JP2004006662A - 窒化ガリウム系化合物半導体素子 - Google Patents

窒化ガリウム系化合物半導体素子 Download PDF

Info

Publication number
JP2004006662A
JP2004006662A JP2003040300A JP2003040300A JP2004006662A JP 2004006662 A JP2004006662 A JP 2004006662A JP 2003040300 A JP2003040300 A JP 2003040300A JP 2003040300 A JP2003040300 A JP 2003040300A JP 2004006662 A JP2004006662 A JP 2004006662A
Authority
JP
Japan
Prior art keywords
based compound
layer
gallium nitride
compound semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003040300A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004006662A5 (enExample
Inventor
Yukio Narukawa
成川　幸男
Isamu Niki
仁木　勇
Daisuke Sanga
三賀　大輔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2003040300A priority Critical patent/JP2004006662A/ja
Publication of JP2004006662A publication Critical patent/JP2004006662A/ja
Publication of JP2004006662A5 publication Critical patent/JP2004006662A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Drying Of Semiconductors (AREA)
  • Led Devices (AREA)
JP2003040300A 2002-03-28 2003-02-18 窒化ガリウム系化合物半導体素子 Pending JP2004006662A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003040300A JP2004006662A (ja) 2002-03-28 2003-02-18 窒化ガリウム系化合物半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002090448 2002-03-28
JP2003040300A JP2004006662A (ja) 2002-03-28 2003-02-18 窒化ガリウム系化合物半導体素子

Publications (2)

Publication Number Publication Date
JP2004006662A true JP2004006662A (ja) 2004-01-08
JP2004006662A5 JP2004006662A5 (enExample) 2006-04-06

Family

ID=30446196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003040300A Pending JP2004006662A (ja) 2002-03-28 2003-02-18 窒化ガリウム系化合物半導体素子

Country Status (1)

Country Link
JP (1) JP2004006662A (enExample)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005303278A (ja) * 2004-03-16 2005-10-27 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
WO2007126158A1 (ja) 2006-04-27 2007-11-08 Panasonic Corporation 半導体発光素子およびウエハ
KR100780175B1 (ko) * 2006-03-14 2007-11-27 삼성전기주식회사 발광 다이오드의 제조방법
JP2008300580A (ja) * 2007-05-30 2008-12-11 Nichia Corp 発光素子及び発光装置
JP2009059969A (ja) * 2007-08-31 2009-03-19 Seiwa Electric Mfg Co Ltd 半導体発光素子、発光装置、照明装置、表示装置及び半導体発光素子の製造方法
WO2009054088A1 (ja) 2007-10-23 2009-04-30 Panasonic Corporation 半導体発光素子およびそれを用いた半導体発光装置とその製造方法
JP2010141331A (ja) * 2008-12-09 2010-06-24 Samsung Electro-Mechanics Co Ltd 半導体発光素子及びその製造方法
US7791098B2 (en) 2004-03-31 2010-09-07 Nichia Corporation Nitride semiconductor light emitting device
WO2011021774A3 (ko) * 2009-08-20 2011-04-14 Youn Kang-Sik 반도체 광소자 및 그 제조방법
JP2011134955A (ja) * 2009-12-25 2011-07-07 Disco Abrasive Syst Ltd 板状材料からのチップ状部品の生産方法
WO2012165739A1 (en) * 2011-06-01 2012-12-06 Seoul Opto Device Co., Ltd. Semiconductor light-emitting device, method of fabricating the same, and package comprising the same
US20130193478A1 (en) * 2012-01-31 2013-08-01 Hironao Shinohara Semiconductor light emitting element, method for producing semiconductor light emitting element and light emitting device
JP2014060277A (ja) * 2012-09-18 2014-04-03 Stanley Electric Co Ltd Ｌｅｄアレイ
JP2014068042A (ja) * 2009-07-15 2014-04-17 Mitsubishi Chemicals Corp 半導体発光素子、半導体発光装置、半導体発光素子の製造方法、および半導体発光装置の製造方法
US8791469B2 (en) 2011-12-05 2014-07-29 Toyoda Gosei Co., Ltd. Semiconductor light emitting element having a plurality of substrate cutouts and semiconductor layer side surface projections
JP2014160797A (ja) * 2013-02-19 2014-09-04 Lextar Electronics Corp 発光ダイオードチップ及びその製造方法
JP2015076454A (ja) * 2013-10-07 2015-04-20 豊田合成株式会社 発光装置
WO2020044980A1 (ja) * 2018-08-27 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 発光素子、及び発光素子の製造方法
JP7455267B1 (ja) 2022-10-28 2024-03-25 Ｄｏｗａエレクトロニクス株式会社 紫外線発光素子及びその製造方法

