JP2004088083A - 半導体発光素子、その製造方法及びその実装方法 - Google Patents

半導体発光素子、その製造方法及びその実装方法 Download PDF

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JP2004088083A
JP2004088083A JP2003175716A JP2003175716A JP2004088083A JP 2004088083 A JP2004088083 A JP 2004088083A JP 2003175716 A JP2003175716 A JP 2003175716A JP 2003175716 A JP2003175716 A JP 2003175716A JP 2004088083 A JP2004088083 A JP 2004088083A
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semiconductor
film
laminated film
electrode
substrate
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Japanese (ja)
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JP2004088083A5 (enExample
Inventor
Tetsuzo Ueda
哲三 上田
Masaaki Yuri
正昭 油利
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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JP2003175716A 2002-06-25 2003-06-20 半導体発光素子、その製造方法及びその実装方法 Pending JP2004088083A (ja)

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Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340849A (ja) * 2004-05-26 2005-12-08 Lumileds Lighting Us Llc Ｅｓｄ防護用の高速スイッチング・ダイオード内臓ｌｅｄチップ
JP2007013093A (ja) * 2005-07-01 2007-01-18 Epitech Technology Corp 発光ダイオード
JP2007150314A (ja) * 2005-11-24 2007-06-14 Samsung Electro Mech Co Ltd 垂直構造の窒化ガリウム系発光ダイオード素子
US7244628B2 (en) 2003-05-22 2007-07-17 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor devices
JP2007243047A (ja) * 2006-03-10 2007-09-20 Matsushita Electric Works Ltd 発光素子の製造方法
JP2007258277A (ja) * 2006-03-20 2007-10-04 Matsushita Electric Works Ltd 半導体発光素子
JP2008060279A (ja) * 2006-08-30 2008-03-13 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード素子およびその製造方法
JP2008543032A (ja) * 2005-05-27 2008-11-27 ラティス パワー （チアンシ） コーポレイション ＩｎＧａＡｌＮ発光装置とその製造方法
JP2009534857A (ja) * 2006-04-27 2009-09-24 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス半導体チップ
JP2010074122A (ja) * 2008-08-21 2010-04-02 Sumitomo Electric Ind Ltd Ｌｅｄ用ヒートシンク、ｌｅｄ用ヒートシンク前駆体、ｌｅｄ素子、ｌｅｄ用ヒートシンクの製造方法およびｌｅｄ素子の製造方法
WO2010041370A1 (ja) * 2008-10-06 2010-04-15 パナソニック株式会社 窒化物半導体発光ダイオード
US7763477B2 (en) 2004-03-15 2010-07-27 Tinggi Technologies Pte Limited Fabrication of semiconductor devices
US7786491B2 (en) 2006-02-02 2010-08-31 Panasonic Corporation Semiconductor light-emitting device comprising a plurality of semiconductor layers
US8004001B2 (en) 2005-09-29 2011-08-23 Tinggi Technologies Private Limited Fabrication of semiconductor devices for light emission
US8034643B2 (en) 2003-09-19 2011-10-11 Tinggi Technologies Private Limited Method for fabrication of a semiconductor device
JP2012238883A (ja) * 2006-06-30 2012-12-06 Samsung Led Co Ltd 窒化物半導体発光素子アレイ
US8981420B2 (en) 2005-05-19 2015-03-17 Nichia Corporation Nitride semiconductor device
US8993121B2 (en) 2010-02-19 2015-03-31 Sumitomo Electric Industries, Ltd. Metal laminated structure and method for producing the same
US8999019B2 (en) 2005-10-21 2015-04-07 Taylor Biomass Energy, Llc Process and system for gasification with in-situ tar removal
US9199433B2 (en) 2009-06-30 2015-12-01 Sumitomo Electric Industries, Ltd. Metal laminated structure and method for producing the metal laminated structure
JP2018531504A (ja) * 2015-09-02 2018-10-25 オキュラス ブイアール，エルエルシー 半導体デバイスの組立
JP2020502796A (ja) * 2016-12-16 2020-01-23 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体構成素子を製造する方法
JP2020107763A (ja) * 2018-12-27 2020-07-09 日亜化学工業株式会社 半導体素子の実装方法及び半導体装置の製造方法
US10916192B2 (en) 2016-04-26 2021-02-09 Facebook Technologies, Llc Display with redundant light emitting devices

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8309377B2 (en) 2004-04-07 2012-11-13 Tinggi Technologies Private Limited Fabrication of reflective layer on semiconductor light emitting devices
SG131803A1 (en) 2005-10-19 2007-05-28 Tinggi Tech Private Ltd Fabrication of transistors
SG133432A1 (en) 2005-12-20 2007-07-30 Tinggi Tech Private Ltd Localized annealing during semiconductor device fabrication
SG140473A1 (en) 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
SG140512A1 (en) 2006-09-04 2008-03-28 Tinggi Tech Private Ltd Electrical current distribution in light emitting devices

