JP2004104127A5 - - Google Patents

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Publication number
JP2004104127A5
JP2004104127A5 JP2003311058A JP2003311058A JP2004104127A5 JP 2004104127 A5 JP2004104127 A5 JP 2004104127A5 JP 2003311058 A JP2003311058 A JP 2003311058A JP 2003311058 A JP2003311058 A JP 2003311058A JP 2004104127 A5 JP2004104127 A5 JP 2004104127A5
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JP
Japan
Prior art keywords
conductor
memory cell
storage device
data storage
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003311058A
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English (en)
Japanese (ja)
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JP2004104127A (ja
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Publication date
Priority claimed from US10/235,011 external-priority patent/US6577529B1/en
Application filed filed Critical
Publication of JP2004104127A publication Critical patent/JP2004104127A/ja
Publication of JP2004104127A5 publication Critical patent/JP2004104127A5/ja
Pending legal-status Critical Current

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JP2003311058A 2002-09-03 2003-09-03 マルチビット磁気メモリデバイス Pending JP2004104127A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/235,011 US6577529B1 (en) 2002-09-03 2002-09-03 Multi-bit magnetic memory device

Publications (2)

Publication Number Publication Date
JP2004104127A JP2004104127A (ja) 2004-04-02
JP2004104127A5 true JP2004104127A5 (enExample) 2005-06-09

Family

ID=22883687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003311058A Pending JP2004104127A (ja) 2002-09-03 2003-09-03 マルチビット磁気メモリデバイス

Country Status (6)

Country Link
US (2) US6577529B1 (enExample)
EP (1) EP1398795A3 (enExample)
JP (1) JP2004104127A (enExample)
KR (1) KR101018015B1 (enExample)
CN (1) CN100490005C (enExample)
TW (1) TW200405333A (enExample)

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US6627932B1 (en) 2002-04-11 2003-09-30 Micron Technology, Inc. Magnetoresistive memory device
AU2003243244A1 (en) * 2002-05-16 2003-12-02 Micron Technology, Inc. STACKED 1T-nMEMORY CELL STRUCTURE
US6940748B2 (en) * 2002-05-16 2005-09-06 Micron Technology, Inc. Stacked 1T-nMTJ MRAM structure
US7209378B2 (en) 2002-08-08 2007-04-24 Micron Technology, Inc. Columnar 1T-N memory cell structure
US6882553B2 (en) * 2002-08-08 2005-04-19 Micron Technology Inc. Stacked columnar resistive memory structure and its method of formation and operation
US6836429B2 (en) * 2002-12-07 2004-12-28 Hewlett-Packard Development Company, L.P. MRAM having two write conductors
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US6667901B1 (en) * 2003-04-29 2003-12-23 Hewlett-Packard Development Company, L.P. Dual-junction magnetic memory device and read method
US6958933B2 (en) * 2003-07-07 2005-10-25 Hewlett-Packard Development Company, L.P. Memory cell strings
US6865108B2 (en) * 2003-07-07 2005-03-08 Hewlett-Packard Development Company, L.P. Memory cell strings in a resistive cross point memory cell array
US7034374B2 (en) * 2003-08-22 2006-04-25 Micron Technology, Inc. MRAM layer having domain wall traps
US6947313B2 (en) * 2003-08-27 2005-09-20 Hewlett-Packard Development Company, L.P. Method and apparatus of coupling conductors in magnetic memory
US6961263B2 (en) * 2003-09-08 2005-11-01 Hewlett-Packard Development Company, L.P. Memory device with a thermally assisted write
US7079436B2 (en) * 2003-09-30 2006-07-18 Hewlett-Packard Development Company, L.P. Resistive cross point memory
US7136300B2 (en) * 2003-10-06 2006-11-14 Hewlett-Packard Development Company, Lp. Magnetic memory device including groups of series-connected memory elements
US7166881B2 (en) * 2003-10-13 2007-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-sensing level MRAM structures
US7072209B2 (en) * 2003-12-29 2006-07-04 Micron Technology, Inc. Magnetic memory having synthetic antiferromagnetic pinned layer
US7023724B2 (en) * 2004-01-10 2006-04-04 Honeywell International Inc. Pseudo tunnel junction
US7268986B2 (en) * 2004-03-31 2007-09-11 Hitachi Global Storage Technologies Netherlands B.V. Double tunnel junction using self-pinned center ferromagnet
US20050230724A1 (en) * 2004-04-16 2005-10-20 Sharp Laboratories Of America, Inc. 3D cross-point memory array with shared connections
US7502248B2 (en) * 2004-05-21 2009-03-10 Samsung Electronics Co., Ltd. Multi-bit magnetic random access memory device
US20060039183A1 (en) * 2004-05-21 2006-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-sensing level MRAM structures
US7105903B2 (en) * 2004-11-18 2006-09-12 Freescale Semiconductor, Inc. Methods and structures for electrical communication with an overlying electrode for a semiconductor element
JP4777807B2 (ja) * 2006-03-29 2011-09-21 エルピーダメモリ株式会社 積層メモリ
KR100885184B1 (ko) * 2007-01-30 2009-02-23 삼성전자주식회사 전기장 및 자기장에 의해 독립적으로 제어될 수 있는 저항특성을 갖는 메모리 장치 및 그 동작 방법
US8019022B2 (en) * 2007-03-22 2011-09-13 Mediatek Inc. Jitter-tolerance-enhanced CDR using a GDCO-based phase detector
US7539047B2 (en) 2007-05-08 2009-05-26 Honeywell International, Inc. MRAM cell with multiple storage elements
US8084759B2 (en) * 2007-10-31 2011-12-27 Qimonda Ag Integrated circuit including doped semiconductor line having conductive cladding
US7442647B1 (en) * 2008-03-05 2008-10-28 International Business Machines Corporation Structure and method for formation of cladded interconnects for MRAMs
US7751231B2 (en) * 2008-05-05 2010-07-06 Qimonda Ag Method and integrated circuit for determining the state of a resistivity changing memory cell
KR101598833B1 (ko) * 2009-12-21 2016-03-03 삼성전자주식회사 자기 메모리 소자 및 그 동작방법
US8207757B1 (en) 2011-02-07 2012-06-26 GlobalFoundries, Inc. Nonvolatile CMOS-compatible logic circuits and related operating methods
US8467234B2 (en) * 2011-02-08 2013-06-18 Crocus Technology Inc. Magnetic random access memory devices configured for self-referenced read operation
US8488372B2 (en) 2011-06-10 2013-07-16 Crocus Technology Inc. Magnetic random access memory devices including multi-bit cells
US8576615B2 (en) 2011-06-10 2013-11-05 Crocus Technology Inc. Magnetic random access memory devices including multi-bit cells
CN107481749A (zh) * 2016-06-13 2017-12-15 中电海康集团有限公司 一种自旋霍尔效应辅助写入的多态磁性随机存取存储器位元及自旋霍尔效应辅助写入方法
KR20180105530A (ko) * 2017-03-15 2018-09-28 에스케이하이닉스 주식회사 강유전성 메모리 소자 및 이를 포함하는 크로스 포인트 어레이 장치
CN111211135B (zh) * 2020-01-16 2022-08-05 华中科技大学 一种非对称铁电隧穿结多值存储单元的调制方法
US11335850B2 (en) 2020-03-12 2022-05-17 International Business Machines Corporation Magnetoresistive random-access memory device including magnetic tunnel junctions
US11514962B2 (en) 2020-11-12 2022-11-29 International Business Machines Corporation Two-bit magnetoresistive random-access memory cell

