JP2002241583A - Epoxy resin composition and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an epoxy resin composition for sealing a semiconductor having excellent hot strength, adhesion to various members such as a semiconductor element or a lead frame, solder resistance during packaging a substrate, especially excellent solder resistance when the solder treating temperature is higher than the conventional temperature and excellent adhesiveness to a preplating frame such as Ni, Ni-Pd or Ni-Pd-Au. SOLUTION: This epoxy resin composition for sealing the semiconductor is characterized by comprising (A) an epoxy resin, (B) a phenolic resin, (C) a silane compound having an amide bond and a carboxy group and/or a hydrolyzate of the silane compound, (D) an inorganic filler and (E) a curing accelerator as essential components.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation having excellent solder resistance and a semiconductor device using the same.

[0002]

2. Description of the Related Art Transfer molding of an epoxy resin composition is suitable as a method for encapsulating semiconductor elements such as ICs and LSIs at a low cost and suitable for mass production. The phenol resin has been improved to improve the characteristics. However, in the recent market trend of miniaturization, weight reduction and high performance of electronic devices, the integration of semiconductor elements has been increasing year by year, and the surface mounting of semiconductor devices has been promoted. Demands for epoxy resin compositions have become increasingly stringent. For this reason, a problem that cannot be solved by the conventional epoxy resin composition has appeared. The biggest problem is that the semiconductor device is exposed to a high temperature of 200 ° C or more in the solder immersion or reflow process due to the adoption of surface mounting, and the moisture absorbed by the device explosively evaporates. Cracks, semiconductor elements,
This is a phenomenon in which peeling occurs at the interface between each of the plated joints on the lead frame and the inner lead and the cured product of the epoxy resin composition, and the reliability is significantly reduced.

[0003] In order to improve the reliability reduction due to soldering, the amount of the inorganic filler in the epoxy resin composition is increased to achieve low moisture absorption, high strength, and low thermal expansion, thereby improving solder resistance. A method of improving the flowability and maintaining a low viscosity and high fluidity at the time of molding by using a resin component having a low melt viscosity is becoming common. On the other hand, the adhesiveness of the interface between the cured product of the epoxy resin composition and the base material such as a semiconductor element or a lead frame existing inside the semiconductor device has become very important in reliability during the soldering process. If the adhesive force at the interface is weak, peeling occurs at the interface with the substrate after the soldering, and further, cracks occur in the semiconductor device due to the peeling.

Conventionally, for the purpose of improving solder resistance, γ
-Coupling agents such as glycidoxypropyltrimethoxysilane and γ-aminopropyltriethoxysilane have been added to epoxy resin compositions. However, in recent years, an increase in reflow temperature during mounting, Ni, Ni-Pd, Ni
With the emergence of a pre-plating frame such as -Pd-Au, etc., these coupling agents cannot sufficiently cope with increasingly severe requirements for solder resistance.

[0005]

SUMMARY OF THE INVENTION The present invention relates to an epoxy resin composition for semiconductor encapsulation which is excellent in solder resistance so that cracks and peeling from a substrate do not occur in a cured semiconductor device at the time of soldering after moisture absorption. And a semiconductor device using the same.

[0006]

Means for Solving the Problems The present invention provides [1] (A)
Epoxy resin, (B) a phenolic resin, (C) a silane compound having an amide bond and a carboxy group and / or a hydrolyzate of the silane compound, (D) an inorganic filler, and (E) a curing accelerator as essential components. [2] The epoxy resin composition for semiconductor encapsulation according to [1], wherein the silane compound having an amide bond and a carboxy group is a compound represented by the general formula (1). Epoxy resin composition,

Embedded image (In the formula, R1 is an alkoxy group having 1 to 3 carbon atoms, R2 is an alkyl group having 1 to 3 carbon atoms or an alkoxy group having 1 to 3 carbon atoms. Is an integer of 1 to 5.)

