JP2004140344A5 - - Google Patents

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Publication number
JP2004140344A5
JP2004140344A5 JP2003320862A JP2003320862A JP2004140344A5 JP 2004140344 A5 JP2004140344 A5 JP 2004140344A5 JP 2003320862 A JP2003320862 A JP 2003320862A JP 2003320862 A JP2003320862 A JP 2003320862A JP 2004140344 A5 JP2004140344 A5 JP 2004140344A5
Authority
JP
Japan
Prior art keywords
sense amplifier
channel
channel mos
mos transistor
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003320862A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004140344A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003320862A priority Critical patent/JP2004140344A/ja
Priority claimed from JP2003320862A external-priority patent/JP2004140344A/ja
Priority to US10/668,027 priority patent/US6973002B2/en
Publication of JP2004140344A publication Critical patent/JP2004140344A/ja
Publication of JP2004140344A5 publication Critical patent/JP2004140344A5/ja
Pending legal-status Critical Current

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JP2003320862A 2002-09-24 2003-09-12 半導体集積回路 Pending JP2004140344A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003320862A JP2004140344A (ja) 2002-09-24 2003-09-12 半導体集積回路
US10/668,027 US6973002B2 (en) 2002-09-24 2003-09-22 Semiconductor integrated circuit comprising sense amplifier activating circuit for activating sense amplifier circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002278072 2002-09-24
JP2003320862A JP2004140344A (ja) 2002-09-24 2003-09-12 半導体集積回路

Publications (2)

Publication Number Publication Date
JP2004140344A JP2004140344A (ja) 2004-05-13
JP2004140344A5 true JP2004140344A5 (cg-RX-API-DMAC7.html) 2005-09-29

Family

ID=32095395

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003320862A Pending JP2004140344A (ja) 2002-09-24 2003-09-12 半導体集積回路

Country Status (2)

Country Link
US (1) US6973002B2 (cg-RX-API-DMAC7.html)
JP (1) JP2004140344A (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060018972A (ko) * 2004-08-26 2006-03-03 주식회사 하이닉스반도체 비트 라인 감지 증폭기 제어 회로
KR100728571B1 (ko) * 2006-02-09 2007-06-15 주식회사 하이닉스반도체 반도체 메모리의 데이터 센싱장치
KR100753418B1 (ko) * 2006-03-30 2007-08-30 주식회사 하이닉스반도체 로우 및 컬럼 어드레스를 이용하여 비트라인 감지 증폭동작을 제어하는 반도체 메모리 장치
KR100761854B1 (ko) 2006-08-08 2007-09-28 삼성전자주식회사 비트라인 이퀄라이저 및 이를 구비하는 반도체 메모리장치, 그리고 비트라인 이퀄라이저의 제조 방법
JP5486172B2 (ja) * 2008-08-07 2014-05-07 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR101171254B1 (ko) * 2010-05-31 2012-08-06 에스케이하이닉스 주식회사 비트라인 센스앰프 제어 회로 및 이를 구비하는 반도체 메모리 장치
JP5715716B2 (ja) * 2014-01-16 2015-05-13 ルネサスエレクトロニクス株式会社 半導体記憶装置
US9361972B1 (en) * 2015-03-20 2016-06-07 Intel Corporation Charge level maintenance in a memory

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0133973B1 (ko) * 1993-02-25 1998-04-20 기다오까 다까시 반도체 기억장치
JP3694072B2 (ja) 1995-08-18 2005-09-14 株式会社日立製作所 半導体装置
JPH09128966A (ja) * 1995-10-31 1997-05-16 Nec Corp ダイナミック型半導体記憶装置
EP1039470A3 (en) * 1999-03-25 2000-11-29 SANYO ELECTRIC Co., Ltd. Semiconductor memory device
JP4552258B2 (ja) * 2000-03-29 2010-09-29 エルピーダメモリ株式会社 半導体記憶装置

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