JPH1112446A - Sealing resin composition and semiconductor device sealed therewith - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-reliability sealed semiconductor device by improving the adhesiveness of a pre-plating frame such as especially Pd or Pd-Au with a resin composition, improving the reflow resistance of the device and preventing the wet deterioration resistance after reflow. SOLUTION: There are provided a sealing resin composition essentially consisting of an epoxy resin (A), a novolac phenolic resin (B), N-oxydiethylene-2- benzothiazolesulfenamide (C) and an inorganic filler, wherein the content of C is 0.001-0.1 wt.% based on the resin composition, and the content of D is 25-95 wt.% based on the resin composition and a semiconductor device using a pre-plating frame such as Pd or Pd-Au and sealed with the resin composition.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to Pd and Pd-Au
The present invention relates to an epoxy resin composition excellent in reliability such as reflow crack resistance in a semiconductor package using a frame subjected to pre-plating and the like, and a semiconductor sealing device.

[0002]

2. Description of the Related Art In recent semiconductor devices, the number of semiconductor packages employing a frame plated with Pd or Pd-Au instead of solder plating is increasing.

[0003] Conventional semiconductor devices employing a pre-plating frame of Pd or Pd-Au sealed with a resin composition comprising an epoxy resin, a novolak-type phenol resin and an inorganic filler, are not sealed with the pre-plating frame. There was a drawback that the adhesion to the resin was extremely poor. In particular, when a semiconductor device that has absorbed moisture is surface-mounted by an infrared (IR) reflow method, peeling occurs between the sealing resin and the lead frame or between the sealing resin and the semiconductor chip, causing remarkable moisture resistance deterioration and disconnection due to corrosion of the electrode. Leakage current due to moisture or moisture, and as a result, the semiconductor device has a drawback that long-term reliability cannot be guaranteed. For this reason, there has been a strong demand for the development of a material which has little influence on moisture resistance and has good moldability with little moisture resistance deterioration even if surface mounting of the entire semiconductor device is performed by IR reflow.

[0004]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned drawbacks and to meet the above-mentioned demands.
The present invention provides a sealing resin composition and a semiconductor sealing device having high adhesiveness to a pre-plating frame such as d or Pd-Au, and particularly having excellent reflow resistance and reliability after reflow, and having good moldability. What you want to do.

[0005]

Means for Solving the Problems The present inventors have conducted intensive studies to achieve the above object, and as a result, have found that the resin composition has an N content.
-By blending oxydiethylene-2-benzothiazolesulfenamide, the adhesion with a pre-plating frame such as Pd or Pd-Au is greatly improved,
The inventors have found that the above objects have been achieved, and have completed the present invention. That is, the present invention provides (A) an epoxy resin,
(B) Novolak-type phenol resin, (C) N-oxydiethylene-2-benzothiazolesulfenamide and (D) an inorganic filler are essential components, and the N-oxy resin of (C) is used with respect to the resin composition. A sealing resin composition comprising 0.001 to 0.1% by weight of diethylene-2-benzothiazolesulfenamide and 25 to 95% by weight of the inorganic filler (D). is there. A semiconductor sealing device characterized by sealing a semiconductor chip mounted on a Pd or Pd-Au pre-plated frame with a cured product of the sealing resin composition.

Hereinafter, the present invention will be described in detail.

[0007] The epoxy resin (A) used in the present invention is not particularly limited in molecular structure, molecular weight and the like, as long as it is a compound having at least two epoxy groups in its molecule, and is generally used as a sealing material. Can be widely encompassed. For example, biphenyl type, bisphenol type aromatic type, aliphatic type such as cyclohexane derivative, and epoxy novolak type epoxy resin represented by the following general formula can be used.

[0008]

Embedded image (In the formula, R ¹ represents a hydrogen atom, a halogen atom or an alkyl group, R ² represents a hydrogen atom or an alkyl group, and n represents an integer of 1 or more.) These epoxy resins may be used alone or in combination of two or more. Mix and use.

