JPH11209579A - Sealing epoxy resin composition and resin-sealing type photosemiconductor device - Google Patents

Sealing epoxy resin composition and resin-sealing type photosemiconductor device

Info

Publication number
JPH11209579A
JPH11209579A JP10013092A JP1309298A JPH11209579A JP H11209579 A JPH11209579 A JP H11209579A JP 10013092 A JP10013092 A JP 10013092A JP 1309298 A JP1309298 A JP 1309298A JP H11209579 A JPH11209579 A JP H11209579A
Authority
JP
Japan
Prior art keywords
epoxy resin
resin composition
sealing
composition
mercapto group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10013092A
Other languages
Japanese (ja)
Other versions
JP3391681B2 (en
Inventor
Ikuo Nakasuji
郁雄 中筋
Hiroshi Yamanaka
浩史 山中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP01309298A priority Critical patent/JP3391681B2/en
Publication of JPH11209579A publication Critical patent/JPH11209579A/en
Application granted granted Critical
Publication of JP3391681B2 publication Critical patent/JP3391681B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PROBLEM TO BE SOLVED: To obtain the subject resin composition improving adhesiveness with a lead frame and processability in subsequent processes without damaging releasability to a mold or an appearance of a molded product, having excellent reliability in moisture resistance and useful for a photosemiconductor element, etc., by including a mercapto group-containing silane compound. SOLUTION: This sealing epoxy resin composition contains an epoxy resin such as a bisphenol A type epoxy resin, a hardener such as a hexahydrophthalic anhydride, a hardening accelerator such as triphenylphosphine and preferably 0.001-5 wt.% (based on the weight of the whole composition) of a mercapto group-containing silane compound such as a compound obtained by previously hydrolyzing and reacting with an epoxy resin. Preferably, the composition further contains an ethoxy compound of an >=18C linear primary alcohol and preferably a resin-sealing type semiconductor device is produced by using the composition.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、LED、フォトト
ランジスター、フォトダイオード、CCD、EPROM
等の光半導体素子を封止するために用いられるエポキシ
樹脂組成物とこのエポキシ樹脂組成物により封止された
光半導体装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LED, a phototransistor, a photodiode, a CCD, and an EPROM.
The present invention relates to an epoxy resin composition used for sealing an optical semiconductor element such as an optical semiconductor device, and an optical semiconductor device sealed with the epoxy resin composition.

【0002】[0002]

【従来の技術】発光素子、受光素子等の光半導体の封止
材として、透明性、密着性、耐湿性、電気絶縁性、耐熱
性等に優れる点から、エポキシ樹脂組成物による樹脂封
止が主流になっている。これらの封止方法としては、一
般に常温で固形の場合はタブレットをトランスファー成
形する方法や、常温で液状の場合は、キャスティングや
ポッティング、印刷等の方式により、光半導体装置が製
造されている。その中でも、エポキシ樹脂組成物による
トランスファーモールドでの樹脂封止は、作業性並び
に、量産性の面でも優れている。
2. Description of the Related Art As an encapsulating material for optical semiconductors such as light-emitting elements and light-receiving elements, resin encapsulation with an epoxy resin composition is preferred because of its excellent transparency, adhesion, moisture resistance, electrical insulation, heat resistance and the like. It has become mainstream. As these sealing methods, an optical semiconductor device is generally manufactured by a method of transfer molding a tablet when solid at room temperature, or by casting, potting, printing or the like when liquid at room temperature. Among them, resin encapsulation by transfer molding using an epoxy resin composition is excellent in workability and mass productivity.

【0003】ここで、この光半導体用の封止材は、透明
性が最重要視されるため、シリカ等の無機質充填材をエ
ポキシ樹脂組成物中に多量に添加することが困難であ
る。このため、成形体において、エポキシ樹脂組成物の
熱膨張係数は約70ppmであり、素子とリードフレー
ムの熱膨張係数は約5〜17ppmのため、この熱膨張
係数差により発生する応力が非常に大きい。
[0003] Here, in the encapsulant for optical semiconductors, since transparency is regarded as the most important factor, it is difficult to add a large amount of an inorganic filler such as silica to the epoxy resin composition. For this reason, in the molded body, the thermal expansion coefficient of the epoxy resin composition is about 70 ppm, and the thermal expansion coefficient of the element and the lead frame is about 5 to 17 ppm. .

