JP2004221501A - 半導体材料及びそれを用いた半導体素子 - Google Patents

半導体材料及びそれを用いた半導体素子 Download PDF

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Publication number
JP2004221501A
JP2004221501A JP2003010189A JP2003010189A JP2004221501A JP 2004221501 A JP2004221501 A JP 2004221501A JP 2003010189 A JP2003010189 A JP 2003010189A JP 2003010189 A JP2003010189 A JP 2003010189A JP 2004221501 A JP2004221501 A JP 2004221501A
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Prior art keywords
layer
contact
semiconductor
contact layer
composition
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JP2003010189A
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Japanese (ja)
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JP2004221501A5 (enExample
Inventor
Satoshi Inoue
聡 井上
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Sumitomo Chemical Co Ltd
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Sumitomo Chemical Co Ltd
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Priority to JP2003010189A priority Critical patent/JP2004221501A/ja
Publication of JP2004221501A publication Critical patent/JP2004221501A/ja
Publication of JP2004221501A5 publication Critical patent/JP2004221501A5/ja
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JP2003010189A 2003-01-17 2003-01-17 半導体材料及びそれを用いた半導体素子 Pending JP2004221501A (ja)

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JP2003010189A JP2004221501A (ja) 2003-01-17 2003-01-17 半導体材料及びそれを用いた半導体素子

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JP2003010189A JP2004221501A (ja) 2003-01-17 2003-01-17 半導体材料及びそれを用いた半導体素子

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JP2004221501A true JP2004221501A (ja) 2004-08-05
JP2004221501A5 JP2004221501A5 (enExample) 2006-01-19

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JP2003010189A Pending JP2004221501A (ja) 2003-01-17 2003-01-17 半導体材料及びそれを用いた半導体素子

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03159135A (ja) * 1989-11-17 1991-07-09 Fujitsu Ltd 半導体装置及びその製造方法
JPH0575095A (ja) * 1991-09-13 1993-03-26 Matsushita Electric Ind Co Ltd ヘテロバイポーラトランジスタ及びその製造方法
JPH06267867A (ja) * 1993-03-15 1994-09-22 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体の結晶成長法およびこれを用いたオーミックコンタクトの形成法
JP2001102389A (ja) * 1999-09-28 2001-04-13 Toshiba Corp ヘテロ接合バイポーラトランジスタ及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03159135A (ja) * 1989-11-17 1991-07-09 Fujitsu Ltd 半導体装置及びその製造方法
JPH0575095A (ja) * 1991-09-13 1993-03-26 Matsushita Electric Ind Co Ltd ヘテロバイポーラトランジスタ及びその製造方法
JPH06267867A (ja) * 1993-03-15 1994-09-22 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体の結晶成長法およびこれを用いたオーミックコンタクトの形成法
JP2001102389A (ja) * 1999-09-28 2001-04-13 Toshiba Corp ヘテロ接合バイポーラトランジスタ及びその製造方法

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