JP2001240724A - Epoxy resin composition and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor-sealing epoxy resin composition capable of giving a cured product excellent in hot strengths and soldering resistance. SOLUTION: This composition consists essentially of (A) an epoxy resin, (B) a phenolic resin, (C) a polyether-group-containing silane coupling agent or a hydrolyzate obtained by at least partially hydrolyzing the silane coupling agent, (D) an inorganic filler, and (E) a cure accelerator.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation having excellent solder resistance and a semiconductor device using the same.

[0002]

2. Description of the Related Art Transfer molding of an epoxy resin composition is suitable as a method for encapsulating semiconductor elements such as ICs and LSIs at a low cost and suitable for mass production. The phenol resin has been improved to improve the characteristics. However, in recent market trends of miniaturization, weight reduction, and high performance of electronic equipment, semiconductor integration has been progressing year by year, and surface mounting of semiconductor devices has been promoted. The demands on the composition are becoming increasingly demanding.
For this reason, a problem which cannot be solved by the conventional epoxy resin composition has come out. The biggest problem is that semiconductor devices are exposed to high temperatures of 200 ° C or more in the solder immersion or reflow process due to the adoption of surface mounting. This is a phenomenon in which cracks are generated and peeling occurs at the interface between the various bonded portions on the semiconductor element, the lead frame, and the inner leads and the cured product of the resin composition, and the reliability is significantly reduced.

[0003] In order to improve the reliability reduction due to soldering, the amount of the inorganic filler in the epoxy resin composition is increased to achieve low moisture absorption, high strength, and low thermal expansion, thereby improving solder resistance. A method of improving the flowability and maintaining low viscosity and high fluidity during molding by using a resin having a low melt viscosity is becoming common. On the other hand, the adhesiveness of the interface between a cured product of an epoxy resin composition and a substrate such as a semiconductor element or a lead frame existing inside a semiconductor device has become very important in reliability by soldering. If the adhesive force at the interface is weak, peeling occurs at the interface with the base material after the soldering, and further, cracks occur in the semiconductor device due to the peeling. Conventionally, coupling agents such as γ-glycidoxypropyltrimethoxysilane and γ-aminopropyltriethoxysilane have been added to epoxy resin compositions for the purpose of improving solder resistance. However, these coupling agents have not been able to adequately cope with increasingly strict requirements for solder resistance in recent years.

[0004]

SUMMARY OF THE INVENTION The present invention provides an epoxy resin composition and a semiconductor device which are excellent in soldering resistance in which a cured semiconductor device does not crack or peel off from a substrate in a soldering process after absorbing moisture. Is what you do.

[0005]

The present invention relates to (A) an epoxy resin, (B) a phenolic resin, (C) a silane coupling agent represented by the general formula (1), or all or all of the silane coupling agents. An epoxy resin composition for semiconductor encapsulation comprising, as essential components, a hydrolyzate obtained by partially hydrolyzing, (D) an inorganic filler, and (E) a curing accelerator, and using the same. A semiconductor device in which a semiconductor element is sealed.

Embedded image (R ₁ is an alkoxy group having 1 to 10 carbon atoms, R ₂ is an alkoxy group having 1 carbon atom
An alkyl group having 10 to 10 or an alkoxy group having 1 to 10 carbon atoms. R ₃ is an alkylene group having 1 to 10 carbon atoms. R ₄ is a glycidyl ether group, mercapto group, amino group, vinyl group, acryl group or methacryl group.
m is an average of 1 to 3 positive numbers, and n + q is an average of 1 to 10
Is a positive number. )

[0006]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail.
Silane coupling of general formula (1) used in the present invention
The agent has a polyether-modified part in the molecule.
More, the compatibility with the resin is improved and in the epoxy resin composition
Since the dispersibility of the silane coupling agent is improved,
It has the characteristics of improving the degree of soldering and improving the solder resistance. one
R in general formula (1)₁Is an alkoxy group having 1 to 10 carbon atoms
However, since hydrolysis occurs relatively easily,
A di- or ethoxy group is preferred. R_TwoHas 1 to 10 carbon atoms
Is an alkoxy group or an alkyl group,
The methoxy or ethoxy group improves adhesion.
Is preferred. R_ThreeIs alkylene having 1 to 10 carbon atoms
General but easy to obtain
No. R _FourIs a glycidyl ether group, mercapto group,
From vinyl, vinyl, acrylic, or methacrylic groups.
Organic functional group. R_FourIs an organic officer as described above
Any type of functional group may be used, but it can react with organic substances.
Those containing an amino group with excellent heat resistance, especially for improving solder resistance
It is effective for. m is an average and a positive number of 1 to 3
Is a silanol group generated by hydrolysis of an alkoxy group
Reactivity and Compatibility with Resin of Polyether-Modified Part
From the point of view, the average value of m is 1.2 to 2.0.
This is preferable from the viewpoint of improving the properties. n + q is 1 to 10 on average
May be a positive number, but as the number of n and q increases,
The viscosity increases. In such cases, silane coupling
Dissolved in alcohol etc. in advance to adjust the viscosity
May be. Hereinafter, the silane cap represented by the general formula (1)
Specific examples of the pulling agent are shown, but are not limited thereto.
is not.