【0004】このトランスファーモールドに用いられる
エポキシ樹脂組成物は、金型からの離型性をアップさせ
るために、内部離型剤が一般に添加されている。このた
め、従来の技術では、モールド及びアフターキュアー直
後に、エポキシ樹脂組成物とインナー(素子及びリード
フレーム)が密着していても、その後のバリ取りや半田
メッキ等の後加工時に加わる外部応力により剥離が発生
し易いという問題がある。この様に、後加工時に剥離が
発生すると、その剥離界面から侵入した水分等がアルミ
パッドやアルミ配線等の腐食を引き起こし、導通不良や
リーク不良を引き起こす原因となる。
The epoxy resin composition used for the transfer mold is generally added with an internal release agent in order to improve the releasability from the mold. For this reason, according to the conventional technology, even if the epoxy resin composition and the inner (element and lead frame) are in close contact with each other immediately after the mold and after-cure, due to external stress applied during subsequent processing such as deburring and solder plating. There is a problem that peeling easily occurs. Thus, when peeling occurs during post-processing, moisture or the like that has entered from the peeling interface causes corrosion of the aluminum pad, aluminum wiring, and the like, causing conduction failure and leak failure.

【0005】[0005]

【発明が解決しようとする課題】上記の事情に鑑みて、
本発明の課題は、金型との離型性や成型品の外観等を損
なわずに、リードフレームとの密着力の向上を計り、耐
後加工性を向上させること、そして、安定して良好な耐
湿信頼性を確保した樹脂封止型半導体装置を提供するこ
とにある。
In view of the above circumstances,
An object of the present invention is to improve the adhesion to a lead frame and improve post-processing resistance without impairing the releasability from a mold and the appearance of a molded product, and to stably improve the resistance to post-processing. It is an object of the present invention to provide a resin-encapsulated semiconductor device that ensures high moisture resistance reliability.

【0006】[0006]

【課題を解決するための手段】本発明者らは、成形体の
剥離界面から浸入する水分等による様々な不良発生や耐
湿信頼性の安定性向上を解決するために様々な研究を重
ねた。ここで、エポキシ樹脂組成物と素子及びリードフ
レームの熱膨張係数差により発生する応力が非常に大き
いため、封止樹脂とリードフレームの界面には非常に大
きな応力が蓄積されている。このため、たとえモールド
及びアフターキュアー後に密着していても、バリ取り工
程で加わる成型品への外部応力や、半田メッキ工程で接
触するアルカノールスルホン酸等の薬品による界面浸食
で発生する剥離を防止することが有効であることに着眼
した。そこで本研究者らは、エポキシ樹脂組成物とリー
ドフレームとの密着力を向上することについて更に研究
を重ねた。
Means for Solving the Problems The present inventors have conducted various studies in order to solve various defects caused by moisture and the like entering from a peeling interface of a molded article and to improve the stability of humidity resistance. Here, since the stress generated due to the difference in thermal expansion coefficient between the epoxy resin composition and the element and the lead frame is very large, very large stress is accumulated at the interface between the sealing resin and the lead frame. For this reason, even if it adheres after the mold and after-curing, it prevents external stress applied to the molded product in the deburring step and peeling caused by interfacial erosion due to chemicals such as alkanol sulfonic acid that come into contact in the solder plating step. I found that it was effective. Therefore, the present inventors have further studied to improve the adhesion between the epoxy resin composition and the lead frame.

【0007】その結果、エポキシ樹脂(A成分)と硬化
剤(B成分)と硬化促進剤(C成分)とを含有し、更に
加えて下記一般式:
As a result, the composition contains an epoxy resin (component A), a curing agent (component B), and a curing accelerator (component C).

【0008】[0008]

【化1】 Embedded image

【0009】で表されるメルカプト基含有シラン化合物
(D成分)を添加したエポキシ樹脂組成物では、上記D
成分中の硫黄原子がリードフレームの材質である金属と
電気的に錯体を形成し、より強固にエポキシ樹脂組成物
とリードフレームの密着力が形成されることを突き止め
た。更には、この成分Dを予めA成分と前反応させた
り、或いは、このD成分を予め加水分解させることによ
り、更に均一で強固な密着力が得られることを見いだし
た。また、一般に光半導体用途に用いられているリード
フレームの表面に銀メッキの施された銀メッキリードフ
レームにおいては、この密着力の著しい向上が達成され
た。このため、バリ取り工程で外部応力が加わったり、
半田メッキ工程で薬品が接触しても剥離が発生せず、剥
離界面から浸入する水分等による様々な不良発生や耐湿
信頼性の安定性向上が図れることを見いだし本発明に至
った。
In the epoxy resin composition to which the mercapto group-containing silane compound (D component) represented by
It has been found that the sulfur atoms in the components form an electrical complex with the metal that is the material of the lead frame, and the adhesion between the epoxy resin composition and the lead frame is more strongly formed. Furthermore, it has been found that a more uniform and strong adhesion can be obtained by pre-reacting the component D with the component A or hydrolyzing the component D in advance. Further, in a silver-plated lead frame in which the surface of a lead frame generally used for an optical semiconductor is silver-plated, a remarkable improvement in the adhesion is achieved. For this reason, external stress is applied in the deburring process,
The present invention has been found that peeling does not occur even when chemicals come into contact in the solder plating step, and various defects due to moisture or the like penetrating from the peeling interface and improvement in stability of humidity resistance can be achieved.

