JP2003335922A - Sealant resin composition and resin-sealed semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sealant resin composition having excellent shading property, high insulating property, low electrostatic property and good fluidity, and to provide a resin-sealed semiconductor device by using the composition. <P>SOLUTION: This sealant resin composition is obtained by incorporating (A) an epoxy resin, (B) a phenol resin-curing agent, (C) an inorganic filler and (D) a black pigment comprising a metal oxide e.g. a pigment comprising a Cu-Cr-based complex metal oxide and/or a Cu-Cr-Mn-based complex metal oxide, and the resin-sealed semiconductor device is obtained by using the sealant resin composition. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sealing resin composition used as a sealing material for a semiconductor device, and a semiconductor device using the same.

[0002]

2. Description of the Related Art Integrated circuits (ICs), large scale integrated circuits (LS
I), as a sealing material for semiconductor devices such as transistors,
A composition based on an epoxy resin, in which a curing agent, a curing accelerator, an inorganic filler such as silica powder, a colorant for imparting a light-shielding property, and the like are mixed, is known. Carbon black, which is known as a typical black pigment, has been generally used as a colorant.

[0003]

However, although carbon black is excellent in coloring property, it has conductivity, and its particle size is relatively large and poor in dispersibility, so that short circuit between wirings in a semiconductor device is prevented. There was a difficulty that it was easily caused.

Therefore, there is a demand for a resin composition for encapsulation which has a sufficient light-shielding property and has a high insulating property without fear of short-circuiting between wirings. In particular, recently, the wiring interval has become narrower with the high-density mounting of semiconductor devices, and therefore, there is an increasing demand for such a sealing resin composition having high insulation properties.

Further, the encapsulating resin composition is required to have low chargeability and excellent fluidity in addition to the above-mentioned light-shielding property and insulating property. The conventional encapsulating resin composition was somewhat insufficient in terms of charging property.

The present invention has been made in consideration of such a conventional situation, and has an excellent light-shielding property, a high insulating property, a low charging property, and a good fluidity. An object of the present invention is to provide a resin composition for use and a resin-encapsulated semiconductor device using the same.

[0007]

Means for Solving the Problems The inventors of the present invention have conducted extensive studies to achieve the above object, and as a result, by using a black pigment composed of a metal oxide as a coloring component, excellent light-shielding properties can be obtained. It was found that the insulating property and the low electrification property can be improved while having the above, and the present invention has been completed.

That is, the encapsulating resin composition of the present invention is
(A) Epoxy resin, (B) Phenolic resin curing agent,
It is characterized by containing (C) an inorganic filler and (D) a black pigment composed of a metal oxide.

Here, the black pigment as the component (D) may be a black pigment composed of two or more kinds of metal oxides selected from the group of copper, chromium and manganese. Further, the black pigment of the component (D) is a copper-chromium-based composite metal oxide and /
Alternatively, a black pigment made of a copper-chromium-manganese-based mixed metal oxide may be used.

Further, the average particle size of the above metal oxide or composite metal oxide may be 0.5 to 2 μm.

Further, the content of the inorganic filler of the component (D) is
It may be 25 to 95% by weight.

In the encapsulating resin composition of the present invention, a black pigment made of a metal oxide is blended, so that it has excellent light-shielding properties and fluidity, and is sufficiently compatible with recent high-density mounting. It can have a high insulating property and a low charging property.

Further, the resin-sealed semiconductor device of the present invention is
A semiconductor element is sealed with a cured product of the sealing resin composition of the present invention.

In the resin-encapsulated semiconductor device of the present invention, a semiconductor element is encapsulated by a cured product of an encapsulating resin composition having excellent light-shielding properties and fluidity, and having high insulation properties and low electrostatic properties. Therefore, it has high reliability without insulation failure between wirings.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below. The encapsulating resin composition of the present invention contains (A) an epoxy resin, (B) a phenol resin curing agent, (C) an inorganic filler, and (D) a black pigment composed of a metal oxide as essential components. is there.