[3] The epoxy resin according to [1], wherein the epoxy resin is at least one selected from a biphenyl type epoxy resin, a bisphenol type epoxy resin, and a stilbene type epoxy resin.
Or the epoxy resin composition for semiconductor encapsulation according to [2],
[4] The epoxy resin composition for semiconductor encapsulation according to [1] or [2], wherein the epoxy resin is at least one member selected from the general formula (2):

Embedded image (Wherein R3 and R4 are alkyl groups having 1 to 6 carbon atoms, which may be the same or different; n is an integer of 0 to 3, m is an integer of 0 to 4; p is an average of 1) A positive number between 10 and 10.)

[5] The phenolic resin is at least one selected from general formulas (3), [1], [2], [3],
Or the epoxy resin composition for semiconductor encapsulation according to [4],

Embedded image (In the formula, R5 and R6 are alkyl groups having 1 to 6 carbon atoms, which may be the same or different. N is an integer of 0 to 3, m is an integer of 0 to 4, and p is 1 on average.) A positive number between 10 and 10.)

[6] A silane compound having an amide bond and a carboxy group and / or a hydrolyzate of the silane compound is preliminarily heated and mixed with all or a part of an epoxy resin and / or a phenol resin. , [2],
[3] The epoxy resin composition for semiconductor encapsulation according to [4] or [5], [7] a silane compound in which the inorganic filler has an amide bond and a carboxy group, and / or hydrolysis of the silane compound. [1], [2], [3], [4], [5], or [6], which have been surface-treated in advance.
A semiconductor element is encapsulated using the epoxy resin composition for semiconductor encapsulation according to any one of [8] to [7]. A semiconductor device.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION The epoxy resin used in the present invention refers to all monomers, oligomers and polymers having an epoxy group, for example, ortho-cresol novolak type epoxy resin, phenol novolak type epoxy resin,
Biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, stilbene type epoxy resin, hydroquinone type epoxy resin, triphenol methane type epoxy resin, phenol aralkyl type epoxy resin (having phenylene skeleton, biphenylene skeleton, etc.), Examples include, but are not limited to, naphthol type epoxy resins, alkyl-modified triphenol methane type epoxy resins, triazine nucleus containing epoxy resins, dicyclopentadiene-modified phenol type epoxy resins. These may be used alone or in combination of two or more. In order to improve the moisture resistance reliability, it is desirable that the amount of chlorine ions, sodium ions and other free ions contained in the epoxy resin used in the present invention is as small as possible. Among these, a crystalline epoxy resin capable of increasing the filling amount of the inorganic filler or a phenol aralkyl type epoxy resin having a biphenylene skeleton is preferable.

Among the crystalline epoxy resins, a melting point of 150
C. or lower is preferred. If the temperature exceeds 150 ° C., it cannot be uniformly dispersed because it does not melt sufficiently during melt-kneading, and a molded article of the epoxy resin composition using this molten mixture becomes non-uniform, and the strength of the epoxy resin composition is different depending on each part. May decrease. Examples of the crystalline epoxy resin satisfying these conditions include a biphenyl type epoxy resin, a bisphenol type epoxy resin, and a stilbene type epoxy resin.

Examples of the biphenyl type epoxy resin include those represented by the general formula (4).

Embedded image (Wherein, R 7 is an alkyl group having 1 to 6 carbon atoms, which may be the same or different; m is an integer of 0 to 4) Specific examples include 4,4′-dihydroxybiphenyl,
4,4'-dihydroxy-3,3 ', 5,5'-tetramethylbiphenyl, 4,4'-dihydroxy-3,3'
-Ditertiarybutyl-6,6'-dimethylbiphenyl, 2,2'-dihydroxy-3,3'-ditertiarybutyl-6,6'-dimethylbiphenyl, 4,4'-dihydroxy-3,3'-diter Shaributyl-5,5 '
-Dimethylbiphenyl, or 4,4'-dihydroxy-
Glycidyl ether compounds such as 3,3 ′, 5,5′-tetratert-butylbiphenyl (including isomers having different substitution positions) are exemplified.