【0010】本発明は、上記課題を達成するために成分
として、エポキシ樹脂と硬化剤と硬化促進剤を含むエポ
キシ樹脂組成物において、メルカプト基含有シラン化合
物をも含有することを特徴とする。本発明は、また、半
導体素子をエポキシ樹脂組成物で封止してなる半導体装
置において、前記エポキシ樹脂として上記本発明のエポ
キシ樹脂組成物が使用されていることを特徴とする。
The present invention is characterized in that the epoxy resin composition containing an epoxy resin, a curing agent and a curing accelerator also contains a mercapto group-containing silane compound as a component to achieve the above object. The present invention is also characterized in that in a semiconductor device in which a semiconductor element is sealed with an epoxy resin composition, the epoxy resin composition of the present invention is used as the epoxy resin.

【0011】[0011]

【発明の実施の形態】次に、この発明を詳しく説明す
る。本発明に用いたエポキシ樹脂組成物はA:エポキシ
樹脂 B:硬化剤 C:硬化促進剤 D:上記一般式で
表されるメルカプト基含有シラン化合物の必須成分から
成るものである。
Next, the present invention will be described in detail. The epoxy resin composition used in the present invention is composed of essential components of A: epoxy resin B: curing agent C: curing accelerator D: mercapto group-containing silane compound represented by the above general formula.

【0012】上記A成分であるエポキシ樹脂としては1
分子中に2個以上のエポキシ基を持っていれば特に制限
はないが、光半導体用エポキシ樹脂組成物には比較的着
色の少ないものが好ましい。例えば、ビスフェノールA
型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビ
スフェノールS型エポキシ樹脂、オルトクレゾールノボ
ラック型エポキシ樹脂、脂環式エポキシ樹脂、トリグリ
シジルイソシアヌレート、脂肪族系エポキシ樹脂等が挙
げられる。又、これらを単独でも併用して用いても差し
支えない。
The epoxy resin as component A is 1
There is no particular limitation as long as the molecule has two or more epoxy groups, but an epoxy resin composition for an optical semiconductor that is relatively less colored is preferable. For example, bisphenol A
Type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, orthocresol novolak type epoxy resin, alicyclic epoxy resin, triglycidyl isocyanurate, aliphatic epoxy resin and the like. These may be used alone or in combination.

【0013】上記B成分である硬化剤としては、エポキ
シ樹脂と反応するものであれば特に制限はないが、光半
導体用エポキシ樹脂組成物には比較的着色の少ないもの
が好ましい。例えば、無水ヘキサヒドロフタル酸等の酸
無水物、フェノール、クレゾール、キシレノール、レゾ
ールシン等とホルムアルデヒドとを縮合反応して得られ
るノボラック型フェノール樹脂等がある。この他にアミ
ン系硬化剤も挙げられるが、硬化時の変色が大きいため
使用する際は添加量等に注意を要する。又、これらを単
独でも併用して用いても差し支えない。
The curing agent as the component B is not particularly limited as long as it reacts with the epoxy resin, but it is preferable that the epoxy resin composition for optical semiconductors has relatively little coloring. For example, there is a novolak-type phenol resin obtained by a condensation reaction of an acid anhydride such as hexahydrophthalic anhydride, phenol, cresol, xylenol, resorcin and the like with formaldehyde. In addition, amine-based curing agents can also be used, but when used, care must be taken with regard to the amount added, etc. due to the large discoloration during curing. These may be used alone or in combination.

