JP2001240725A - Epoxy resin composition and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an semiconductor-sealing epoxy resin composition capable of giving a cured product excellent in hot strengths and soldering resistance. SOLUTION: This composition consists essentially of (A) an epoxy resin, (B) a phenolic resin, (C) a polyethyleneimine-group-containing silane coupling agent or a hydrolyzate obtained by at least partially hydrolyzing the silane coupling agent, (D) an inorganic filler, and (E) a cure accelerator.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation having excellent solder resistance and a semiconductor device using the same.

[0002]

2. Description of the Related Art Transfer molding of an epoxy resin composition is suitable as a method for encapsulating semiconductor elements such as ICs and LSIs at a low cost and suitable for mass production. The phenol resin has been improved to improve the characteristics. However, in recent market trends of miniaturization, weight reduction, and high performance of electronic equipment, semiconductor integration has been progressing year by year, and surface mounting of semiconductor devices has been promoted. The demands on the composition are becoming increasingly demanding.
For this reason, a problem which cannot be solved by the conventional epoxy resin composition has come out. The biggest problem is that semiconductor devices are exposed to high temperatures of 200 ° C or more in the solder immersion or reflow process due to the adoption of surface mounting. This is a phenomenon in which cracks occur and peeling occurs at the interface between the various bonded portions on the semiconductor element, the lead frame, and the inner leads and the cured product of the resin composition, and the reliability is significantly reduced.

[0003] In order to improve the reliability reduction due to soldering, the amount of the inorganic filler in the epoxy resin composition is increased to achieve low moisture absorption, high strength, and low thermal expansion, thereby improving solder resistance. A method of improving the flowability and maintaining low viscosity and high fluidity during molding by using a resin having a low melt viscosity is becoming common. On the other hand, the adhesiveness at the interface between a cured product of an epoxy resin composition and a substrate such as a semiconductor element or a lead frame existing inside a semiconductor device has become very important in reliability by soldering. If the adhesive force at this interface is weak, peeling occurs at the interface with the substrate after the soldering, and further, cracks occur in the semiconductor device due to the peeling. Conventionally, coupling agents such as γ-glycidoxypropyltrimethoxysilane and γ-aminopropyltriethoxysilane have been added to epoxy resin compositions for the purpose of improving solder resistance. However, these coupling agents have not been able to sufficiently cope with increasingly severe requirements for solder resistance in recent years.

[0004]

SUMMARY OF THE INVENTION The present invention provides an epoxy resin composition and a semiconductor device which are excellent in soldering resistance and do not cause cracks or peeling from a substrate in a soldering process after moisture absorption. is there.

[0005]

The present invention relates to (A) an epoxy resin, (B) a phenolic resin, (C) a silane coupling agent represented by the general formula (1), or all or all of the silane coupling agents. An epoxy resin composition for encapsulating a semiconductor, comprising, as essential components, a hydrolyzate obtained by partially hydrolyzing, (D) an inorganic filler, and (E) a curing accelerator. A semiconductor device characterized in that a semiconductor element that has been sealed is sealed.

Embedded image (R ₁ is an alkoxy group having 1 to 10 carbon atoms, R ₂ is an alkoxy group having 1 carbon atom
It is an alkyl group having 10 to 10 carbon atoms. n is 1 to
An integer of 3. R ₃ represents a hydrogen atom, a phenyl group, a carbon number of 1 to 1
It is an alkyl group of 0 or an amino group. k is 1 on average
Is a positive number of 10 to 10, and m is an integer of 1 to 5. )

[0006]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail.
The silane coupling agent of the general formula (1) used in the present invention has a polyethyleneimine-modified part in the molecule, so that the reactivity with the resin is improved, and at the same time, the inorganic filler and the surface of various base materials are improved. Has a characteristic that the adhesive strength is increased by reacting with a hydroxyl group of the compound and the solder resistance is improved. R ₁ in the general formula (1) is an alkoxy group having 1 to 10 carbon atoms, but a methoxy group and an ethoxy group are preferable since hydrolysis occurs relatively easily. R ₂ has 1 to 1 carbon atoms
In an alkyl group of 10, n is an integer of 1 to 3, but n = 3 is most preferable because an alkoxy group improves adhesion to an inorganic filler and various substrates. Further, by adjusting the carbon number of the alkoxy group, the reactivity between the silane coupling agent and the resin or the inorganic filler can be adjusted.
m is an integer of 1 to 5, but m = 3 is generally used because it is easily available. k is a positive number of 1 to 10 on average, and as k increases, the viscosity of the silane coupling agent increases, and mixing may become uneven in the epoxy resin composition. May be used by dissolving a silane coupling agent in alcohol or the like in advance and adjusting the viscosity. Hereinafter, specific examples of the silane coupling agent represented by the general formula (1) will be shown, but the present invention is not limited thereto.

