JP2004193617A5 - - Google Patents

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JP2004193617A5
JP2004193617A5 JP2003411387A JP2003411387A JP2004193617A5 JP 2004193617 A5 JP2004193617 A5 JP 2004193617A5 JP 2003411387 A JP2003411387 A JP 2003411387A JP 2003411387 A JP2003411387 A JP 2003411387A JP 2004193617 A5 JP2004193617 A5 JP 2004193617A5
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Japan
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layer
angstroms
ratio
grown
growing
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JP2003411387A
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JP4757441B2 (ja
JP2004193617A (ja
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Priority claimed from US10/317,309 external-priority patent/US6900067B2/en
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Claims (10)

  1. サファイヤの基板を準備する工程と、
    約１０００℃と約１１８０℃の間の温度で、有機金属化学気相成長法により約５００オングストロームと約５０００オングストロームの間の厚さを有するＡｌ1-xＧａxＮ（０≦ｘ＜１）の第１層を前記基板上に直接成長させる工程と（当該第１層を成長させる工程は、前記基板に隣接する前記第１層の第１部分を、ＩＩＩ族前駆体に対するＶ族前駆体の比率が第１の比率になるように成長させる工程を含んでいる）、
    前記第１層の第２部分を成長させながらＩＩＩ族前駆体に対するＶ族前駆体の比率を前記第１の比率から第２の比率まで増加させる工程と、
    前記第１層の上にＩＩＩ族窒化物の第２層を成長させる工程と、
    を含む、発光デバイスを形成する方法。
  2. 前記第１層を約１０６０℃と約１１６０℃の間の温度で成長させる、請求項１に記載の方法。
  3. 前記第１層がＡｌＮである請求項１に記載の方法。
  4. 前記第１層が約１０００オングストロームと約３０００オングストロームの間の厚さを有する請求項１に記載の方法。
  5. 前記ｘが０≦ｘ≦０．５である請求項１に記載の方法。
  6. 前記第２層を前記第１層と同じ温度で成長させる請求項１に記載の方法。
  7. 前記第２層を前記第１層よりも低い温度で成長させる請求項１に記載の方法。
  8. 前記第２層がＧａＮ、ＩｎＧａＮ、ＡｌＧａＮ、及びＡｌＩｎＧａＮのうちの１つである請求項１に記載の方法。
  9. 前記第２層をドープする請求項１に記載の方法。
  10. 前記第２層が約５００オングストロームと約２ミクロンとの間の厚さを有する請求項１に記載の方法。
JP2003411387A 2002-12-11 2003-12-10 通常の低温核生成層なしでのミスマッチした基板上におけるｉｉｉ族窒化物フィルムの成長 Expired - Lifetime JP4757441B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/317309 2002-12-11
US10/317,309 US6900067B2 (en) 2002-12-11 2002-12-11 Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers

Publications (3)

Publication Number Publication Date
JP2004193617A JP2004193617A (ja) 2004-07-08
JP2004193617A5 true JP2004193617A5 (ja) 2007-02-01
JP4757441B2 JP4757441B2 (ja) 2011-08-24

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Family Applications (1)

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JP2003411387A Expired - Lifetime JP4757441B2 (ja) 2002-12-11 2003-12-10 通常の低温核生成層なしでのミスマッチした基板上におけるｉｉｉ族窒化物フィルムの成長

Country Status (4)

Country Link
US (1) US6900067B2 (ja)
EP (1) EP1429374A3 (ja)
JP (1) JP4757441B2 (ja)
TW (1) TWI336958B (ja)

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