JP2004091850A - 処理装置及び処理方法 - Google Patents

処理装置及び処理方法 Download PDF

Info

Publication number
JP2004091850A
JP2004091850A JP2002253674A JP2002253674A JP2004091850A JP 2004091850 A JP2004091850 A JP 2004091850A JP 2002253674 A JP2002253674 A JP 2002253674A JP 2002253674 A JP2002253674 A JP 2002253674A JP 2004091850 A JP2004091850 A JP 2004091850A
Authority
JP
Japan
Prior art keywords
processing
gas
pressure
flow rate
inert gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002253674A
Other languages
English (en)
Japanese (ja)
Inventor
Hiroshi Kawanami
河南　博
Tadahiro Ishizaka
石坂　忠大
Yasuhiko Kojima
小島　康彦
Yasuhiro Oshima
大島　康弘
Takashi Shigeoka
重岡　隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2002253674A priority Critical patent/JP2004091850A/ja
Priority to CNB038206625A priority patent/CN100364046C/zh
Priority to US10/526,019 priority patent/US20060154383A1/en
Priority to PCT/JP2003/010377 priority patent/WO2004021415A1/ja
Priority to AU2003254942A priority patent/AU2003254942A1/en
Priority to TW092123196A priority patent/TW200406832A/zh
Priority to KR1020030060523A priority patent/KR20040020820A/ko
Publication of JP2004091850A publication Critical patent/JP2004091850A/ja
Priority to US12/421,271 priority patent/US20090214758A1/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2002253674A 2002-08-30 2002-08-30 処理装置及び処理方法 Pending JP2004091850A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2002253674A JP2004091850A (ja) 2002-08-30 2002-08-30 処理装置及び処理方法
CNB038206625A CN100364046C (zh) 2002-08-30 2003-08-15 处理装置和处理方法
US10/526,019 US20060154383A1 (en) 2002-08-30 2003-08-15 Processing apparatus and processing method
PCT/JP2003/010377 WO2004021415A1 (ja) 2002-08-30 2003-08-15 処理装置及び処理方法
AU2003254942A AU2003254942A1 (en) 2002-08-30 2003-08-15 Treating apparatus and method of treating
TW092123196A TW200406832A (en) 2002-08-30 2003-08-22 Treating apparatus and method of treating
KR1020030060523A KR20040020820A (ko) 2002-08-30 2003-08-30 처리 장치 및 처리 방법
US12/421,271 US20090214758A1 (en) 2002-08-30 2009-04-09 A processing method for processing a substrate placed on a placement stage in a process chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002253674A JP2004091850A (ja) 2002-08-30 2002-08-30 処理装置及び処理方法

Publications (1)

Publication Number Publication Date
JP2004091850A true JP2004091850A (ja) 2004-03-25

Family

ID=31972803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002253674A Pending JP2004091850A (ja) 2002-08-30 2002-08-30 処理装置及び処理方法

Country Status (7)

