図】図4
Description
前記少なくとも1つのチップ・キャリア・グラウンド・パッドに第1の電気伝導性接着剤を付与する工程と、
前記電気伝導性接着剤に接触して少なくとも1つの導電性ブロックをピック・アンド・プレイスする工程と、
前記チップ・キャリアの上に少なくとも1つの半導体チップをピック・アンド・プレイスする工程と、
前記少なくとも1つの導電性ブロックに第2の電気伝導性接着剤を付与する工程と、
前記少なくとも1つの半導体チップに電気絶縁性接着剤を付与する工程と、
前記第2の電気伝導性接着剤および前記電気絶縁性接着剤に接触して導電性リッドを配置する工程と、
を含む方法によって行われる。
(1)一方の面に少なくとも1つのグラウンド・パッドを有するチップ・キャリアと、前記チップ・キャリアの前記一方の面に接続される少なくとも1つの半導体チップと、前記少なくとも1つの半導体チップに熱的に接続される導電性リッドと、少なくとも1つの導電性ブロックとを備え、前記少なくとも1つの導電性ブロックは、前記少なくとも1つのグラウンド・パッドおよび前記導電性リッドに電気的に接続される半導体パッケージ。
(2)前記少なくとも1つの導電性ブロックは、前記少なくとも1つのグラウンド・パッドにハンダ付けされている上記(1)に記載の半導体パッケージ。
(3)前記少なくとも1つの導電性ブロックは、電気伝導性接着剤で前記少なくとも1つのグラウンド・パッドに電気的に接続される上記(1)または(2)に記載の半導体パッケージ。
(4)前記少なくとも1つの導電性ブロックは、電気伝導性接着剤で前記導電性リッドに電気的に接続される上記(1)〜(3)のいずれかに記載の半導体パッケージ。
(5)前記少なくとも1つの導電性ブロックは、電気絶縁性接着剤を用いて前記チップ・キャリアに更に結合される上記(1)〜(4)のいずれかに記載の半導体パッケージ。
(6)前記少なくとも1つの導電性ブロックは、最適化された熱伝導性接着剤を用いて前記チップ・キャリアに更に結合される上記(1)〜(5)のいずれかに記載の半導体パッケージ。
(7)前記少なくとも1つの導電性ブロックは、導電性スプリングである上記(1)〜(6)のいずれかに記載の半導体パッケージ。
(8)前記少なくとも1つの導電性ブロックは、SMT個別部品である上記(1)〜(6)のいずれかに記載の半導体パッケージ。
(9)少なくとも1つのグラウンド・パッドを有するチップ・キャリアを備える半導体パッケージの製造方法であって、
前記少なくとも1つのチップ・キャリア・グラウンド・パッドに第1の電気伝導性接着剤を付与する工程と、
前記電気伝導性接着剤に接触して少なくとも1つの導電性ブロックをピック・アンド・プレイスする工程と、
前記チップ・キャリアの上に少なくとも1つの半導体チップをピック・アンド・プレイスする工程と、
前記少なくとも1つの導電性ブロックに第2の電気伝導性接着剤を付与する工程と、
前記少なくとも1つの半導体チップに電気絶縁性接着剤を付与する工程と、
前記第2の電気伝導性接着剤および前記電気絶縁性接着剤に接触して導電性リッドを配置する工程と、
を含む方法。
(10)前記第1の電気伝導性接着剤は、ハンダを含む上記(9)に記載の方法。
(11)前記少なくとも1つの導電性ブロックは、導電性スプリングまたはSMT個別部品である上記(9)または(10)に記載の方法。
110,220,310 チップ
120,120’ チップ・キャリア
130 C4ハンダ・ボール
150 BGAハンダ・ボール
160,240 リッド
170 熱接着剤
180 ピース
200 集積回路パッケージ
210,300 基板
230 接合パッド
250 突起部
260,440 電気非伝導性接着剤
270,410,610 電気伝導性接着剤
280 熱インターフェース材料
320 基板パッド
330 円
400,400−1,400−2,400−3,400−4 導電性ブロック
420,620 ハンダ
430,630 パッド
600 スプリング
Claims (11)
- 一方の面に少なくとも1つのグラウンド・パッドを有するチップ・キャリアと、前記チップ・キャリアの前記一方の面に接続される少なくとも1つの半導体チップと、前記少なくとも1つの半導体チップに熱的に接続される導電性リッドと、少なくとも1つの導電性ブロックとを備え、前記少なくとも1つの導電性ブロックは、前記少なくとも1つのグラウンド・パッドおよび前記導電性リッドに電気的に接続される半導体パッケージ。