As the bisphenol type epoxy resin,
For example, those represented by the general formula (5) can be mentioned.

Embedded image Specific examples include bis (4-hydroxyphenyl) methane, bis (3-methyl-4-hydroxyphenyl) methane, bis (3,5-dimethyl-4-hydroxyphenyl) methane, bis (2,3,5- Trimethyl-4-hydroxyphenyl) methane, 1,1-bis (3 ′, 5′-
Dimethyl-4'-hydroxyphenyl) ethane, 2,2
-Bis (4'-hydroxyphenyl) propane, 2,2
-Bis (3'-methyl-4'-hydroxyphenyl) propane, 2,2-bis (3 ', 5'-dimethyl-4'-
Hydroxyphenyl) propane, 2,2-bis (3′-
Tert-butyl-4′-hydroxyphenyl) propane or bis (2-tert-butyl-5-methyl-4)
Glycidyl ether compounds such as (-hydroxyphenyl) sulfide.

Examples of the stilbene type epoxy resin include those represented by the general formula (6).

Embedded image (Wherein, R10 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, which may be the same or different.
11 is an alkyl group having 1 to 6 carbon atoms, which may be the same or different. m is an integer of 0 to 4) As specific examples, 3-tert-butyl-4,4′-dihydroxy-5,3′-dimethylstilbene, 3-tert-butyl-4,4′-dihydroxy-3 ′, 6-dimethylstilbene, 3-tert-butyl-2,4'-
Dihydroxy-3 ′, 5 ′, 6-trimethylstilbene, 3-tert-butyl-4,4′-dihydroxy-
3 ′, 5 ′, 6-trimethylstilbene, 3-tert-butyl-4,4′-dihydroxy-3 ′, 5,5′-
Trimethylstilbene, 4,4'-dihydroxy-3,
3'-dimethylstilbene, 4,4'-dihydroxy-
3,3 ′, 5,5′-tetramethylstilbene, 4,
4'-dihydroxy-3,3'-ditertiarybutylstilbene, 4,4'-dihydroxy-3,3'-ditertiarybutyl-6,6'-dimethylstilbene, 2,
2'-dihydroxy-3,3'-ditert-butyl-
6,6′-dimethylstilbene, 2,4′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylstilbene, 2,2′-dihydroxy-3,3 ′,
5,5'-tetramethylstilbene, 4,4'-dihydroxy-3,3'-ditert-butyl-5,5'-dimethylstilbene, or 4,4'-dihydroxy-3,
Glycidyl ether compounds such as 3 ′, 5,5′-tetratert-butylstilbene (including isomers having different substitution positions) are exemplified.

Among them, 4,4'-dihydroxybiphenyl and 4,4'-dihydroxy-3,3 ', 5,5'-tetramethyl are preferred in view of availability, performance, raw material price and the like. Biphenyl, bis (3,5-dimethyl-4-
Hydroxyphenyl) methane, bis (2,3,5-trimethyl-4-hydroxyphenyl) methane, 2,2-bis (3′-methyl-4′-hydroxyphenyl) propane, 2,2-bis (3 ′, 5'-dimethyl-4'-hydroxyphenyl) propane, glycidyl etherified bis (2-tert-butyl-5-methyl-4-hydroxyphenyl) sulfide (the above seven epoxy resins are hereinafter referred to as group a); 3-tert-butyl-2,
4'-dihydroxy-3 ', 5', 6-trimethylstilbene, 3-tert-butyl-4,4'-dihydroxy-3 ', 5', 6-trimethylstilbene, 3-tert-butyl-4,4 ' -Dihydroxy-3 ', 5
Glycidyl etherified product of 5′-trimethylstilbene (the above three types of epoxy resins are hereinafter referred to as group b), 4,
4′-dihydroxy-3,3 ′, 5,5′-tetramethylstilbene, 4,4′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylstilbene,
2,2′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylstilbene, 2,4′-dihydroxy-3,3′-di-tert-butyl-6,6′-dimethylstilbene, 2, 2'-dihydroxy-3,
3 ', 5,5'-tetramethylstilbene, or 4,
4'-dihydroxy-3,3'-ditert-butyl-
One or more selected from glycidyl etherified products of 5,5′-dimethylstilbene (the above six types of epoxy resins are hereinafter referred to as group c) are preferred.