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US5650958A (en) * 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US5930164A (en) * 1998-02-26 1999-07-27 Motorola, Inc. Magnetic memory unit having four states and operating method thereof
US5986925A (en) * 1998-04-07 1999-11-16 Motorola, Inc. Magnetoresistive random access memory device providing simultaneous reading of two cells and operating method
US6127045A (en) * 1998-05-13 2000-10-03 International Business Machines Corporation Magnetic tunnel junction device with optimized ferromagnetic layer
US6097579A (en) * 1998-08-21 2000-08-01 International Business Machines Corporation Tunnel junction head structure without current shunting
US6259586B1 (en) * 1999-09-02 2001-07-10 International Business Machines Corporation Magnetic tunnel junction sensor with AP-coupled free layer
JP2001156357A (ja) * 1999-09-16 2001-06-08 Toshiba Corp 磁気抵抗効果素子および磁気記録素子
US6473336B2 (en) * 1999-12-16 2002-10-29 Kabushiki Kaisha Toshiba Magnetic memory device
JP2001217398A (ja) * 2000-02-03 2001-08-10 Rohm Co Ltd 強磁性トンネル接合素子を用いた記憶装置
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US6351409B1 (en) * 2001-01-04 2002-02-26 Motorola, Inc. MRAM write apparatus and method
US6404674B1 (en) * 2001-04-02 2002-06-11 Hewlett Packard Company Intellectual Property Administrator Cladded read-write conductor for a pinned-on-the-fly soft reference layer
US6504221B1 (en) * 2001-09-25 2003-01-07 Hewlett-Packard Company Magneto-resistive device including soft reference layer having embedded conductors
US6538917B1 (en) * 2001-09-25 2003-03-25 Hewlett-Packard Development Company, L.P. Read methods for magneto-resistive device having soft reference layer
US6778421B2 (en) * 2002-03-14 2004-08-17 Hewlett-Packard Development Company, Lp. Memory device array having a pair of magnetic bits sharing a common conductor line
US6593608B1 (en) * 2002-03-15 2003-07-15 Hewlett-Packard Development Company, L.P. Magneto resistive storage device having double tunnel junction

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