JP2004139632A - 強誘電体メモリ - Google Patents

強誘電体メモリ Download PDF

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Publication number
JP2004139632A
JP2004139632A JP2002300522A JP2002300522A JP2004139632A JP 2004139632 A JP2004139632 A JP 2004139632A JP 2002300522 A JP2002300522 A JP 2002300522A JP 2002300522 A JP2002300522 A JP 2002300522A JP 2004139632 A JP2004139632 A JP 2004139632A
Authority
JP
Japan
Prior art keywords
potential
reference potential
capacitor
ferroelectric
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002300522A
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English (en)
Japanese (ja)
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JP2004139632A5 (https=
Inventor
Yasuo Ito
伊藤　寧夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002300522A priority Critical patent/JP2004139632A/ja
Priority to US10/684,497 priority patent/US6853600B2/en
Publication of JP2004139632A publication Critical patent/JP2004139632A/ja
Publication of JP2004139632A5 publication Critical patent/JP2004139632A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP2002300522A 2002-10-15 2002-10-15 強誘電体メモリ Pending JP2004139632A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002300522A JP2004139632A (ja) 2002-10-15 2002-10-15 強誘電体メモリ
US10/684,497 US6853600B2 (en) 2002-10-15 2003-10-15 Ferro-electric random access memory using paraelectric and ferroelectric capacitor for generating a reference potential

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002300522A JP2004139632A (ja) 2002-10-15 2002-10-15 強誘電体メモリ

Publications (2)

Publication Number Publication Date
JP2004139632A true JP2004139632A (ja) 2004-05-13
JP2004139632A5 JP2004139632A5 (https=) 2005-01-27

Family

ID=32449193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002300522A Pending JP2004139632A (ja) 2002-10-15 2002-10-15 強誘電体メモリ

Country Status (2)

Country Link
US (1) US6853600B2 (https=)
JP (1) JP2004139632A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007058958A (ja) * 2005-08-23 2007-03-08 Toshiba Corp 強誘電体半導体記憶装置
JP2018514891A (ja) * 2015-02-17 2018-06-07 日本テキサス・インスツルメンツ株式会社 強誘電体メモリにおけるデータ感知のための基準電圧の設定

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010033642A (ja) * 2008-07-28 2010-02-12 Toshiba Corp 半導体記憶装置
CN116136835B (zh) * 2023-04-19 2023-07-18 中国人民解放军国防科技大学 一种三进二出数值获取方法、装置及介质

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09134594A (ja) 1995-11-08 1997-05-20 Hitachi Ltd 半導体不揮発メモリ
JP2939973B2 (ja) * 1996-06-06 1999-08-25 日本電気株式会社 不揮発性半導体メモリ装置の駆動方法
JPH1116377A (ja) 1997-06-25 1999-01-22 Nec Corp 強誘電体メモリ装置
EP0928004A3 (en) * 1997-12-31 1999-12-15 Texas Instruments Inc. Ferroelectric memory
KR100432879B1 (ko) * 2001-03-05 2004-05-22 삼성전자주식회사 강유전체 랜덤 액세스 메모리 장치의 데이터 감지 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007058958A (ja) * 2005-08-23 2007-03-08 Toshiba Corp 強誘電体半導体記憶装置
JP2018514891A (ja) * 2015-02-17 2018-06-07 日本テキサス・インスツルメンツ株式会社 強誘電体メモリにおけるデータ感知のための基準電圧の設定

Also Published As

Publication number Publication date
US20040130928A1 (en) 2004-07-08
US6853600B2 (en) 2005-02-08

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