Among the group a, the biphenyl type epoxy resin has a high viscosity reducing effect and a high reactivity of 4,4 '.
Those containing a skeleton of -dihydroxybiphenyl are particularly preferred. In other group a, bis (3,5-dimethyl-4-hydroxyphenyl) methane, 2,2-bis (3 ′, 5′-dimethyl-4′-hydroxyphenyl)
Propane, bis (2-tert-butyl-5-methyl-
Glycidyl etherified products of 4-hydroxyphenyl) sulfide are particularly preferred. In the stilbene type epoxy resin, a mixture of at least one selected from the group b and at least one selected from the group c is preferable because the melting point is low. The mixing ratio, mixing method, and the like are not particularly limited. For example, there is a method of mixing stilbene-type phenols, which are raw materials of the stilbene-type epoxy resin, before glycidyl etherification, or a method of melt-mixing both stilbene-type epoxy resins.

Among the phenol aralkyl type epoxy resins having a biphenylene skeleton, those represented by the general formula (2) are preferred. The epoxy resin of the general formula (2) is
An epoxy resin having two or more epoxy groups in a molecule, and having a biphenylene skeleton between epoxy groups. The cured product of the epoxy resin composition using the epoxy resin of the general formula (2) and the phenolic resin has a low crosslinking density, is highly flexible, and has a high hydrophobic structure, and thus has a low moisture absorption rate. Since the thermal stress during molding of the epoxy resin composition or the stress generated during the soldering process after absorbing moisture of the semiconductor device as a molded product is reduced, the solder resistance is improved. On the other hand, since the hydrophobic structure between the epoxy groups is a rigid biphenylene skeleton, it has the characteristic that the heat resistance is less reduced even though the crosslink density is low. Specific examples of the epoxy resin represented by the general formula (2) are shown below, but are not limited thereto.

Embedded image

The phenolic resin used in the present invention refers to all monomers, oligomers and polymers having a phenolic hydroxyl group, such as phenol novolak resin, cresol novolak resin, and phenol aralkyl resin (having a phenylene skeleton, biphenylene skeleton, etc.). And a naphthol aralkyl resin (having a phenylene skeleton, a biphenylene skeleton and the like), a triphenolmethane resin, a terpene-modified phenol resin, a dicyclopentadiene-modified phenol resin, and the like, but are not limited thereto. These may be used alone or in combination of two or more. To improve humidity resistance reliability,
It is desirable that chlorine ions, sodium ions, and other free ions contained in the phenol resin are as small as possible.

Of these, phenol resins represented by the general formula (3) are preferred. The phenolic resin of the general formula (3) is a phenolic resin having two or more phenolic hydroxyl groups in one molecule, and has a biphenylene skeleton between the phenolic hydroxyl groups. The cured product of the epoxy resin composition using the epoxy resin and the phenolic resin of the general formula (3) has a low crosslink density, is high in flexibility, and has a low hydrophobicity because it contains many hydrophobic structures. Since the thermal stress during molding of the epoxy resin composition or the stress generated during the soldering process after absorbing moisture of the semiconductor device as a molded product is reduced, the solder resistance is improved. On the other hand, since the hydrophobic structure between the phenolic hydroxyl groups is a rigid biphenylene skeleton, the crosslink density is low, but the heat resistance is not significantly reduced. Specific examples of the phenolic resin represented by the general formula (3) are shown below, but are not limited thereto.

