JP2003338516A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JP2003338516A
JP2003338516A JP2002145333A JP2002145333A JP2003338516A JP 2003338516 A JP2003338516 A JP 2003338516A JP 2002145333 A JP2002145333 A JP 2002145333A JP 2002145333 A JP2002145333 A JP 2002145333A JP 2003338516 A JP2003338516 A JP 2003338516A
Authority
JP
Japan
Prior art keywords
film
plating
electrode
semiconductor device
plating solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002145333A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003338516A5 (https=
Inventor
Yoshihiko Nemoto
義彦 根本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2002145333A priority Critical patent/JP2003338516A/ja
Priority to US10/303,737 priority patent/US6686660B2/en
Priority to DE10261460A priority patent/DE10261460A1/de
Priority to KR10-2003-0005706A priority patent/KR100503940B1/ko
Publication of JP2003338516A publication Critical patent/JP2003338516A/ja
Publication of JP2003338516A5 publication Critical patent/JP2003338516A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor

Landscapes

  • Chemically Coating (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2002145333A 2002-05-20 2002-05-20 半導体装置およびその製造方法 Pending JP2003338516A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002145333A JP2003338516A (ja) 2002-05-20 2002-05-20 半導体装置およびその製造方法
US10/303,737 US6686660B2 (en) 2002-05-20 2002-11-26 Semiconductor device
DE10261460A DE10261460A1 (de) 2002-05-20 2002-12-31 Halbleitervorrichtung
KR10-2003-0005706A KR100503940B1 (ko) 2002-05-20 2003-01-29 반도체장치 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002145333A JP2003338516A (ja) 2002-05-20 2002-05-20 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2003338516A true JP2003338516A (ja) 2003-11-28
JP2003338516A5 JP2003338516A5 (https=) 2005-09-29

Family

ID=29417113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002145333A Pending JP2003338516A (ja) 2002-05-20 2002-05-20 半導体装置およびその製造方法

Country Status (4)

Country Link
US (1) US6686660B2 (https=)
JP (1) JP2003338516A (https=)
KR (1) KR100503940B1 (https=)
DE (1) DE10261460A1 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006057360A1 (ja) * 2004-11-25 2006-06-01 Nec Corporation 半導体装置及びその製造方法、配線基板及びその製造方法、半導体パッケージ並びに電子機器
WO2015107796A1 (ja) * 2014-01-20 2015-07-23 三菱電機株式会社 半導体素子およびその製造方法、ならびに半導体装置
JP2016086069A (ja) * 2014-10-24 2016-05-19 三菱電機株式会社 半導体素子および半導体装置
EP3151272A1 (en) 2015-09-30 2017-04-05 Renesas Electronics Corporation Semiconductor device and method of manufacturing semiconductor device
JP2018137290A (ja) * 2017-02-20 2018-08-30 トヨタ自動車株式会社 半導体装置
US10998257B2 (en) 2019-03-11 2021-05-04 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing same

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005265720A (ja) * 2004-03-19 2005-09-29 Nec Corp 電気接点構造及びその形成方法と素子検査方法
US8653657B2 (en) * 2005-08-23 2014-02-18 Rohm Co., Ltd. Semiconductor chip, method of manufacturing semiconductor chip, and semiconductor device
JP2007184381A (ja) * 2006-01-06 2007-07-19 Matsushita Electric Ind Co Ltd フリップチップ実装用回路基板とその製造方法、並びに半導体装置とその製造方法
JP2007243031A (ja) * 2006-03-10 2007-09-20 Seiko Epson Corp 配線基板の製造方法
KR100771675B1 (ko) * 2006-03-30 2007-11-01 엘지전자 주식회사 패키지용 인쇄회로기판 및 그 제조방법
US7538429B2 (en) * 2006-08-21 2009-05-26 Intel Corporation Method of enabling solder deposition on a substrate and electronic package formed thereby
US20080136019A1 (en) * 2006-12-11 2008-06-12 Johnson Michael E Solder Bump/Under Bump Metallurgy Structure for High Temperature Applications
US8555494B2 (en) * 2007-10-01 2013-10-15 Intel Corporation Method of manufacturing coreless substrate
US8058726B1 (en) 2008-05-07 2011-11-15 Amkor Technology, Inc. Semiconductor device having redistribution layer
US9543262B1 (en) 2009-08-18 2017-01-10 Cypress Semiconductor Corporation Self aligned bump passivation
US8455361B2 (en) * 2010-01-07 2013-06-04 Texas Instruments Incorporated Electroless plating of porous and non-porous nickel layers, and gold layer in semiconductor device
US8362612B1 (en) 2010-03-19 2013-01-29 Amkor Technology, Inc. Semiconductor device and manufacturing method thereof
US8552557B1 (en) 2011-12-15 2013-10-08 Amkor Technology, Inc. Electronic component package fabrication method and structure
US8664090B1 (en) 2012-04-16 2014-03-04 Amkor Technology, Inc. Electronic component package fabrication method
US9245862B1 (en) 2013-02-12 2016-01-26 Amkor Technology, Inc. Electronic component package fabrication method and structure
US12417971B2 (en) * 2021-11-22 2025-09-16 Samsung Electronics Co., Ltd. Semiconductor package with multilayer bonding pads

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02276249A (ja) 1989-04-18 1990-11-13 Seiko Epson Corp 半導体回路バンプの製造方法
US5656858A (en) * 1994-10-19 1997-08-12 Nippondenso Co., Ltd. Semiconductor device with bump structure
JPH1140745A (ja) 1997-07-17 1999-02-12 Hitachi Ltd 半導体装置およびその半導体装置を組み込んだ電子装置
JPH11214421A (ja) 1997-10-13 1999-08-06 Matsushita Electric Ind Co Ltd 半導体素子の電極形成方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006057360A1 (ja) * 2004-11-25 2006-06-01 Nec Corporation 半導体装置及びその製造方法、配線基板及びその製造方法、半導体パッケージ並びに電子機器
WO2015107796A1 (ja) * 2014-01-20 2015-07-23 三菱電機株式会社 半導体素子およびその製造方法、ならびに半導体装置
JP2016086069A (ja) * 2014-10-24 2016-05-19 三菱電機株式会社 半導体素子および半導体装置
EP3151272A1 (en) 2015-09-30 2017-04-05 Renesas Electronics Corporation Semiconductor device and method of manufacturing semiconductor device
KR20170038645A (ko) 2015-09-30 2017-04-07 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 반도체 장치의 제조 방법
US9922928B2 (en) 2015-09-30 2018-03-20 Renesas Electronics Corporation Semiconductor device and method of manufacturing semiconductor device
JP2018137290A (ja) * 2017-02-20 2018-08-30 トヨタ自動車株式会社 半導体装置
US10998257B2 (en) 2019-03-11 2021-05-04 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing same

Also Published As

Publication number Publication date
KR20030090489A (ko) 2003-11-28
US20030214038A1 (en) 2003-11-20
KR100503940B1 (ko) 2005-07-26
US6686660B2 (en) 2004-02-03
DE10261460A1 (de) 2003-12-11

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