JP2001240726A - Epoxy resin composition and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an epoxy resin composition capable of giving a cured product not suffering cracking and peeling from a substrate in soldering after moisture absorption and being excellent in soldering resistance. SOLUTION: This composition comprises (A) an epoxy resin, (B) a phenolic resin, (C) an inorganic filler, (D) a cure accelerator, and (E) a sulfur-containing silane coupling agent or a hydrolyzate obtained by at least partially hydrolyzing the silane coupling agent.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation having excellent solder resistance and a semiconductor device using the same.

[0002]

2. Description of the Related Art Transfer molding of an epoxy resin composition is suitable as a method for encapsulating semiconductor elements such as ICs and LSIs at a low cost and suitable for mass production. The phenol resin has been improved to improve the characteristics. However, in recent market trends of miniaturization, weight reduction, and high performance of electronic equipment, semiconductor integration has been progressing year by year, and surface mounting of semiconductor devices has been promoted. The demands on the composition are becoming increasingly demanding.
For this reason, a problem which cannot be solved by the conventional epoxy resin composition has come out. The biggest problem is that the semiconductor device is exposed to a high temperature of 200 ° C or more in the solder immersion or reflow process due to the adoption of surface mounting, and the stress when the moisture absorbed by the semiconductor device explosively evaporates. This is a phenomenon in which cracks occur in the semiconductor device, and peeling occurs at the interface between the cured portions of the resin composition and the various bonded portions on the semiconductor element, the lead frame, and the inner leads, and the reliability is significantly reduced. .

[0003] In order to improve the reliability reduction due to soldering, the amount of the inorganic filler in the epoxy resin composition is increased to achieve low moisture absorption, high strength, and low thermal expansion, thereby improving solder resistance. A method of improving the flowability and maintaining low viscosity and high fluidity during molding by using a resin having a low melt viscosity is becoming common. On the other hand, the adhesiveness at the interface between a cured product of an epoxy resin composition and a substrate such as a semiconductor element or a lead frame existing inside a semiconductor device has become very important in reliability by soldering. If the adhesive force at this interface is weak, peeling will occur at the interface with the base material after the soldering process, and cracks will occur in the semiconductor device due to this peeling. Conventionally, coupling agents such as γ-glycidoxypropyltrimethoxysilane and γ-aminopropyltriethoxysilane have been added to epoxy resin compositions for the purpose of improving solder resistance. However, these coupling agents have not been able to adequately cope with the increasingly strict requirements for solder resistance in recent years.

[0004]

SUMMARY OF THE INVENTION The present invention provides an epoxy resin composition and a semiconductor device which are excellent in soldering resistance and do not cause cracks or peeling from a substrate in a soldering process after absorbing moisture. is there.

[0005]

The present invention provides (A) an epoxy resin, (B) a phenolic resin, (C) an inorganic filler,
(D) a curing accelerator, (E) a silane coupling agent represented by the general formula (1), or a hydrolyzate obtained by hydrolyzing all or a part of the silane coupling agent. An epoxy resin composition for semiconductor encapsulation, and a semiconductor device obtained by encapsulating a semiconductor element using the same.

Embedded image (R ₁ is an alkoxy group having 1 to 10 carbon atoms, R ₂ is an alkoxy group having 1 carbon atom
10 to 10 alkyl groups. a is a positive number from 1 to 3, m is 1
An integer from 1 to 5, and n is an integer from 1 to 10. )

[0006]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail.
In the coupling agent represented by the general formula (1) used in the present invention, the sulfur atoms are directly bonded to each other, and when the bond between the sulfur atoms is cut during molding, the sulfur atom in the cut portion is changed to various base materials. The adhesive strength is increased by reacting with a hydroxyl group or a metal on the surface. Further, since the sulfur atom has excellent reactivity with silver, the bonding strength with silver is particularly increased, and has a feature of improving the solder resistance.