Embedded image The equivalent ratio of the epoxy group of all epoxy resins to the phenolic hydroxyl group of all phenol resins is preferably 0.5
-2.0, particularly preferably 0.7-1.5. 0.
If the ratio is out of the range of 5 to 2.0, the curability, the moisture resistance reliability, and the like may be reduced.

The silane compound having an amide bond and a carboxy group of the present invention and / or one or more selected from the group consisting of hydrolysates of the silane compound are used as a silane coupling agent. In general, a silane coupling agent is a compound characterized by having a silanol group and an organic functional site in the same molecule, but the silane compound having an amide bond and a carboxy group in the same molecule according to the present invention is:
It has an amide bond and a carboxy group as organic functional sites. The amide bond site, carboxy group, silanol group reacts or interacts with various inorganic members such as metal and silicon present inside the semiconductor device,
In particular, since the carboxy group reacts with the epoxy resin, the solder crack resistance is improved by improving the adhesion between various members of the semiconductor device and the epoxy resin composition.
It has been known that the use of a compound having an amino group improves solder crack resistance. However, since the amino group has high reactivity, there is a disadvantage that the storage stability of the epoxy resin composition is reduced. However, the silane coupling agent of the present invention is characterized in that the reactivity with various members of the semiconductor device is equal to that of the compound having an amino group, but the storage stability of the epoxy resin composition is not impaired. The silane compound having an amide bond and a carboxy group is not particularly limited, but from the viewpoint of hydrolyzability of the silanol group and storage stability, at least one selected from the compounds represented by the general formula (1) is preferable. preferable.

In the hydrolyzate of the silane compound having an amide bond and a carboxy group according to the present invention, since the alkoxy group is hydrolyzed in advance, the hydroxyl group on the surface of the inorganic filler and various members of the semiconductor device can be easily bonded to the hydroxyl group. Alternatively, a covalent bond can be formed to improve solder resistance. The method of hydrolysis is not particularly limited,
For example, there is a method in which a silane compound having an amide bond and a carboxy group is mixed with pure water and sufficiently stirred and mixed until the mixture does not separate into two layers.

The silane coupling agent of the present invention can be used in combination with another silane coupling agent. The silane coupling agent that can be used in combination refers to all silane compounds having an organic functional group such as an alkoxysilyl group and an epoxy group in one molecule, for example, γ-aminopropyltriethoxysilane, N-β (aminoethyl) Silane having an amino group such as -γ-aminopropyltrimethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, β- (3 Silanes having an epoxy group such as 2,4-epoxycyclohexyl) ethyltrimethoxysilane; silanes having a mercapto group such as γ-mercaptopropyltrimethoxysilane; silanes having a vinyl group such as vinyltrimethoxysilane;
Examples thereof include, but are not limited to, silanes having a methacryl group such as (methacryloxypropyl) trimethoxysilane. These may be used alone or in combination of two or more. The blending amount of the silane coupling agent of the present invention is preferably 0.05 to 2% by weight, and particularly preferably 0.1 to 0.4% by weight, based on the entire epoxy resin composition.

Usually, the coupling agent is mixed into the epoxy resin composition by integral blending. However, the silane coupling agent of the present invention can be mixed with all or part of the epoxy resin or phenol resin by heating. good. The silane coupling agent of the present invention is also effective in improving the affinity at the interface between various members present inside the semiconductor device and the cured product of the epoxy resin composition, and improving the adhesion at the interface due to the formation of chemical bonds. There is. In this case, it is necessary that the compounded silane coupling agent easily and efficiently transfers to the interface with various members of the semiconductor device at the time of molding the epoxy resin composition. An effective method for this is a method in which the silane coupling agent of the present invention is previously mixed with the resin component by heating.

