JP2938174B2 - Resin composition - Google Patents

Resin composition

Info

Publication number
JP2938174B2
JP2938174B2 JP27543090A JP27543090A JP2938174B2 JP 2938174 B2 JP2938174 B2 JP 2938174B2 JP 27543090 A JP27543090 A JP 27543090A JP 27543090 A JP27543090 A JP 27543090A JP 2938174 B2 JP2938174 B2 JP 2938174B2
Authority
JP
Japan
Prior art keywords
epoxy resin
resin composition
curing agent
phenol novolak
imide ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP27543090A
Other languages
Japanese (ja)
Other versions
JPH04153213A (en
Inventor
賢 太田
幸雄 佐伯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Sumitomo Durez Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Sumitomo Durez Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd, Sumitomo Durez Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP27543090A priority Critical patent/JP2938174B2/en
Publication of JPH04153213A publication Critical patent/JPH04153213A/en
Application granted granted Critical
Publication of JP2938174B2 publication Critical patent/JP2938174B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、高集積度IC封止用樹脂組成物に適する半田
耐熱性に優れたエポキシ樹脂組成物に関するものであ
る。
Description: TECHNICAL FIELD The present invention relates to an epoxy resin composition excellent in solder heat resistance suitable for a highly integrated resin composition for IC encapsulation.

〔従来の技術〕[Conventional technology]

従来、ダイオード、トランジスタ、集積回路等の電子
部品を熱硬化性樹脂で封止しているが、特に集積回路で
は耐熱性、耐湿性に優れた0−クレゾールノボラックエ
ポキシ樹脂をノボラック型フェノール樹脂で硬化させた
エポキシ樹脂が用いられている。
Conventionally, electronic components such as diodes, transistors, and integrated circuits are sealed with a thermosetting resin. Especially for integrated circuits, 0-cresol novolak epoxy resin, which has excellent heat resistance and moisture resistance, is cured with a novolak type phenol resin. Epoxy resin is used.

ところが近年、集積回路の高集積化に伴いチップがだ
んだん大型化し、かつパッケージは従来のDIPタイプか
ら表面実装化された小型、薄型のフラットパッケージ、
SOP、SOJ、PLCCに変わってきている。
However, in recent years, chips have become larger and larger as integrated circuits have become more highly integrated, and packages have become smaller, thinner flat packages that have been surface mounted from conventional DIP types,
It is changing to SOP, SOJ, PLCC.

即ち大型チップを小型で薄いパッケージに封入するこ
とになり、応力によりクラック発生、これらのクラック
による耐湿性の低下等の問題が大きくクローズアップさ
れてきている。
That is, a large chip is sealed in a small and thin package, and cracks are generated due to stress, and problems such as a decrease in moisture resistance due to the cracks have been greatly highlighted.

特に半田づけの工程において急激に200℃以上の高温
にさらされることによりパッケージの割れや樹脂とチッ
プの剥離により耐湿性が劣化してしまうといった問題点
がでてきている。
In particular, there is a problem that the package is cracked due to sudden exposure to a high temperature of 200 ° C. or more in the soldering process, and the moisture resistance is deteriorated due to the separation of the resin and the chip.

これらの大型チップを封止するのに適した、信頼性の
高い封止用樹脂組成物の問題が望まれてきている。
There is a demand for a highly reliable sealing resin composition suitable for sealing these large chips.

これらの問題を解決するために半田付け時の熱衝撃を
緩和する目的で、熱可塑性オリゴマーの添加(特開昭62
−115849号公報)や各種シリコーン化合物の添加(特開
昭62−11585号公報、62−116654号公報62−128162号公
報)、更にはシリコーン変性(特開昭62−136860号公
報)などの手法で対処しているがいずれも半田付け時に
パッケージにクラックが生じてしまい信頼性の優れた半
導体封止用エポキシ樹脂組成物を得るまでには至らなか
った。
In order to solve these problems, thermoplastic oligomers were added to alleviate the thermal shock during soldering (Japanese Patent Laid-Open No.
No. 1-115849), addition of various silicone compounds (Japanese Patent Application Laid-Open No. 62-11585, Japanese Patent Application Laid-Open No. 62-116654 and Japanese Patent Application Laid-Open No. 62-128162), and further, silicone modification (Japanese Patent Application Laid-Open No. 62-136860). However, in any case, cracks occurred in the package at the time of soldering, and it was not possible to obtain a highly reliable epoxy resin composition for semiconductor encapsulation.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

本発明の目的とするところは、半田耐熱性に優れた半
導体封止用エポキシ樹脂組成物を提供することにある。
An object of the present invention is to provide an epoxy resin composition for semiconductor encapsulation having excellent solder heat resistance.