In the general formula (1), R ₁ is an alkoxy group having 1 to 10 carbon atoms, R ₂ is an alkyl group having 1 to 10 carbon atoms, and a is an integer of 1 to 3; From the viewpoint of improving the adhesion to inorganic fillers and various base materials, a =
3 is most preferred. Further, by adjusting the carbon number of the alkoxy group, the reactivity between the coupling agent and the resin or the inorganic filler can be adjusted. m is an integer of 1 to 5, and m = 3 is preferred because it is easily available. In addition, the viscosity of the silane coupling agent increases by increasing n, and uniform mixing in the epoxy resin composition becomes difficult. In such a case, the silane coupling agent is dissolved in alcohol or the like to adjust the viscosity. May be used. R ₁ is preferably a methoxy group or an ethoxy group, which is liable to undergo hydrolysis.
Specific examples of the silane coupling agent represented by the general formula (1) are shown below, but are not limited thereto.

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As long as the properties of the silane coupling agent represented by the general formula (1) used in the present invention are not impaired,
You may use together with another silane coupling agent. Coupling agents that can be used in combination include all silane compounds having an alkoxysilyl group and an organic functional group such as an epoxy group in one molecule, for example, γ-aminopropyltriethoxysilane, N-β (aminoethyl)- silanes having an amino group such as γ-aminopropyltrimethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, β- (3, Silane having an epoxy group such as 4-epoxycyclohexyl) ethyltrimethoxysilane, silane having a mercapto group such as γ-mercaptopropyltrimethoxysilane, silane having a vinyl group such as vinyltrimethoxysilane,
Examples thereof include silanes having a methacryl group such as γ- (methacryloxypropyl) trimethoxysilane, but are not limited thereto.

The silane coupling agent represented by the general formula (1) may be added with a hydrolyzate obtained by previously hydrolyzing all or a part of the alkoxy group at the time of producing the epoxy resin composition. In this case, since the alkoxy group has been hydrolyzed in advance, a hydrogen bond or a covalent bond can be easily formed with the inorganic filler or the hydroxyl group on the surface of various base materials, and the solder resistance can be improved. Usually, the coupling agent is mixed into the epoxy resin composition by an integral blend, but a silane coupling agent represented by the general formula (1):
Alternatively, all or a part of the hydrolyzate of the silane coupling agent may be mixed in advance with all or a part of the epoxy resin or the phenol resin by heating. The silane coupling agent is also effective for improving the affinity at the interface between the various base materials present inside the semiconductor device and the cured product of the resin composition and improving the interfacial adhesion by forming a chemical bond. By using a silane coupling agent which is previously mixed by heating with a resin, it becomes easy to efficiently transfer to the interface with various base materials during molding of the epoxy resin composition. The silane coupling agent may be heated and mixed in advance with all epoxy resins and phenol resins, or may be heated and mixed with some epoxy resins or phenol resins.

On the other hand, the silane coupling agent, when present on the surface of the inorganic filler, chemically bonds the inorganic filler and the organic component in the epoxy resin composition, and is effective for improving the interfacial adhesion. Conceivable. Therefore, in order to improve the interfacial adhesion between the inorganic filler and the organic component, it is necessary that the silane coupling agent be present on the surface of the inorganic filler, and therefore the silane coupling agent represented by the general formula (1) By treating the surface of the inorganic filler in advance, the adhesiveness at the interface is improved, which is effective in improving the strength at heat and the solder resistance. As a method of treating the surface of the inorganic filler with a silane coupling agent, a solution of a silane coupling agent or an alcohol thereof is sprayed on the stirred inorganic filler, and further stirred, and then left at room temperature. By heating or heating, a surface-treated inorganic filler can be obtained. In addition to the surface-treated silane coupling agent, a method in which the silane coupling agent is mixed with an integral blend or an epoxy resin or a phenol resin by heating in advance may be used in combination.

The epoxy resin used in the present invention refers to all monomers, oligomers and polymers having an epoxy group, such as biphenyl type epoxy resin, bisphenol type epoxy resin, stilbene type epoxy resin and hydroquinone type epoxy resin. Epoxy resin,
Phenol aralkyl type epoxy resin, bisphenol A type epoxy resin, orthocresol novolak type epoxy resin, dicyclopentadiene modified phenol type epoxy resin, triphenol methane type epoxy resin, naphthol type epoxy resin and the like. Of these, a crystalline epoxy resin such as a biphenyl-type epoxy resin, a bisphenol-type epoxy resin, or a stilbene-type epoxy resin, which is highly filled with an inorganic filler and can reduce moisture absorption, increase strength, and reduce expansion, is preferable.