As the epoxy resin (A), as long as it has two or more epoxy groups in one molecule, generally used resins can be widely used without being limited by the molecular structure, the molecular weight and the like. it can. Specific examples thereof include phenol novolac type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, dicyclopentadiene type epoxy resin, triphenolmethane type epoxy resin, alicyclic epoxy resin, heterocyclic epoxy resin, bisphenol. Examples thereof include A-type epoxy resins, bisphenol F-type epoxy resins, stilbene-type epoxy resins, polyfunctional epoxy resins, condensed ring aromatic hydrocarbon-modified epoxy resins, and the like. These epoxy resins may be used alone or in combination of two or more. In the present invention, it is preferable to use various novolac type epoxy resins, biphenyl type epoxy resins and polyfunctional type epoxy resins.

As the phenol resin curing agent (B),
As long as it has two or more phenolic hydroxyl groups capable of reacting the epoxy groups of the epoxy resin (A) in the molecule,
It is used without particular limitation. Specific examples thereof include phenol novolac resin, cresol novolac resin, dicyclopentadiene modified phenol resin, paraxylene modified phenol resin, condensate of phenols with benzaldehyde and naphthyl aldehyde, triphenol methane compound, polyfunctional phenol resin. And alicyclic phenol resins. These may be used alone or in combination of two or more. In the present invention, it is preferable to use a phenol novolac resin, a cresol novolac resin and a polyfunctional phenol resin.

The mixing ratio of the epoxy resin (A) and the phenol resin curing agent (B) is such that the epoxy group (a) of the epoxy resin (A) and the phenolic hydroxyl group of the phenol resin curing agent (B) are Equivalent ratio of (b) (a) /
The range of (b) is preferably 0.1 to 2.0, and more preferably 0.5 to 1.5. Particularly preferably 0.7 to 1.3
Is the range. When the equivalent ratio (a) / (b) is less than 0.1 or exceeds 2.0, heat resistance, moisture resistance, molding workability,
The electrical properties and the like of the cured product deteriorate.

The inorganic filler (C) is added for the purpose of improving and improving the properties such as the thermal expansion coefficient, thermal conductivity, water absorption and elastic modulus of the cured product. Fused silica and crystalline silica. , Alumina, clay, talc, mica, calcium carbonate, titanium oxide, barium sulfate, zinc oxide, red iron oxide, silicon carbide, boron nitride, and the like, spherical beads, single crystal fibers, glass fibers, and the like. These can be used alone or in combination of two or more. The inorganic filler (C) is preferably in the form of powder having a maximum particle size of 100 μm or less and an average particle size of 1 to 50 μm, and a maximum particle size of 75 μm or less and an average particle size of 5 to 25 μm. More preferable. Whether the maximum particle size exceeds 100 μm,
Alternatively, when the average particle size exceeds 50 μm, not only filling of the narrow portion becomes difficult, but also the dispersibility decreases and the molded product becomes non-uniform. On the other hand, if the average particle size is less than 1 μm, the viscosity increases and the moldability becomes poor.

The compounding amount of the inorganic filler (C) is preferably in the range of 25 to 95% by weight based on the whole composition. The range is more preferably 50 to 93% by weight, and particularly preferably 70 to 91% by weight. If the blending amount is less than 25% by weight, the effect of improving and improving the properties such as the thermal expansion coefficient is small,
On the other hand, if the blending amount exceeds 95% by weight, the fluidity of the composition decreases, the moldability becomes poor, and practical application becomes difficult. Also,
The electrical characteristics also deteriorate.

Examples of the black pigment composed of the metal oxide (D) include black pigments composed of two or more kinds of metal oxides selected from the group consisting of copper, chromium and manganese. From the viewpoints of properties, chargeability, etc., it is preferable to use a copper-chromium-based composite metal oxide, a copper-chromium-manganese-based composite metal oxide, or a mixture thereof.

The average particle size of the black pigment composed of this metal oxide is preferably 0.5 to 2 μm, and 1.0 to 1.5 μm.
Is more preferable. If the average particle size is less than 0.5 μm,
There is a possibility that the dispersibility becomes too high, the color of the molded product becomes light, and sufficient light shielding properties cannot be obtained. On the contrary, even if the average particle diameter exceeds 2 μm, the light-shielding property may not be sufficiently obtained due to the decrease in dispersibility.