【0014】このB成分の含有量は、エポキシ樹脂1当
量に対して硬化剤の当量を0.5〜1.5の範囲に設定
することが好ましく、特に好ましくは0.7〜1.0で
ある。硬化剤の当量が0.5未満であれば離型性が悪
く、1.5を越えると吸湿が増加し、信頼性が悪くなる
傾向がある。上記C成分である硬化促進剤としては、エ
ポキシ樹脂と硬化剤の反応を促進させる作用があるもの
であれば特に制限はないが、比較的着色の少ないものが
好ましい。例えば、トリフェニルフォスフィン、ジフェ
ニルフォスフィン等の有機フォスフィン系硬化促進剤、
2−メチルイミダゾール、2−フェニル4−メチルイミ
ダゾール、2−フェニルイミダゾール等のイミダゾール
系硬化促進剤、1,8−ジアザビシクロ(5,4,0)
ウンデセン−7、トリエタノールアミン、ベンジルジメ
チルアミン等の3級アミン系硬化促進剤、テトラフェニ
ルホスホニウム・テトラフェニルボレート等の有機塩類
等が挙げられる。又、これらを単独でも併用して用いて
も差し支えない。
The content of the component B is preferably such that the equivalent of the curing agent is set in the range of 0.5 to 1.5 with respect to 1 equivalent of the epoxy resin, and particularly preferably 0.7 to 1.0. is there. If the equivalent of the curing agent is less than 0.5, the releasability is poor, and if it exceeds 1.5, the moisture absorption increases, and the reliability tends to deteriorate. The curing accelerator, which is the component C, is not particularly limited as long as it has an action of accelerating the reaction between the epoxy resin and the curing agent, but a relatively less coloring agent is preferred. For example, organic phosphine-based curing accelerators such as triphenylphosphine and diphenylphosphine,
Imidazole-based curing accelerators such as 2-methylimidazole, 2-phenyl-4-methylimidazole and 2-phenylimidazole; 1,8-diazabicyclo (5,4,0)
Examples include tertiary amine curing accelerators such as undecene-7, triethanolamine and benzyldimethylamine, and organic salts such as tetraphenylphosphonium / tetraphenylborate. These may be used alone or in combination.

【0015】このC成分の含有量は、エポキシ樹脂組成
物全体に対して硬化促進剤0.25〜5wt%の範囲に設
定することが好ましい。硬化促進剤の配合量が0.25
wt%未満ではゲル化時間が遅くなり、硬化作業性を著し
く低下させる傾向がみられ、逆に5wt%を越えると、硬
化が急速に進み、その結果、発熱が大きくなってクラッ
クや発泡を生じる恐れがある。
The content of the component C is preferably set in the range of 0.25 to 5% by weight of a curing accelerator based on the entire epoxy resin composition. The amount of the curing accelerator is 0.25
If the content is less than 5% by weight, the gelation time tends to be slow, and the curing workability tends to be remarkably reduced. There is fear.

【0016】上記D成分としては上記一般式で表される
メルカプト基含有シラン化合物を指す。このD成分をエ
ポキシ樹脂組成物に添加する際に、そのまま添加しても
差し障りはないが、特に予めA成分と前反応したものを
添加することにより、リードフレームとの密着強度が均
一に大きく向上する。また、更には、このD成分を予め
加水分解させたE成分をA成分と前反応することによ
り、リードフレームとの密着強度を更に大幅に向上でき
る。
The D component refers to a mercapto group-containing silane compound represented by the above general formula. When this D component is added to the epoxy resin composition, there is no problem if it is added as it is, but particularly, by adding a component which has been pre-reacted with the A component in advance, the adhesion strength to the lead frame is uniformly and greatly improved. I do. Furthermore, by pre-reacting the E component obtained by hydrolyzing the D component with the A component, the adhesion strength to the lead frame can be further greatly improved.

【0017】このD成分の含有量は、エポキシ樹脂組成
物全体に対して、5wt%以下の添加量になるように配合
することが好ましい。更に好ましくは0.001〜5wt
%の範囲である。すなわちD成分の配合量が0.001
wt%未満ではリードフレームとの十分な密着力を得難
く、5wt%より上では、組成物のガラス転移点や曲げ強
度等の諸物性の低下や、成型時のブリード等による離型
性の阻害を招く恐れがある。
It is preferable that the content of the component D is blended so as to be 5% by weight or less based on the whole epoxy resin composition. More preferably 0.001 to 5 wt
% Range. That is, the amount of the component D is 0.001.
If the content is less than 5% by weight, it is difficult to obtain sufficient adhesion to the lead frame. May be caused.

