JP2010141331A - 半導体発光素子及びその製造方法 - Google Patents
半導体発光素子及びその製造方法 Download PDFInfo
- Publication number
- JP2010141331A JP2010141331A JP2009279526A JP2009279526A JP2010141331A JP 2010141331 A JP2010141331 A JP 2010141331A JP 2009279526 A JP2009279526 A JP 2009279526A JP 2009279526 A JP2009279526 A JP 2009279526A JP 2010141331 A JP2010141331 A JP 2010141331A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- substrate
- semiconductor layer
- type semiconductor
- emitting structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000003746 surface roughness Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 24
- 230000008569 process Effects 0.000 description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 235000019592 roughness Nutrition 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】本発明による半導体発光素子の製造方法は、基板上に、N型半導体層、活性層、及びP型半導体層が順次積層された発光構造物を形成する工程と、基板方向または発光構造物方向から点線状の分割溝を形成する工程と、基板と発光構造体のうち少なくとも一つに圧力を加え、分割溝を基準にして基板及び発光構造物を分割する工程と、を含むことを特徴とする。
【選択図】図5
Description
20 N型半導体層
30 N型電極
40 活性層
50 P型半導体層
60 透明電極
70 P型電極
12,22,42,52 第1領域
14,24,44,54 第2領域
Claims (5)
- N型半導体層、活性層、及びP型半導体層が順次積層された発光構造物を含む発光素子であって、
前記発光構造物の側面には、 表面粗さが互いに異なる第1領域と第2領域とが繰り返し形成されることを特徴とする半導体発光素子。 - 前記N型半導体層の下面に積層される基板をさらに含み、
前記基板の側面にも前記第1領域と第2領域とが繰り返し形成されることを特徴とする請求項1に記載の半導体発光素子。 - 前記発光構造物が、前記P型半導体層からN型半導体層の一部までメサエッチングされた形状であることを特徴とする請求項1または2に記載の半導体発光素子。
- 基板上に、N型半導体層、活性層、及びP型半導体層が順次積層された発光構造物を形成する工程と、
前記基板方向または前記発光構造物方向から点線状の分割溝を形成する工程と、
前記基板と前記発光構造体のうち少なくとも一つに圧力を加え、前記分割溝を基準にして前記基板及び前記発光構造物を分割する工程と、を含む半導体発光素子の製造方法。 - 前記分割溝を形成する工程が、レーザで行われることを特徴とする請求項4に記載の半導体発光素子の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080124903A KR101123010B1 (ko) | 2008-12-09 | 2008-12-09 | 반도체 발광소자 및 그 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010141331A true JP2010141331A (ja) | 2010-06-24 |
Family
ID=42230081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009279526A Pending JP2010141331A (ja) | 2008-12-09 | 2009-12-09 | 半導体発光素子及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8242514B2 (ja) |
JP (1) | JP2010141331A (ja) |
KR (1) | KR101123010B1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8729585B2 (en) | 2011-07-14 | 2014-05-20 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
US9466763B2 (en) | 2013-09-03 | 2016-10-11 | Sharp Kabushiki Kaisha | Semiconductor light-emitting element |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD847102S1 (en) | 2013-02-08 | 2019-04-30 | Epistar Corporation | Light emitting diode |
TWD161897S (zh) * | 2013-02-08 | 2014-07-21 | 晶元光電股份有限公司 | 發光二極體之部分 |
USD778847S1 (en) * | 2014-12-15 | 2017-02-14 | Kingbright Electronics Co. Ltd. | LED component |
USD778846S1 (en) * | 2014-12-15 | 2017-02-14 | Kingbright Electronics Co. Ltd. | LED component |
USD1000400S1 (en) * | 2021-04-16 | 2023-10-03 | Creeled, Inc. | Light emitting diode package |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004006662A (ja) * | 2002-03-28 | 2004-01-08 | Nichia Chem Ind Ltd | 窒化ガリウム系化合物半導体素子 |
