JP2004139632A5 - - Google Patents

Download PDF

Info

Publication number
JP2004139632A5
JP2004139632A5 JP2002300522A JP2002300522A JP2004139632A5 JP 2004139632 A5 JP2004139632 A5 JP 2004139632A5 JP 2002300522 A JP2002300522 A JP 2002300522A JP 2002300522 A JP2002300522 A JP 2002300522A JP 2004139632 A5 JP2004139632 A5 JP 2004139632A5
Authority
JP
Japan
Prior art keywords
capacitor
ferroelectric
reference potential
bit line
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002300522A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004139632A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002300522A priority Critical patent/JP2004139632A/ja
Priority claimed from JP2002300522A external-priority patent/JP2004139632A/ja
Priority to US10/684,497 priority patent/US6853600B2/en
Publication of JP2004139632A publication Critical patent/JP2004139632A/ja
Publication of JP2004139632A5 publication Critical patent/JP2004139632A5/ja
Pending legal-status Critical Current

Links

JP2002300522A 2002-10-15 2002-10-15 強誘電体メモリ Pending JP2004139632A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002300522A JP2004139632A (ja) 2002-10-15 2002-10-15 強誘電体メモリ
US10/684,497 US6853600B2 (en) 2002-10-15 2003-10-15 Ferro-electric random access memory using paraelectric and ferroelectric capacitor for generating a reference potential

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002300522A JP2004139632A (ja) 2002-10-15 2002-10-15 強誘電体メモリ

Publications (2)

Publication Number Publication Date
JP2004139632A JP2004139632A (ja) 2004-05-13
JP2004139632A5 true JP2004139632A5 (https=) 2005-01-27

Family

ID=32449193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002300522A Pending JP2004139632A (ja) 2002-10-15 2002-10-15 強誘電体メモリ

Country Status (2)

Country Link
US (1) US6853600B2 (https=)
JP (1) JP2004139632A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007058958A (ja) * 2005-08-23 2007-03-08 Toshiba Corp 強誘電体半導体記憶装置
JP2010033642A (ja) * 2008-07-28 2010-02-12 Toshiba Corp 半導体記憶装置
US9767879B2 (en) * 2015-02-17 2017-09-19 Texas Instruments Incorporated Setting of reference voltage for data sensing in ferroelectric memories
CN116136835B (zh) * 2023-04-19 2023-07-18 中国人民解放军国防科技大学 一种三进二出数值获取方法、装置及介质

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09134594A (ja) 1995-11-08 1997-05-20 Hitachi Ltd 半導体不揮発メモリ
JP2939973B2 (ja) * 1996-06-06 1999-08-25 日本電気株式会社 不揮発性半導体メモリ装置の駆動方法
JPH1116377A (ja) 1997-06-25 1999-01-22 Nec Corp 強誘電体メモリ装置
EP0928004A3 (en) * 1997-12-31 1999-12-15 Texas Instruments Inc. Ferroelectric memory
KR100432879B1 (ko) * 2001-03-05 2004-05-22 삼성전자주식회사 강유전체 랜덤 액세스 메모리 장치의 데이터 감지 방법

Similar Documents

Publication Publication Date Title
US9972371B2 (en) Memory device including memory cell for generating reference voltage
CN101174467B (zh) 自参考读出放大器电路和读出方法
JP3277603B2 (ja) 半導体記憶装置
JP2002093153A5 (https=)
US6771550B2 (en) Semiconductor memory device with stable precharge voltage level of data lines
JPH0256757B2 (https=)
JP2002269971A (ja) 半導体メモリおよび半導体メモリの駆動方法
US6347059B2 (en) Integrated memory having a bit line reference voltage, and a method for producing the bit line reference voltage
JP2000268558A (ja) 不揮発性強誘電体メモリ装置
US6208550B1 (en) Ferroelectric memory device and method for operating thereof
JP2007164978A (ja) 開放形ビットライン構造を有するマルチレベル動的メモリ装置及びその駆動方法
US7692948B2 (en) Semiconductor memory device
JP2011034658A (ja) 半導体記憶装置、ワード線の昇圧方法、及びシステム
JP4703040B2 (ja) 半導体メモリ装置およびその駆動方法
JP4083173B2 (ja) 半導体メモリ
US6768687B2 (en) Memory array
JPH05242672A (ja) 半導体ダイナミックメモリ
US6272037B1 (en) Ferroelectric memory device and method for generating reference level signal therefor
JP2004139632A5 (https=)
JP2000268581A5 (https=)
JPH08321176A (ja) 半導体メモリセル
JP4731798B2 (ja) ライト保護領域を備えた不揮発性メモリ装置
WO2004047116A8 (en) 2t2c signal margin test mode using different pre-charge levels for bl and /bl
WO2004077442A1 (ja) 半導体記憶装置及びデータ読み出し方法
US6950365B2 (en) Semiconductor memory device having bitline coupling scheme capable of preventing deterioration of sensing speed