【0018】また、エポキシ樹脂組成物中に炭素数18
以上の直鎖状第一級アルコールのエトキシ化物(成分
F)を含有することによりリードフレームとの高い密着
性と金型との安定した連続離型性を同時に合わせ持った
エポキシ樹脂組成物を得ることができる。また、この発
明に用いられるエポキシ樹脂組成物は、上記以外に必要
に応じて変色防止剤、劣化防止剤、染料、シリカ等の無
機充填剤、シラン系カップリング剤、変性剤、可塑剤、
希釈剤等を配合しても差し支えない。
The epoxy resin composition contains 18 carbon atoms.
By containing the ethoxylated product of the linear primary alcohol (component F), an epoxy resin composition having both high adhesion to the lead frame and stable continuous release from the mold at the same time is obtained. be able to. In addition, the epoxy resin composition used in the present invention, in addition to the above, if necessary, a discoloration inhibitor, a deterioration inhibitor, a dye, an inorganic filler such as silica, a silane coupling agent, a modifier, a plasticizer,
A diluent or the like may be blended.

【0019】ここでいう離型剤成分は特に制限されるも
のではないが、例えば、ラウリン酸アマイド等の飽和脂
肪酸モノアマイド類、オレイン酸アマイド等の不飽和脂
肪酸モノアマイド類、N−ステアリルステアリン酸アマ
イド等の置換アマイド類、メチロールステアリン酸アマ
イド等のメチロールアマイド類、メチレンビスステアリ
ン酸アマイド等の飽和脂肪酸ビスアマイド類、エチレン
ビスオレイン酸アマイド等の不飽和脂肪酸ビスアマイド
類、m−キシレンビスステアリン酸アマイド等の芳香族
系ビスアマイド類等の脂肪酸アマイド等がエポキシ樹脂
組成物への相溶性の点からも光半導体用途に好ましい。
離型剤の配合割合は組成物全体の0.25〜7.5wt%
であることが好ましい。
The release agent component referred to herein is not particularly limited, but includes, for example, saturated fatty acid monoamides such as lauric acid amide, unsaturated fatty acid monoamides such as oleic acid amide, N-stearyl stearic acid amide and the like. Substituted amides, methylol amides such as methylol stearic acid amide, saturated fatty acid bisamides such as methylene bis stearic acid amide, unsaturated fatty acid bisamides such as ethylene bisoleic acid amide, and fragrances such as m-xylene bis stearic acid amide Fatty acid amides such as group-based bisamides are preferred for use in optical semiconductors also from the viewpoint of compatibility with the epoxy resin composition.
The mixing ratio of the release agent is 0.25 to 7.5 wt% of the whole composition.
It is preferred that

【0020】上記エポキシ樹脂組成物は、エポキシ樹
脂、硬化剤、硬化促進剤とD成分、更にはその他添加剤
成分を溶解混合又は溶融混合後3本ロール等で溶融混練
し、これを冷却・固化した後、粉砕し、必要ならタブレ
ット状に打錠することにより製造することができる。ま
た、性状が室温で液状の場合は、溶解混合又は溶融混練
までで製造することができる。そして、このようにして
得られたエポキシ樹脂組成物を、固形の場合はタブレッ
トをトランスファー成形して光半導体素子の封止に用い
ることにより、また、液状の場合は、キャスティングや
ポッティング、印刷等の方式で注型、硬化させることに
より、光半導体装置を製造することができる。
The epoxy resin composition is melt-mixed or melt-kneaded with an epoxy resin, a curing agent, a curing accelerator, a D component, and other additive components, and then melt-kneaded with three rolls and the like, and cooled and solidified. After that, it can be manufactured by crushing and, if necessary, tableting into tablets. Further, when the properties are liquid at room temperature, it can be produced by dissolution mixing or melt kneading. Then, the epoxy resin composition thus obtained is used for sealing the optical semiconductor element by transfer-molding a tablet when solid, and for casting or potting when printing in a liquid state. An optical semiconductor device can be manufactured by casting and curing in a system.