Embedded image (N + q is 5 on average)

The silane coupling agent represented by the general formula (1) used in the present invention may be used in combination with another silane coupling agent. Examples of the coupling agent that can be used in combination include an alkoxysilyl group and a silane compound having an organic functional group such as an epoxy group in one molecule.
γ-aminopropyltriethoxysilane, N-β (aminoethyl) -γ-aminopropyltrimethoxysilane,
Silane having an amino group such as N-phenyl-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxy Silane having an epoxy group such as silane, silane having a mercapto group such as γ-mercaptopropyltrimethoxysilane, silane having a vinyl group such as vinyltrimethoxysilane, and methacryl group such as γ- (methacryloxypropyl) trimethoxysilane And the like, but are not limited thereto.

In the silane coupling agent represented by the general formula (1), a hydrolyzate obtained by previously hydrolyzing part or all of an alkoxy group may be added to the epoxy resin composition. In this case, since the alkoxy group has been hydrolyzed in advance, it is possible to easily form a hydrogen bond or a covalent bond with a hydroxyl group on the surface of the inorganic filler or various base materials, thereby improving the solder resistance. Usually, the silane coupling agent is
The silane coupling agent represented by the general formula (1) or a hydrolyzate obtained by hydrolyzing all or a part of the silane coupling agent is mixed in the epoxy resin composition by integral blending. May be heated and mixed in advance with all or part of the epoxy resin or phenol resin. The silane coupling agent is also effective for improving the affinity at the interface between the various base materials present inside the semiconductor device and the cured product of the resin composition and improving the interfacial adhesion by forming a chemical bond. By using a silane coupling agent obtained by heating and mixing the resin in advance, it becomes easy to efficiently transfer to the interface with various base materials at the time of molding the epoxy resin composition. The silane coupling agent may be mixed in advance with all of the epoxy resin or phenol resin by heating, or may be mixed with some of the epoxy resin or phenol resin by heating.

On the other hand, the presence of the silane coupling agent on the surface of the inorganic filler is considered to be effective for chemically bonding the inorganic filler to the organic component in the epoxy resin composition and improving the interfacial adhesion. . As described above, in order to improve the interfacial adhesion between the inorganic filler and the organic component, the silane coupling agent needs to be present on the surface of the inorganic filler. Therefore, the silane coupling agent represented by the general formula (1) is required. By treating the surface of the inorganic filler with a ring agent, or a hydrolyzate obtained by hydrolyzing all or a part of the silane coupling agent, the adhesiveness at the interface is improved, and the strength when heated. And an effect of improving solder resistance. As a method of treating the surface of the inorganic filler with a silane coupling agent, a silane coupling agent or an alcohol solution thereof is sprayed on the stirred inorganic filler, and further stirred, and then left at room temperature, Alternatively, the surface-treated inorganic filler can be obtained by heating. In addition to the surface-treated silane coupling agent, a method in which the silane coupling agent is mixed with an integral blend or a resin in advance by heating may be used in combination.

The epoxy resin used in the present invention refers to all monomers, oligomers and polymers having an epoxy group. Examples thereof include biphenyl type epoxy resins, bisphenol type epoxy resins, stilbene type epoxy resins, and hydroquinone type epoxy resins. Epoxy resin, phenol aralkyl type epoxy resin, bisphenol A
Type epoxy resin, orthocresol novolak type epoxy resin, dicyclopentadiene-modified phenol type epoxy resin, triphenolmethane type epoxy resin, naphthol type epoxy resin, etc., among them, the filling amount of inorganic filler can be increased. Crystalline epoxy resins are preferred. These may be used alone or as a mixture.