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005303278A (ja) * 2004-03-16 2005-10-27 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
US7791098B2 (en) 2004-03-31 2010-09-07 Nichia Corporation Nitride semiconductor light emitting device
KR100780175B1 (ko) * 2006-03-14 2007-11-27 삼성전기주식회사 발광 다이오드의 제조방법
US7915714B2 (en) 2006-04-27 2011-03-29 Panasonic Corporation Semiconductor light emitting element and wafer
WO2007126158A1 (ja) 2006-04-27 2007-11-08 Panasonic Corporation 半導体発光素子およびウエハ
JP2008300580A (ja) * 2007-05-30 2008-12-11 Nichia Corp 発光素子及び発光装置
JP2009059969A (ja) * 2007-08-31 2009-03-19 Seiwa Electric Mfg Co Ltd 半導体発光素子、発光装置、照明装置、表示装置及び半導体発光素子の製造方法
WO2009054088A1 (ja) 2007-10-23 2009-04-30 Panasonic Corporation 半導体発光素子およびそれを用いた半導体発光装置とその製造方法
US8242514B2 (en) 2008-12-09 2012-08-14 Samsung Led Co., Ltd. Semiconductor light emitting diode
KR101123010B1 (ko) * 2008-12-09 2012-06-15 삼성엘이디 주식회사 반도체 발광소자 및 그 제조방법
JP2010141331A (ja) * 2008-12-09 2010-06-24 Samsung Electro-Mechanics Co Ltd 半導体発光素子及びその製造方法
JP2014068042A (ja) * 2009-07-15 2014-04-17 Mitsubishi Chemicals Corp 半導体発光素子、半導体発光装置、半導体発光素子の製造方法、および半導体発光装置の製造方法
WO2011021774A3 (ko) * 2009-08-20 2011-04-14 Youn Kang-Sik 반도체 광소자 및 그 제조방법
JP2011134955A (ja) * 2009-12-25 2011-07-07 Disco Abrasive Syst Ltd 板状材料からのチップ状部品の生産方法
WO2012165739A1 (en) * 2011-06-01 2012-12-06 Seoul Opto Device Co., Ltd. Semiconductor light-emitting device, method of fabricating the same, and package comprising the same
US8791469B2 (en) 2011-12-05 2014-07-29 Toyoda Gosei Co., Ltd. Semiconductor light emitting element having a plurality of substrate cutouts and semiconductor layer side surface projections
JP2013157523A (ja) * 2012-01-31 2013-08-15 Toyoda Gosei Co Ltd 半導体発光素子、半導体発光素子の製造方法および発光装置
US20130193478A1 (en) * 2012-01-31 2013-08-01 Hironao Shinohara Semiconductor light emitting element, method for producing semiconductor light emitting element and light emitting device
US8916904B2 (en) 2012-01-31 2014-12-23 Toyoda Gosei Co., Ltd. Semiconductor light emitting element, method for producing semiconductor light emitting element and light emitting device
JP2014060277A (ja) * 2012-09-18 2014-04-03 Stanley Electric Co Ltd Ｌｅｄアレイ
JP2014160797A (ja) * 2013-02-19 2014-09-04 Lextar Electronics Corp 発光ダイオードチップ及びその製造方法
JP2015076454A (ja) * 2013-10-07 2015-04-20 豊田合成株式会社 発光装置
WO2020044980A1 (ja) * 2018-08-27 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 発光素子、及び発光素子の製造方法
JP7455267B1 (ja) 2022-10-28 2024-03-25 Ｄｏｗａエレクトロニクス株式会社 紫外線発光素子及びその製造方法
JP2024065061A (ja) * 2022-10-28 2024-05-14 Ｄｏｗａエレクトロニクス株式会社 紫外線発光素子及びその製造方法

Similar Documents

Publication Publication Date Title
JP4325232B2 (ja) 窒化物半導体素子
US7754504B2 (en) Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V group compound semiconductor, light source cell unit, light-emitting diode
US8207003B2 (en) Method of manufacturing gallium nitride-based compound semiconductor light-emitting device, gallium nitride-based compound semiconductor light-emitting device, and lamp
JP3551101B2 (ja) 窒化物半導体素子
JP4816434B2 (ja) 窒化物半導体素子
US8502254B2 (en) Group III nitride semiconductor light-emitting device and method of manufacturing the same, and lamp
JP4244542B2 (ja) 窒化ガリウム系化合物半導体発光素子及びその製造方法
US7947995B2 (en) Gallium nitride-based compound semiconductor light emitting device
TWI425664B (zh) 半導體發光元件及半導體發光元件之製造方法
KR101060830B1 (ko) 질화갈륨계 화합물 반도체 발광 소자의 제조 방법, 질화갈륨계 화합물 반도체 발광 소자 및 이를 이용한 램프
JP5983554B2 (ja) Ｉｉｉ族窒化物半導体発光素子
JP5849215B2 (ja) 紫外半導体発光素子
JP2004006662A (ja) 窒化ガリウム系化合物半導体素子
KR20080065666A (ko) 질화물 반도체 발광 소자 및 질화물 반도체 발광 소자 제조방법
JP3921989B2 (ja) 半導体発光素子
JP4325160B2 (ja) 窒化物半導体発光素子
JP3951973B2 (ja) 窒化物半導体素子
JP2004048076A (ja) 半導体素子およびその製造方法
JP3847000B2 (ja) 窒化物半導体基板上に活性層を備えた窒化物半導体層を有する窒化物半導体素子及びその成長方法
JP5668647B2 (ja) Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP4360066B2 (ja) 窒化ガリウム系発光素子
JPH10290047A (ja) 窒化物半導体素子
JP2011082248A (ja) 半導体発光素子及びその製造方法、並びにランプ
JP2001024223A (ja) 窒化物半導体発光ダイオード
JP3857417B2 (ja) 窒化物半導体素子

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060220

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060220

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081216

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081216

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090216

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090714