JP2003518316A - 放電ランプ光源装置及び方法 - Google Patents
放電ランプ光源装置及び方法Info
- Publication number
- JP2003518316A JP2003518316A JP2000526942A JP2000526942A JP2003518316A JP 2003518316 A JP2003518316 A JP 2003518316A JP 2000526942 A JP2000526942 A JP 2000526942A JP 2000526942 A JP2000526942 A JP 2000526942A JP 2003518316 A JP2003518316 A JP 2003518316A
- Authority
- JP
- Japan
- Prior art keywords
- capillary
- light source
- discharge
- operating
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000007789 gas Substances 0.000 claims description 100
- 229910052744 lithium Inorganic materials 0.000 claims description 35
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical group [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 239000011148 porous material Substances 0.000 claims description 24
- 230000005855 radiation Effects 0.000 claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- 239000000872 buffer Substances 0.000 claims description 14
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 11
- 230000006378 damage Effects 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 10
- 229910052724 xenon Inorganic materials 0.000 claims description 10
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 239000001307 helium Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000012811 non-conductive material Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910000833 kovar Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 239000013626 chemical specie Substances 0.000 claims description 2
- 238000011109 contamination Methods 0.000 claims description 2
- 230000000977 initiatory effect Effects 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 230000008093 supporting effect Effects 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000007781 pre-processing Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 abstract description 9
- 238000001393 microlithography Methods 0.000 abstract description 4
- 208000028659 discharge Diseases 0.000 description 109
- 239000011799 hole material Substances 0.000 description 57
- 239000000463 material Substances 0.000 description 21
- 210000002381 plasma Anatomy 0.000 description 18
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 16
- 241000894007 species Species 0.000 description 15
- 230000003628 erosive effect Effects 0.000 description 14
- 230000004907 flux Effects 0.000 description 14
- 239000000919 ceramic Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 210000005239 tubule Anatomy 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 230000036961 partial effect Effects 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 230000035939 shock Effects 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000005305 interferometry Methods 0.000 description 3
- 238000000386 microscopy Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004660 morphological change Effects 0.000 description 2
- 230000007170 pathology Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 208000011738 Lichen planopilaris Diseases 0.000 description 1
- 241000321453 Paranthias colonus Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000012984 biological imaging Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 235000011194 food seasoning agent Nutrition 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 150000002641 lithium Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004452 microanalysis Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 208000011797 pustulosis palmaris et plantaris Diseases 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- CCEKAJIANROZEO-UHFFFAOYSA-N sulfluramid Chemical group CCNS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CCEKAJIANROZEO-UHFFFAOYSA-N 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/002—Supply of the plasma generating material
- H05G2/0023—Constructional details of the ejection system
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/10—Arrangements of light sources specially adapted for spectrometry or colorimetry
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70016—Production of exposure light, i.e. light sources by discharge lamps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/12—Selection of substances for gas fillings; Specified operating pressure or temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/24—Means for obtaining or maintaining the desired pressure within the vessel
- H01J61/28—Means for producing, introducing, or replenishing gas or vapour during operation of the lamp
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/30—Vessels; Containers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
- H05G2/0035—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state the material containing metals as principal radiation-generating components
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Plasma Technology (AREA)
- X-Ray Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/001,696 | 1997-12-31 | ||
| US09/001,696 US6031241A (en) | 1997-03-11 | 1997-12-31 | Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications |
| PCT/US1998/027522 WO1999034395A1 (en) | 1997-12-31 | 1998-12-28 | Discharge lamp sources apparatus and methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003518316A true JP2003518316A (ja) | 2003-06-03 |