【0021】上記の方法で得たエポキシ樹脂組成物を用
いて以下のように性能評価を行った。 (光透過性)分光光度計((株)日立製作所製)を用
い、厚み1mmのテストピースの可視光領域の光透過率か
ら評価した。 (耐湿信頼性)幅10μm、厚み1μmの櫛形アルミパ
ターンを形成したTEGを搭載した銀メッキを施した4
2アロイリードフレームを16DIP金型を用いてトラ
ンスファー成形を行った。成型品を120℃で16時間
アフターキュアーし性能評価用の16DIP10パッケ
ージを得た。上記10パッケージを121℃100%R
Hの条件下で50時間PCT試験を行いオープン不良率
から評価した。 (密着性)超音波探査装置(キャノン製)を用いバリ取
り工程後及び半田メッキ工程後の銀メッキリードフレー
ムとの密着性を評価した。 (密着強度)銀メッキを施した42アロイリードフレー
ム、及び銀メッキを施したCuフレームを用い、モール
ド及びタイバーカットを施したリードフレーム部分をイ
ンストロン型引っ張り試験器(島津製作所製)を用い、
2mm/sec.でリード部分の引き抜き強度を評価した。
Using the epoxy resin composition obtained by the above method, the performance was evaluated as follows. (Light Transmittance) Using a spectrophotometer (manufactured by Hitachi, Ltd.), evaluation was made based on the light transmittance in the visible light region of a test piece having a thickness of 1 mm. (Moisture resistance reliability) Silver-plated 4 with TEG on which a comb-shaped aluminum pattern having a width of 10 μm and a thickness of 1 μm is mounted
Two alloy lead frames were subjected to transfer molding using a 16 DIP mold. The molded product was after-cured at 120 ° C. for 16 hours to obtain a 16DIP10 package for performance evaluation. The above 10 packages are 121 ° C and 100% R
A PCT test was performed for 50 hours under the condition of H, and the evaluation was made based on the open defect rate. (Adhesion) The adhesion to the silver-plated lead frame after the deburring step and after the solder plating step was evaluated using an ultrasonic probe (manufactured by Canon). (Adhesion strength) Using a 42 alloy lead frame subjected to silver plating and a Cu frame subjected to silver plating, using a Instron type tensile tester (manufactured by Shimadzu Corp.)
The pull-out strength of the lead portion was evaluated at 2 mm / sec.

【0022】これら評価結果を表1,2にあわせて示し
た。
The evaluation results are shown in Tables 1 and 2.

【0023】[0023]

【実施例】以下に、本発明を実施例及び比較例に基づい
て説明する。 (実施例1〜7及び比較例1〜6)実施例及び比較例の
配合成分については下記の物質を表1,2に示した配合
量でそれぞれ用いた。エポキシ樹脂には、ビスフェノー
ルA型エポキシ樹脂(ア)(油化シェルエポキシ(株)
製エピコート828、エポキシ等量195)、ビスフェ
ノールA型エポキシ樹脂(イ)(油化シェルエポキシ
(株)製エピコート1001、エポキシ等量490)、
及び、o−クレゾールノボラック型エポキシ樹脂(ウ)
(住友化学ESCN−195XL、エポキシ等量19
5)を単独又は併用して用いた。硬化剤にはテトラヒド
ロ無水フタル酸(エ)(新日本理化(株)製リカシッド
TH、分子量152)、及び、フェノール樹脂(オ)
(群栄化学製PSM6200、フェノール等量105)
を単独又は併用して用いた。硬化促進剤には1,8−ジ
アザビシクロ(5,4,0)ウンデセン−7(カ)を用
いた。添加剤成分としてはモンタン酸ワックス(キ)
(ヘキスト製WAX−S)、上記F成分に示す炭素数1
8以上の直鎖状第一級アルコールのエトキシ化物として
平均分子量700で水酸基等量65の直鎖状アルコール
に重量比で50%エトキシ化したもの(ク)(融点11
0℃、平均分子量1500)を用いた。また、上記構造
の成分Dとしてγ−メルカプトプロピルトリメトキシシ
ラン(東芝シリコーン(株)製、TSL8380)
(ケ)を用いた。この成分Dを成分Aと予め前反応させ
たものとしては、(ア)と(ケ)を重量比で1:1〜
1:100の割合で配合し、窒素雰囲気下の環流下で3
0〜60℃に加温し1〜5時間反応させたものを用い
た。また、上記成分Dを予め加水分解させた成分Eとし
ては、(ケ)と蒸留水とアルコールを重量比で100:
1〜100:1〜100の割合で混合したものを窒素雰
囲気下の環流下で30〜60℃に加温し1〜10時間加
水分解させたもの(コ)を用いた。成分Eを成分Aと予
め前反応させたものとしては、(ア)と(コ)を重量比
で1:1〜1:100の割合で配合し、窒素雰囲気下の
環流下で30〜60℃に加温し1〜5時間反応させたも
のを用いた。
The present invention will be described below with reference to examples and comparative examples. (Examples 1 to 7 and Comparative Examples 1 to 6) The following substances were used in the amounts shown in Tables 1 and 2, respectively, for the components of Examples and Comparative Examples. Epoxy resins include bisphenol A type epoxy resin (A) (Yuka Kasper Epoxy Co., Ltd.)
Epicoat 828, epoxy equivalent 195), bisphenol A type epoxy resin (a) (Yuika Shell Epoxy Co., Ltd. Epicoat 1001, epoxy equivalent 490),
And o-cresol novolak type epoxy resin (c)
(Sumitomo Chemical ESCN-195XL, epoxy equivalent 19
5) was used alone or in combination. Examples of the curing agent include tetrahydrophthalic anhydride (d) (Rikashid TH, molecular weight 152, manufactured by Nippon Rika Co., Ltd.), and phenol resin (e)
(PSE6200 manufactured by Gunei Chemical, phenol equivalent weight 105)
Was used alone or in combination. 1,8-diazabicyclo (5,4,0) undecene-7 (f) was used as a curing accelerator. As an additive component, montanic acid wax (G)
(WAX-S manufactured by Hoechst), having 1 carbon atom in the F component
An ethoxylated product of 8 or more linear primary alcohols which is 50% by weight ethoxylated to a linear alcohol having an average molecular weight of 700 and a hydroxyl equivalent of 65 (h) (melting point: 11)
0 ° C., average molecular weight 1500). Further, γ-mercaptopropyltrimethoxysilane (TSL8380 manufactured by Toshiba Silicone Co., Ltd.) is used as the component D having the above structure.
(G) was used. As a pre-reaction of the component D with the component A, (A) and (K) may be used in a weight ratio of 1: 1 to 1: 1.
1: 100 and mixed under reflux in a nitrogen atmosphere.
What heated to 0-60 degreeC and made it react for 1 to 5 hours was used. The component E obtained by previously hydrolyzing the component D includes (g), distilled water and alcohol in a weight ratio of 100:
A mixture obtained by heating a mixture of 1 to 100: 1 to 100 at a temperature of 30 to 60 ° C. under reflux in a nitrogen atmosphere and hydrolyzing for 1 to 10 hours was used. Component E was pre-reacted with Component A in advance by mixing (A) and (CO) in a weight ratio of 1: 1 to 1: 100, and refluxing at 30 to 60 ° C. under a nitrogen atmosphere. And reacted for 1 to 5 hours.