Various resins can be used as the crystalline epoxy resin for use in the present invention.
C. or lower is preferred. If the temperature exceeds 150 ° C., the resin composition does not melt sufficiently during melt-kneading and cannot be uniformly dispersed, so that a molded product of the resin composition using the molten mixture becomes non-uniform, and the strength of each part is different, so that the performance of the semiconductor device is reduced. Is not preferred. Examples of the crystalline epoxy resin satisfying these conditions include a biphenyl type epoxy resin of the general formula (2), a bisphenol type epoxy resin of the general formula (3), and a stilbene type epoxy resin of the general formula (4). .

Embedded image (R ₅ is an alkyl group having 1 to 6 carbon atoms, which may be the same or different; m is an integer of 0 to 4)

[0012]

Embedded image

[0013]

Embedded image (R ₈ is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, which may be the same or different. R ₉ has 1 carbon atom.
And up to 6 alkyl groups, which may be the same or different. )

The biphenyl type epoxy resin represented by the general formula (3) includes, for example, 4,4'-dihydroxybiphenyl, 4,4'-dihydroxy-3,3 ', 5,5'-tetramethylbiphenyl, 4,4 '-Dihydroxy-3,
3′-ditert-butyl-6,6′-dimethylbiphenyl, 2,2′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylbiphenyl, 4,4′-
Dihydroxy-3,3'-ditert-butyl-5,
Glycidyl etherified products of 5′-dimethylbiphenyl or 4,4′-dihydroxy-3,3 ′, 5,5′-tetratert-butylbiphenyl (including isomers having different substitution positions) are exemplified.

Examples of the bisphenol type epoxy resin represented by the general formula (4) include bis (4-hydroxyphenyl) methane, bis (3-methyl-4-hydroxyphenyl) methane, bis (3,5-dimethyl-4-) Hydroxyphenyl) methane, bis (2,3,5-trimethyl-4)
-Hydroxyphenyl) methane, 1,1-bis (3 ′,
5'-dimethyl-4'-hydroxyphenyl) ethane,
2,2-bis (4′-hydroxyphenyl) propane,
2,2-bis (3′-methyl-4′-hydroxyphenyl) propane, 2,2-bis (3 ′, 5′-dimethyl-)
4'-hydroxyphenyl) propane, 2,2-bis (3'-tert-butyl-4'-hydroxyphenyl) propane, or bis (2-tert-butyl-5-
Glycidyl ether compounds such as methyl-4-hydroxyphenyl) sulfide.

Examples of the stilbene type epoxy resin represented by the general formula (5) include, for example, 3-tert-butyl-4,4'-
Dihydroxy-5,3'-dimethylstilbene, 3-tert-butyl-4,4'-dihydroxy-3 ', 6-
Dimethyl stilbene, 3-tert-butyl-2,4 '
-Dihydroxy-3 ', 5', 6-trimethylstilbene, 3-tert-butyl-4,4'-dihydroxy-
3 ′, 5 ′, 6-trimethylstilbene, 3-tert-butyl-4,4′-dihydroxy-3 ′, 5,5′-
Trimethylstilbene, 4,4'-dihydroxy-3,
3'-dimethylstilbene, 4,4'-dihydroxy-
3,3 ′, 5,5′-tetramethylstilbene, 4,
4'-dihydroxy-3,3'-ditertiarybutylstilbene, 4,4'-dihydroxy-3,3'-ditertiarybutyl-6,6'-dimethylstilbene, 2,
2'-dihydroxy-3,3'-ditert-butyl-
6,6′-dimethylstilbene, 2,4′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylstilbene, 2,2′-dihydroxy-3,3 ′,
5,5'-tetramethylstilbene, 4,4'-dihydroxy-3,3'-ditert-butyl-5,5'-dimethylstilbene, or 4,4'-dihydroxy-3,
Glycidyl ether compounds such as 3 ′, 5,5′-tetratert-butylstilbene (including isomers having different substitution positions) are exemplified.