Country Link
US (2) US20060154383A1 (OSRAM)
JP (1) JP2004091850A (OSRAM)
KR (1) KR20040020820A (OSRAM)
CN (1) CN100364046C (OSRAM)
AU (1) AU2003254942A1 (OSRAM)
TW (1) TW200406832A (OSRAM)
WO (1) WO2004021415A1 (OSRAM)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007036197A (ja) * 2005-06-23 2007-02-08 Tokyo Electron Ltd 半導体製造装置の構成部材及び半導体製造装置
WO2007018235A1 (ja) * 2005-08-10 2007-02-15 Tokyo Electron Limited Ｗ系膜の成膜方法、ゲート電極の形成方法、および半導体装置の製造方法
JP2009516077A (ja) * 2005-11-17 2009-04-16 ベネク・オサケユキテュア Ａｌｄ反応容器
WO2009057583A1 (ja) * 2007-10-31 2009-05-07 Tohoku University プラズマ処理システム及びプラズマ処理方法
US8202575B2 (en) * 2004-06-28 2012-06-19 Cambridge Nanotech, Inc. Vapor deposition systems and methods
JP2013225660A (ja) * 2012-03-21 2013-10-31 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP2017179397A (ja) * 2016-03-28 2017-10-05 東京エレクトロン株式会社 基板処理装置、ガスの供給方法、基板処理方法及び成膜方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004091850A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置及び処理方法
US7217578B1 (en) * 2004-08-02 2007-05-15 Advanced Micro Devices, Inc. Advanced process control of thermal oxidation processes, and systems for accomplishing same
JP2007211326A (ja) * 2006-02-13 2007-08-23 Nec Electronics Corp 成膜装置および成膜方法
CN104233229A (zh) * 2013-06-24 2014-12-24 北京北方微电子基地设备工艺研究中心有限责任公司 进气装置及等离子体加工设备
US9885567B2 (en) * 2013-08-27 2018-02-06 Applied Materials, Inc. Substrate placement detection in semiconductor equipment using thermal response characteristics
JP6135475B2 (ja) * 2013-11-20 2017-05-31 東京エレクトロン株式会社 ガス供給装置、成膜装置、ガス供給方法及び記憶媒体
JP5950892B2 (ja) * 2013-11-29 2016-07-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP6147693B2 (ja) 2014-03-31 2017-06-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、およびプログラム
JP5947435B1 (ja) 2015-08-27 2016-07-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体
WO2019188128A1 (ja) * 2018-03-30 2019-10-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP7330060B2 (ja) * 2019-10-18 2023-08-21 東京エレクトロン株式会社 成膜装置、制御装置及び圧力計の調整方法
US20220025517A1 (en) * 2020-07-27 2022-01-27 Enchip Enterprise Llc Semiconductor Processing System, and Control Assembly and Method Thereof
US12205803B2 (en) * 2021-02-25 2025-01-21 Kurt J. Lesker Company Pressure-induced temperature modification during atomic scale processing
JP7710876B2 (ja) * 2021-04-19 2025-07-22 株式会社荏原製作所 研磨方法、および研磨装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4747367A (en) * 1986-06-12 1988-05-31 Crystal Specialties, Inc. Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition
US5381756A (en) * 1992-03-04 1995-01-17 Fujitsu Limited Magnesium doping in III-V compound semiconductor
JPH0748478B2 (ja) * 1992-07-10 1995-05-24 日本電気株式会社 気相成長装置
US5776615A (en) * 1992-11-09 1998-07-07 Northwestern University Superhard composite materials including compounds of carbon and nitrogen deposited on metal and metal nitride, carbide and carbonitride
JPH06295862A (ja) * 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
US5616208A (en) * 1993-09-17 1997-04-01 Tokyo Electron Limited Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus
JPH08130187A (ja) * 1994-10-31 1996-05-21 Toshiba Corp 半導体気相成長装置および半導体気相成長方法
US6122429A (en) * 1995-03-02 2000-09-19 Northwestern University Rare earth doped barium titanate thin film optical working medium for optical devices
US5702532A (en) * 1995-05-31 1997-12-30 Hughes Aircraft Company MOCVD reactor system for indium antimonide epitaxial material
US6126753A (en) * 1998-05-13 2000-10-03 Tokyo Electron Limited Single-substrate-processing CVD apparatus and method
US6217659B1 (en) * 1998-10-16 2001-04-17 Air Products And Chemical, Inc. Dynamic blending gas delivery system and method
US6454860B2 (en) * 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
US6503330B1 (en) * 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
JP4200618B2 (ja) * 1999-12-27 2008-12-24 ソニー株式会社 半導体膜形成方法及び薄膜半導体装置の製造方法
EP1266054B1 (en) * 2000-03-07 2006-12-20 Asm International N.V. Graded thin films
US20020073924A1 (en) * 2000-12-15 2002-06-20 Chiang Tony P. Gas introduction system for a reactor
JP2002285333A (ja) * 2001-03-26 2002-10-03 Hitachi Ltd 半導体装置の製造方法
US6701066B2 (en) * 2001-10-11 2004-03-02 Micron Technology, Inc. Delivery of solid chemical precursors
US7192486B2 (en) * 2002-08-15 2007-03-20 Applied Materials, Inc. Clog-resistant gas delivery system
JP2004091850A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置及び処理方法
JP4734231B2 (ja) * 2003-03-14 2011-07-27 アイクストロン・インコーポレーテッド 原子層堆積のサイクル時間改善のための方法と装置
US7335396B2 (en) * 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8202575B2 (en) * 2004-06-28 2012-06-19 Cambridge Nanotech, Inc. Vapor deposition systems and methods
JP2007036197A (ja) * 2005-06-23 2007-02-08 Tokyo Electron Ltd 半導体製造装置の構成部材及び半導体製造装置
WO2007018235A1 (ja) * 2005-08-10 2007-02-15 Tokyo Electron Limited Ｗ系膜の成膜方法、ゲート電極の形成方法、および半導体装置の製造方法
JP2009516077A (ja) * 2005-11-17 2009-04-16 ベネク・オサケユキテュア Ａｌｄ反応容器
WO2009057583A1 (ja) * 2007-10-31 2009-05-07 Tohoku University プラズマ処理システム及びプラズマ処理方法
JP5231441B2 (ja) * 2007-10-31 2013-07-10 国立大学法人東北大学 プラズマ処理システム及びプラズマ処理方法
JP2013225660A (ja) * 2012-03-21 2013-10-31 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP2017179397A (ja) * 2016-03-28 2017-10-05 東京エレクトロン株式会社 基板処理装置、ガスの供給方法、基板処理方法及び成膜方法
KR20170113154A (ko) * 2016-03-28 2017-10-12 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 가스의 공급 방법, 기판 처리 방법 및 성막 방법
KR102143678B1 (ko) * 2016-03-28 2020-08-11 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 가스의 공급 방법, 기판 처리 방법 및 성막 방법