〔課題を解決するための手段〕[Means for solving the problem]

本発明者らはこれらの問題を解決するために鋭意研究
を進め、次の組成を有する樹脂組成物を見い出した。
The present inventors have intensively studied to solve these problems, and have found a resin composition having the following composition.

下記構造を有するエポキシ樹脂を総エポキシ量の30〜
100%配合し、 (R1は水素又はメチル基)そして下記式で示されるフェ
ノールノボラック系硬化剤を総硬化剤中の30〜100重量
%配合し、 さらに硬化促進剤と無機充填材を配合し、上記問題点を
改良しうる半導体封止用樹脂組成物が得られることを見
い出し、本発明を完成するに至ったものである。
Epoxy resin having the following structure is 30 ~
100% blended, (R 1 is hydrogen or a methyl group) and a phenol novolak-based curing agent represented by the following formula is blended in an amount of 30 to 100% by weight of the total curing agent, Furthermore, it has been found that a resin composition for semiconductor encapsulation which can improve the above-mentioned problems can be obtained by blending a curing accelerator and an inorganic filler, thereby completing the present invention.

〔作 用〕(Operation)

本発明で用いられる(A)成分としてのビフェニル型
エポキシ化合物は半田耐熱性に有効な3つの効果、強靭
性、低弾性、低粘度を有する。これらの効果は式〔I〕
に示した化学構造に起因する。すなわち、平面構造ゆえ
に分子同志のパッキングが向上し分子間引力の効果が大
きくなるために強靭性が発現し熱応力や水蒸気圧に強い
耐久性を有し、半田耐熱性が向上する。又、1分子中に
エポキシ基が2ヶしかない低分子であるため、架橋密度
の低い樹脂構造となり、弾性率、特にTg以上の領域の弾
性率が顕著に低下する。弾性率が低下することによる熱
応力の低域はむろん半田耐熱性の向上につながってい
る。さらに低分子の結晶性化合物であるために、溶融粘
度が175℃近傍で数センチポイズときわめて低く、通常
の樹脂系に比較して非常に多くのフィラーを添加しうる
配合系となる。フィラーが多くなることにより低吸水
化、高強度化、低応力化が生じ、半田耐熱性はやはり向
上する。
The biphenyl type epoxy compound as the component (A) used in the present invention has three effects effective for solder heat resistance, toughness, low elasticity, and low viscosity. These effects are represented by the formula [I]
This is due to the chemical structure shown in FIG. That is, the packing between the molecules is improved due to the planar structure, and the effect of the intermolecular attraction is increased, so that the toughness is developed, the durability against the heat stress and the water vapor pressure is increased, and the solder heat resistance is improved. Further, since it is a low molecule having only two epoxy groups in one molecule, a resin structure having a low crosslink density is obtained, and the elastic modulus, particularly in the region above Tg, is remarkably reduced. The lower range of the thermal stress due to the lowering of the elastic modulus leads to the improvement of the solder heat resistance as a matter of course. Furthermore, since it is a low molecular crystalline compound, the melt viscosity is extremely low at several centipoise at around 175 ° C., and it becomes a compounding system to which a much larger amount of filler can be added as compared with a normal resin system. As the amount of filler increases, low water absorption, high strength, and low stress occur, and the solder heat resistance also improves.

式〔I〕で示されるビフェニル型エポキシ化合物は、
総エポキシ樹脂中の30〜100重量%を占める必要があ
る。30重量%未満だと上記の効果が十分発現せず、半田
耐熱性が低下する。なお、併用するエポキシ樹脂は、エ
ポキシ基を有するもの全般をいう。たとえばビスフェノ
ール型エポキシ樹脂、ノボラック型エポキシ樹脂等のこ
とをいう。
The biphenyl type epoxy compound represented by the formula (I) is
It must account for 30 to 100% by weight of the total epoxy resin. If the amount is less than 30% by weight, the above effects are not sufficiently exhibited, and the solder heat resistance is reduced. The epoxy resin used in combination refers to any epoxy resin having an epoxy group. For example, it refers to a bisphenol-type epoxy resin, a novolak-type epoxy resin, or the like.