Of these, 4,4'-dihydroxybiphenyl, 4,4'-dihydroxy-3,3 ', 5,5'-tetramethyl are preferred in terms of availability, performance, raw material price and the like. Biphenyl, bis (3,5-dimethyl-4-
Hydroxyphenyl) methane, bis (2,3,5-trimethyl-4-hydroxyphenyl) methane, 2,2-bis (3′-methyl-4′-hydroxyphenyl) propane, 2,2-bis (3 ′, 5'-dimethyl-4'-hydroxyphenyl) propane, glycidyl etherified bis (2-tert-butyl-5-methyl-4-hydroxyphenyl) sulfide (the above seven epoxy resins are hereinafter referred to as group a); 3-tert-butyl-2,
4'-dihydroxy-3 ', 5', 6-trimethylstilbene, 3-tert-butyl-4,4'-dihydroxy-3 ', 5', 6-trimethylstilbene, 3-tert-butyl-4,4 ' -Dihydroxy-3 ', 5
Glycidyl etherified product of 5′-trimethylstilbene (the above three types of epoxy resins are hereinafter referred to as group b), 4,
4′-dihydroxy-3,3 ′, 5,5′-tetramethylstilbene, 4,4′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylstilbene,
2,2′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylstilbene, 2,4′-dihydroxy-3,3′-di-tert-butyl-6,6′-dimethylstilbene, 2, 2'-dihydroxy-3,
3 ', 5,5'-tetramethylstilbene, or 4,
4'-dihydroxy-3,3'-ditert-butyl-
One or more selected from glycidyl etherified products of 5,5′-dimethylstilbene (the above six types of epoxy resins are hereinafter referred to as group c) are preferred.

Among the group a, the biphenyl type epoxy resin has a high viscosity lowering effect and a high reactivity of 4,4 '.
Those containing a skeleton of -dihydroxybiphenyl are preferred. In other group a, bis (3,5-dimethyl-4-hydroxyphenyl) methane, 2,2-bis (3 ′, 5′-dimethyl-4′-hydroxyphenyl)
Propane, bis (2-tert-butyl-5-methyl-
Glycidyl etherified products of 4-hydroxyphenyl) sulfide are particularly preferred. In the stilbene type epoxy resin, a mixture of at least one selected from the group b and at least one selected from the group c is preferable because the melting point is low. The mixing ratio, mixing method, and the like are not particularly limited. For example, there is a method of mixing stilbene-type phenols, which are raw materials of the stilbene-type epoxy resin, before glycidyl etherification, or a method of melt-mixing both stilbene-type epoxy resins. Also, to improve the moisture resistance reliability,
It is desirable that the amount of chlorine ions, sodium ions, and other free ions contained in the crystalline epoxy resin used in the present invention is as small as possible.

The phenolic resin used in the present invention includes all monomers, oligomers and polymers having a phenolic hydroxyl group in the molecule, such as phenol novolak resin, cresol novolak resin, terpene-modified phenol resin, and dicyclopentadiene-modified phenol. Examples include, but are not limited to, resins, triphenolmethane type resins, phenol aralkyl resins, and the like. These phenol resins may be used alone or as a mixture. The equivalent ratio of the epoxy group of all epoxy resins to the phenolic hydroxyl group of all phenol resins is preferably 0.5 to 2.0, particularly preferably 0.7 to 1.5. If the ratio is outside the range of 0.5 to 2.0, the curability, the moisture resistance reliability and the like are undesirably reduced.

The type of the inorganic filler used in the present invention is not particularly limited, and those generally used for a sealing material can be used. For example, fused crushed silica, fused spherical silica, crystalline silica, secondary aggregated silica, alumina, titanium white, aluminum hydroxide and the like can be mentioned, and fused spherical silica is particularly preferred. The shape is preferably infinitely spherical, and the filling amount can be increased by mixing particles having different particle sizes. The blending amount of the inorganic filler is preferably from 75 to 94% by weight in the entire epoxy resin composition. If the amount is less than 75% by weight, the reinforcing effect of the inorganic filler is not sufficiently exhibited, and the amount of the resin component which is a factor of moisture absorption increases, so that the amount of moisture absorption of the cured product of the epoxy resin composition increases. This is not preferable because cracks tend to occur in the semiconductor device during the soldering process. If the content exceeds 94% by weight, the fluidity of the epoxy resin composition is lowered, and poor filling, chip shift, pad shift, and wire sweep are likely to occur during molding, which is not preferable. The inorganic filler used in the present invention may be used by previously treating the inorganic filler with a silane coupling agent or an epoxy resin or a phenol resin, if necessary, and as a treatment method, mixed using a solvent. Later, there are a method of removing the solvent, a method of directly adding the solvent to the inorganic filler, and treating using a mixer.

The curing accelerator used in the present invention includes:
Any compound that promotes a crosslinking reaction between the epoxy resin and the phenol resin may be used. For example, amine compounds such as 1,8-diazabicyclo (5,4,0) undecene-7;
Organophosphorus compounds such as triphenylphosphine, tetraphenylphosphonium and tetraphenylborate salts,
Examples include imidazole compounds such as 2-methylimidazole, but are not limited thereto. These curing accelerators may be used alone or as a mixture.