The crystalline epoxy resin used in the present invention includes various resins.
C. or less is preferable, and if it exceeds 150 ° C., it cannot be uniformly melted and melted sufficiently during melt-kneading, so that a molded article of the resin composition using this molten mixture becomes non-uniform, and the strength varies depending on each part. It is not preferable because the performance of the semiconductor device is reduced. Examples of the crystalline epoxy resin satisfying these conditions include a biphenyl type epoxy resin of the general formula (2), a bisphenol type epoxy resin of the general formula (3), and a stilbene type epoxy resin of the general formula (4). .

Embedded image (R ₃ is an alkyl group having 1 to 6 carbon atoms or represents a group,
They may be the same or different. m is 0-4
Integer)

[0013]

Embedded image

[0014]

Embedded image (R ₆ is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, which may be the same or different. R ₇ has 1 carbon atom.
And up to 6 alkyl groups, which may be the same or different. m is an integer from 0 to 4)

Examples of the biphenyl type epoxy resin of the general formula (2) include 4,4'-dihydroxybiphenyl, 4,4'-dihydroxy-3,3 ', 5,5'-tetramethylbiphenyl, 4,4 '-Dihydroxy-3,
3′-ditert-butyl-6,6′-dimethylbiphenyl, 2,2′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylbiphenyl, 4,4′-
Dihydroxy-3,3'-ditert-butyl-5,
Glycidyl etherified products of 5′-dimethylbiphenyl or 4,4′-dihydroxy-3,3 ′, 5,5′-tetratert-butylbiphenyl (including isomers having different substitution positions) are exemplified.

Examples of the bisphenol type epoxy resin represented by the general formula (3) include bis (4-hydroxyphenyl) methane, bis (3-methyl-4-hydroxyphenyl) methane, and bis (3,5-dimethyl-4-). Hydroxyphenyl) methane, bis (2,3,5-trimethyl-4)
-Hydroxyphenyl) methane, 1,1-bis (3 ′,
5'-dimethyl-4'-hydroxyphenyl) ethane,
2,2-bis (4′-hydroxyphenyl) propane,
2,2-bis (3′-methyl-4′-hydroxyphenyl) propane, 2,2-bis (3 ′, 5′-dimethyl-)
4'-hydroxyphenyl) propane, 2,2-bis (3'-tert-butyl-4'-hydroxyphenyl) propane, or bis (2-tert-butyl-5-
Glycidyl ether compounds such as methyl-4-hydroxyphenyl) sulfide.

The stilbene type epoxy resin of the general formula (4) is, for example, 3-tert-butyl-4,4'-
Dihydroxy-5,3'-dimethylstilbene, 3-tert-butyl-4,4'-dihydroxy-3 ', 6-
Dimethyl stilbene, 3-tert-butyl-2,4 '
-Dihydroxy-3 ', 5', 6-trimethylstilbene, 3-tert-butyl-4,4'-dihydroxy-
3 ′, 5 ′, 6-trimethylstilbene, 3-tert-butyl-4,4′-dihydroxy-3 ′, 5,5′-
Trimethylstilbene, 4,4'-dihydroxy-3,
3'-dimethylstilbene, 4,4'-dihydroxy-
3,3 ', 5,5'-tetramethylstilbene, 4,4
4'-dihydroxy-3,3'-ditertiarybutylstilbene, 4,4'-dihydroxy-3,3'-ditertiarybutyl-6,6'-dimethylstilbene, 2,
2'-dihydroxy-3,3'-ditert-butyl-
6,6′-dimethylstilbene, 2,4′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylstilbene, 2,2′-dihydroxy-3,3 ′,
5,5'-tetramethylstilbene, 4,4'-dihydroxy-3,3'-ditert-butyl-5,5'-dimethylstilbene, or 4,4'-dihydroxy-3,
Glycidyl ether compounds such as 3 ′, 5,5′-tetratert-butylstilbene (including isomers having different substitution positions) are exemplified.

