JP2004193617A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2004193617A5 JP2004193617A5 JP2003411387A JP2003411387A JP2004193617A5 JP 2004193617 A5 JP2004193617 A5 JP 2004193617A5 JP 2003411387 A JP2003411387 A JP 2003411387A JP 2003411387 A JP2003411387 A JP 2003411387A JP 2004193617 A5 JP2004193617 A5 JP 2004193617A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- angstroms
- ratio
- grown
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Claims (10)
- サファイヤの基板を準備する工程と、
約1000℃と約1180℃の間の温度で、有機金属化学気相成長法により約500オングストロームと約5000オングストロームの間の厚さを有するAl1-xGaxN(0≦x<1)の第1層を前記基板上に直接成長させる工程と(当該第1層を成長させる工程は、前記基板に隣接する前記第1層の第1部分を、III族前駆体に対するV族前駆体の比率が第1の比率になるように成長させる工程を含んでいる)、
前記第1層の第2部分を成長させながらIII族前駆体に対するV族前駆体の比率を前記第1の比率から第2の比率まで増加させる工程と、
前記第1層の上にIII族窒化物の第2層を成長させる工程と、
を含む、発光デバイスを形成する方法。 - 前記第1層を約1060℃と約1160℃の間の温度で成長させる、請求項1に記載の方法。
- 前記第1層がAlNである請求項1に記載の方法。
- 前記第1層が約1000オングストロームと約3000オングストロームの間の厚さを有する請求項1に記載の方法。
- 前記xが0≦x≦0.5である請求項1に記載の方法。
- 前記第2層を前記第1層と同じ温度で成長させる請求項1に記載の方法。
- 前記第2層を前記第1層よりも低い温度で成長させる請求項1に記載の方法。
- 前記第2層がGaN、InGaN、AlGaN、及びAlInGaNのうちの1つである請求項1に記載の方法。
- 前記第2層をドープする請求項1に記載の方法。
- 前記第2層が約500オングストロームと約2ミクロンとの間の厚さを有する請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/317,309 US6900067B2 (en) | 2002-12-11 | 2002-12-11 | Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers |
US10/317309 | 2002-12-11 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004193617A JP2004193617A (ja) | 2004-07-08 |
JP2004193617A5 true JP2004193617A5 (ja) | 2007-02-01 |
JP4757441B2 JP4757441B2 (ja) | 2011-08-24 |
Family
ID=32325931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003411387A Expired - Lifetime JP4757441B2 (ja) | 2002-12-11 | 2003-12-10 | 通常の低温核生成層なしでのミスマッチした基板上におけるiii族窒化物フィルムの成長 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6900067B2 (ja) |
EP (1) | EP1429374A3 (ja) |
JP (1) | JP4757441B2 (ja) |
TW (1) | TWI336958B (ja) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101034055B1 (ko) | 2003-07-18 | 2011-05-12 | 엘지이노텍 주식회사 | 발광 다이오드 및 그 제조방법 |
KR100533636B1 (ko) * | 2003-12-20 | 2005-12-06 | 삼성전기주식회사 | 질화물 반도체 제조방법 및 그에 따라 제조된 질화물반도체구조 |
JP4833537B2 (ja) * | 2004-10-07 | 2011-12-07 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 半導体発光素子 |
US20060160345A1 (en) * | 2005-01-14 | 2006-07-20 | Xing-Quan Liu | Innovative growth method to achieve high quality III-nitride layers for wide band gap optoelectronic and electronic devices |
US7341878B2 (en) * | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
US7585769B2 (en) * | 2006-05-05 | 2009-09-08 | Applied Materials, Inc. | Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE |
US20070277734A1 (en) * | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
US7498273B2 (en) * | 2006-05-30 | 2009-03-03 | Applied Materials, Inc. | Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes |
US20070281106A1 (en) * | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
US7902080B2 (en) * | 2006-05-30 | 2011-03-08 | Applied Materials, Inc. | Deposition-plasma cure cycle process to enhance film quality of silicon dioxide |
US7790634B2 (en) * | 2006-05-30 | 2010-09-07 | Applied Materials, Inc | Method for depositing and curing low-k films for gapfill and conformal film applications |
US7825038B2 (en) * | 2006-05-30 | 2010-11-02 | Applied Materials, Inc. | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen |
US8232176B2 (en) * | 2006-06-22 | 2012-07-31 | Applied Materials, Inc. | Dielectric deposition and etch back processes for bottom up gapfill |
US8362460B2 (en) | 2006-08-11 | 2013-01-29 | Cyrium Technologies Incorporated | Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails |
