JPH11286594A - Resin composition for sealing and semiconductor-sealed device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor-sealed device having improved adhesivity between a preplating frame especially comprising Pd.Pd-Au, or the like and to obtain a resin composition, having improved reflow resistance, preventing the deterioration in the moisture resistance of the resin after reflowed, and having high reliability. SOLUTION: This resin composition for sealing semiconductors comprises (A) an epoxy resin, (B) a novolac type phenolic resin, (C) a 2-di-n-butylamino-4,6- dimercapto-s-triazine and (D) an inorganic filler as essential components. Therein, (C) the 2-di-n-butylamino-4,6-dimercapto-s-triazine and (D) the inorganic filler are preferably compounded in amounts of 0.0004-0.2 wt.% and 25-95 wt.%, respectively, based on the resin composition. The semiconductor-sealed device is obtained by sealing a semiconductor chip with is composition.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to Pd, Au, Ag
The present invention relates to an epoxy resin composition excellent in reliability such as reflow crack resistance in a semiconductor package using a plated frame and a semiconductor sealing device.

[0002]

2. Description of the Related Art In recent semiconductor devices, the number of semiconductor packages employing a frame plated with Pd or Pd-Au instead of solder plating is increasing.

[0003] Conventional semiconductor devices employing a pre-plating frame of Pd or Pd-Au sealed with a resin composition comprising an epoxy resin, a novolak-type phenol resin and an inorganic filler, are not sealed with the pre-plating frame. There was a drawback that the adhesion to the resin was extremely poor. In particular, when a semiconductor device that has absorbed moisture is surface-mounted by an infrared (IR) reflow method, peeling occurs between the sealing resin and the lead frame or between the sealing resin and the semiconductor chip, causing remarkable moisture resistance deterioration and disconnection due to corrosion of the electrode. Leakage current due to moisture or moisture, and as a result, the semiconductor device has a drawback that long-term reliability cannot be guaranteed. For this reason, there has been a strong demand for the development of a material which has little influence on moisture resistance and has good moldability with little moisture resistance deterioration even if surface mounting of the entire semiconductor device is performed by IR reflow.

[0004]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned drawbacks and to meet the above-mentioned demands.
d, Pd-Au, Ag, etc., high adhesiveness to a pre-plating frame, particularly excellent in reflow resistance and reliability after reflow, good moldability, sealing resin composition and semiconductor sealing device It is intended to provide.

[0005]

Means for Solving the Problems The inventors of the present invention have conducted intensive studies to achieve the above object, and as a result, have found that
By blending di-n-butylamino-4,6-dimercapto-s-triazine, the adhesion to a pre-plating frame of Pd, Pd-Au, Ag, etc. is greatly improved, and the above object is achieved. The present invention has been completed.

That is, the present invention provides (A) an epoxy resin,
(B) Novolak-type phenol resin, (C) 2-di-n-butylamino-4,6-dimercapto-s-triazine and (D) an inorganic filler are essential components, (C) 2-di-n-butylamino-4,6-dimercapto-s-triazine in a proportion of 0.0004 to 0.2% by weight and the inorganic filler of (D) in a proportion of 25 to 95% by weight. It is a resin composition for sealing characterized by becoming.
Further, there is provided a semiconductor encapsulation device wherein a semiconductor chip is encapsulated by a cured product of the encapsulating resin composition.

Hereinafter, the present invention will be described in detail.

The epoxy resin (A) used in the present invention is not particularly limited in molecular structure and molecular weight, as long as it is a compound having at least two epoxy groups in the molecule, and is generally used as a sealing material. Can be widely encompassed. For example, biphenyl type, bisphenol type aromatic type, aliphatic type such as cyclohexane derivative, and epoxy novolak type epoxy resin represented by the following general formula can be used.

[0009]

Embedded image (In the formula, R ¹ represents a hydrogen atom, a halogen atom or an alkyl group, R ² represents a hydrogen atom or an alkyl group, and n represents an integer of 1 or more.) These epoxy resins may be used alone or in combination of two or more. They can be used in combination. As the novolak type phenol resin (B) used in the present invention, novolak type phenol resins obtained by reacting phenols such as phenol and alkylphenol with aldehydes such as formaldehyde and paraformaldehyde, and modified resins thereof, for example, epoxidation Or butylated novolak type phenolic resin and the like,
These resins are used alone or in combination of two or more. The mixing ratio of the novolak type phenol resin is such that the equivalent ratio [(a) / (b)] of the epoxy group (a) of the epoxy resin to the phenolic hydroxyl group (b) of the novolak type phenol resin is in the range of 0.1 to 10. It is desirable to be within. If the equivalent ratio is less than 0.1 or more than 10, heat resistance, moisture resistance, molding workability, and electrical properties of the cured product are deteriorated, and any case is not preferable. Therefore, it is better to limit to the above range. (C) 2-di-n- used in the present invention
Butylamino-4,6-dimercapto-s-triazine is represented by the following structural formula.

