JP2006104393A - Epoxy resin composition and semiconductor device - Google Patents

Epoxy resin composition and semiconductor device Download PDF

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JP2006104393A
JP2006104393A JP2004295465A JP2004295465A JP2006104393A JP 2006104393 A JP2006104393 A JP 2006104393A JP 2004295465 A JP2004295465 A JP 2004295465A JP 2004295465 A JP2004295465 A JP 2004295465A JP 2006104393 A JP2006104393 A JP 2006104393A
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epoxy resin
resin composition
semiconductor device
semiconductor
carboxylic acid
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Haruhiko Maeda
治彦 前田
Takashi Aihara
孝志 相原
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Sumitomo Bakelite Co Ltd
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Sumitomo Bakelite Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an epoxy resin composition high in adhesive strength to lead frame and excellent in reliability after undergoing soldering treatment, and to provide a semiconductor device. <P>SOLUTION: The epoxy resin composition for semiconductor sealing use comprises (A) an epoxy resin, (B) a phenolic resin, (C) a curing promoter, (D) an inorganic filler, (E) a compound having a triazine thiol structure and represented by the general formula(1) and (F) an aromatic carboxylic acid. The semiconductor device obtained by sealing semiconductor elements with this resin composition is also provided. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、半導体封止用エポキシ樹脂組成物、及びこれを用いた半導体装置に関するものである。   The present invention relates to an epoxy resin composition for semiconductor encapsulation and a semiconductor device using the same.

近年、半導体装置は生産性、コスト、信頼性等のバランスに優れることからエポキシ樹脂組成物を用いて封止されるのが主流となっている。半導体装置の表面実装化により半導体装置が半田浸漬あるいは半田リフロー工程で急激に200℃以上の高温にさらされ、吸水した水分が爆発的に気化する際の応力によって、半導体素子、リードフレーム、インナーリード上の各種メッキされた各接合部分とエポキシ樹脂組成物の硬化物の界面で剥離が生じたり、半導体装置にクラックが発生し信頼性が著しく低下する問題が生じている。   In recent years, semiconductor devices have been mainly sealed using an epoxy resin composition because of excellent balance of productivity, cost, reliability, and the like. Due to the surface mounting of the semiconductor device, the semiconductor device is suddenly exposed to a high temperature of 200 ° C. or higher in the solder dipping or solder reflow process, and the stress generated when the absorbed water vaporizes explosively causes the semiconductor element, lead frame, inner lead. There is a problem that peeling occurs at the interface between each of the above-mentioned various plated joint portions and the cured product of the epoxy resin composition, or cracks are generated in the semiconductor device and the reliability is remarkably lowered.

半田処理による信頼性低下を改善するために、エポキシ樹脂組成物中の無機充填材の充填量を増加させることで低吸湿化、高強度化、低熱膨張化を達成し耐半田性を向上させるとともに、低溶融粘度の樹脂を使用して、成形時に低粘度で高流動性を維持させる手法が一般的となりつつある。
一方、半田処理後の信頼性において、エポキシ樹脂組成物の硬化物と半導体装置内部に存在する半導体素子やリードフレーム等の基材との界面の接着性は非常に重要になってきている。界面での接着力が弱いと半田処理後の基材との界面で剥離が生じ、更にはこの剥離に起因し半導体装置にクラックが発生する。
従来から耐半田性の向上を目的として、γ−グリシドキシプロピルトリメトキシシランやγ−(メタクリロキシプロピル)トリメトキシシラン等のシランカップリング剤がエポキシ樹脂組成物中に添加されてきた。しかし近年、実装時のリフロー温度の上昇や、鉛フリーハンダに対応しNi−Pd、Ni−Pd−Au等のプリプレーティングフレームの出現等、益々厳しくなっている耐半田性に対する要求に対して、これらのシランカップリング剤だけでは充分に対応できなくなっている。
In order to improve reliability reduction due to solder processing, increase the amount of inorganic filler in the epoxy resin composition to achieve low moisture absorption, high strength, low thermal expansion, and improve solder resistance. A technique of maintaining low fluidity and high fluidity during molding using a low melt viscosity resin is becoming common.
On the other hand, in terms of reliability after soldering, the adhesiveness at the interface between a cured product of the epoxy resin composition and a substrate such as a semiconductor element or a lead frame existing inside the semiconductor device has become very important. If the adhesive force at the interface is weak, peeling occurs at the interface with the base material after the solder treatment, and further, cracks occur in the semiconductor device due to this peeling.
Conventionally, silane coupling agents such as γ-glycidoxypropyltrimethoxysilane and γ- (methacryloxypropyl) trimethoxysilane have been added to epoxy resin compositions for the purpose of improving solder resistance. However, in recent years, in response to the increasingly demanding soldering resistance, such as an increase in reflow temperature during mounting and the appearance of pre-plating frames such as Ni-Pd and Ni-Pd-Au in correspondence with lead-free solder, These silane coupling agents alone are not sufficient.

