JP2003518767A - 電子ビーム放射を利用してスピンオン誘電体被膜を硬化する方法 - Google Patents

電子ビーム放射を利用してスピンオン誘電体被膜を硬化する方法

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Publication number
JP2003518767A
JP2003518767A JP2001548425A JP2001548425A JP2003518767A JP 2003518767 A JP2003518767 A JP 2003518767A JP 2001548425 A JP2001548425 A JP 2001548425A JP 2001548425 A JP2001548425 A JP 2001548425A JP 2003518767 A JP2003518767 A JP 2003518767A
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JP
Japan
Prior art keywords
layer
spin
electron beam
electron
glass
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2001548425A
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English (en)
Japanese (ja)
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JP2003518767A5 (https=
Inventor
アール リブセイ ウイリアム
イー ロス マシュー
エル ルビアレス アンソニー
トンプソン ヘーク
ウォン セルマー
マーロウ トレイ
ナーシー マーク
Original Assignee
エレクトロン ビジョン コーポレーション
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Application filed by エレクトロン ビジョン コーポレーション filed Critical エレクトロン ビジョン コーポレーション
Publication of JP2003518767A publication Critical patent/JP2003518767A/ja
Publication of JP2003518767A5 publication Critical patent/JP2003518767A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6539—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2001548425A 1999-12-29 2000-12-29 電子ビーム放射を利用してスピンオン誘電体被膜を硬化する方法 Pending JP2003518767A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/474,399 1999-12-29
US09/474,399 US6607991B1 (en) 1995-05-08 1999-12-29 Method for curing spin-on dielectric films utilizing electron beam radiation
PCT/US2000/035639 WO2001048805A1 (en) 1999-12-29 2000-12-29 Method for curing spin-on dielectric films utilizing electron beam radiation

Publications (2)

Publication Number Publication Date
JP2003518767A true JP2003518767A (ja) 2003-06-10
JP2003518767A5 JP2003518767A5 (https=) 2008-02-28

Family

ID=23883362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001548425A Pending JP2003518767A (ja) 1999-12-29 2000-12-29 電子ビーム放射を利用してスピンオン誘電体被膜を硬化する方法

Country Status (4)

Country Link
US (1) US6607991B1 (https=)
JP (1) JP2003518767A (https=)
KR (1) KR100773305B1 (https=)
WO (1) WO2001048805A1 (https=)

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US7372052B2 (en) * 2001-06-28 2008-05-13 C-Beam & Light, Inc. Electron beam method and apparatus for reducing or patterning the birefringence of halogenated optical materials
US7253425B2 (en) * 2001-06-28 2007-08-07 E-Beam & Light, Inc. Method and apparatus for forming optical elements by inducing changes in the index of refraction by utilizing electron beam radiation
US20060011863A1 (en) * 2001-06-28 2006-01-19 E-Beam & Light, Inc. Electron beam method and apparatus for improved melt point temperatures and optical clarity of halogenated optical materials
US7546016B2 (en) * 2001-06-28 2009-06-09 E-Beam & Light, Inc. Optical elements formed by inducing changes in the index of refraction by utilizing electron beam radiation
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US6936551B2 (en) 2002-05-08 2005-08-30 Applied Materials Inc. Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
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JP4372442B2 (ja) * 2003-03-28 2009-11-25 東京エレクトロン株式会社 電子ビーム処理方法及び電子ビーム処理装置
US6693050B1 (en) * 2003-05-06 2004-02-17 Applied Materials Inc. Gapfill process using a combination of spin-on-glass deposition and chemical vapor deposition techniques
US6878644B2 (en) * 2003-05-06 2005-04-12 Applied Materials, Inc. Multistep cure technique for spin-on-glass films
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JP4160489B2 (ja) * 2003-10-31 2008-10-01 株式会社東芝 半導体装置の製造方法
US7049612B2 (en) * 2004-03-02 2006-05-23 Applied Materials Electron beam treatment apparatus
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US7611996B2 (en) * 2004-03-31 2009-11-03 Applied Materials, Inc. Multi-stage curing of low K nano-porous films
US20050227502A1 (en) * 2004-04-12 2005-10-13 Applied Materials, Inc. Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity
US7018941B2 (en) 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
US7384693B2 (en) * 2004-04-28 2008-06-10 Intel Corporation Diamond-like carbon films with low dielectric constant and high mechanical strength
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
US7422776B2 (en) * 2004-08-24 2008-09-09 Applied Materials, Inc. Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD)
US20060099827A1 (en) * 2004-11-05 2006-05-11 Yoo Woo S Photo-enhanced UV treatment of dielectric films
US20070026690A1 (en) * 2004-11-05 2007-02-01 Yoo Woo S Selective frequency UV heating of films
US7588803B2 (en) * 2005-02-01 2009-09-15 Applied Materials, Inc. Multi step ebeam process for modifying dielectric materials
JP2007019161A (ja) * 2005-07-06 2007-01-25 Dainippon Screen Mfg Co Ltd パターン形成方法及び被膜形成装置
US20070059922A1 (en) * 2005-09-13 2007-03-15 International Business Machines Corporation Post-etch removal of fluorocarbon-based residues from a hybrid dielectric structure
US7678586B2 (en) * 2005-12-08 2010-03-16 Chartered Semiconductor Manufacturing, Ltd. Structure and method to prevent charge damage from e-beam curing process
US7407736B2 (en) * 2006-01-31 2008-08-05 International Business Machines Corporation Methods of improving single layer resist patterning scheme
US7730516B2 (en) 2007-02-27 2010-06-01 Sony Corporation TV-centric system
KR100909757B1 (ko) * 2007-10-31 2009-07-29 주식회사 하이닉스반도체 반도체 소자의 층간절연막 형성 방법
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8795952B2 (en) 2010-02-21 2014-08-05 Tokyo Electron Limited Line pattern collapse mitigation through gap-fill material application
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US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
KR102511272B1 (ko) 2018-02-23 2023-03-16 삼성전자주식회사 노광 장치 및 이를 이용하는 반도체 장치의 제조 방법
TWI894152B (zh) 2019-07-02 2025-08-21 美商應用材料股份有限公司 形成積體電路結構的方法、整合系統與電腦可讀媒介
KR102898764B1 (ko) 2019-08-16 2025-12-10 도쿄엘렉트론가부시키가이샤 확률 중심 결함 교정을 위한 방법 및 공정
CN116656050B (zh) * 2023-07-18 2023-10-20 河南华佳新材料技术有限公司 一种光伏用聚丙烯金属化膜及其制备方法

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JP2007510311A (ja) * 2003-10-30 2007-04-19 アプライド　マテリアルズ　インコーポレイテッド 電子ビーム処理装置

Also Published As

Publication number Publication date
WO2001048805A1 (en) 2001-07-05
KR20020063923A (ko) 2002-08-05
KR100773305B1 (ko) 2007-11-06
US6607991B1 (en) 2003-08-19

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