Among them, 4,4'-dihydroxybiphenyl, 4,4'-dihydroxy-3,3 ', 5,5'-tetramethyl is preferred in view of availability, performance, raw material price and the like. Biphenyl, bis (3,5-dimethyl-4-
Hydroxyphenyl) methane, bis (2,3,5-trimethyl-4-hydroxyphenyl) methane, 2,2-bis (3′-methyl-4′-hydroxyphenyl) propane, 2,2-bis (3 ′, 5'-dimethyl-4'-hydroxyphenyl) propane, glycidyl etherified bis (2-tert-butyl-5-methyl-4-hydroxyphenyl) sulfide (the above seven epoxy resins are hereinafter referred to as group a); 3-tert-butyl-2,
4'-dihydroxy-3 ', 5', 6-trimethylstilbene, 3-tert-butyl-4,4'-dihydroxy-3 ', 5', 6-trimethylstilbene, 3-tert-butyl-4,4 ' -Dihydroxy-3 ', 5
Glycidyl etherified product of 5′-trimethylstilbene (the above three types of epoxy resins are hereinafter referred to as group b), 4,
4′-dihydroxy-3,3 ′, 5,5′-tetramethylstilbene, 4,4′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylstilbene,
2,2′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylstilbene, 2,4′-dihydroxy-3,3′-di-tert-butyl-6,6′-dimethylstilbene, 2, 2'-dihydroxy-3,
3 ', 5,5'-tetramethylstilbene, or 4,
4'-dihydroxy-3,3'-ditert-butyl-
One or more selected from glycidyl etherified products of 5,5′-dimethylstilbene (the above six types of epoxy resins are hereinafter referred to as group c) are preferred.

Of the group a, the biphenyl type epoxy resin has a high viscosity reducing effect and a high reactivity of 4,4 '.
Glycidyl ethers containing a dihydroxybiphenyl skeleton are preferred. In other group a, bis (3,5-dimethyl-4-hydroxyphenyl) methane, 2,2-bis (3 ′, 5′-dimethyl-4′-hydroxyphenyl) propane, bis (2-tert-butyl) Glycidyl etherified products of (-5-methyl-4-hydroxyphenyl) sulfide are preferred. In the stilbene type epoxy resin, a mixture of at least one selected from the group b and at least one selected from the group c is preferable because the melting point is low. The mixing ratio, mixing method, and the like are not particularly limited. For example, there is a method of mixing stilbene-type phenols, which are raw materials of the stilbene-type epoxy resin, before glycidyl etherification, or a method of melting and mixing both stilbene-type epoxy resins. Also, to improve the moisture resistance reliability,
It is desirable that chlorine ions, sodium ions, and other free ions be as small as possible.

The phenolic resin used in the present invention refers to all monomers, oligomers and polymers having a phenolic hydroxyl group in the molecule. Examples thereof include phenol novolak resin, cresol novolak resin, terpene-modified phenol resin, and dicyclopentadiene-modified phenol. Examples include, but are not limited to, resins, triphenolmethane type resins, phenol aralkyl resins having a phenylene and / or diphenylene skeleton. These phenol resins may be used alone or as a mixture. The equivalent ratio of the epoxy group of all epoxy resins to the phenolic hydroxyl group of all phenol resins is preferably 0.5 to 2.0, particularly preferably 0.7 to 1.5. If the ratio is outside the range of 0.5 to 2.0, the curability, the moisture resistance reliability and the like are undesirably reduced.

The kind of the inorganic filler used in the present invention is not particularly limited, and those generally used for a sealing material can be used. For example, fused silica, fused spherical silica, crystalline silica, secondary aggregated silica,
Alumina, titanium white, aluminum hydroxide and the like can be mentioned, and fused spherical silica is particularly preferred. The shape is preferably infinitely spherical, and the filling amount can be increased by mixing particles having different particle sizes. The blending amount of the inorganic filler is preferably from 75 to 94% by weight in the whole resin composition. If the amount is less than 75% by weight, the reinforcing effect of the inorganic filler is not sufficiently exhibited, and the amount of the resin component which is a factor of moisture absorption increases, so that the amount of moisture absorption of the cured product of the resin composition increases. This is not preferable because cracks tend to occur in the semiconductor device during the soldering process. If the content exceeds 94% by weight, the fluidity of the resin composition is reduced, and poor filling, chip shift, pad shift, and wire sweep are likely to occur during molding, which is not preferable. The inorganic filler used in the present invention may be previously treated with a coupling agent as described above, or may be used after being surface-treated with an epoxy resin or a phenol resin. Examples of the treatment method include a method of removing the solvent after mixing with a solvent, and a method of adding the mixture directly to the inorganic filler and treating with a mixer.