その対処法として、アルコキシシランカップリング剤によりリードフレームの表面処理をする方法(例えば、特許文献1参照。)やトリアジン化合物を添加した樹脂組成物及び樹脂封止型半導体装置(例えば、特許文献2及び特許文献3参照。)などが提案されている。しかしながら、前者のシランカップリング剤は、熱時安定性が悪く耐半田処理において密着向上効果が低下する欠点があり、また、後者の化合物は樹脂との反応性が低いために密着付与剤としての効果が少ないことがわかっていた。
また、近年になって環式窒素化合物を含有することにより銅合金リードフレームなどとの密着向上効果を得る方法(例えば、特許文献4参照。)などが提案されているが、これだけだと前記Ni−Pd、Ni−Pd−Au等のプリプレーティングフレームなどとの密着向上効果に乏しく、更なる改善が必要であることがわかっていた。
As a countermeasure, a lead frame surface treatment with an alkoxysilane coupling agent (see, for example, Patent Document 1), a resin composition to which a triazine compound is added, and a resin-encapsulated semiconductor device (for example, Patent Document 2). And Patent Document 3). However, the former silane coupling agent has a drawback that the stability during heat is poor and the effect of improving adhesion in the solder-resistant treatment is lowered, and the latter compound has low reactivity with the resin, so that it serves as an adhesion imparting agent. I knew it was less effective.
In recent years, a method for improving the adhesion with a copper alloy lead frame or the like by containing a cyclic nitrogen compound has been proposed (for example, see Patent Document 4). It has been found that the effect of improving the adhesion with a pre-plating frame such as -Pd or Ni-Pd-Au is scarce and further improvement is necessary.

特開平6−350000号公報(第2〜5頁)JP-A-6-350,000 (pages 2 to 5) 特開昭62−209170号公報(第2〜4頁)JP-A-62-209170 (pages 2 to 4) 特開2003−160643号公報(第2〜4頁)Japanese Unexamined Patent Publication No. 2003-160643 (pages 2 to 4) 特開2001−106768号公報(第2〜6頁)JP 2001-106768 A (pages 2 to 6)

本発明は、半田処理においてリードフレームとの剥離が発生しない、半田処理後の信頼性に優れたエポキシ樹脂組成物、及び半導体装置を提供するものである。   The present invention provides an epoxy resin composition excellent in reliability after soldering and a semiconductor device that does not peel off from a lead frame during soldering.

本発明は、
[1] (A)エポキシ樹脂、(B)フェノール樹脂、(C)硬化促進剤、(D)無機質充填材、(E)一般式(1)で表される化合物、及び(F)芳香族カルボン酸を含むことを特徴とする半導体封止用エポキシ樹脂組成物、
The present invention
[1] (A) Epoxy resin, (B) Phenolic resin, (C) Curing accelerator, (D) Inorganic filler, (E) Compound represented by general formula (1), and (F) Aromatic carvone An epoxy resin composition for semiconductor encapsulation, comprising an acid,

Figure 2006104393
(式中、R1、R2は炭素数1〜3のアルキル基であり、互いに同一でも異なっていてもよい。)
Figure 2006104393
(In the formula, R1 and R2 are alkyl groups having 1 to 3 carbon atoms, which may be the same as or different from each other.)

[2] 前記一般式(1)で表される化合物が、2−ジ−プロピルアミノ−4、6−ジメルカプト−s−トリアジンである第[1]項記載の半導体封止用エポキシ樹脂組成物、
[3] 前記一般式(1)で表される化合物が、樹脂組成物全体に対して0.004〜2重量%の割合で含有される第[1]又は[2]項記載の半導体封止用エポキシ樹脂組成物、
[4] 前記の芳香族カルボン酸が樹脂組成物全体に対して0.004〜2重量%の割合で含有される第[1]、[2]又は[3]項のいずれかに記載の半導体封止用エポキシ樹脂組成物、
[5] 前記の芳香族カルボン酸が、1分子当たり少なくとも2個以上のフェノール性水酸基と1分子あたり少なくとも1個以上のカルボキシル基を有する化合物である第[1]、[2]、[3]又は[4]項のいずれかに記載の半導体封止用エポキシ樹脂組成物、
[6] 第[1]、[2][3][4]又は[5]項のいずれかに記載のエポキシ樹脂組成物を用いて半導体素子を封止してなることを特徴とする半導体装置、
である。
[2] The epoxy resin composition for semiconductor encapsulation according to item [1], wherein the compound represented by the general formula (1) is 2-di-propylamino-4,6-dimercapto-s-triazine,
[3] The semiconductor encapsulation according to [1] or [2], wherein the compound represented by the general formula (1) is contained in a proportion of 0.004 to 2% by weight with respect to the entire resin composition. Epoxy resin composition for
[4] The semiconductor according to any one of [1], [2] or [3], wherein the aromatic carboxylic acid is contained in a proportion of 0.004 to 2% by weight based on the entire resin composition. Epoxy resin composition for sealing,
[5] The first [1], [2], [3], wherein the aromatic carboxylic acid is a compound having at least two phenolic hydroxyl groups per molecule and at least one carboxyl group per molecule. Or the epoxy resin composition for semiconductor encapsulation according to any one of [4],
[6] A semiconductor device comprising a semiconductor element sealed with the epoxy resin composition according to any one of [1], [2], [3], [4], and [5]. ,
It is.

