KR100773305B1 - 전자빔 방사를 이용하여 스핀-온 유전막을 경화하는 방법 - Google Patents

전자빔 방사를 이용하여 스핀-온 유전막을 경화하는 방법 Download PDF

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KR100773305B1
KR100773305B1 KR1020027008481A KR20027008481A KR100773305B1 KR 100773305 B1 KR100773305 B1 KR 100773305B1 KR 1020027008481 A KR1020027008481 A KR 1020027008481A KR 20027008481 A KR20027008481 A KR 20027008481A KR 100773305 B1 KR100773305 B1 KR 100773305B1
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layer
spin
electron beam
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glass
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KR20020063923A (ko
Inventor
리브세이윌리엄알
로즈매튜이
루비아레즈안소니엘
톰프손헤이케
웡셀머
말로우에트레이
낼시마크
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일랙트론 비젼 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6539—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020027008481A 1999-12-29 2000-12-29 전자빔 방사를 이용하여 스핀-온 유전막을 경화하는 방법 Expired - Fee Related KR100773305B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/474,399 1999-12-29
US09/474,399 US6607991B1 (en) 1995-05-08 1999-12-29 Method for curing spin-on dielectric films utilizing electron beam radiation

Publications (2)

Publication Number Publication Date
KR20020063923A KR20020063923A (ko) 2002-08-05
KR100773305B1 true KR100773305B1 (ko) 2007-11-06

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Country Link
US (1) US6607991B1 (https=)
JP (1) JP2003518767A (https=)
KR (1) KR100773305B1 (https=)
WO (1) WO2001048805A1 (https=)

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US7253425B2 (en) * 2001-06-28 2007-08-07 E-Beam & Light, Inc. Method and apparatus for forming optical elements by inducing changes in the index of refraction by utilizing electron beam radiation
US20060011863A1 (en) * 2001-06-28 2006-01-19 E-Beam & Light, Inc. Electron beam method and apparatus for improved melt point temperatures and optical clarity of halogenated optical materials
US7546016B2 (en) * 2001-06-28 2009-06-09 E-Beam & Light, Inc. Optical elements formed by inducing changes in the index of refraction by utilizing electron beam radiation
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US7060330B2 (en) 2002-05-08 2006-06-13 Applied Materials, Inc. Method for forming ultra low k films using electron beam
US6936551B2 (en) 2002-05-08 2005-08-30 Applied Materials Inc. Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
US6831284B2 (en) * 2002-11-21 2004-12-14 Applied Materials, Inc. Large area source for uniform electron beam generation
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US6693050B1 (en) * 2003-05-06 2004-02-17 Applied Materials Inc. Gapfill process using a combination of spin-on-glass deposition and chemical vapor deposition techniques
US6878644B2 (en) * 2003-05-06 2005-04-12 Applied Materials, Inc. Multistep cure technique for spin-on-glass films
KR100673884B1 (ko) * 2003-09-22 2007-01-25 주식회사 하이닉스반도체 습식 세정에 의한 어택을 방지할 수 있는 반도체 장치제조 방법
US7049606B2 (en) * 2003-10-30 2006-05-23 Applied Materials, Inc. Electron beam treatment apparatus
JP4160489B2 (ja) * 2003-10-31 2008-10-01 株式会社東芝 半導体装置の製造方法
US7049612B2 (en) * 2004-03-02 2006-05-23 Applied Materials Electron beam treatment apparatus
US20050224722A1 (en) * 2004-03-30 2005-10-13 Applied Materials, Inc. Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to large area electron beam
US7611996B2 (en) * 2004-03-31 2009-11-03 Applied Materials, Inc. Multi-stage curing of low K nano-porous films
US20050227502A1 (en) * 2004-04-12 2005-10-13 Applied Materials, Inc. Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity
US7018941B2 (en) 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
US7384693B2 (en) * 2004-04-28 2008-06-10 Intel Corporation Diamond-like carbon films with low dielectric constant and high mechanical strength
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
US7422776B2 (en) * 2004-08-24 2008-09-09 Applied Materials, Inc. Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD)
US20060099827A1 (en) * 2004-11-05 2006-05-11 Yoo Woo S Photo-enhanced UV treatment of dielectric films
US20070026690A1 (en) * 2004-11-05 2007-02-01 Yoo Woo S Selective frequency UV heating of films
US7588803B2 (en) * 2005-02-01 2009-09-15 Applied Materials, Inc. Multi step ebeam process for modifying dielectric materials
JP2007019161A (ja) * 2005-07-06 2007-01-25 Dainippon Screen Mfg Co Ltd パターン形成方法及び被膜形成装置
US20070059922A1 (en) * 2005-09-13 2007-03-15 International Business Machines Corporation Post-etch removal of fluorocarbon-based residues from a hybrid dielectric structure
US7678586B2 (en) * 2005-12-08 2010-03-16 Chartered Semiconductor Manufacturing, Ltd. Structure and method to prevent charge damage from e-beam curing process
US7407736B2 (en) * 2006-01-31 2008-08-05 International Business Machines Corporation Methods of improving single layer resist patterning scheme
US7730516B2 (en) 2007-02-27 2010-06-01 Sony Corporation TV-centric system
KR100909757B1 (ko) * 2007-10-31 2009-07-29 주식회사 하이닉스반도체 반도체 소자의 층간절연막 형성 방법
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8795952B2 (en) 2010-02-21 2014-08-05 Tokyo Electron Limited Line pattern collapse mitigation through gap-fill material application
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
KR102511272B1 (ko) 2018-02-23 2023-03-16 삼성전자주식회사 노광 장치 및 이를 이용하는 반도체 장치의 제조 방법
TWI894152B (zh) 2019-07-02 2025-08-21 美商應用材料股份有限公司 形成積體電路結構的方法、整合系統與電腦可讀媒介
KR102898764B1 (ko) 2019-08-16 2025-12-10 도쿄엘렉트론가부시키가이샤 확률 중심 결함 교정을 위한 방법 및 공정
CN116656050B (zh) * 2023-07-18 2023-10-20 河南华佳新材料技术有限公司 一种光伏用聚丙烯金属化膜及其制备方法

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WO2001048805A1 (en) 2001-07-05
KR20020063923A (ko) 2002-08-05
US6607991B1 (en) 2003-08-19

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