The curing accelerator used in the present invention includes:
Any substance that promotes a crosslinking reaction between an epoxy resin and a phenol resin may be used. Examples thereof include amine compounds such as 1,8-diazabicyclo (5,4,0) undecene-7, triphenylphosphine, and tetraphenylphosphonium. Organic phosphorus compounds such as tetraphenylborate salts, 2
Imidazole compounds such as -methylimidazole; and the like, but are not limited thereto. These curing accelerators may be used alone or as a mixture.

The epoxy resin composition of the present invention comprises (A)
In addition to the component (E), if necessary, brominated epoxy resins, antimony oxide, flame retardants such as phosphorus compounds, inorganic ion exchangers such as bismuth oxide hydrate, coloring agents such as carbon black and red iron oxide, silicone oil, Various additives such as a low-stress agent such as silicone rubber, a release agent such as natural wax, synthetic wax, higher fatty acid and its metal salts or paraffin, and an antioxidant can be blended. The epoxy resin composition of the present invention is obtained by mixing components (A) to (E) and other additives using a mixer,
It is obtained by melt-kneading with a kneader such as a heating kneader or an extruder, cooling and pulverizing. In order to manufacture a semiconductor device by encapsulating an electronic component such as a semiconductor element using the epoxy resin composition of the present invention, it is sufficient to cure and mold by a molding method such as a transfer mold, a compression mold, and an injection mold.

Hereinafter, the present invention will be described specifically with reference to Examples, but the present invention is not limited thereto. The mixing unit is parts by weight. Example 1 Epoxy resin having a structure of formula (5) as a main component (epoxy equivalent: 190, melting point: 105 ° C) 6.1 parts by weight Phenolic resin of formula (6) (hydroxyl equivalent: 174, softening point: 75 ° C) 7 parts by weight Silane coupling agent of formula (7) (hereinafter abbreviated as silane coupling agent A) 0.4 parts by weight Fused spherical silica powder 87.0 parts by weight 1,8-diazabicyclo (5,4,0) undecene -7 (hereinafter abbreviated as DBU) 0.3 part by weight Carnauba wax 0.2 part by weight Carbon black 0.3 part by weight was mixed using a mixer.
The mixture was kneaded 30 times using two rolls of 5 ° C., and the obtained kneaded material sheet was cooled and pulverized to obtain a resin composition. The obtained resin composition was evaluated by the following method. Table 1 shows the results.

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[0025]

Embedded image

[0026]

Embedded image

Evaluation method Spiral flow: Using a mold for measuring spiral flow according to EMMI-1-66, a mold temperature of 175 ° C.
It was measured at an injection pressure of 70 kg / cm ² and a curing time of 2 minutes.
The unit is cm. Heat strength: Flexural strength at 240 ° C. is determined according to JIS K 6911.
It measured according to. The unit is N / mm ² . Solder resistance: 100-pin TQFP (package size is 1
4 × 14 mm, thickness 1.4 mm, silicon chip size 8.0 × 8.0 mm, lead frame made of 42 alloy), mold temperature 175 ° C., injection pressure 75 kg / c
transfer molding with m ² , curing time 2 minutes, 175
Post-curing was performed at 8 ° C. for 8 hours. The obtained semiconductor package was placed in an environment of 85 ° C. and 85% relative humidity for 72 hours and 16 hours.
It was left for 8 hours and then immersed in a 240 ° C. solder bath for 10 seconds. Observe the external cracks with a microscope and check the number of cracks [(number of packages with cracks) / (total number of packages)
× 100] in%. The ratio of the peeling area between the chip and the cured product of the resin composition was measured using an ultrasonic flaw detector, and the peeling rate [(peeling area) / (chip area) × 100]
The average value of the five packages was determined and expressed in%.