本発明のエポキシ樹脂組成物を用いて得られた半導体装置は、Ni、Ni−Pd、Ni−Pd−Au等でメッキされたものも含めた各種リードフレームとの密着強度が強く、半田処理後の信頼性に優れている。   The semiconductor device obtained by using the epoxy resin composition of the present invention has high adhesion strength with various lead frames including those plated with Ni, Ni-Pd, Ni-Pd-Au, etc. Excellent in reliability.

本発明は、エポキシ樹脂、フェノール樹脂、硬化促進剤、無機質充填材、2−ジ−プロピルアミノ−4、6−ジメルカプト−s−トリアジン等のトリアジンチオール構造を有する化合物、及び芳香族カルボン酸を含むことにより、半田処理においてリードフレームとの剥離が発生しない、半田処理後の信頼性に優れた半導体封止用エポキシ樹脂組成物が得られるものである。
以下、本発明について詳細に説明する。
The present invention includes an epoxy resin, a phenol resin, a curing accelerator, an inorganic filler, a compound having a triazine thiol structure such as 2-di-propylamino-4, 6-dimercapto-s-triazine, and an aromatic carboxylic acid. Thus, it is possible to obtain an epoxy resin composition for semiconductor encapsulation excellent in reliability after solder processing, in which peeling from the lead frame does not occur during solder processing.
Hereinafter, the present invention will be described in detail.

本発明に用いられるエポキシ樹脂は、1分子中に2個以上のエポキシ基を有するモノマー、オリゴマー、ポリマー全般であり、その分子量、分子構造は特に限定するものではないが、例えば、ハイドロキノン型エポキシ樹脂、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビフェニル型エポキシ樹脂、スチルベン型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ナフトールノボラック型エポキシ樹脂、トリフェノールメタン型エポキシ樹脂、アルキル変性トリフェノールメタン型エポキシ樹脂、ジシクロペンタジエン変性フェノール型エポキシ樹脂、フェノールアラルキル型エポキシ樹脂(フェニレン骨格、ビフェニレン骨格等を有する)、ナフトールアラルキル型エポキシ樹脂(フェニレン骨格、ビフェニレン骨格等を有する)、テルペン変性フェノール型エポキシ樹脂、トリアジン核含有エポキシ樹脂等が挙げられる。これらのエポキシ樹脂は単独で用いても併用してもよい。   The epoxy resins used in the present invention are monomers, oligomers, and polymers in general having two or more epoxy groups in one molecule, and the molecular weight and molecular structure are not particularly limited. For example, hydroquinone type epoxy resins Bisphenol A type epoxy resin, bisphenol F type epoxy resin, biphenyl type epoxy resin, stilbene type epoxy resin, phenol novolac type epoxy resin, cresol novolak type epoxy resin, naphthol novolak type epoxy resin, triphenolmethane type epoxy resin, alkyl modified Triphenolmethane type epoxy resin, dicyclopentadiene modified phenol type epoxy resin, phenol aralkyl type epoxy resin (having phenylene skeleton, biphenylene skeleton, etc.), naphthol aralkyl type epoxy resin Carboxymethyl resin (phenylene skeleton, a biphenylene skeleton, etc.), terpene-modified phenol type epoxy resins, triazine nucleus-containing epoxy resins. These epoxy resins may be used alone or in combination.

本発明に用いられるフェノール樹脂としては、1分子中に2個以上のフェノール性水酸基を有するモノマー、オリゴマー、ポリマー全般であり、その分子量、分子構造は特に限定するものではないが、例えば、フェノールノボラック樹脂、クレゾールノボラック樹脂、フェノールアラルキル樹脂(フェニレン骨格、ビフェニレン骨格等を有する)、ナフトールアラルキル樹脂(フェニレン骨格、ビフェニレン骨格等を有する)、テルペン変性フェノール樹脂、ジシクロペンタジエン変性フェノール樹脂、トリフェノールメタン型フェノール樹脂、ビスフェノール化合物等が挙げられる。これらのフェノール樹脂は単独で用いても2種類以上併用してもよい。
全エポキシ樹脂のエポキシ基と全フェノール樹脂のフェノール性水酸基との当量比としては、好ましくは0.5〜2.0、特に好ましくは0.7〜1.5である。上記範囲を外れると、硬化性、耐湿信頼性等が低下する可能性がある。
Examples of the phenol resin used in the present invention include monomers, oligomers, and polymers in general having two or more phenolic hydroxyl groups in one molecule, and the molecular weight and molecular structure thereof are not particularly limited. Resin, cresol novolak resin, phenol aralkyl resin (having phenylene skeleton, biphenylene skeleton, etc.), naphthol aralkyl resin (having phenylene skeleton, biphenylene skeleton, etc.), terpene modified phenol resin, dicyclopentadiene modified phenol resin, triphenolmethane type A phenol resin, a bisphenol compound, etc. are mentioned. These phenol resins may be used alone or in combination of two or more.
The equivalent ratio of epoxy groups of all epoxy resins to phenolic hydroxyl groups of all phenol resins is preferably 0.5 to 2.0, particularly preferably 0.7 to 1.5. If it is out of the above range, curability, moisture resistance reliability and the like may be lowered.