JP2005303286A (ja) * | 2004-03-19 | 2005-10-27 | Showa Denko Kk | 化合物半導体発光素子およびその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050049730A (ko) | 2003-11-24 | 2005-05-27 | 엘지이노텍 주식회사 | 반도체 발광소자 |
JP2005268329A (ja) | 2004-03-16 | 2005-09-29 | Daido Steel Co Ltd | 半導体発光素子 |
JP2005327979A (ja) * | 2004-05-17 | 2005-11-24 | Toshiba Corp | 半導体発光素子および半導体発光装置 |
KR100780175B1 (ko) * | 2006-03-14 | 2007-11-27 | 삼성전기주식회사 | 발광 다이오드의 제조방법 |
-
2008
- 2008-12-09 KR KR1020080124903A patent/KR101123010B1/ko active IP Right Grant
-
2009
- 2009-12-09 JP JP2009279526A patent/JP2010141331A/ja active Pending
- 2009-12-09 US US12/634,120 patent/US8242514B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004006662A (ja) * | 2002-03-28 | 2004-01-08 | Nichia Chem Ind Ltd | 窒化ガリウム系化合物半導体素子 |
JP2005303286A (ja) * | 2004-03-19 | 2005-10-27 | Showa Denko Kk | 化合物半導体発光素子およびその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8729585B2 (en) | 2011-07-14 | 2014-05-20 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
US9466763B2 (en) | 2013-09-03 | 2016-10-11 | Sharp Kabushiki Kaisha | Semiconductor light-emitting element |
US9818911B2 (en) | 2013-09-03 | 2017-11-14 | Sharp Kabushiki Kaisha | Semiconductor light-emitting element |
Also Published As
Publication number | Publication date |
---|---|
US8242514B2 (en) | 2012-08-14 |
US20100140647A1 (en) | 2010-06-10 |
KR20100066209A (ko) | 2010-06-17 |
KR101123010B1 (ko) | 2012-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8847199B2 (en) | Nanorod light emitting device and method of manufacturing the same | |
JP5450776B2 (ja) | 超格子構造のウェル層及び/又は超格子構造のバリア層を有する発光ダイオード | |
JP5391469B2 (ja) | 窒化物半導体発光素子およびその製造方法 | |
KR100631414B1 (ko) | 반도체 발광 다이오드 및 그 제조방법 | |
JP5165702B2 (ja) | 窒化物半導体発光素子 | |
JP2007294972A (ja) | 発光素子及びその製造方法 | |
JP2012256918A (ja) | 窒化物系半導体発光素子及びその製造方法 | |
JP2007116158A (ja) | 窒化物系半導体発光素子 | |
KR20100095134A (ko) | 발광소자 및 그 제조방법 | |
JP2010141331A (ja) | 半導体発光素子及びその製造方法 | |
JP2008047859A (ja) | 窒化物半導体発光素子 | |
KR20130042784A (ko) | 질화물 반도체 발광소자 | |
JP2005268601A (ja) | 化合物半導体発光素子 | |
KR20120055391A (ko) | 나노로드 발광소자 | |
US7572653B2 (en) | Method of fabricating light emitting diode | |
KR20080030404A (ko) | 발광 다이오드 칩 제조방법 | |
KR20110084683A (ko) | 양자우물 구조의 활성 영역을 갖는 발광 소자 | |
KR20100049451A (ko) | 질화물 반도체 소자 | |
JP2012009864A (ja) | 半導体発光素子 | |
KR20070025030A (ko) | 발광 소자 및 이의 제조 방법 | |
JP2010141332A (ja) | 半導体発光素子 | |
KR101862407B1 (ko) | 질화물계 반도체 발광소자 및 그 제조방법 | |
KR20110093006A (ko) | 질화물 반도체 발광소자 | |
KR100712890B1 (ko) | 발광소자와 그 제조방법 | |
KR100661606B1 (ko) | 질화물 반도체 소자 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20100930 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101021 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20101029 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20110114 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20120813 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121204 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140415 |