The black pigment composed of the metal oxide preferably has a content of coarse particles having a particle size of 3 μm or more of 2% by weight or less, more preferably 0.5% by weight or less. If the content of coarse particles having a particle size of 3 μm or more is more than 2% by weight, the amount of electrification locally increases, and a short circuit between wirings easily occurs.

The amount of the black pigment as the component (D) is preferably 0.1 to 2% by weight based on the total weight of the composition. It is more preferably in the range of 0.2 to 1% by weight, and particularly preferably in the range of 0.2 to 0.5% by weight. If the blending amount is less than 0.1% by weight,
If the blending amount exceeds 2% by weight, on the other hand, there is a possibility that the coloring power is lowered and the light-shielding property is not sufficiently obtained.

In the encapsulating resin composition of the present invention, in addition to the above-mentioned respective components, a curing accelerator, carbon black, and Colorants such as cobalt blue, amine-modified silicone oil, epoxy-modified silicone oil, silane coupling agents such as epoxysilane, aminosilane, alkylsilane, vinylsilane, surface treatment agents such as alkyl titanate, synthetic wax, natural wax, esters, A releasing agent such as a straight-chain aliphatic compound, a halogen trapping agent, a low-stressing agent such as silicone oil or silicone rubber, and the like can be added as necessary.

As the curing accelerator, 1,8-diazabicyclo
[5,4,0] Undecene-7 (DBU), triethylenediamine, benzyldimethylamine, triethanolamine,
Tertiary amines such as dimethylaminoethanol, tris (dimethylaminomethyl) phenol, imidazoles such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, tributylphosphine, diphenylphosphine, triphenylphosphine Examples thereof include organic phosphines, tetraphenylphosphonium tetraphenylborate, tetraphenylboron salts such as triphenylphosphine tetraphenylborate, and the like. These can be used alone or in combination of two or more. In the present invention, the use of imidazoles is preferred.

In preparing the encapsulating resin composition of the present invention, the above components are thoroughly mixed (dry blended) with a mixer or the like, then melt-kneaded with a hot roll or kneader, and cooled and then ground. You can do this.

The resin-encapsulated semiconductor device of the present invention can be manufactured by encapsulating a semiconductor element using the encapsulating resin composition described above. Examples of applicable semiconductor devices include integrated circuits, large-scale integrated circuits, transistors, thyristors, and diodes. Although a low-pressure transfer method is generally used as a sealing method, injection molding, compression molding, casting or the like can also be used for sealing. After encapsulating with the encapsulating resin composition, it is heated and cured, and finally a resin-encapsulated semiconductor device encapsulated by the cured product is obtained. The heating temperature for post-curing is 150 ° C.
The above is preferable.

[0029]

EXAMPLES Next, the present invention will be described in more detail by way of examples, but the present invention is not limited to these examples.

Examples 1 to 4 and Comparative Examples 1 to 5 epoxy resin and phenol resin curing agents shown below,
As a black pigment, chromium-copper-manganese mixed metal oxide pigment (trade name: 0-B, manufactured by Nippon Frit Co., Ltd .; 65 wt% chromium oxide, 33 wt% copper oxide, 2 wt% manganese oxide;
Coarse particles with an average particle size of 1.2 μm, a particle size of 2 μm or more and 3 μm or less 0
% By weight) and carbon black (trade name MA-600 manufactured by Mitsubishi Chemical Co., Ltd.), spherical fused silica powder (average particle size 20 μm, specific surface area 4800 cm ² / cm ³ ) and crushed fused silica powder (average particle size 20 μm) as an inorganic filler. , Specific surface area 6300 cm ² / c
m ³ ), an imidazole type curing accelerator as a curing accelerator (trade name C11ZA manufactured by Shikoku Kasei Co., Ltd.), and a carnauba wax as a release agent (trade name carnauba 1 manufactured by Nikko Fine Chemical Co., Ltd.).
No.), antimony trioxide as a flame retardant aid, a silane coupling agent (product name A-187 manufactured by Nippon Unicar Co., Ltd.),
The encapsulating resin composition having the composition shown in Table 1 was produced by an ordinary method. That is, after mixing each component at room temperature,
The mixture was heated and kneaded with a roll mill at 5 ° C., cooled, and then pulverized into a suitable size to produce a sealing resin composition. Epoxy resin A: Polyfunctional epoxy resin (Nippon Kayaku Co., Ltd. trade name NC-7000 epoxy equivalent 210) Epoxy resin B: Novolac epoxy resin (Sumitomo Chemical Co., Ltd. trade name ESCN-195XL epoxy equivalent 198) Phenolic resin curing agent A : Polyfunctional phenol resin (Meiwa Kasei Co., Ltd., trade name MEH-7500, hydroxyl equivalent 97) Phenolic resin curing agent B: Novolac type phenol resin (Meiwa Kasei Co., Ltd., trade name THE-1000, hydroxyl equivalent 104)