本発明に用いられる硬化促進剤としては、エポキシ樹脂とフェノール樹脂との架橋反応の触媒となり得るものであればよく、一般に封止材料に使用するものを用いることができる。例えば、トリブチルアミン、1,8−ジアザビシクロ(5,4,0)ウンデセン−7等のアミン系化合物、トリフェニルホスフィン、テトラフェニルホスホニウム・テトラフェニルボレート塩等の有機リン系化合物、2−メチルイミダゾール等のイミダゾール化合物等が挙げられるが、これらに限定されるものではない。これらの硬化促進剤は単独で用いても併用してもよい。   The curing accelerator used in the present invention is not particularly limited as long as it can serve as a catalyst for a crosslinking reaction between an epoxy resin and a phenol resin, and those generally used for a sealing material can be used. For example, amine compounds such as tributylamine, 1,8-diazabicyclo (5,4,0) undecene-7, organic phosphorus compounds such as triphenylphosphine, tetraphenylphosphonium tetraphenylborate salts, 2-methylimidazole, etc. However, it is not limited to these. These curing accelerators may be used alone or in combination.

本発明に用いられる無機質充填材としては、一般に半導体封止用エポキシ樹脂組成物に使用されているものを用いることができ、例えば、溶融シリカ、結晶シリカ、アルミナ、窒化珪素、窒化アルミ等が挙げられる。これらの無機質充填材は単独で用いても併用してもよい。
無機質充填材の含有量を多くする場合、溶融シリカを用いるのが一般的である。溶融シリカは、破砕状、球状のいずれでも使用可能であるが、溶融シリカの含有量を高め、かつエポキシ樹脂組成物の溶融粘度の上昇を抑えるためには、球状のものを主に用いる方が好ましい。更に溶融球状シリカの配合量を多くするためには、溶融球状シリカの粒度分布がより広くなるように調整することが望ましい。無機質充填材は、予めシランカップリング剤等で表面処理されているものを用いてもよい。無機充填材の含有量は、特に限定されないが、全エポキシ樹脂組成物中65〜90重量%が好ましい。下限値を下回ると十分な耐半田性が得られない可能性があり、上限値を超えると十分な流動性が得られない可能性がある。
As the inorganic filler used in the present invention, those generally used for epoxy resin compositions for semiconductor encapsulation can be used, and examples thereof include fused silica, crystalline silica, alumina, silicon nitride, aluminum nitride and the like. It is done. These inorganic fillers may be used alone or in combination.
When increasing the content of the inorganic filler, it is common to use fused silica. The fused silica can be used in either crushed or spherical shape, but in order to increase the content of fused silica and to suppress the increase in the melt viscosity of the epoxy resin composition, it is better to mainly use the spherical one. preferable. Furthermore, in order to increase the blending amount of the fused spherical silica, it is desirable to adjust so that the particle size distribution of the fused spherical silica becomes wider. The inorganic filler that has been surface-treated with a silane coupling agent or the like in advance may be used. Although content of an inorganic filler is not specifically limited, 65 to 90 weight% is preferable in all the epoxy resin compositions. If the lower limit is not reached, sufficient solder resistance may not be obtained, and if the upper limit is exceeded, sufficient fluidity may not be obtained.

本発明で用いられる一般式(1)で表される化合物及び芳香族カルボン酸は、樹脂組成物の硬化物とリードフレームとの密着性を向上させ、ひいては樹脂組成物の硬化物で半導体素子を封止してなる半導体装置の耐湿信頼性、耐リフロークラック性を改善させる役割を果たす。

Figure 2006104393
(式中、R1、R2は炭素数1〜3のアルキル基であり、互いに同一でも異なっていてもよい。) The compound represented by the general formula (1) and the aromatic carboxylic acid used in the present invention improve the adhesion between the cured product of the resin composition and the lead frame. It plays the role of improving the moisture resistance reliability and reflow crack resistance of the sealed semiconductor device.
Figure 2006104393
(In the formula, R1 and R2 are alkyl groups having 1 to 3 carbon atoms, which may be the same as or different from each other.)

一般式(1)で表される化合物中のR1、R2は、炭素数1〜3のアルキル基であり、互いに同一でも異なっていてもよい。アルキル基の炭素数が上限値を超えると、置換アルキル基による立体障害が大きくなるため、リードフレームとの密着性が低下し、半導体装置としての信頼性も低下するので好ましくない。一般式(1)で表される化合物の例としては、式(2)で表される2−ジプロピルアミノ−4,6−ジメルカプト−s−トリアジン等が好適に使用できる。   R1 and R2 in the compound represented by the general formula (1) are alkyl groups having 1 to 3 carbon atoms, and may be the same as or different from each other. If the number of carbon atoms in the alkyl group exceeds the upper limit, steric hindrance due to the substituted alkyl group is increased, so that the adhesion to the lead frame is lowered and the reliability as a semiconductor device is also lowered. As an example of the compound represented by the general formula (1), 2-dipropylamino-4,6-dimercapto-s-triazine represented by the formula (2) can be preferably used.