| JP2003518316A5 JP2003518316A5 (enExample) | 2006-02-09 |
Family
ID=21697361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000526942A Pending JP2003518316A (ja) | 1997-12-31 | 1998-12-28 | 放電ランプ光源装置及び方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6031241A (enExample) |
| EP (1) | EP1051727A4 (enExample) |
| JP (1) | JP2003518316A (enExample) |
| CN (1) | CN1134043C (enExample) |
| AU (1) | AU1946599A (enExample) |
| CA (1) | CA2315740C (enExample) |
| WO (1) | WO1999034395A1 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004172626A (ja) * | 2002-11-21 | 2004-06-17 | Asml Holding Nv | リソグラフィー装置中の主要室ガスから光源ガスを分離する装置および方法 |
| JP2007502000A (ja) * | 2003-08-12 | 2007-02-01 | イェーノプティーク ミクロテヒニーク ゲゼルシャフト ミット ベシュレンクテル ハフツング | プラズマ放射線源およびプラズマ放射線源用のガスカーテンを形成するための装置 |
| JP2007501997A (ja) * | 2003-08-07 | 2007-02-01 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 極紫外線及び軟ｘ線発生器 |
| JP2009500624A (ja) * | 2005-07-08 | 2009-01-08 | サイマー インコーポレイテッド | Ｅｕｖ光源測定のためのシステム及び方法 |
Families Citing this family (126)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6031241A (en) * | 1997-03-11 | 2000-02-29 | University Of Central Florida | Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications |
| US6232613B1 (en) * | 1997-03-11 | 2001-05-15 | University Of Central Florida | Debris blocker/collector and emission enhancer for discharge sources |
| US6744060B2 (en) | 1997-05-12 | 2004-06-01 | Cymer, Inc. | Pulse power system for extreme ultraviolet and x-ray sources |
| US6586757B2 (en) | 1997-05-12 | 2003-07-01 | Cymer, Inc. | Plasma focus light source with active and buffer gas control |
| US6815700B2 (en) | 1997-05-12 | 2004-11-09 | Cymer, Inc. | Plasma focus light source with improved pulse power system |
| US6566667B1 (en) | 1997-05-12 | 2003-05-20 | Cymer, Inc. | Plasma focus light source with improved pulse power system |
| US6452199B1 (en) * | 1997-05-12 | 2002-09-17 | Cymer, Inc. | Plasma focus high energy photon source with blast shield |
| DE19962160C2 (de) * | 1999-06-29 | 2003-11-13 | Fraunhofer Ges Forschung | Vorrichtungen zur Erzeugung von Extrem-Ultraviolett- und weicher Röntgenstrahlung aus einer Gasentladung |
| US6455846B1 (en) * | 1999-10-14 | 2002-09-24 | Battelle Memorial Institute | Sample inlet tube for ion source |
| US6469310B1 (en) | 1999-12-17 | 2002-10-22 | Asml Netherlands B.V. | Radiation source for extreme ultraviolet radiation, e.g. for use in lithographic projection apparatus |
| TWI246872B (en) * | 1999-12-17 | 2006-01-01 | Asml Netherlands Bv | Radiation source for use in lithographic projection apparatus |
| US6419821B1 (en) * | 2000-02-25 | 2002-07-16 | Waterhealth International, Inc. | Apparatus for low cost water disinfection |
| US6972421B2 (en) * | 2000-06-09 | 2005-12-06 | Cymer, Inc. | Extreme ultraviolet light source |
| US7180081B2 (en) * | 2000-06-09 | 2007-02-20 | Cymer, Inc. | Discharge produced plasma EUV light source |
| US6356618B1 (en) | 2000-06-13 | 2002-03-12 | Euv Llc | Extreme-UV electrical discharge source |
| US6791555B1 (en) * | 2000-06-23 | 2004-09-14 | Micron Technology, Inc. | Apparatus and method for distributed memory control in a graphics processing system |
| TW518913B (en) * | 2000-07-03 | 2003-01-21 | Asml Netherlands Bv | Radiation source, lithographic apparatus, and semiconductor device manufacturing method |
| RU2206186C2 (ru) | 2000-07-04 | 2003-06-10 | Государственный научный центр Российской Федерации Троицкий институт инновационных и термоядерных исследований | Способ получения коротковолнового излучения из газоразрядной плазмы и устройство для его реализации |
| US6711233B2 (en) | 2000-07-28 | 2004-03-23 | Jettec Ab | Method and apparatus for generating X-ray or EUV radiation |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2004172626A (ja) * | 2002-11-21 | 2004-06-17 | Asml Holding Nv | リソグラフィー装置中の主要室ガスから光源ガスを分離する装置および方法 |
| JP2007501997A (ja) * | 2003-08-07 | 2007-02-01 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 極紫外線及び軟ｘ線発生器 |
| JP4814093B2 (ja) * | 2003-08-07 | 2011-11-09 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 極紫外線及び軟ｘ線発生器 |
| JP2007502000A (ja) * | 2003-08-12 | 2007-02-01 | イェーノプティーク ミクロテヒニーク ゲゼルシャフト ミット ベシュレンクテル ハフツング | プラズマ放射線源およびプラズマ放射線源用のガスカーテンを形成するための装置 |
| JP4766695B2 (ja) * | 2003-08-12 | 2011-09-07 | イクストリーメ テクノロジース ゲゼルシャフト ミット ベシュレンクテル ハフツング | プラズマ放射線源、ガスカーテンを生成するための装置および気体ジェット真空ポンプ |
| JP2009500624A (ja) * | 2005-07-08 | 2009-01-08 | サイマー インコーポレイテッド | Ｅｕｖ光源測定のためのシステム及び方法 |
| JP2012054580A (ja) * | 2005-07-08 | 2012-03-15 | Cymer Inc | Ｅｕｖ光源測定のためのシステム及び方法 |
| JP4913808B2 (ja) * | 2005-07-08 | 2012-04-11 | サイマー インコーポレイテッド | Ｅｕｖ光源測定のためのシステム及び方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1051727A1 (en) | 2000-11-15 |
| CN1306673A (zh) | 2001-08-01 |
| US6188076B1 (en) | 2001-02-13 |
| CA2315740A1 (en) | 1999-07-08 |
| WO1999034395A1 (en) | 1999-07-08 |
| CN1134043C (zh) | 2004-01-07 |
| EP1051727A4 (en) | 2004-11-10 |
| CA2315740C (en) | 2004-07-20 |
| AU1946599A (en) | 1999-07-19 |
| US6031241A (en) | 2000-02-29 |
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