Further, the silane coupling agent of the present invention, when present on the surface of the inorganic filler, chemically bonds the inorganic filler and the organic component in the epoxy resin composition to improve the adhesiveness at the interface. Considered valid. In order to improve the adhesion at the interface between the inorganic filler and the organic component as described above, the silane coupling agent of the present invention must be present on the surface of the inorganic filler, and more preferably be adsorbed or immobilized. Necessary, for this reason, if the surface of the inorganic filler is treated with the silane coupling agent of the present invention, the adhesiveness at the interface is improved, which is effective in improving the strength at heat and the solder resistance. As a method of treating the silane coupling agent of the present invention on the surface of the inorganic filler, for example, spraying a solution of the silane coupling agent, or an alcohol thereof on the stirred inorganic filler, and further stirring A method of obtaining a surface-treated inorganic filler by leaving it at room temperature or heating it. In addition to the use of the surface-treated inorganic filler, a method of previously heating and mixing the silane coupling agent of the present invention with an integral blend or a resin component may be used in combination.

The kind of the inorganic filler used in the present invention is not particularly limited, and those generally used for a sealing material can be used. For example, fused crushed silica, fused spherical silica, crystalline silica, secondary aggregated silica, alumina, titanium white, aluminum hydroxide, talc, clay, glass fiber, etc. are preferred, and fused spherical silica is particularly preferred. The shape is preferably infinitely spherical, and the filling amount can be increased by mixing particles having different particle sizes. The compounding amount of the inorganic filler is preferably 65 to 94% by weight, more preferably 75 to 91% by weight, based on the entire epoxy resin composition. If the content is less than 65% by weight, the reinforcing effect of the inorganic filler is not sufficiently exhibited, and the amount of the resin component which is a factor of moisture absorption increases, so that the moisture absorption of the cured product of the epoxy resin composition increases. Therefore, cracks may easily occur in the semiconductor device during the soldering process. If the content exceeds 94% by weight, the fluidity of the epoxy resin composition is reduced, and poor filling, chip shift, pad shift, and wire sweep may easily occur during molding.

The curing accelerator used in the present invention includes:
Any compound that promotes a crosslinking reaction between the epoxy resin and the phenol resin may be used. For example, amine compounds such as 1,8-diazabicyclo (5,4,0) undecene-7;
Organophosphorus compounds such as triphenylphosphine, tetraphenylphosphonium and tetraphenylborate salts,
Examples include imidazole compounds such as 2-methylimidazole, but are not limited thereto. These may be used alone or in combination of two or more.

The epoxy resin composition of the present invention comprises (A)
In addition to the component (E), if necessary, brominated epoxy resins, antimony oxide, flame retardants such as phosphorus compounds, inorganic ion exchangers such as bismuth oxide hydrate, coloring agents such as carbon black and red iron oxide, silicone oil, Various additives such as a low-stress agent such as silicone rubber, a release agent such as natural wax, synthetic wax, higher fatty acid and its metal salts or paraffin, and an antioxidant can be blended. The epoxy resin composition of the present invention is obtained by mixing components (A) to (E) and other additives using a mixer,
It is obtained by melt-kneading with a kneader such as a heating kneader or an extruder, cooling and pulverizing. In order to manufacture a semiconductor device by encapsulating an electronic component such as a semiconductor element using the epoxy resin composition of the present invention, it is sufficient to cure and mold by a molding method such as a transfer mold, a compression mold, and an injection mold. In particular, the epoxy resin composition of the present invention may be used when the soldering temperature is higher than before, or when Ni, Ni
It is suitable for a semiconductor device using a pre-plating frame such as -Pd or Ni-Pd-Au.

Hereinafter, the present invention will be described specifically with reference to Examples, but the present invention is not limited thereto. The mixing ratio is by weight. Example 1 6.2 parts by weight of a resin mainly composed of a biphenyl type epoxy resin of the formula (7) (epoxy equivalent: 190, melting point: 105 ° C.)