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The silane coupling agent represented by the general formula (1) used in the present invention may be used in combination with another silane coupling agent. Coupling agents that can be used in combination include all silane compounds having an alkoxysilyl group and an organic functional group such as an epoxy group in one molecule, for example, γ-aminopropyltriethoxysilane, N-β
(Aminoethyl) silane having an amino group such as γ-aminopropyltrimethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, β Silane having an epoxy group such as-(3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane,
Silanes having a vinyl group such as a mercapto group, silanes having a methacryl group such as γ- (methacryloxypropyl) trimethoxysilane, and the like, but are not limited thereto. Not something.

In the silane coupling agent represented by the general formula (1), a hydrolyzate obtained by previously hydrolyzing part or all of an alkoxy group may be added to the epoxy resin composition. In this case, since the alkoxy group has been hydrolyzed in advance, a hydrogen bond or a covalent bond can be easily formed with the inorganic filler or the hydroxyl group on the surface of each base material, and the solder resistance can be improved. Usually the coupling agent is
The silane coupling agent represented by the general formula (1) or a hydrolyzate obtained by hydrolyzing all or a part of the silane coupling agent is mixed in the epoxy resin composition by integral blending. May be heated and mixed in advance with all or part of the epoxy resin or phenol resin. The silane coupling agent is also effective for improving the affinity at the interface between the various base materials present inside the semiconductor device and the cured product of the resin composition and improving the interfacial adhesion by forming a chemical bond. By using a silane coupling agent that has been heated to a resin in advance, it becomes easy to efficiently transfer to the interface with various substrates during molding of the epoxy resin composition.
The silane coupling agent may be heated and mixed in advance with all epoxy resins and phenol resins, or may be heated and mixed with some epoxy resins or phenol resins.

On the other hand, the silane coupling agent, when present on the surface of the inorganic filler, chemically bonds the inorganic filler and the organic component in the epoxy resin composition, and is considered to be effective in improving the interfacial adhesion. Can be In order to improve the interfacial adhesion between the inorganic filler and the organic component as described above, the silane coupling agent needs to be present on the surface of the inorganic filler, and thus the silane coupling agent represented by the general formula (1) is required. By treating the surface of the inorganic filler with a coupling agent, or a hydrolyzate obtained by hydrolyzing all or a part of the silane coupling agent, the adhesiveness at the interface is improved, and the heat strength is improved. And an effect of improving solder resistance. As a method of treating the surface of the inorganic filler with a silane coupling agent, a solution of the silane coupling agent or an alcohol thereof is sprayed on the stirred inorganic filler, and after further stirring,
An inorganic filler surface-treated can be obtained by leaving it at room temperature or heating it. In addition to the surface-treated silane coupling agent, a method in which the silane coupling agent is mixed with an integral blend or a resin in advance by heating may be used in combination.

The epoxy resin used in the present invention refers to all monomers, oligomers and polymers having an epoxy group. Examples thereof include biphenyl type epoxy resins, bisphenol type epoxy resins, stilbene type epoxy resins, and hydroquinone type epoxy resins. Epoxy resin, phenol aralkyl type epoxy resin, bisphenol A
Type epoxy resin, orthocresol novolak type epoxy resin, dicyclopentadiene-modified phenol type epoxy resin, triphenolmethane type epoxy resin, naphthol type epoxy resin, etc., among them, the filling amount of inorganic filler can be increased. Crystalline epoxy resins are preferred. These may be used alone or as a mixture.

The crystalline epoxy resin used in the present invention includes various resins.
C. or lower is preferred. If the temperature exceeds 150 ° C., the resin composition does not melt sufficiently during melt-kneading and cannot be uniformly dispersed, so that a molded product of the resin composition using the molten mixture becomes non-uniform, and the strength of each part is different, so that the performance of the semiconductor device is reduced. Is not preferred. Examples of the crystalline epoxy resin satisfying these conditions include a biphenyl type epoxy resin of the general formula (2), a bisphenol type epoxy resin of the general formula (3), and a stilbene type epoxy resin of the general formula (4). .