Figure 2006104393
Figure 2006104393

一般式(1)で表される化合物の配合量については特に限定するものではないが、樹脂組成物全体に対して0.004〜2重量%であることが好ましい。上記の下限値を下回ると、樹脂組成物の硬化物とリードフレームとの密着性を向上させる効果が不充分となり、ひいては樹脂組成物の硬化物で半導体素子を封止してなる半導体装置の耐湿信頼性、耐リフロークラック性を改善させる効果が不充分となる恐れがあるので好ましくない。また、上記の上限値を超えると、樹脂組成物の流動性が低下する恐れがあるので好ましくない。   Although the compounding quantity of the compound represented by General formula (1) is not specifically limited, It is preferable that it is 0.004 to 2 weight% with respect to the whole resin composition. Below the lower limit, the effect of improving the adhesion between the cured product of the resin composition and the lead frame becomes insufficient, and consequently the moisture resistance of the semiconductor device formed by sealing the semiconductor element with the cured product of the resin composition. This is not preferable because the effect of improving the reliability and reflow crack resistance may be insufficient. Moreover, when the above upper limit is exceeded, the fluidity of the resin composition may be lowered, which is not preferable.

本発明で用いられる芳香族カルボン酸の配合量としては、特に限定するものではないが、全エポキシ樹脂組成物に対して0.004〜2重量%の割合で含有されることが好ましい。上記下限値を下回ると、樹脂組成物の硬化物とリードフレームとの密着性を向上させる効果が不充分となる恐れがあるので好ましくない。一方、上記上限値を超えると、樹脂組成物の流動性が低下する恐れがあるので好ましくない。
本発明で用いられる芳香族カルボン酸としては、分子構造を特に限定するものではないが、1分子あたり少なくとも2個以上のフェノール性水酸基と1分子あたり少なくとも1個以上のカルボキシル基を有する化合物が、密着性向上という観点でより好ましい。1分子あたり少なくとも2個以上のフェノール性水酸基と1分子あたり少なくとも1個以上のカルボキシル基を有する化合物としては、例えば、下記一般式(3)、一般式(4)で表される化合物などを挙げることができる。
Although it does not specifically limit as a compounding quantity of the aromatic carboxylic acid used by this invention, It is preferable to contain in the ratio of 0.004 to 2 weight% with respect to all the epoxy resin compositions. Below the lower limit, the effect of improving the adhesion between the cured product of the resin composition and the lead frame may be insufficient, which is not preferable. On the other hand, when the above upper limit is exceeded, the fluidity of the resin composition may be lowered, which is not preferable.
The aromatic carboxylic acid used in the present invention is not particularly limited in molecular structure, but a compound having at least two phenolic hydroxyl groups per molecule and at least one carboxyl group per molecule, It is more preferable from the viewpoint of improving adhesion. Examples of the compound having at least two phenolic hydroxyl groups per molecule and at least one carboxyl group per molecule include compounds represented by the following general formulas (3) and (4). be able to.

Figure 2006104393
Figure 2006104393

Figure 2006104393
Figure 2006104393

本発明のエポキシ樹脂組成物は、エポキシ樹脂、フェノール樹脂、硬化促進剤、無機充填材、一般式(1)で表される化合物、及び芳香族カルボン酸の他、必要に応じて、シランカップリング剤、チタネートカップリング剤、アルミニウムカップリング剤、アルミニウム/ジルコニウムカップリング剤等のカップリング剤、臭素化エポキシ樹脂、酸化アンチモン、リン化合物等の難燃剤、酸化ビスマス水和物等の無機イオン交換体、カーボンブラック、ベンガラ等の着色剤、シリコーンオイル、シリコーンゴム等の低応力化剤、天然ワックス、合成ワックス、高級脂肪酸及びその金属塩類もしくはパラフィン等の離型剤、酸化防止剤等の各種添加剤を適宜配合してもよい。   The epoxy resin composition of the present invention includes an epoxy resin, a phenol resin, a curing accelerator, an inorganic filler, a compound represented by the general formula (1), and an aromatic carboxylic acid, and if necessary, a silane coupling. Agent, titanate coupling agent, aluminum coupling agent, coupling agent such as aluminum / zirconium coupling agent, flame retardant such as brominated epoxy resin, antimony oxide, phosphorus compound, inorganic ion exchanger such as bismuth oxide hydrate , Colorants such as carbon black and bengara, low stress agents such as silicone oil and silicone rubber, natural wax, synthetic wax, release agents such as higher fatty acids and their metal salts or paraffin, and various additives such as antioxidants May be appropriately blended.

本発明のエポキシ樹脂組成物は、エポキシ樹脂、フェノール樹脂、硬化促進剤、無機充填材、一般式(1)で表される化合物、芳香族カルボン酸、及びその他の添加剤等をミキサーを用いて混合後、ロール、ニーダー、押出機等の混練機で加熱混練し、冷却後粉砕して得られる。
本発明のエポキシ樹脂組成物を用いて、半導体素子等の電子部品を封止し、半導体装置を製造するには、トランスファーモールド、コンプレッションモールド、インジェクションモールド等の成形方法で硬化成形すればよい。
The epoxy resin composition of the present invention contains an epoxy resin, a phenol resin, a curing accelerator, an inorganic filler, a compound represented by the general formula (1), an aromatic carboxylic acid, and other additives using a mixer. After mixing, the mixture is obtained by kneading with a kneader such as a roll, a kneader or an extruder, and pulverizing after cooling.
In order to seal an electronic component such as a semiconductor element and manufacture a semiconductor device using the epoxy resin composition of the present invention, it may be cured by a molding method such as a transfer mold, a compression mold, or an injection mold.