Also Published As

Publication number Publication date
AU2003254942A1 (en) 2004-03-19
CN1703769A (zh) 2005-11-30
WO2004021415A1 (ja) 2004-03-11
KR20040020820A (ko) 2004-03-09
TW200406832A (en) 2004-05-01
TWI299185B (OSRAM) 2008-07-21
CN100364046C (zh) 2008-01-23
US20090214758A1 (en) 2009-08-27
US20060154383A1 (en) 2006-07-13

Similar Documents

Publication Publication Date Title
JP2004091850A (ja) 処理装置及び処理方法
KR101521466B1 (ko) 가스 공급 장치, 열처리 장치, 가스 공급 방법 및 열처리 방법
JP4325301B2 (ja) 載置台、処理装置及び処理方法
KR101552532B1 (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
JP6877188B2 (ja) ガス供給装置、ガス供給方法及び成膜方法
US9508546B2 (en) Method of manufacturing semiconductor device
KR101991574B1 (ko) 성막 장치, 및 그것에 이용하는 가스 토출 부재
US20180112312A1 (en) Film forming apparatus and film forming method
KR101789863B1 (ko) 성막 방법, 성막 장치 및 기억 매체
US8642127B2 (en) Method of forming titanium nitride film
JP5238688B2 (ja) Ｃｖｄ成膜装置
JP6426893B2 (ja) コンタクト層の形成方法
KR20150077318A (ko) 기판 처리 장치 및 반도체 장치의 제조 방법
JP2013076113A (ja) ガス供給装置及び成膜装置
CN105428227A (zh) 半导体器件的制造方法及衬底处理装置
KR102388169B1 (ko) RuSi막의 형성 방법 및 성막 장치
KR20210128914A (ko) 원료 공급 장치 및 성막 장치
JP2007146252A (ja) 熱処理方法、熱処理装置及び記憶媒体
JP6865602B2 (ja) 成膜方法
JP2009057638A (ja) 処理方法
JP4361747B2 (ja) 薄膜の形成方法
WO2020213506A1 (ja) 基板処理装置、基板処理システム及び基板処理方法
JP4543611B2 (ja) プリコート層の形成方法及び成膜方法
JP2018085399A (ja) 成膜装置および成膜方法
TW202414597A (zh) 成膜方法及處理裝置

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070424

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070622

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080212

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080610