The novolak type phenolic resin (B) used in the present invention includes a novolak type phenolic resin obtained by reacting a phenol such as phenol and alkylphenol with an aldehyde such as formaldehyde and paraformaldehyde, and modified resins thereof. For example, epoxidized or butylated novolak-type phenol resins are used, and these resins are used alone or in combination of two or more. The mixing ratio of the novolak type phenol resin is such that the equivalent ratio [(a) / (b)] of the epoxy group (a) of the epoxy resin to the phenolic hydroxyl group (b) of the novolak type phenol resin is in the range of 0.1 to 10. It is desirable to be within. If the equivalent ratio is less than 0.1 or more than 10, heat resistance, moisture resistance, molding workability, and electrical properties of the cured product are deteriorated, and any case is not preferable. Therefore, it is better to limit to the above range. (C) used in the present invention
N-oxydiethylene-2-benzothiazolesulfenamide is represented by the following structural formula.

[0010]

Embedded image

The compounding ratio of N-oxydiethylene-2-benzothiazolesulfenamide is desirably 0.001 to 0.1% by weight based on the whole resin composition. If this ratio is less than 0.001% by weight, there is no effect on improving the adhesive strength to a pre-plating frame such as Pd or Pd-Au, and if it exceeds 0.1% by weight, it adversely affects the curing of the sealing resin, etc. Unsuitable for practical use.

The inorganic filler (D) used in the present invention includes silica powder, alumina powder, antimony trioxide, talc, calcium carbonate, titanium white, clay, mica, red iron oxide, glass fiber and the like. Alternatively, two or more kinds can be used in combination. Among these, silica powder and alumina powder are particularly preferable and are often used. The inorganic filler is desirably contained in a proportion of 25 to 95% by weight based on the whole resin composition. If the proportion is less than 25% by weight, heat resistance, moisture resistance,
Solder heat resistance, mechanical properties, and moldability deteriorate, and if it exceeds 95% by weight, burrs increase, resulting in poor moldability and not suitable for practical use.

The encapsulating resin composition of the present invention comprises an epoxy resin, a novolak type phenol resin, N-oxydiethylene-2-benzothiazolesulfenamide and an inorganic filler as essential components. To the extent not to the contrary, and if necessary, for example, natural waxes, synthetic waxes, metal salts of linear fatty acids, acid amides, esters, release agents such as paraffins, chlorinated paraffins, brominated toluene, Flame retardants such as hexabromobenzene and antimony trioxide, coloring agents such as carbon black and red iron, various curing accelerators and the like can be appropriately added and blended.

As a general method for preparing the encapsulating resin composition of the present invention as a molding material, epoxy resin, novolak type phenol resin, N-oxydiethylene-2-benzothiazolesulfenamide, inorganic filler, After mixing the ingredients and other components and mixing them sufficiently uniformly with a mixer, etc., they are further subjected to a melt-mixing process using a hot roll or a mixing process using a kneader, etc., and then cooled and solidified, pulverized to an appropriate size, and formed into a molding material. It can be. If the molding material thus obtained is applied to sealing, coating, insulating, etc. of electronic parts or electric parts such as semiconductor devices, excellent properties and reliability can be imparted.

The semiconductor sealing device of the present invention can be easily manufactured by sealing a semiconductor chip using the sealing resin obtained as described above. The most common sealing method is a low-pressure transfer molding method, but sealing by injection molding, compression molding, casting or the like is also possible. The sealing resin composition is heated and cured at the time of sealing, and finally a semiconductor sealing device sealed with a cured product of this composition is obtained. 150 ° C for curing by heating
It is desirable to cure by heating as described above. The semiconductor device for sealing is not particularly limited, for example, with an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and the like.

[0016]

According to the sealing resin composition and the semiconductor sealing device of the present invention, desired characteristics can be obtained by using N-oxydiethylene-2-benzothiazolesulfenamide as a resin component. . That is, Pd or Pd
-The adhesive strength with the pre-plating frame of Au or the like was improved, the deterioration of the adhesiveness between the insert after the surface mounting and the sealing resin could be prevented, and long-term reliability could be guaranteed.

[0017]

Next, the present invention will be described with reference to examples, but the present invention is not limited to these examples. In the following Examples and Comparative Examples, “%” means “% by weight”.

Example 1 Cresol novolak epoxy resin (epoxy equivalent 195)
) 12.5%, novolak type phenol resin (phenol equivalent: 104) 6.7%, N-oxydiethylene-2-benzothiazole sulfenamide 0.01% shown in the following chemical formula 3,

[0019]

Embedded image 80% fused silica powder, 0.2% ester wax, 0.19% curing accelerator and 0.4% silane coupling agent are mixed at room temperature, kneaded at 90-95 ° C, and cooled and pulverized to produce molding material. did. This molding material was transfer-injected into a mold heated to 170 ° C. and cured to produce a molded product (sealed product). The molded article was tested for characteristics such as moisture resistance, and the results are shown in Table 1. In particular, a remarkable effect of the present invention was recognized on moisture resistance.