以下、本発明を実施例にて説明するが、本発明はこれらに限定されるものではない。配合単位は重量部とする。
実施例1
EXAMPLES Hereinafter, although an Example demonstrates this invention, this invention is not limited to these. The blending unit is parts by weight.
Example 1

エポキシ樹脂1:式(5)で示されるエポキシ樹脂(軟化点58℃、エポキシ当量272) 8.2重量部

Figure 2006104393
Epoxy resin 1: epoxy resin represented by formula (5) (softening point: 58 ° C., epoxy equivalent: 272) 8.2 parts by weight
Figure 2006104393

フェノール樹脂1:式(6)で示されるフェノール樹脂(軟化点107℃、水酸基当量200) 6.0重量部

Figure 2006104393
Phenol resin 1: phenol resin represented by the formula (6) (softening point 107 ° C., hydroxyl group equivalent 200) 6.0 parts by weight
Figure 2006104393

1,8−ジアザビシクロ(5,4,0)ウンデセン−7(以下、DBUという)
0.2重量部
溶融球状シリカ(平均粒径28μm) 84.9重量部
1,8-diazabicyclo (5,4,0) undecene-7 (hereinafter referred to as DBU)
0.2 part by weight Fused spherical silica (average particle size 28 μm) 84.9 parts by weight

式(2)で示される2−ジプロピルアミノ−4,6−ジメルカプト−s−トリアジン(試薬) 0.1重量部

Figure 2006104393
2-dipropylamino-4,6-dimercapto-s-triazine (reagent) represented by the formula (2) 0.1 part by weight
Figure 2006104393

式(7)で示される2,5―ジヒドロキシ安息香酸 0.1重量部

Figure 2006104393
0.1 part by weight of 2,5-dihydroxybenzoic acid represented by the formula (7)
Figure 2006104393

カルナバワックス 0.2重量部
カーボンブラック 0.3重量部
をミキサーを用いて混合した後、表面温度が90℃と25℃の2本ロールを用いて混練し、冷却後粉砕してエポキシ樹脂組成物を得た。得られたエポキシ樹脂組成物の特性を以下の方法で評価した。結果を表1に示す。
Carnauba wax 0.2 parts by weight Carbon black 0.3 parts by weight was mixed using a mixer, then kneaded using two rolls with surface temperatures of 90 ° C. and 25 ° C., cooled and pulverized to obtain an epoxy resin composition. Got. The characteristics of the obtained epoxy resin composition were evaluated by the following methods. The results are shown in Table 1.

評価方法
スパイラルフロー:EMMI−1−66に準じたスパイラルフロー測定用の金型を用いて、金型温度175℃、注入圧力6.9MPa、硬化時間120秒の条件で測定した。単位はcm。
Evaluation method Spiral flow: Using a mold for spiral flow measurement according to EMMI-1-66, measurement was performed under conditions of a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, and a curing time of 120 seconds. The unit is cm.

密着強度:トランスファー成形機を用いて、金型温度175℃、注入圧力9.8MPa、硬化時間120秒の条件で、9×29mmの短冊状の試験用リードフレーム上に2mm×2mm×2mmの密着強度試験片を1水準当たり10個成形した。リードフレームには銅フレームに銀メッキしたもの(フレーム1)とNiPd合金フレームに金メッキしたもの(フレーム2)の2種類を用いた。その後、自動せん断強度測定装置(DAGE社製、PC2400)を用いて、エポキシ樹脂組成物の硬化物とリードフレームとのせん断強度を測定した。10個の試験片のせん断強度の平均値を表1に示す。単位はN/mm2Adhesion strength: 2 mm x 2 mm x 2 mm adhesion on a 9 x 29 mm strip test lead frame using a transfer molding machine under conditions of a mold temperature of 175 ° C, an injection pressure of 9.8 MPa, and a curing time of 120 seconds Ten strength test pieces were molded per level. Two types of lead frames were used: a silver plated copper frame (frame 1) and a gold plated NiPd alloy frame (frame 2). Then, the shear strength of the cured product of the epoxy resin composition and the lead frame was measured using an automatic shear strength measuring device (manufactured by DAGE, PC2400). Table 1 shows the average value of the shear strength of 10 test pieces. The unit is N / mm 2 .