Embedded image (R ₄ is an alkyl group having 1 to 6 carbon atoms, which may be the same or different; m is an integer of 0 to 4)

[0012]

Embedded image

[0013]

Embedded image (R ₇ is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, which may be the same or different. R ₈ has 1 carbon atom.
And up to 6 alkyl groups, which may be the same or different. m is an integer from 0 to 4)

The biphenyl type epoxy resin represented by the general formula (2) includes, for example, 4,4'-dihydroxybiphenyl, 4,4'-dihydroxy-3,3 ', 5,5'-tetramethylbiphenyl, 4,4 '-Dihydroxy-3,
3′-ditert-butyl-6,6′-dimethylbiphenyl, 2,2′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylbiphenyl, 4,4′-
Dihydroxy-3,3'-ditert-butyl-5,
Glycidyl etherified products of 5′-dimethylbiphenyl or 4,4′-dihydroxy-3,3 ′, 5,5′-tetratert-butylbiphenyl (including isomers having different substitution positions) are exemplified.

As the bisphenol type epoxy resin represented by the general formula (3), for example, bis (4-hydroxyphenyl) methane, bis (3-methyl-4-hydroxyphenyl) methane, bis (3,5-dimethyl-4-) Hydroxyphenyl) methane, bis (2,3,5-trimethyl-4)
-Hydroxyphenyl) methane, 1,1-bis (3 ′,
5'-dimethyl-4'-hydroxyphenyl) ethane,
2,2-bis (4′-hydroxyphenyl) propane,
2,2-bis (3′-methyl-4′-hydroxyphenyl) propane, 2,2-bis (3 ′, 5′-dimethyl-)
4'-hydroxyphenyl) propane, 2,2-bis (3'-tert-butyl-4'-hydroxyphenyl) propane, or bis (2-tert-butyl-5-
Glycidyl ether compounds such as methyl-4-hydroxyphenyl) sulfide.

The stilbene type epoxy resin represented by the general formula (4) includes, for example, 3-tert-butyl-4,4'-
Dihydroxy-5,3'-dimethylstilbene, 3-tert-butyl-4,4'-dihydroxy-3 ', 6-
Dimethyl stilbene, 3-tert-butyl-2,4 '
-Dihydroxy-3 ', 5', 6-trimethylstilbene, 3-tert-butyl-4,4'-dihydroxy-
3 ′, 5 ′, 6-trimethylstilbene, 3-tert-butyl-4,4′-dihydroxy-3 ′, 5,5′-
Trimethylstilbene, 4,4'-dihydroxy-3,
3'-dimethylstilbene, 4,4'-dihydroxy-
3,3 ′, 5,5′-tetramethylstilbene, 4,
4'-dihydroxy-3,3'-ditertiarybutylstilbene, 4,4'-dihydroxy-3,3'-ditertiarybutyl-6,6'-dimethylstilbene, 2,
2'-dihydroxy-3,3'-ditert-butyl-
6,6′-dimethylstilbene, 2,4′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylstilbene, 2,2′-dihydroxy-3,3 ′,
5,5'-tetramethylstilbene, 4,4'-dihydroxy-3,3'-ditert-butyl-5,5'-dimethylstilbene, or 4,4'-dihydroxy-3,
Glycidyl ether compounds such as 3 ′, 5,5′-tetratert-butylstilbene (including isomers having different substitution positions) are exemplified.