[0010]

Embedded image Further, other vulcanization accelerators and zinc oxide can be used in combination with 2-di-n-butylamino-4,6-dimercapto-s-triazine.

The compounding ratio of 2-di-n-butylamino-4,6-dimercapto-s-triazine is desirably 0.0004 to 0.2% by weight based on the whole resin composition. When the proportion is less than 0.0004% by weight, it has no effect on the improvement of the adhesion to the pre-plating frame of Pd, Pd-Au, Ag, etc., and when it exceeds 0.2% by weight, it has an adverse effect on the curing of the sealing resin and the like. Given, unsuitable for practical use.

The inorganic filler (D) used in the present invention includes silica powder, alumina powder, antimony trioxide, talc, calcium carbonate, titanium white, clay, mica, red iron oxide, glass fiber and the like. Alternatively, two or more kinds can be used in combination. Among these, silica powder and alumina powder are particularly preferable and are often used. The inorganic filler is desirably contained in a proportion of 25 to 95% by weight based on the whole resin composition. If the proportion is less than 25% by weight, heat resistance, moisture resistance,
Solder heat resistance, mechanical properties, and moldability deteriorate, and if it exceeds 95% by weight, burrs increase, resulting in poor moldability and not suitable for practical use.

The encapsulating resin composition of the present invention comprises an epoxy resin, a novolak type phenol resin, 2-di-n-butylamino-4,6-dimercapto-s-triazine and an inorganic filler as essential components. A release agent such as a natural wax, a synthetic wax, a metal salt of a linear fatty acid, an acid amide, an ester, or a paraffin; paraffin,
Flame retardants such as brominated toluene, hexabromobenzene and antimony trioxide, coloring agents such as carbon black and red iron, various curing accelerators and the like can be appropriately added and blended.

The general methods for preparing the encapsulating resin composition of the present invention as a molding material include epoxy resin, novolak type phenol resin, 2-di-n-butylamino-4,6-dimercapto- After blending s-triazine, inorganic filler and other components and mixing them sufficiently uniformly with a mixer, etc., further perform a melt mixing process with a hot roll or a mixing process with a kneader, etc., and then cool and solidify to obtain an appropriate size. Into a molding material. If the molding material thus obtained is applied to sealing, coating, insulating, etc. of electronic parts or electric parts such as semiconductor devices, excellent properties and reliability can be imparted.

The semiconductor sealing device of the present invention can be easily manufactured by sealing a semiconductor chip using the sealing resin obtained as described above. The most common sealing method is a low-pressure transfer molding method, but sealing by injection molding, compression molding, casting or the like is also possible. The sealing resin composition is heated and cured at the time of sealing, and finally a semiconductor sealing device sealed with a cured product of this composition is obtained. 150 ° C for curing by heating
It is desirable to cure by heating as described above. The semiconductor device for sealing is not particularly limited, for example, with an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and the like.

[0016]

The resin composition for encapsulation and the semiconductor encapsulation device of the present invention have the desired properties by using 2-di-n-butylamino-4,6-dimercapto-s-triazine as a resin component. Is obtained. That is, 2-di-n-butylamino-4,6-dimercapto-s-triazine improves the adhesive strength between the resin composition and a pre-plating frame of Pd, Pd-Au, Ag, etc., and is resistant to semiconductor packages. Reliability, such as reflow cracking, can be improved.

[0017]

Next, the present invention will be described with reference to examples, but the present invention is not limited to these examples. In the following Examples and Comparative Examples, “%” means “% by weight”.