The epoxy resin composition of the present invention comprises (A)
In addition to the component (E), if necessary, brominated epoxy resins, antimony oxide, flame retardants such as phosphorus compounds, inorganic ion exchangers such as bismuth oxide hydrate, coloring agents such as carbon black and red iron oxide, silicone oil, Various additives such as a low-stress agent such as silicone rubber, a release agent such as natural wax, synthetic wax, higher fatty acid and its metal salts or paraffin, and an antioxidant can be blended. The epoxy resin composition of the present invention is obtained by mixing components (A) to (E) and other additives using a mixer,
It is obtained by melt-kneading with a kneader such as a heating kneader or an extruder, cooling and pulverizing. In order to manufacture a semiconductor device by encapsulating an electronic component such as a semiconductor element using the epoxy resin composition of the present invention, it is sufficient to cure and mold by a molding method such as a transfer mold, a compression mold, and an injection mold.

Hereinafter, the present invention will be described specifically with reference to Examples, but the present invention is not limited thereto. The mixing unit is parts by weight. Example 1 Biphenyl type epoxy resin having a structure of formula (5) as a main component (epoxy equivalent: 190, melting point: 105 ° C.) 6.2 parts by weight Phenolic resin of formula (6) (hydroxyl equivalent: 174, softening point: 75 ° C.) 5.7 parts by weight Silane coupling agent of formula (7) (n + q is 5 on average, hereinafter abbreviated as silane coupling agent A) 0.4 parts by weight Fused spherical silica powder 87.0 parts by weight 1,8- 0.2 parts by weight of diazabicyclo (5,4,0) undecene-7 (hereinafter abbreviated as DBU) 0.2 parts by weight of carnauba wax 0.3 parts by weight of carbon black were mixed using a mixer, and the surface temperature was 90 ° C. And 4
The mixture was kneaded 30 times using two rolls at 5 ° C., and the obtained kneaded material sheet was cooled and pulverized to obtain a resin composition. The obtained resin composition was evaluated by the following method. Table 1 shows the results.

Embedded image

[0024]

Embedded image

[0025]

Embedded image

Evaluation method Spiral flow: Using a mold for spiral flow measurement in accordance with EMMI-1-66, a mold temperature of 175 ° C.
The measurement was performed at an injection pressure of 70 kg / cm ² and a curing time of 2 minutes.
The unit is cm. Heat strength: Flexural strength at 240 ° C. is determined according to JIS K 691.
It measured according to 1. The unit is N / mm ² . Solder resistance: 100-pin TQFP (package size is 1
4 × 14 mm, thickness 1.4 mm, silicon chip size 8.0 × 8.0 mm, lead frame made of 42 alloy), mold temperature 175 ° C., injection pressure 75 kg / c
transfer molding with m ² , curing time 2 minutes, 175
Post-curing was performed at 8 ° C. for 8 hours. The obtained semiconductor package was placed in an environment of 85 ° C. and 85% relative humidity for 72 hours and 16 hours.
It was left for 8 hours and then immersed in a 240 ° C. solder bath for 10 seconds. Observe the external cracks with a microscope and check the number of cracks [(number of packages with cracks) / (total number of packages)
× 100] in%. The ratio of the peeling area between the chip and the cured product of the resin composition was measured using an ultrasonic flaw detector, and the peeling rate ((peeling area) / (chip area) × 100)
The average value of the five packages was determined and expressed in%.

Examples 2 to 8 and Comparative Examples 1 to 3 Each component was blended in the proportions shown in Table 1 to obtain a resin composition in the same manner as in Example 1, and evaluated in the same manner as in Example 1. Table 1 shows the results. The details of the epoxy resin, the phenol resin, the molten mixture, and the hydrolyzate of the silane coupling agent other than those used in Example 1 are shown below. Orthocresol novolak type epoxy resin (epoxy equivalent 19
6, a softening point of 55 ° C.) and a stilbene-type epoxy resin having a structure represented by the formula (8) as a main component (epoxy equivalent: 187, melting point: 1)
10 ° C), phenol novolak resin (hydroxyl equivalent 10
5, softening point 105 ° C).