【0024】[0024]

【表1】 [Table 1]

【0025】[0025]

【表2】 [Table 2]

【0026】表1,2の結果、実施例に示した様に本発
明によると、上記一般式で表されるメルカプト基含有シ
ラン化合物を使用していない組成物(比較例1)に比べ
て、優れた密着性、耐後工程性を有する。また、比較例
2の様にメルカプト基含有シラン化合物をそのまま組成
物に添加するよりも、予めエポキシ樹脂と前反応した
り、メルカプト基含有シラン化合物を予め加水分解した
ものを使用することにより更なる密着性の向上と耐後工
程性が得られる。更に炭素数18以上の直鎖状第一級ア
ルコールのエトキシ化物を配合することにより、インナ
ーとの密着性と安定した連続離型性を両立させることが
可能となり生産効率も向上できる。また、透明性は現行
と同等の性能を有し、耐湿信頼性もより高い安定性が確
保できる。
According to the results of Tables 1 and 2, as shown in the examples, according to the present invention, compared to the composition not using the mercapto group-containing silane compound represented by the above general formula (Comparative Example 1), Has excellent adhesion and post-process resistance. Further, rather than adding the mercapto group-containing silane compound to the composition as it is as in Comparative Example 2, the use of a pre-reacted epoxy resin or a hydrolyzed mercapto group-containing silane compound is further used. Improved adhesion and post-process resistance can be obtained. Furthermore, by blending an ethoxylated product of a linear primary alcohol having 18 or more carbon atoms, it is possible to achieve both the adhesion to the inner layer and the stable continuous releasability, thereby improving the production efficiency. In addition, transparency has the same performance as the current one, and higher stability can be secured with respect to moisture resistance.

【0027】[0027]

【発明の効果】上記より、特に銀メッキの施されたリー
ドフレームを使用した場合の密着性、及び光透過性に優
れたエポキシ樹脂組成物を得ることができる。これによ
りバリ取り工程や半田メッキ工程等の後加工時において
密着性に優れたエポキシ樹脂組成物を提供することがで
きる。また、更にはこれを用いて耐湿信頼性の良好な光
半導体装置が得られる。
As described above, it is possible to obtain an epoxy resin composition excellent in adhesiveness and light transmittance especially when a lead frame plated with silver is used. This makes it possible to provide an epoxy resin composition having excellent adhesion during post-processing such as a deburring step and a solder plating step. In addition, an optical semiconductor device having good moisture resistance reliability can be obtained by using this.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI H01L 23/29 H01L 33/00 N 23/31 23/30 F 31/02 31/02 B 33/00 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 23/29 H01L 33/00 N 23/31 23/30 F 31/02 31/02 B 33/00