耐半田性:176ピンLQFPパッケージ(パッケージサイズは24×24mm、厚み2.0mm、シリコンチップのサイズは、8.0×8.0mm、リードフレームは176pinプリプレーティングフレーム、NiPd合金にAuメッキ加工したもの。)を、金型温度175℃、注入圧力9.3MPa、硬化時間120秒の条件でトランスファー成形し、175℃で8時間の後硬化をした。得られたパッケージを85℃、相対湿度60%の環境下で168時間加湿処理した。その後このパッケージを260℃の半田槽に10秒間浸漬した。半田処理を行ったパッケージを超音波探傷装置を用いて観察し、チップ(SiNコート品)とエポキシ樹脂組成物の硬化物との界面に剥離が発生した剥離発生率[(剥離発生パッケージ数)/(全パッケージ数)×100]を%で表示した。   Solder resistance: 176-pin LQFP package (package size is 24 x 24 mm, thickness is 2.0 mm, silicon chip size is 8.0 x 8.0 mm, lead frame is 176 pin pre-plating frame, NiPd alloy is Au plated Was molded by transfer molding under conditions of a mold temperature of 175 ° C., an injection pressure of 9.3 MPa, and a curing time of 120 seconds, and post-cured at 175 ° C. for 8 hours. The resulting package was humidified for 168 hours in an environment of 85 ° C. and a relative humidity of 60%. Thereafter, this package was immersed in a solder bath at 260 ° C. for 10 seconds. The soldered package was observed using an ultrasonic flaw detector, and the occurrence rate of peeling at the interface between the chip (SiN coated product) and the cured epoxy resin composition [(number of peeling occurrence packages) / (Total number of packages) × 100] is displayed in%.

実施例2〜7、比較例1〜3
表1の配合に従い、実施例1と同様にしてエポキシ樹脂組成物を得、実施例1と同様にして評価した。これらの結果を表1に示す。用いたエポキシ樹脂及びフェノール樹脂の詳細は表2に示す。
また、実施例1以外で用いたその他の成分について、以下に示す。
Examples 2-7, Comparative Examples 1-3
According to the composition of Table 1, an epoxy resin composition was obtained in the same manner as in Example 1 and evaluated in the same manner as in Example 1. These results are shown in Table 1. The details of the epoxy resin and phenol resin used are shown in Table 2.
Moreover, it shows below about the other component used except Example 1. FIG.

式(8)で示される2−ジメチルアミノ−4,6−ジメルカプト−s−トリアジン

Figure 2006104393
2-Dimethylamino-4,6-dimercapto-s-triazine represented by the formula (8)
Figure 2006104393

式(9)で示される4’,4”−ジヒドロキシトリフェニルメタン−2−カルボン酸

Figure 2006104393
4 ′, 4 ″ -dihydroxytriphenylmethane-2-carboxylic acid represented by the formula (9)
Figure 2006104393

γ−グリシドキシプロピルトリメトキシシラン
実施例の2−ジプロピルアミノ−4,6−ジメルカプト−s−トリアジン及び2,5−ジヒドロキシ安息香酸を添加したエポキシ樹脂組成物は、リードフレームとの密着強度が高く、また、耐半田性に優れているという結果が得られた。また、実施例2に示すとおり、樹脂の種類を変えても、2−ジプロピルアミノ−4,6−ジメルカプト−s−トリアジン及び2,5−ジヒドロキシ安息香酸を添加することにより高い密着強度と優れた耐半田性が得られた。実施例3、4は2−ジプロピルアミノ−4,6−ジメルカプト−s−トリアジン及び2,5−ジヒドロキシ安息香酸の添加量を変化させたものであるが、いずれも実施例1と同程度の密着強度と耐半田性が得られた。また、実施例5は実施例1において2,5−ジヒドロキシ安息香酸の替わりに4’,4”−ジヒドロキシトリフェニルメタン−2−カルボン酸を用いたものであるが、実施例1と同程度の密着強度と耐半田性が得られた。また、実施例6は実施例1において2−ジプロピルアミノ−4,6−ジメルカプト−s−トリアジンの替わりに2−ジメチルアミノ−4,6−ジメルカプト−s−トリアジンを用いたものであるが、この場合も実施例1と同程度の密着強度と耐半田性が得られた。
γ-Glycidoxypropyltrimethoxysilane An epoxy resin composition to which 2-dipropylamino-4,6-dimercapto-s-triazine and 2,5-dihydroxybenzoic acid of Example are added has an adhesion strength with a lead frame. As a result, the results were high and the solder resistance was excellent. Moreover, as shown in Example 2, even if the type of resin is changed, high adhesion strength and excellent performance can be obtained by adding 2-dipropylamino-4,6-dimercapto-s-triazine and 2,5-dihydroxybenzoic acid. Solder resistance was obtained. In Examples 3 and 4, the addition amounts of 2-dipropylamino-4,6-dimercapto-s-triazine and 2,5-dihydroxybenzoic acid were changed. Adhesion strength and solder resistance were obtained. Further, Example 5 uses 4 ′, 4 ″ -dihydroxytriphenylmethane-2-carboxylic acid in place of 2,5-dihydroxybenzoic acid in Example 1, but the same degree as in Example 1. Adhesive strength and solder resistance were obtained, and in Example 6, instead of 2-dipropylamino-4,6-dimercapto-s-triazine in Example 1, 2-dimethylamino-4,6-dimercapto- Although s-triazine was used, in this case as well, adhesion strength and solder resistance comparable to those of Example 1 were obtained.