Various characteristics of the encapsulating resin compositions obtained in each of the above Examples and Comparative Examples were evaluated by the following methods. [Fluidity] A flow tester CFT-500 manufactured by Shimadzu Co., Ltd. was used to measure the Koka flow viscosity under the conditions of 175 ° C. and a load of 10 kg. [Coloring property] The encapsulating resin composition was transfer-molded at 175 ° C for 120 seconds, and then post-cured at 175 ° C for 8 hours to prepare a test body (3 cm x 3 cm x 3 mm), which was manufactured by Minolta. The color difference L value was measured by a color difference meter CR-300 manufactured by K.K. [Electrical characteristics] Transfer molding of the encapsulating resin composition into a sheet of 2.5 cm × 2.5 cm × 3 mm at 175 ° C for 120 seconds, and immediately after opening the mold, SIMCO's electrostatic charge measuring device FMX- 0
The charge amount of the molded product was measured with 02.

The results are also shown in Table 1.

[Table 1]

As is clear from Table 1, the encapsulating resin compositions of the respective examples had good fluidity, colorability and electrical characteristics.

[0034]

As described above, according to the present invention,
Since a black pigment composed of a metal oxide is contained, a resin composition for sealing which is excellent in light-shielding property and fluidity, and also has good electrical properties such as insulating property and chargeability, and a high resin composition using the same. It is possible to obtain a reliable resin-sealed semiconductor device.

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) C09K 3/10 C09K 3/10 Z H01L 23/29 H01L 23/30 R 23/31 F term (reference) 4H017 AA04 AA24 AA26 AB08 AC03 AD06 AE05 4J002 CC04X CC06X CD02W CD03W CD05W CD06W CD07W CE00X DE097 DE116 DE136 DE146 DE236 DG046 DJ006 DJ016 DJ036 DJ046 DJ056 JA01 FA0 A4 FA0A4 FD006 FD0F07FD01 FD0 FA046 FD006 FA046 FA086 FD016 FD090 AFD EA02 EB03 EB08 EB12 EC07 EC12

Claims (6)

[Claims] 1. A resin composition for encapsulation containing (A) an epoxy resin, (B) a phenol resin curing agent, (C) an inorganic filler, and (D) a black pigment composed of a metal oxide. object. 2. The encapsulation according to claim 1, wherein the component (D) black pigment is a black pigment composed of two or more kinds of metal oxides selected from the group consisting of copper, chromium and manganese. Resin composition. 3. The black pigment of component (D) is a black pigment composed of a copper-chromium-based composite metal oxide and / or a copper-chromium-manganese-based composite metal oxide. The encapsulating resin composition of. 4. The average particle size of the metal oxide or the composite metal oxide is 0.5 to 2 μm.
4. The encapsulating resin composition according to any one of items 1 to 3. 5. The content of the inorganic filler as the component (C) is 25 to
The encapsulating resin composition according to claim 1, wherein the encapsulating resin composition is 95% by weight. 6. A resin-encapsulated semiconductor device, wherein a semiconductor element is encapsulated with the cured product of the encapsulating resin composition according to any one of claims 1 to 5.