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7244628B2 (en) 2003-05-22 2007-07-17 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor devices
US8034643B2 (en) 2003-09-19 2011-10-11 Tinggi Technologies Private Limited Method for fabrication of a semiconductor device
US7763477B2 (en) 2004-03-15 2010-07-27 Tinggi Technologies Pte Limited Fabrication of semiconductor devices
JP2005340849A (ja) * 2004-05-26 2005-12-08 Lumileds Lighting Us Llc Ｅｓｄ防護用の高速スイッチング・ダイオード内臓ｌｅｄチップ
US8981420B2 (en) 2005-05-19 2015-03-17 Nichia Corporation Nitride semiconductor device
JP2012212929A (ja) * 2005-05-27 2012-11-01 Lattice Power (Jiangxi) Corp ＩｎＧａＡｌＮ発光装置とその製造方法
JP2008543032A (ja) * 2005-05-27 2008-11-27 ラティス パワー （チアンシ） コーポレイション ＩｎＧａＡｌＮ発光装置とその製造方法
JP2007013093A (ja) * 2005-07-01 2007-01-18 Epitech Technology Corp 発光ダイオード
US8004001B2 (en) 2005-09-29 2011-08-23 Tinggi Technologies Private Limited Fabrication of semiconductor devices for light emission
US8999019B2 (en) 2005-10-21 2015-04-07 Taylor Biomass Energy, Llc Process and system for gasification with in-situ tar removal
US7791100B2 (en) 2005-11-24 2010-09-07 Samsung Electro-Mechanics Co., Ltd. Vertical gallium nitride based light emitting diode with multiple electrode branches
JP2007150314A (ja) * 2005-11-24 2007-06-14 Samsung Electro Mech Co Ltd 垂直構造の窒化ガリウム系発光ダイオード素子
US7786491B2 (en) 2006-02-02 2010-08-31 Panasonic Corporation Semiconductor light-emitting device comprising a plurality of semiconductor layers
JP2007243047A (ja) * 2006-03-10 2007-09-20 Matsushita Electric Works Ltd 発光素子の製造方法
JP2007258277A (ja) * 2006-03-20 2007-10-04 Matsushita Electric Works Ltd 半導体発光素子
US8378371B2 (en) 2006-04-27 2013-02-19 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip
JP2009534857A (ja) * 2006-04-27 2009-09-24 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス半導体チップ
JP2012238883A (ja) * 2006-06-30 2012-12-06 Samsung Led Co Ltd 窒化物半導体発光素子アレイ
JP2008060279A (ja) * 2006-08-30 2008-03-13 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード素子およびその製造方法
JP2010074122A (ja) * 2008-08-21 2010-04-02 Sumitomo Electric Ind Ltd Ｌｅｄ用ヒートシンク、ｌｅｄ用ヒートシンク前駆体、ｌｅｄ素子、ｌｅｄ用ヒートシンクの製造方法およびｌｅｄ素子の製造方法
WO2010041370A1 (ja) * 2008-10-06 2010-04-15 パナソニック株式会社 窒化物半導体発光ダイオード
US9199433B2 (en) 2009-06-30 2015-12-01 Sumitomo Electric Industries, Ltd. Metal laminated structure and method for producing the metal laminated structure
US8993121B2 (en) 2010-02-19 2015-03-31 Sumitomo Electric Industries, Ltd. Metal laminated structure and method for producing the same
JP2018531504A (ja) * 2015-09-02 2018-10-25 オキュラス ブイアール，エルエルシー 半導体デバイスの組立
US10878733B2 (en) 2015-09-02 2020-12-29 Facebook Technologies, Llc Assembly of semiconductor devices using multiple LED placement cycles
US10916192B2 (en) 2016-04-26 2021-02-09 Facebook Technologies, Llc Display with redundant light emitting devices
US11727869B2 (en) 2016-04-26 2023-08-15 Meta Platforms Technologies, Llc Display with redundant light emitting devices
JP2020502796A (ja) * 2016-12-16 2020-01-23 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体構成素子を製造する方法
US11081620B2 (en) 2016-12-16 2021-08-03 Osram Oled Gmbh Method of producing a semiconductor component
JP2020107763A (ja) * 2018-12-27 2020-07-09 日亜化学工業株式会社 半導体素子の実装方法及び半導体装置の製造方法
JP7436772B2 (ja) 2018-12-27 2024-02-22 日亜化学工業株式会社 半導体装置の製造方法

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