比較例1は芳香族カルボン酸を添加しない系であるが、密着強度はそこそこ高いものの、耐半田性は劣る結果が得られた。比較例2は式(1)で表されるトリアジンチオール構造を有する化合物を添加しない系であるが、密着強度はそこそこ高いものの、耐半田性は劣る結果が得られた。また、比較例3は耐半田性の向上のための添加剤として従来から用いられてきたγ−グリシドキシプロピルトリメトキシシランを用いたものであるが、密着強度と耐半田性の結果が式(1)で表されるトリアジンチオール構造を有する化合物及び芳香族カルボン酸を添加した実施例1〜5よりも明らかに劣る結果が得られた。   Although Comparative Example 1 is a system in which no aromatic carboxylic acid is added, the adhesion strength is moderately high, but the results are poor in solder resistance. Comparative Example 2 is a system in which a compound having a triazine thiol structure represented by the formula (1) is not added, but although the adhesion strength is moderately high, the result of inferior solder resistance was obtained. Comparative Example 3 uses γ-glycidoxypropyltrimethoxysilane, which has been conventionally used as an additive for improving solder resistance. The results of adhesion strength and solder resistance are expressed by equations. The result clearly inferior to Examples 1-5 which added the compound which has a triazine thiol structure represented by (1), and aromatic carboxylic acid was obtained.

Figure 2006104393
Figure 2006104393

Figure 2006104393
Figure 2006104393

本発明のエポキシ樹脂組成物を用いて得られた半導体装置は、リードフレームとの密着強度が強く、半田処理後の信頼性に優れることになるため、本発明のエポキシ樹脂組成物は各種の樹脂封止型半導体装置に広く用いることができる。特に樹脂組成物の硬化物とメッキを施された銅リードフレーム(銀メッキリードフレーム、ニッケルメッキリードフレーム、ニッケル/パラジウム合金に金メッキが施されたプレプリーティングフレーム等)との密着性を向上させる効果が顕著であるため、メッキ付きリードフレームを使用する半導体装置に好適に用いることができる。   Since the semiconductor device obtained using the epoxy resin composition of the present invention has high adhesion strength with the lead frame and is excellent in reliability after soldering, the epoxy resin composition of the present invention is a variety of resins. It can be widely used for sealed semiconductor devices. In particular, it improves the adhesion between the cured resin composition and the plated copper lead frame (silver plated lead frame, nickel plated lead frame, nickel / palladium alloy gold preplated frame, etc.). Since the effect is remarkable, it can be suitably used for a semiconductor device using a plated lead frame.

Claims (6)

(A)エポキシ樹脂、(B)フェノール樹脂、(C)硬化促進剤、(D)無機質充填材、(E)一般式(1)で表される化合物、及び(F)芳香族カルボン酸を含むことを特徴とする半導体封止用エポキシ樹脂組成物。
Figure 2006104393
(式中、R1、R2は炭素数1〜3のアルキル基であり、互いに同一でも異なっていてもよい。)
Including (A) epoxy resin, (B) phenol resin, (C) curing accelerator, (D) inorganic filler, (E) compound represented by general formula (1), and (F) aromatic carboxylic acid An epoxy resin composition for semiconductor encapsulation characterized by the above-mentioned.
Figure 2006104393
(In the formula, R1 and R2 are alkyl groups having 1 to 3 carbon atoms, which may be the same as or different from each other.)
前記一般式(1)で表される化合物が、2−ジ−プロピルアミノ−4、6−ジメルカプト−s−トリアジンである請求項1記載の半導体封止用エポキシ樹脂組成物。 The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the compound represented by the general formula (1) is 2-di-propylamino-4,6-dimercapto-s-triazine. 前記一般式(1)で表される化合物が、樹脂組成物全体に対して0.004〜2重量%の割合で含有される請求項1又は2記載の半導体封止用エポキシ樹脂組成物。 The epoxy resin composition for semiconductor encapsulation according to claim 1 or 2, wherein the compound represented by the general formula (1) is contained in a proportion of 0.004 to 2% by weight with respect to the entire resin composition. 前記の芳香族カルボン酸が樹脂組成物全体に対して0.004〜2重量%の割合で含有される請求項1、2又は3のいずれかに記載の半導体封止用エポキシ樹脂組成物。 4. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the aromatic carboxylic acid is contained in a proportion of 0.004 to 2% by weight with respect to the entire resin composition. 前記の芳香族カルボン酸が、1分子当たり少なくとも2個以上のフェノール性水酸基と1分子あたり少なくとも1個以上のカルボキシル基を有する化合物である請求項1、2、3又は4のいずれかに記載の半導体封止用エポキシ樹脂組成物。 5. The compound according to claim 1, wherein the aromatic carboxylic acid is a compound having at least two phenolic hydroxyl groups per molecule and at least one carboxyl group per molecule. Epoxy resin composition for semiconductor encapsulation. 請求項1、2、3、4又は5のいずれかに記載のエポキシ樹脂組成物を用いて半導体素子を封止してなることを特徴とする半導体装置。 A semiconductor device comprising a semiconductor element sealed with the epoxy resin composition according to claim 1.
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