- 前記少なくとも1つの導電性ブロックは、前記少なくとも1つのグラウンド・パッドにハンダ付けされている請求項1に記載の半導体パッケージ。
- 前記少なくとも1つの導電性ブロックは、電気伝導性接着剤で前記少なくとも1つのグラウンド・パッドに電気的に接続される請求項1または2に記載の半導体パッケージ。
- 前記少なくとも1つの導電性ブロックは、電気伝導性接着剤で前記導電性リッドに電気的に接続される請求項1〜3のいずれかに記載の半導体パッケージ。
- 前記少なくとも1つの導電性ブロックは、電気絶縁性接着剤を用いて前記チップ・キャリアに更に結合される請求項1〜4のいずれかに記載の半導体パッケージ。
- 前記少なくとも1つの導電性ブロックは、最適化された熱伝導性接着剤を用いて前記チップ・キャリアに更に結合される請求項1〜5のいずれかに記載の半導体パッケージ。
- 前記少なくとも1つの導電性ブロックは、導電性スプリングである請求項1〜6のいずれかに記載の半導体パッケージ。
- 前記少なくとも1つの導電性ブロックは、SMT個別部品である請求項1〜6のいずれかに記載の半導体パッケージ。
- 少なくとも1つのグラウンド・パッドを有するチップ・キャリアを備える半導体パッケージの製造方法であって、
前記少なくとも1つのチップ・キャリア・グラウンド・パッドに第1の電気伝導性接着剤を付与する工程と、
前記電気伝導性接着剤に接触して少なくとも1つの導電性ブロックをピック・アンド・プレイスする工程と、
前記チップ・キャリアの上に少なくとも1つの半導体チップをピック・アンド・プレイスする工程と、
前記少なくとも1つの導電性ブロックに第2の電気伝導性接着剤を付与する工程と、
前記少なくとも1つの半導体チップに電気絶縁性接着剤を付与する工程と、
前記第2の電気伝導性接着剤および前記電気絶縁性接着剤に接触して導電性リッドを配置する工程と、
を含む方法。 - 前記第1の電気伝導性接着剤は、ハンダを含む請求項9に記載の方法。
- 前記少なくとも1つの導電性ブロックは、導電性スプリングまたはSMT個別部品である請求項9または10に記載の方法。
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-
2003
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- 2003-12-18 JP JP2003421713A patent/JP2004235617A/ja active Pending
- 2003-12-31 KR KR1020030101297A patent/KR100734816B1/ko not_active IP Right Cessation
-
2004
- 2004-01-12 TW TW093100679A patent/TWI273679B/zh not_active IP Right Cessation
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JP2010123839A (ja) * | 2008-11-21 | 2010-06-03 | Sharp Corp | 半導体モジュール |
CN103811472A (zh) * | 2012-11-05 | 2014-05-21 | 三星电子株式会社 | 半导体封装件和制造半导体封装件的方法 |
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US20040150097A1 (en) | 2004-08-05 |
TWI273679B (en) | 2007-02-11 |
KR100734816B1 (ko) | 2007-07-06 |
JP2008072153A (ja) | 2008-03-27 |
JP4805901B2 (ja) | 2011-11-02 |
KR20040069962A (ko) | 2004-08-06 |
TW200428606A (en) | 2004-12-16 |
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