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】エポキシ樹脂と硬化剤と硬化促進剤を含む
エポキシ樹脂組成物において、メルカプト基含有シラン
化合物をも含有することを特徴とする、封止用のエポキ
シ樹脂組成物。
An epoxy resin composition for sealing comprising an epoxy resin, a curing agent and a curing accelerator, wherein the epoxy resin composition further comprises a silane compound having a mercapto group.
【請求項2】メルカプト基含有シラン化合物の配合量が
組成物全体に対し0.001〜5重量%である、請求項
1に記載の封止用のエポキシ樹脂組成物。
2. The epoxy resin composition for sealing according to claim 1, wherein the compounding amount of the silane compound having a mercapto group is 0.001 to 5% by weight based on the whole composition.
【請求項3】メルカプト基含有シラン化合物は、エポキ
シ樹脂と予め反応させたものである、請求項1または2
に記載の封止用のエポキシ樹脂組成物。
3. A mercapto group-containing silane compound which has been previously reacted with an epoxy resin.
The epoxy resin composition for sealing according to the above.
【請求項4】メルカプト基含有シラン化合物は、予め加
水分解したものである、請求項1または2に記載の封止
用のエポキシ樹脂組成物。
4. The epoxy resin composition for sealing according to claim 1, wherein the mercapto group-containing silane compound has been hydrolyzed in advance.
【請求項5】メルカプト基含有シラン化合物は、予め加
水分解したのち、エポキシ樹脂と反応させたものであ
る、請求項1または2に記載の封止用のエポキシ樹脂組
成物。
5. The epoxy resin composition for sealing according to claim 1, wherein the mercapto group-containing silane compound has been hydrolyzed in advance and reacted with an epoxy resin.
【請求項6】炭素数18以上の直鎖状第1級アルコール
のエトキシ化合物をも含有する、請求項1から5までの
いずれかに記載の封止用のエポキシ樹脂組成物。
6. The epoxy resin composition for sealing according to claim 1, further comprising an ethoxy compound of a linear primary alcohol having 18 or more carbon atoms.
【請求項7】半導体素子をエポキシ樹脂組成物で封止し
てなる半導体装置において、前記エポキシ樹脂として請
求項1から6までのいずれかに記載のエポキシ樹脂組成
物が使用されていることを特徴とする樹脂封止型半導体
装置。
7. A semiconductor device in which a semiconductor element is sealed with an epoxy resin composition, wherein the epoxy resin composition according to any one of claims 1 to 6 is used as the epoxy resin. Resin-encapsulated semiconductor device.
JP01309298A 1998-01-26 1998-01-26 Epoxy resin composition for optical semiconductor encapsulation and resin-encapsulated optical semiconductor device Expired - Lifetime JP3391681B2 (en)

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WO2001055243A1 (en) * 2000-01-28 2001-08-02 Hitachi, Ltd. Solvent-free thermosetting resin composition, process for producing the same, and product therefrom
JP2001240726A (en) * 2000-02-28 2001-09-04 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2001240725A (en) * 2000-02-28 2001-09-04 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
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JP2003519929A (en) * 1999-12-30 2003-06-24 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Surface mountable light emitting diode light source and method of manufacturing light emitting diode light source
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Publication number Priority date Publication date Assignee Title
JP2003519929A (en) * 1999-12-30 2003-06-24 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Surface mountable light emitting diode light source and method of manufacturing light emitting diode light source
JP2012009902A (en) * 1999-12-30 2012-01-12 Osram Opto Semiconductors Gmbh Light emitting diode light source attachable to surface, and method of manufacturing light emitting diode light source
WO2001055243A1 (en) * 2000-01-28 2001-08-02 Hitachi, Ltd. Solvent-free thermosetting resin composition, process for producing the same, and product therefrom
US6821657B1 (en) 2000-01-28 2004-11-23 Hitachi, Ltd. Solvent-free thermosetting resin composition, process for producing the same, and product therefrom
US6946198B2 (en) 2000-01-28 2005-09-20 Hitachi, Ltd. Solvent-free thermosetting resin composition, process for producing the same, and product therefrom
JP2001240726A (en) * 2000-02-28 2001-09-04 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2001240725A (en) * 2000-02-28 2001-09-04 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2002374005A (en) * 2001-04-10 2002-12-26 Toshiba Corp Optical semiconductor device
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JP2008308542A (en) * 2007-06-13 2008-12-25 Nitto Denko Corp Epoxy resin composition for sealing optical semiconductor element and optical semiconductor apparatus obtained using the same
WO2011041340A1 (en) * 2009-09-30 2011-04-07 Dow Global Technologies Inc. Epoxy resin compositions
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