US7872252B2 (en) * | 2006-08-11 | 2011-01-18 | Cyrium Technologies Incorporated | Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails |
US7745352B2 (en) * | 2007-08-27 | 2010-06-29 | Applied Materials, Inc. | Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process |
JP2010537435A (ja) * | 2007-08-31 | 2010-12-02 | ラティス パワー (チアンシ) コーポレイション | 超高逆ブレークダウン電圧を有する窒化ガリウム発光デバイス |
WO2009045217A1 (en) * | 2007-10-04 | 2009-04-09 | Applied Materials, Inc. | Parasitic particle suppression in the growth of iii-v nitride films using mocvd and hvpe |
US7803722B2 (en) * | 2007-10-22 | 2010-09-28 | Applied Materials, Inc | Methods for forming a dielectric layer within trenches |
US7541297B2 (en) | 2007-10-22 | 2009-06-02 | Applied Materials, Inc. | Method and system for improving dielectric film quality for void free gap fill |
US7943531B2 (en) * | 2007-10-22 | 2011-05-17 | Applied Materials, Inc. | Methods for forming a silicon oxide layer over a substrate |
US7867923B2 (en) * | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
US20090120368A1 (en) * | 2007-11-08 | 2009-05-14 | Applied Materials, Inc. | Rotating temperature controlled substrate pedestal for film uniformity |
US7964040B2 (en) * | 2007-11-08 | 2011-06-21 | Applied Materials, Inc. | Multi-port pumping system for substrate processing chambers |
US20090120584A1 (en) * | 2007-11-08 | 2009-05-14 | Applied Materials, Inc. | Counter-balanced substrate support |
US20090272975A1 (en) * | 2008-05-05 | 2009-11-05 | Ding-Yuan Chen | Poly-Crystalline Layer Structure for Light-Emitting Diodes |
US20090277587A1 (en) * | 2008-05-09 | 2009-11-12 | Applied Materials, Inc. | Flowable dielectric equipment and processes |
US8357435B2 (en) | 2008-05-09 | 2013-01-22 | Applied Materials, Inc. | Flowable dielectric equipment and processes |
US8980382B2 (en) | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
US7935643B2 (en) * | 2009-08-06 | 2011-05-03 | Applied Materials, Inc. | Stress management for tensile films |
US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
US7989365B2 (en) * | 2009-08-18 | 2011-08-02 | Applied Materials, Inc. | Remote plasma source seasoning |
US20110136347A1 (en) * | 2009-10-21 | 2011-06-09 | Applied Materials, Inc. | Point-of-use silylamine generation |
US8449942B2 (en) | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
WO2011090626A2 (en) | 2009-12-30 | 2011-07-28 | Applied Materials, Inc. | Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio |
US8329262B2 (en) * | 2010-01-05 | 2012-12-11 | Applied Materials, Inc. | Dielectric film formation using inert gas excitation |
JP2013517616A (ja) | 2010-01-06 | 2013-05-16 | アプライド マテリアルズ インコーポレイテッド | 酸化物ライナを使用する流動可能な誘電体 |
SG182333A1 (en) | 2010-01-07 | 2012-08-30 | Applied Materials Inc | In-situ ozone cure for radical-component cvd |
SG183873A1 (en) | 2010-03-05 | 2012-10-30 | Applied Materials Inc | Conformal layers by radical-component cvd |
US8236708B2 (en) | 2010-03-09 | 2012-08-07 | Applied Materials, Inc. | Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursor |
US7994019B1 (en) | 2010-04-01 | 2011-08-09 | Applied Materials, Inc. | Silicon-ozone CVD with reduced pattern loading using incubation period deposition |
US8476142B2 (en) | 2010-04-12 | 2013-07-02 | Applied Materials, Inc. | Preferential dielectric gapfill |
US8524004B2 (en) | 2010-06-16 | 2013-09-03 | Applied Materials, Inc. | Loadlock batch ozone cure |
US8318584B2 (en) | 2010-07-30 | 2012-11-27 | Applied Materials, Inc. | Oxide-rich liner layer for flowable CVD gapfill |
US9285168B2 (en) | 2010-10-05 | 2016-03-15 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