Of these, 4,4'-dihydroxybiphenyl, 4,4'-dihydroxy-3,3 ', 5,5'-tetramethyl are preferred in terms of availability, performance, raw material price and the like. Biphenyl, bis (3,5-dimethyl-4-
Hydroxyphenyl) methane, bis (2,3,5-trimethyl-4-hydroxyphenyl) methane, 2,2-bis (3′-methyl-4′-hydroxyphenyl) propane, 2,2-bis (3 ′, 5'-dimethyl-4'-hydroxyphenyl) propane, glycidyl etherified bis (2-tert-butyl-5-methyl-4-hydroxyphenyl) sulfide (the above seven epoxy resins are hereinafter referred to as group a); 3-tert-butyl-2,
4'-dihydroxy-3 ', 5', 6-trimethylstilbene, 3-tert-butyl-4,4'-dihydroxy-3 ', 5', 6-trimethylstilbene, 3-tert-butyl-4,4 ' -Dihydroxy-3 ', 5
Glycidyl etherified product of 5′-trimethylstilbene (the above three types of epoxy resins are hereinafter referred to as group b), 4,
4′-dihydroxy-3,3 ′, 5,5′-tetramethylstilbene, 4,4′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylstilbene,
2,2′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylstilbene, 2,4′-dihydroxy-3,3′-di-tert-butyl-6,6′-dimethylstilbene, 2, 2'-dihydroxy-3,
3 ', 5,5'-tetramethylstilbene, or 4,
4'-dihydroxy-3,3'-ditert-butyl-
One or more selected from glycidyl etherified products of 5,5′-dimethylstilbene (the above six types of epoxy resins are hereinafter referred to as group c) are preferred.

Among the group a, the biphenyl type epoxy resin has a high viscosity lowering effect and a high reactivity of 4,4 '.
Those containing a skeleton of -dihydroxybiphenyl are preferred. In other group a, bis (3,5-dimethyl-4-hydroxyphenyl) methane, 2,2-bis (3 ′, 5′-dimethyl-4′-hydroxyphenyl)
Propane, bis (2-tert-butyl-5-methyl-
Glycidyl etherified products of 4-hydroxyphenyl) sulfide are particularly preferred. In the stilbene type epoxy resin, a mixture of at least one selected from the group b and at least one selected from the group c is preferable because the melting point is low.
The mixing ratio, mixing method, and the like are not particularly limited. For example, there is a method of mixing stilbene-type phenols, which are raw materials of the stilbene-type epoxy resin, before glycidyl etherification, or a method of melt-mixing both stilbene-type epoxy resins. In order to improve the moisture resistance reliability, it is desirable that the amount of chlorine ions, sodium ions and other free ions contained in the crystalline epoxy resin used in the present invention is as small as possible.

The phenolic resin used in the present invention includes all monomers, oligomers and polymers having a phenolic hydroxyl group in the molecule, such as phenol novolak resin, cresol novolak resin, terpene-modified phenol resin, and dicyclopentadiene-modified phenol. Examples include, but are not limited to, resins, triphenolmethane-type resins, phenol-aralkyl-type phenol resins, and the like. Also, these phenolic resins
They may be used alone or as a mixture. The equivalent ratio of the epoxy group of all epoxy resins to the phenolic hydroxyl group of all phenol resins is preferably 0.5 to 2.
0, particularly preferably 0.7 to 1.5. 0.5 ~
When the ratio is out of the range of 2.0, the curability, the moisture resistance reliability and the like are undesirably reduced.

The type of the inorganic filler used in the present invention is not particularly limited, and those generally used for a sealing material can be used. For example, fused crushed silica, fused spherical silica, crystalline silica, secondary aggregated silica, alumina, titanium white, aluminum hydroxide and the like can be mentioned, and fused spherical silica is particularly preferred. The shape is preferably infinitely spherical, and the filling amount can be increased by mixing particles having different particle sizes. The blending amount of the inorganic filler is preferably from 75 to 94% by weight in the entire epoxy resin composition. If it is less than 75% by weight, the reinforcing effect of the inorganic filler is not sufficiently exhibited,
And because the compounding amount of the resin component which is a factor of moisture absorption increases,
Since the amount of moisture absorbed by the cured product of the resin composition increases, cracks are likely to occur in the semiconductor device during the soldering process, which is not preferable. If the content exceeds 94% by weight, the fluidity of the epoxy resin composition is lowered, and poor filling, chip shift, pad shift, and wire sweep are likely to occur during molding, which is not preferable. The inorganic filler used in the present invention,
If necessary, the inorganic filler may be treated with a coupling agent, an epoxy resin or a phenol resin in advance, and may be used as a method of removing the solvent after mixing with a solvent or directly using the inorganic filler. There is a method of adding to a material and treating using a mixer.