Embedded image

5.7 parts by weight of a phenol aralkyl resin of the formula (8) (hydroxyl equivalent: 174, softening point: 75 ° C.)

Embedded image

0.4 parts by weight of the silane coupling agent of the formula (9) (hereinafter referred to as silane coupling agent A)

Embedded image 87.0 parts by weight of fused spherical silica 1,8-diazabicyclo (5,4,0) undecene-7 (hereinafter referred to as DBU) 0.2 part by weight Carbon black 0.2 part by weight Carnauba wax 0.3 part by weight After mixing at room temperature using a
The mixture was kneaded using two rolls at a temperature of 45 ° C. and 45 ° C., cooled and pulverized to obtain an epoxy resin composition. The obtained epoxy resin composition was evaluated by the following method. Table 1 shows the results.

Evaluation method Spiral flow: Using a mold for measuring spiral flow according to EMMI-1-66, a mold temperature of 175 ° C.
The measurement was performed at an injection pressure of 6.9 MPa and a curing time of 120 seconds.
The unit is cm. Heat strength: Flexural strength at 240 ° C. is determined according to JIS K 691.
It measured according to 1. The unit is N / mm ² . Solder resistance: Using a transfer molding machine, mold temperature 1
75 ° C., injection pressure 7.4 MPa, curing time 120 seconds, 1
00 pin TQFP (Package size is 14 × 14m
m, thickness 1.4mm, silicon chip size is 8.0x
8.0 mm, and the lead frame was made of Ni-Pd-Au), and post-cured at 175 ° C. for 8 hours. The obtained package was left for 72 hours or 168 hours in an environment of 85 ° C. and 85% relative humidity, and then placed in a 240 ° C. solder bath.
Soaked for seconds. External cracks were observed with a microscope, and the crack occurrence rate [(number of crack occurrence packages) / (total number of packages) × 100] was expressed in%. Further, the ratio of the peeled area between the chip and the cured product of the epoxy resin composition was measured using an ultrasonic flaw detector, and the peeling rate was determined as [(peeled area) / (chip area) × 100]. The average was determined and expressed in%.

(Examples 2 to 12, Comparative Examples 1 to 3)
According to the formulation in Table 2, an epoxy resin composition was obtained in the same manner as in Example 1, and evaluated in the same manner as in Example 1. The results are shown in Tables 1 and 2. The details of the epoxy resin, phenol resin, hydrolyzate, heated mixture, and surface-treated inorganic filler other than those used in Example 1 are shown below. An orthocresol novolak type epoxy resin (epoxy equivalent 196, softening point 55 ° C.); a resin containing a stilbene type epoxy resin of the formula (10) as a main component (epoxy equivalent 187, melting point 110 ° C.);

Embedded image

A phenol aralkyl type epoxy resin of the formula (11) (epoxy equivalent 272, softening point 58 ° C.),

Embedded image

A phenol aralkyl resin of the formula (12) (hydroxyl equivalent: 200, softening point: 65 ° C.),

Embedded image Phenol novolak resin (hydroxyl equivalent 105, softening point 105 ° C),

A silane coupling agent of the formula (13) (hereinafter referred to as silane coupling agent B)

Embedded image

[Production Example of Hydrolyzate] A silane coupling agent A and pure water are mixed at a weight ratio of 80:20, and the mixture is sufficiently stirred and mixed until the mixture is no longer separated into two layers. Was.

[Production Example of Heated Mixture] (Molten Mixture A) 6.2 parts by weight of a resin mainly composed of a biphenyl type epoxy resin of the formula (7) and 5.7 parts by weight of a phenol aralkyl resin of the formula (8) After being completely melt-mixed at 110 ° C., 0.4 part by weight of a silane coupling agent A was added to obtain a melt mixture A. (Molten mixture B) After completely melting 5.7 parts by weight of the phenol aralkyl resin of the formula (8) at 110 ° C, 0.2 part by weight of a silane coupling agent B was added to obtain a molten mixture B.