US8664127B2 (en) | 2010-10-15 | 2014-03-04 | Applied Materials, Inc. | Two silicon-containing precursors for gapfill enhancing dielectric liner |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US20120180954A1 (en) | 2011-01-18 | 2012-07-19 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8450191B2 (en) | 2011-01-24 | 2013-05-28 | Applied Materials, Inc. | Polysilicon films by HDP-CVD |
US8716154B2 (en) | 2011-03-04 | 2014-05-06 | Applied Materials, Inc. | Reduced pattern loading using silicon oxide multi-layers |
US8445078B2 (en) | 2011-04-20 | 2013-05-21 | Applied Materials, Inc. | Low temperature silicon oxide conversion |
US8466073B2 (en) | 2011-06-03 | 2013-06-18 | Applied Materials, Inc. | Capping layer for reduced outgassing |
US9404178B2 (en) | 2011-07-15 | 2016-08-02 | Applied Materials, Inc. | Surface treatment and deposition for reduced outgassing |
US8617989B2 (en) | 2011-09-26 | 2013-12-31 | Applied Materials, Inc. | Liner property improvement |
US8551891B2 (en) | 2011-10-04 | 2013-10-08 | Applied Materials, Inc. | Remote plasma burn-in |
US8603898B2 (en) | 2012-03-30 | 2013-12-10 | Applied Materials, Inc. | Method for forming group III/V conformal layers on silicon substrates |
US8889566B2 (en) | 2012-09-11 | 2014-11-18 | Applied Materials, Inc. | Low cost flowable dielectric films |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
JP5928366B2 (ja) * | 2013-02-13 | 2016-06-01 | 豊田合成株式会社 | Iii族窒化物半導体の製造方法 |
US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
US10898618B2 (en) | 2014-09-08 | 2021-01-26 | The Texas A&M University System | Amorphous silicon oxide, amorphous silicon oxynitride, and amorphous silicon nitride thin films and uses thereof |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
CN111029442B (zh) * | 2018-10-09 | 2022-03-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | Iii族氮化物紫外发光二极管及其制作方法 |
CN111404025B (zh) * | 2020-03-30 | 2021-04-06 | 中国科学院半导体研究所 | 一种AlGaAs/AlGaInP混合材料的外延生长方法 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6427947A (en) | 1987-07-24 | 1989-01-30 | Alps Electric Co Ltd | Gradational printer |
US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
US6440823B1 (en) * | 1994-01-27 | 2002-08-27 | Advanced Technology Materials, Inc. | Low defect density (Ga, Al, In)N and HVPE process for making same |
JPH07321374A (ja) * | 1994-05-26 | 1995-12-08 | Furukawa Electric Co Ltd:The | 化合物半導体薄膜の成長方法 |
US5585648A (en) | 1995-02-03 | 1996-12-17 | Tischler; Michael A. | High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same |
US5661074A (en) | 1995-02-03 | 1997-08-26 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
JPH0964477A (ja) | 1995-08-25 | 1997-03-07 | Toshiba Corp | 半導体発光素子及びその製造方法 |
US5903017A (en) | 1996-02-26 | 1999-05-11 | Kabushiki Kaisha Toshiba | Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN |
JP3448450B2 (ja) | 1996-04-26 | 2003-09-22 | 三洋電機株式会社 | 発光素子およびその製造方法 |
JPH10270368A (ja) | 1997-03-26 | 1998-10-09 | Rikagaku Kenkyusho | SiCハイブリッド基板及びその製造方法 |
US5888886A (en) * | 1997-06-30 | 1999-03-30 | Sdl, Inc. | Method of doping gan layers p-type for device fabrication |
JP3822318B2 (ja) | 1997-07-17 | 2006-09-20 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
ES2226169T3 (es) | 1997-08-29 | 2005-03-16 | Cree, Inc. | Diodo emisor de luz del grupo iii robusto para una alta fiabilidad en aplicaciones habituales de encapsulacion. |
JPH1197803A (ja) | 1997-09-25 | 1999-04-09 | Fujitsu Ltd | 半導体発光装置 |
JP3955367B2 (ja) | 1997-09-30 | 2007-08-08 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 光半導体素子およびその製造方法 |