The curing accelerator used in the present invention includes:
Any compound that promotes a crosslinking reaction between the epoxy resin and the phenol resin may be used. For example, amine compounds such as 1,8-diazabicyclo (5,4,0) undecene-7;
Organophosphorus compounds such as triphenylphosphine, tetraphenylphosphonium and tetraphenylborate salts,
Examples include imidazole compounds such as 2-methylimidazole, but are not limited thereto. These curing accelerators may be used alone or as a mixture.

The epoxy resin composition of the present invention comprises (A)
In addition to the component (E), if necessary, brominated epoxy resins, antimony oxide, flame retardants such as phosphorus compounds, inorganic ion exchangers such as bismuth oxide hydrate, coloring agents such as carbon black and red iron oxide, silicone oil, Various additives such as a low-stress agent such as silicone rubber, a release agent such as natural wax, synthetic wax, higher fatty acid and its metal salts or paraffin, and an antioxidant can be blended. The epoxy resin composition of the present invention is obtained by mixing components (A) to (E) and other additives using a mixer,
It is obtained by melt-kneading with a kneader such as a heating kneader or an extruder, cooling and pulverizing. In order to manufacture a semiconductor device by encapsulating an electronic component such as a semiconductor element using the epoxy resin composition of the present invention, it is sufficient to cure and mold by a molding method such as a transfer mold, a compression mold, and an injection mold.

Hereinafter, the present invention will be described specifically with reference to Examples, but the present invention is not limited thereto. The mixing unit is parts by weight. Example 1 Biphenyl type epoxy resin having a structure of formula (5) as a main component (epoxy equivalent: 190, melting point: 105 ° C.) 6.2 parts by weight Phenolic resin of formula (6) (hydroxyl equivalent: 174, softening point: 75 ° C.) 5.7 parts by weight 0.4% by weight of a 50% isopropyl alcohol solution of the silane coupling agent of formula (7) (k is 5 on average) (hereinafter referred to as silane coupling agent A) fused spherical silica powder 87. 0 part by weight 1,8-diazabicyclo (5,4,0) undecene-7 (hereinafter referred to as DBU) 0.2 part by weight Carnauba wax 0.2 part by weight Carbon black 0.3 part by weight was mixed using a mixer. After that, when the surface temperature is
The mixture was kneaded 30 times using two rolls at 5 ° C., and the obtained kneaded material sheet was cooled and pulverized to obtain a resin composition. The obtained resin composition was evaluated by the following method. Table 1 shows the results.

Embedded image

[0024]

Embedded image

[0025]

Embedded image

Evaluation method Spiral flow: Using a mold for spiral flow measurement in accordance with EMMI-1-66, a mold temperature of 175 ° C.
The measurement was performed at an injection pressure of 70 kg / cm ² and a curing time of 2 minutes.
The unit is cm. Heat strength: Flexural strength at 240 ° C. is determined according to JIS K 691.
It measured according to 1. The unit is N / mm ² . Solder resistance: 100-pin TQFP (package size is 1
4 × 14 mm, thickness 1.4 mm, silicon chip size 8.0 × 8.0 mm, lead frame made of 42 alloy), mold temperature 175 ° C., injection pressure 75 kg / c
transfer molding with m ² , curing time 2 minutes, 175
Post-curing was performed at 8 ° C. for 8 hours. The obtained semiconductor package was placed in an environment of 85 ° C. and 85% relative humidity for 72 hours and 16 hours.
It was left for 8 hours and then immersed in a 240 ° C. solder bath for 10 seconds. Observe the external cracks with a microscope and check the number of cracks [(number of packages with cracks) / (total number of packages)
× 100] in%. Further, the ratio of the peeled area at the interface between the chip and the cured product of the resin composition was measured using an ultrasonic flaw detector, and the peeling rate [(peeled area) / (chip area)
× 100], and the average value of five packages is obtained.
%.

Examples 2 to 8 and Comparative Examples 1 to 3 Each component was blended in the proportions shown in Table 1 to obtain a resin composition in the same manner as in Example 1, and evaluated in the same manner as in Example 1. Table 1 shows the results. The details of the epoxy resin, the phenol resin, the melt mixture, and the hydrolyzate of the silane coupling agent other than those used in Example 1 are shown below. Orthocresol novolak type epoxy resin (epoxy equivalent 196, softening point 55 ° C.), stilbene type epoxy resin having a structure of formula (8) as a main component (epoxy equivalent 187, melting point 110)
℃), phenol novolak resin (hydroxyl equivalent 105
Softening point 105 ° C)