Embedded image

Production Example of Hydrolyzate A The silane coupling agent A used in Example 1 and pure water were mixed in 8
The mixture was mixed at 0:20, and the mixture was sufficiently stirred and mixed until the mixture did not separate into two layers to obtain a hydrolyzate A. Production Example of Melt Mixture Melt Mixture A 6.2 parts by weight of the epoxy resin of the formula (5) used in Example 1 and 5.7 parts by weight of a phenol aralkyl resin were completely melt-mixed at 110 ° C. 0.4 part by weight of the silane coupling agent A used in 1 was added to obtain a molten mixture A. Melt mixture B. After completely melting 5.7 parts by weight of the phenol resin of the formula (6) used in Example 1 at 110 ° C., 0.2 part by weight of the silane coupling agent A used in Example 1 is added, and a molten mixture B is added. I got Production Example of Treated Silica Treated fused spherical silica A 0.4 parts by weight of the silane coupling agent A used in Example 1 was added dropwise while stirring 87 parts by weight of the fused spherical silica used in Example 1 with a mixer. . Continue stirring 15
After continuing for 2 minutes, the mixture was left at room temperature for 8 hours to obtain treated silica A. Treated fused spherical silica B While stirring 87 parts by weight of the fused spherical silica used in Example 1 with a mixer, 0.2 part by weight of the silane coupling agent A used in Example 1 was added dropwise. Continue stirring 15
After continuing for 2 minutes, the mixture was left at room temperature for 8 hours to obtain treated silica B.

[0029]

[Table 1]

[0030]

The semiconductor device obtained by using the epoxy resin composition of the present invention is excellent in strength at heat and solder resistance.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 23/31 F-term (Reference) 4J002 CC032 CC042 CC052 CC072 CD041 CD051 CD061 CD111 DE136 DE146 DJ016 EU097 EU117 EW127 EW177 EX018 EX038 EX068 EX078 EX088 EY017 FD016 FD070 FD130 FD142 FD157 FD160 FD200 GJ02 GQ05 4J036 AA02 AC01 AC02 AD04 AD07 AD08 AD10 AD13 AD20 AE05 AF06 AF08 DC05 DC09 DC40 DD07 FA03 FA05 FA13 FB07 GA04 GA06 JA07 4M109 AEB01 BA03 EC03

Claims (6)

[Claims] 1. A resin obtained by hydrolyzing (A) an epoxy resin, (B) a phenol resin, (C) a silane coupling agent represented by the general formula (1), or all or a part of the silane coupling agent. Hydrolyzate, (D) inorganic filler,
(E) An epoxy resin composition for semiconductor encapsulation, comprising a curing accelerator as an essential component. Embedded image (R ₁ is an alkoxy group having 1 to 10 carbon atoms, R ₂ is an alkoxy group having 1 carbon atom
An alkyl group having 10 to 10 or an alkoxy group having 1 to 10 carbon atoms. R ₃ is an alkylene group having 1 to 10 carbon atoms. R ₄ is a glycidyl ether group, mercapto group, amino group, vinyl group, acryl group or methacryl group.
m is an average of 1 to 3 positive numbers, and n + q is an average of 1 to 10
Is a positive number. ) 2. The semiconductor epoxy resin composition according to claim 1, wherein R _{4 of the} silane coupling agent represented by the general formula (1) is an amino group. 3. The method of claim 1, wherein (A) the epoxy resin is represented by the general formula (2):
The epoxy resin composition for semiconductor encapsulation according to claim 1 or 2, wherein the epoxy resin composition is at least one member selected from the general formula (3) or the general formula (4). Embedded image (R ₅ is an alkyl group having 1 to 6 carbon atoms, which may be the same or different, and m is an integer of 0 to 4). Embedded image (R ₈ is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, which may be the same or different. R ₉ has 1 carbon atom.
And up to 6 alkyl groups, which may be the same or different. m is an integer from 0 to 4) 4. The silane coupling agent represented by the general formula (1) or a hydrolyzate obtained by hydrolyzing all or a part of the silane coupling agent is (A) an epoxy resin or (B) 4. The epoxy resin composition for semiconductor encapsulation according to claim 1, which is preliminarily heated and mixed with all or a part of the phenol resin. 5. The silane coupling agent represented by the general formula (1), or a hydrolyzate obtained by hydrolyzing all or a part of the silane coupling agent, is prepared by adding (D) an inorganic filler in advance. The epoxy resin composition for semiconductor encapsulation according to claim 1, which is subjected to a surface treatment. 6. A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin composition for semiconductor encapsulation according to claim 1.