US6106898A (en) * | 1997-11-28 | 2000-08-22 | Japan Pionics, Co., Ltd. | Process for preparing nitride film |
GB2332563A (en) | 1997-12-18 | 1999-06-23 | Sharp Kk | Growth of group III nitride or group III-V nitride layers |
JP4166885B2 (ja) | 1998-05-18 | 2008-10-15 | 富士通株式会社 | 光半導体装置およびその製造方法 |
JP2000068498A (ja) | 1998-08-21 | 2000-03-03 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁性窒化物膜およびそれを用いた半導体装置 |
US6459100B1 (en) * | 1998-09-16 | 2002-10-01 | Cree, Inc. | Vertical geometry ingan LED |
JP2000196143A (ja) | 1998-12-25 | 2000-07-14 | Sharp Corp | 半導体発光素子 |
EP1039555A1 (en) * | 1999-03-05 | 2000-09-27 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
GB2350927A (en) * | 1999-06-12 | 2000-12-13 | Sharp Kk | A method growing nitride semiconductor layer by molecular beam epitaxy |
JP4465748B2 (ja) * | 1999-06-30 | 2010-05-19 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子の製造方法 |
KR20010029852A (ko) * | 1999-06-30 | 2001-04-16 | 도다 다다히데 | Ⅲ족 질화물계 화합물 반도체 소자 및 그 제조방법 |
US6812053B1 (en) * | 1999-10-14 | 2004-11-02 | Cree, Inc. | Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures |
JP2002198560A (ja) * | 2000-12-26 | 2002-07-12 | Sharp Corp | 半導体発光素子およびその製造方法 |
US6683327B2 (en) * | 2001-11-13 | 2004-01-27 | Lumileds Lighting U.S., Llc | Nucleation layer for improved light extraction from light emitting devices |
US7030428B2 (en) * | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
JP5046475B2 (ja) * | 2002-04-15 | 2012-10-10 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 金属・有機化学気相成長によって成長した非極性a平面窒化ガリウム薄膜 |
US7071494B2 (en) * | 2002-12-11 | 2006-07-04 | Lumileds Lighting U.S. Llc | Light emitting device with enhanced optical scattering |
-
2002
- 2002-12-11 US US10/317,309 patent/US6900067B2/en not_active Expired - Lifetime
-
2003
- 2003-11-07 EP EP03104116A patent/EP1429374A3/en not_active Ceased
- 2003-12-08 TW TW092134560A patent/TWI336958B/zh not_active IP Right Cessation
- 2003-12-10 JP JP2003411387A patent/JP4757441B2/ja not_active Expired - Lifetime
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2004193617A5 (ja) | ||
JP4092927B2 (ja) | Iii族窒化物系化合物半導体、iii族窒化物系化合物半導体素子及びiii族窒化物系化合物半導体基板の製造方法 | |
US7737429B2 (en) | Nitride based semiconductor device using nanorods and process for preparing the same | |
WO2008012877A1 (fr) | DISPOSITIF À SEMI-CONDUCTEURS COMPOSÉ EMPLOYANT UN SUBSTRAT DE SiC ET PROCÉDÉ POUR PRODUIRE CELUI-CI | |
JP2009123718A5 (ja) | ||
CN104037287A (zh) | 生长在Si衬底上的LED外延片及其制备方法 | |
JP2008034834A (ja) | シリコン基板上の窒化物単結晶成長方法、これを用いた窒化物半導体発光素子及びその製造方法 | |
JP2008034834A6 (ja) | シリコン基板上の窒化物単結晶成長方法、これを用いた窒化物半導体発光素子及びその製造方法 | |
JP2007142437A (ja) | 半導体素子およびその製造方法 | |
JP2007227671A (ja) | 発光素子 | |
JP2009510729A (ja) | シリコン基板上に窒化インジウムガリウムアルミニウム薄膜を製造するための方法 | |
CN109360876A (zh) | 一种发光二极管的外延片及其制备方法 | |
TWI244216B (en) | Light-emitting device and method for manufacturing the same | |
CN1438717A (zh) | 半导体发光元件 | |
WO2021226867A1 (zh) | 紫外led及其制作方法 | |
TW201236191A (en) | Nitride based light emitting device using patterned lattice buffer layer and method of manufacturing the same | |
KR100583163B1 (ko) | 질화물 반도체 및 그 제조방법 | |
KR100616543B1 (ko) | 실리콘기판 상에 질화물 단결정성장방법, 이를 이용한질화물 반도체 발광소자 및 그 제조방법 | |
US8154038B2 (en) | Group-III nitride for reducing stress caused by metal nitride reflector | |
JP2003060234A5 (ja) | ||
JP2001077413A (ja) | Iii族窒化物半導体発光素子およびその製造方法 | |
JP2009516377A (ja) | シリコン基板上に高品質の半導体発光デバイスを製造するための方法 | |
JP4960621B2 (ja) | 窒化物半導体成長基板及びその製造方法 | |
TW201236192A (en) | Nitride based light emitting device using wurtzite powder and method of manufacturing the same | |
JP3642199B2 (ja) | 窒化ガリウム系化合物半導体発光素子の製造方法 |