Embedded image

Production Example of Hydrolyzate A The silane coupling agent of the formula (7) used in Example 1 and pure water are mixed at a ratio of 80:20, and sufficiently stirred and mixed until the mixture does not separate into two layers. Thus, hydrolyzate A was obtained. Production Example of Melt Mixture Melt Mixture A 6.2 parts by weight of the epoxy resin of the formula (5) used in Example 1 and 5.7 parts by weight of the phenol aralkyl resin of the formula (6) are completely melt-mixed at 110 ° C. After that, 0.4 parts by weight of the silane coupling agent of the formula (7) used in Example 1 was added to obtain a molten mixture A. Melt mixture B After completely melting 5.7 parts by weight of the phenol resin of the formula (6) used in Example 1 at 110 ° C., the silane coupling agent 0.2 of the formula (7) used in Example 1 was melted. The melted mixture B was obtained by adding parts by weight. Production Example of Treated Silica Treated fused spherical silica A 0.4 parts by weight of the silane coupling agent of the formula (7) used in Example 1 was stirred with 87 parts by weight of the fused spherical silica used in Example 1 using a mixer. It was added dropwise. After continuing stirring as it is for 15 minutes, it was left at room temperature for 8 hours to obtain treated silica A. Treated fused spherical silica B While stirring 87 parts by weight of the fused spherical silica used in Example 1 with a mixer, 0.2 part by weight of the silane coupling agent of the formula (7) used in Example 1 was added dropwise. After continuing stirring as it is for 15 minutes, it was left at room temperature for 8 hours to obtain treated silica B.

[0029]

[Table 1]

[0030]

The semiconductor device obtained by using the epoxy resin composition of the present invention is excellent in strength at heat and solder resistance.

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[Procedure amendment]

[Submission date] June 16, 2000 (2006.1.
6)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claim 2

[Correction method] Change

[Correction contents]

Embedded image (R ₄ is an alkyl group having 1 to 6 carbon atoms, which may be the same or different; m is an integer of 0 to 4)

Embedded image

Embedded image (R ₇ is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, which may be the same or different. R ₈ has 1 carbon atom.
And up to 6 alkyl groups, which may be the same or different. m is an integer from 0 to 4)

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (reference) C08K 9/06 C08K 9/06 C08L 83/08 C08L 83/08 H01L 23/29 H01L 23/30 R 23/31 F term (Ref.) EA03 EB06 EC03 EC05

Claims (5)

[Claims] 1. A resin obtained by hydrolyzing (A) an epoxy resin, (B) a phenol resin, (C) a silane coupling agent represented by the general formula (1), or all or a part of the silane coupling agent. Hydrolyzate, (D) inorganic filler,
And (E) an epoxy resin composition for semiconductor encapsulation, comprising a curing accelerator as an essential component. Embedded image (R ₁ is an alkoxy group having 1 to 10 carbon atoms, R ₂ is an alkoxy group having 1 carbon atom
10 to 10 alkyl groups. n is an integer of 1 to 3, R ₃ is a hydrogen atom, a phenyl group, an alkyl group having 1 to 10 carbon atoms,
Or an amino group. k is a positive number from 1 to 10 on average, m
Is an integer of 1 to 5. ) 2. The method according to claim 1, wherein the epoxy resin (A) has the general formula (2):
The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the composition is at least one selected from general formulas (3) and (4). Embedded image (R ₄ is an alkyl group having 1 to 6 carbon atoms, which may be the same or different, and m is an integer of 0 to 4). Embedded image (R ₇ is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, which may be the same or different. R ₈ has 1 carbon atom.
And up to 6 alkyl groups, which may be the same or different. m is an integer from 0 to 4) 3. The silane coupling agent represented by the general formula (1) or a hydrolyzate obtained by hydrolyzing all or a part of the silane coupling agent is (A) an epoxy resin or (B) 3. The epoxy resin composition for semiconductor encapsulation according to claim 1, which is preliminarily heated and mixed with all or a part of the phenol resin. 4. A silane coupling agent represented by the general formula (1), or a hydrolyzate obtained by hydrolyzing all or a part of the silane coupling agent, comprises (D) an inorganic filler in advance. The epoxy resin composition for semiconductor encapsulation according to claim 1, which is subjected to a surface treatment. 5. A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin composition according to claim 1.