Example 1 Cresol novolak epoxy resin (epoxy equivalent 215)
) 19%, 9% of novolak type phenol resin (phenol equivalent 107), 0.04% of the compound shown in the following chemical formula 3,

[0019]

Embedded image Mix 80% fused silica powder, 0.2% ester wax, 0.19% curing accelerator and 0.4% silane coupling agent, mix at room temperature, knead at 90-95 ° C, cool and pulverize and mold The material was manufactured. 170
Transfer was injected into a mold heated to ℃ and cured to form a molded product (sealed product). About this molded product,
Properties such as moisture resistance were tested, and the results are shown in Table 1. In particular, a remarkable effect of the present invention was recognized on moisture resistance.

Example 2 Biphenyl type epoxy resin (epoxy equivalent: 213) 6.6%
Novolak type phenol resin (phenol equivalent 107
) 3.2%, 0.04% of the compound of the above formula 3, silica powder 9
0%, ester waxes 0.2%, curing catalyst 0.14% and silane coupling agent 0.5% were mixed, kneaded and pulverized in the same manner as in Example 1 to produce a molding material. In addition, a molded product was prepared in the same manner as in Example 1, and a characteristic test such as moisture resistance was performed. The results are shown in Table 1. In particular, a remarkable effect of the present invention was recognized on moisture resistance.

Example 3 Biphenyl type epoxy resin (epoxy equivalent: 215) 5.0%
And phenol aralkyl resin (phenol equivalent 175)
4.15%, 0.04% of the compound of the above formula 3, 0.14 of curing catalyst
%, Silane coupling agent 0.5%, silica powder 90% and ester wax 0.2% as in Example 1.
The mixture was kneaded and pulverized to produce a molding material. In addition, a molded article was prepared in the same manner as in Example 1, and properties such as moisture resistance were tested. The results are shown in Table 1. In particular, a remarkable effect of the present invention was recognized on moisture resistance.

Comparative Example Cresol novolak type epoxy resin (epoxy equivalent 19
5) To 12.5%, novolak type phenol resin (phenol equivalent: 104) 6.7%, silica powder 80%, curing accelerator 0.19
%, Ester waxes 0.2% and silane coupling agent 0.4% were mixed to produce a molding material in the same manner as in Example 1. A molded article was formed using this molding material, and a test was performed on various characteristics of the molded article in the same manner as in Example 1. The results are shown in Table 1.

[0023]

[Table 1] * 1: A molded article having an adhesive area of 4 mm ² was prepared by transfer molding, left at 175 ° C. for 8 hours, and the shear adhesive strength was determined. * 2: A molded article was prepared by transfer molding, post-cured at 175 ° C for 8 hours, and measured using a thermal equipment analyzer. * 3: Using a molding compound, a silicon chip (test element) having two or more aluminum wirings is bonded to a Pd pre-plating frame, transfer-molded at 175 ° C for 2 minutes, and QFP-208P , making a molded article of 2.8 mm ^t, which 175 ° C., was cured after 8 hours. The molded article thus obtained was previously subjected to a moisture absorption treatment at 85 ° C. and 40% RH for 168 hours, and then passed through an IR reflow furnace at Max 240 ° C. four times. Thereafter, PCT was performed in saturated steam at 127 ° C. and 2.5 atm, and the disconnection due to aluminum corrosion was evaluated as defective.

[0024]

As apparent from the above description and Table 1, the encapsulating resin composition and the semiconductor encapsulating apparatus of the present invention have excellent adhesiveness with Pd and Pd-Au plated inserts and have an IR reflow. Without exfoliation even after, excellent in moisture resistance, as a result, it is possible to significantly reduce the occurrence of leakage current due to disconnection or moisture due to electrode corrosion,
Moreover, reliability can be guaranteed for a long period of time.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 23/29 H01L 23/30 R 23/31

Claims (2)

[Claims] 1. An epoxy resin, (B) a novolak type phenol resin, and (C) 2-di-n-butylamino-4,6-
Dimercapto-s-triazine and (D) an inorganic filler are essential components.
Di-n-butylamino-4,6-dimercapto-s-triazine in a ratio of 0.0004 to 0.2% by weight and the inorganic filler of (D) in a ratio of 25 to 95% by weight. A resin composition for sealing. 2. An epoxy resin, (B) a novolak type phenol resin, and (C) 2-di-n-butylamino-4,6-
Dimercapto-s-triazine and (D) an inorganic filler are essential components.
A sealing resin containing di-n-butylamino-4,6-dimercapto-s-triazine at a ratio of 0.0004 to 0.2% by weight and the inorganic filler (D) at a ratio of 25 to 95% by weight. A semiconductor sealing device, wherein a semiconductor chip is sealed with a cured product of a composition.