Example 2 Biphenyl type epoxy resin (epoxy equivalent: 213) 5.0%
And phenol aralkyl resin (phenol equivalent 175)
4.15%, 0.01% of the above-mentioned N-oxydiethylene-2-benzothiazolesulfenamide of Chemical Formula 3, silica powder 90
%, Ester waxes 0.2%, curing catalyst 0.14% and silane coupling agent 0.5% were mixed, kneaded and pulverized in the same manner as in Example 1 to produce a molding material. In addition, a molded product was prepared in the same manner as in Example 1, and a characteristic test such as moisture resistance was performed. The results are shown in Table 1. In particular, a remarkable effect of the present invention was recognized on moisture resistance.

Example 3 Biphenyl type epoxy resin (epoxy equivalent: 213) 5.0%
And phenol aralkyl resin (phenol equivalent 175)
4.15%, 0.05% of the above-mentioned N-oxydiethylene-2-benzothiazolesulfenamide of Chemical formula 3, curing catalyst 0.14%
%, Silane coupling agent 0.5%, silica powder 90% and ester wax 0.2% as in Example 1.
The mixture was kneaded and pulverized to produce a molding material. In addition, a molded product was prepared in the same manner as in Example 1, and a characteristic test such as moisture resistance was performed. The results are shown in Table 1. In particular, a remarkable effect of the present invention was recognized on moisture resistance.

Comparative Example Cresol novolak type epoxy resin (epoxy equivalent 19
5) 12.5%, novolak type phenol resin (phenol equivalent: 104) 6.7%, silica powder 80%, curing accelerator 0.19
%, Ester waxes 0.2% and silane coupling agent 0.4% were mixed to produce a molding material in the same manner as in Example 1. A molded article was formed using this molding material, and various properties of the molded article were tested in the same manner as in Example 1.
The results are shown in Table 1.

[0023]

[Table 1] * 1: A molded article having an adhesive area of 4 mm ² was prepared by transfer molding, and this was post-cured at 175 ° C. for 8 hours, and the shear adhesive strength was determined. * 2: A molded product was prepared by transfer molding, post-cured at 175 ° C for 8 hours, made into a test piece of appropriate size, and measured using a thermal equipment analyzer. * 3: Using a molding material, a silicon chip (test element) having two or more aluminum wirings is adhered to a Pd pre-plating frame, transfer molded at 175 ° C for 2 minutes, and QFP-208P, 2.8 make moldings mm ^t, which 175 ° C., was cured after 8 hours. The molded article thus obtained was previously subjected to 85 ° C., 40% RH, 168
After the moisture absorption treatment for a period of time, the mixture was passed four times through an IR reflow furnace at Max 240 ° C. Thereafter, PCT was performed in saturated steam at 127 ° C. and 2.5 atm, and a disconnection due to aluminum corrosion was evaluated as defective.

[0024]

As apparent from the above description and Table 1, the encapsulating resin composition and the semiconductor encapsulating apparatus of the present invention have excellent adhesiveness with Pd and Pd-Au plated inserts and have an IR reflow. Without exfoliation even after, excellent in moisture resistance, as a result, it is possible to significantly reduce the occurrence of leakage current due to disconnection or moisture due to electrode corrosion,
Moreover, reliability can be guaranteed for a long period of time.

Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 23/31

Claims (2)

[Claims] 1. A resin composition comprising (A) an epoxy resin, (B) a novolak-type phenol resin, (C) N-oxydiethylene-2-benzothiazolesulfenamide and (D) an inorganic filler as essential components. On the other hand, (C)
Characterized in that it contains 0.001 to 0.1% by weight of N-oxydiethylene-2-benzothiazolesulfenamide and 25 to 95% by weight of the inorganic filler of (D). Resin composition. 2. A resin composition comprising (A) an epoxy resin, (B) a novolak-type phenol resin, (C) N-oxydiethylene-2-benzothiazolesulfenamide and (D) an inorganic filler as essential components. On the other hand, (C)
Cured resin composition containing 0.001 to 0.1% by weight of N-oxydiethylene-2-benzothiazolesulfenamide and 25 to 95% by weight of the inorganic filler of (D). A semiconductor chip mounted on a frame on which Pd or Pd-Au is pre-plated.