[Production Example of Inorganic Filler with Surface Treatment] (Silica A) 0.4 parts by weight of a silane coupling agent A was added dropwise while stirring 87 parts by weight of fused spherical silica with a mixer. After continuing stirring as it is for 15 minutes, it was left at room temperature for 8 hours to obtain treated silica A. (Treatment Silica B) While stirring 87 parts by weight of fused spherical silica with a mixer, 0.2 parts by weight of a silane coupling agent B was added dropwise. After continuing stirring as it is for 15 minutes, it was heated at 70 ° C. for 2 hours to obtain treated silica B.

[Table 1]

[0039]

[Table 2]

[0040]

According to the present invention, the heat resistance is excellent, the adhesiveness to various members such as semiconductor elements and lead frames, the soldering resistance at the time of board mounting, especially the soldering resistance when the soldering temperature is higher than before. Ni, Ni-Pd, Ni-Pd-
An epoxy resin composition for semiconductor encapsulation having excellent adhesion to a pre-plating frame such as Au, and a semiconductor device using the same are obtained.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat ゛ (Reference) C08K 5/5455 C08K 5/5455 9/06 9/06 H01L 23/29 H01L 23/30 R 23 / 31F Term (Reference) 4F070 AA46 AC11 AC23 AC53 AC86 AD06 AE01 AE08 AE22 FA13 FA17 FB08 4J002 CC04X CC05X CC06X CC07X CD04W CD05W CD06W CD07W CD11W CD13W CE00X DE137 DE147 DJ017 DJ037 DJ047 DL007 EU118 FD 018 FD 018 018 018 018 FD206 GJ02 GQ01 4J036 AA01 AD01 AD07 AD10 AE05 DA02 FA01 FA13 FB06 FB07 JA07 4M109 AA01 EA02 EB03 EB04 EB06 EB07 EB08 EB09 EB12

Claims (8)

[Claims] (A) an epoxy resin, (B) a phenolic resin, (C) a silane compound having an amide bond and a carboxy group and / or a hydrolyzate of the silane compound, (D)
An epoxy resin composition for semiconductor encapsulation, comprising an inorganic filler and (E) a curing accelerator as essential components. 2. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the silane compound having an amide bond and a carboxy group is a compound represented by the general formula (1). Embedded image (In the formula, R1 is an alkoxy group having 1 to 3 carbon atoms, R2 is an alkyl group having 1 to 3 carbon atoms or an alkoxy group having 1 to 3 carbon atoms. Is an integer of 1 to 5.) 3. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the epoxy resin is at least one selected from a biphenyl type epoxy resin, a bisphenol type epoxy resin and a stilbene type epoxy resin. 4. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the epoxy resin is at least one selected from the general formula (2). Embedded image (Wherein R3 and R4 are alkyl groups having 1 to 6 carbon atoms, which may be the same or different; n is an integer of 0 to 3, m is an integer of 0 to 4; p is an average of 1) A positive number between 10 and 10.) 5. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the phenol resin is at least one member selected from the general formula (3). Embedded image (In the formula, R5 and R6 are alkyl groups having 1 to 6 carbon atoms, which may be the same or different. N is an integer of 0 to 3, m is an integer of 0 to 4, and p is 1 on average.) A positive number between 10 and 10.) 6. A silane compound having an amide bond and a carboxy group and / or a hydrolyzate of the silane compound is heated and mixed in advance with all or a part of an epoxy resin and / or a phenol resin. 3, 4, or 5
The epoxy resin composition for semiconductor encapsulation according to the above. 7. The method according to claim 1, wherein the inorganic filler is surface-treated in advance with a silane compound having an amide bond and a carboxy group and / or a hydrolyzate of the silane compound.
7. The epoxy resin composition for semiconductor encapsulation according to 2, 3, 4, 5, or 6. 8. A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin composition for semiconductor encapsulation according to claim 1.