Examples 2 to 8 and Comparative Examples 1 to 3 Each component was blended in the proportions shown in Table 1 to obtain a resin composition in the same manner as in Example 1, and evaluated in the same manner as in Example 1. Table 1 shows the results. The details of the epoxy resin, the phenol resin, the molten mixture, the coupling agent, and the hydrolyzate of the coupling agent other than those used in Example 1 are shown below. -Orthocresol novolak type epoxy resin (epoxy equivalent 196, softening point 55 ° C)-Epoxy resin having the structure of formula (8) as a main component (epoxy equivalent 187, melting point 110 ° C)-Phenol novolak resin (hydroxyl equivalent 105, softening) Point 105 ° C.) ・ The silane coupling agent of the formula (9) (hereinafter abbreviated as silane coupling agent B)

Embedded image

[0029]

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Production Example of Hydrolyzate of Silane Coupling Agent The silane coupling agent A used in Example 1 and pure water were mixed in 8 parts.
The mixture was mixed at 0:20, and the mixture was sufficiently stirred and mixed until the mixture did not separate into two layers to obtain a hydrolyzate. (Abbreviated as hydrolyzate of silane coupling agent A)-Example of production of molten mixture Melt mixture A 6.2 parts by weight of epoxy resin of formula (5) used in Example 1 and phenol resin of formula (6) After 7 parts by weight was completely melt-mixed at 110 ° C., 0.4 part by weight of the silane coupling agent A used in Example 1 was added to obtain a molten mixture A. Melt mixture B After completely melting 5.7 parts by weight of the phenol resin of the formula (6) used in Example 1 at 110 ° C., 0.2 part by weight of the silane coupling agent A used in Example 1 was added. A molten mixture B was obtained. Production Example of Treated Silica Treated fused spherical silica A 0.4 parts by weight of the silane coupling agent A used in Example 1 was added dropwise while stirring 87 parts by weight of the fused spherical silica used in Example 1 with a mixer. . Continue stirring 15
After continuing for minutes, the mixture was left at room temperature for 8 hours to obtain treated silica A. Treated fused spherical silica B While stirring 87 parts by weight of the fused spherical silica used in Example 1 with a mixer, 0.2 part by weight of the silane coupling agent A used in Example 1 was added dropwise. Continue stirring 15
After standing for 8 minutes at room temperature, the treated silica B
I got

[0031]

[Table 1]

[0032]

The semiconductor device using the epoxy resin composition of the present invention has excellent solder resistance without cracking or peeling off from the base material during the soldering process after moisture absorption.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) C08K 5/548 C08K 5/548 H01L 23/29 H01L 23/30 R 23/31 F-term (Reference) 4J002 CC04X CC05X CC06X CD04W CD05W CD06W CD07W CD11W CE00W CE00X DE136 DE146 DJ016 EU117 EU137 EW017 EW177 EX088 EY017 FD020 FD090 FD130 FD14X FD148 FD157 FD160 4J036 AA01 AC01 AC02 AC05 AD04 AD07 AD08 GA05 DC05 GA03 AA01 CA21 EA03 EB06 EC03 EC05

Claims (5)

[Claims] (A) an epoxy resin, (B) a phenolic resin, (C) an inorganic filler, (D) a curing accelerator, and (E) a silane coupling agent represented by the general formula (1),
Alternatively, an epoxy resin composition for semiconductor encapsulation, comprising a hydrolyzate obtained by hydrolyzing all or a part of the silane coupling agent. Embedded image (R ₁ is an alkoxy group having 1 to 10 carbon atoms, R ₂ is an alkoxy group having 1 carbon atom
10 to 10 alkyl groups. a is an integer of 1 to 3, m is 1
An integer from 1 to 5, and n is an integer from 1 to 10. ) 2. The method according to claim 1, wherein the epoxy resin (A) has the general formula (2):
The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the epoxy resin composition is at least one selected from general formulas (3) and (4). Embedded image (R ₃ is an alkyl group having 1 to 6 carbon atoms, which may be the same or different; m is an integer of 0 to 4) Embedded image (R ₆ is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, which may be the same or different. R ₇ has 1 carbon atom.
And up to 6 alkyl groups, which may be the same or different. m is an integer from 0 to 4) 3. The silane coupling agent represented by the general formula (1) or a hydrolyzate obtained by hydrolyzing all or a part of the silane coupling agent is (A) an epoxy resin or (B) 4. The epoxy resin composition for semiconductor encapsulation according to claim 1, which is preliminarily heated and mixed with all or a part of the phenol resin. 4. The silane coupling agent represented by the general formula (1) or a hydrolyzate obtained by hydrolyzing all or a part of the silane coupling agent is subjected to surface treatment of the inorganic filler (C) in advance. The epoxy resin composition for semiconductor encapsulation according to claim 1, 2 or 3, wherein 5. A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin composition according to claim 1.