本発明で用いられる(B)成分としてのイミド環含有
フェノールノボラック硬化剤は、半田耐熱性に有効な効
果、すなわち、強靭化、低弾性化、金属に対する接着性
向上に加え、Tgが高いという特徴を有する。すなわち、
(A)成分のビフェニル型エポキシ化合物と同様に、分
子内に平面構造を有しているために、強靭化と低弾性化
が生じる。さらに、イミド環はN、O原子を含む極性構
造でもあるため、金属との接着性が向上し、半田耐熱性
および半田処理後の耐湿性の向上に効果がある。
The imide ring-containing phenol novolak curing agent as the component (B) used in the present invention is effective for soldering heat resistance, that is, it has high Tg in addition to toughness, low elasticity, and improved adhesion to metals. Having. That is,
Like the biphenyl-type epoxy compound of the component (A), the compound has a planar structure in the molecule, so that toughness and low elasticity occur. Furthermore, since the imide ring also has a polar structure containing N and O atoms, the adhesion to metal is improved, which is effective in improving solder heat resistance and moisture resistance after soldering.

極性のため、吸水率の向上が懸念されたが、実際には
通常のフェノールノボラック樹脂を用いた場合と比較し
て、ほとんど吸水率は変わらなかった。
Although there was a concern that the water absorption was improved due to the polarity, the water absorption was not substantially changed as compared with the case where a normal phenol novolak resin was used.

なお、通常側鎖に反応性を有しない基を導入すると、
たしかに強靭化、低弾性率化はおこるが、Tgは低下す
る。にもかかわらず、イミド環を導入した時はTgの向上
が生じ、成形性、耐湿性が向上し、ハンドリングが非常
に容易になる。イミド環の平面性に加え、巨大な分子に
よる主鎖の分子運動の抑制が原因と考えられる。
In addition, when a group having no reactivity is usually introduced into a side chain,
Certainly, toughness and low elastic modulus occur, but Tg decreases. Nevertheless, when an imide ring is introduced, Tg is improved, moldability and moisture resistance are improved, and handling becomes extremely easy. It is thought that the suppression of the molecular motion of the main chain by the giant molecule is caused by the planarity of the imide ring.

式〔II〕で示されるイミド環含有フェノールノボラッ
クにおいて、 の値は0.05以上0.8以下が望ましい。0.05未満の時はイ
ミド環の効果が十分でなく、半田耐熱性が不十分であ
る。又0.8より大きい時は、フェノール性OHの量が非常
に少ないため、硬化性、成形性、Tg等が低下する。
In the imide ring-containing phenol novolak represented by the formula (II), Is desirably 0.05 or more and 0.8 or less. When it is less than 0.05, the effect of the imide ring is not sufficient, and the solder heat resistance is insufficient. On the other hand, when it is larger than 0.8, the amount of phenolic OH is very small, so that the curability, moldability, Tg, etc. are reduced.

式〔II〕で示されるイミド環含有フェノールノボラッ
クは、総硬化剤量中の30〜100重量%を占める必要があ
る。30%未満だと上記の効果が十分発現せず半田耐熱性
が低下する。なお併用する硬化剤としては分子にフェノ
ール性OH基を有するものならいずれでもよいが、例えば
フェノールノボラック硬化剤などがあげられる。
The imide ring-containing phenol novolak represented by the formula [II] needs to account for 30 to 100% by weight of the total amount of the curing agent. If it is less than 30%, the above effects are not sufficiently exhibited, and the solder heat resistance is reduced. The curing agent to be used in combination may be any one having a phenolic OH group in the molecule, and examples thereof include a phenol novolak curing agent.

(A)成分と(B)成分は本発明の最も重要な材料で
あり、この両者を併用することにより相乗効果により半
田耐熱性は大きく向上する。両者の併用により十分な相
乗効果が得られる理由は、いずれもが分子中に平面構造
を有することが物性向上のポイントであるがゆえに、お
たがいの長所を打ち消すことなく性能が上がったものと
考えられる。
The component (A) and the component (B) are the most important materials of the present invention. By using both of them, the solder heat resistance is greatly improved due to a synergistic effect. It is thought that the reason for the sufficient synergistic effect obtained by the combined use of both is that the fact that all have a planar structure in the molecule is the point of improving the physical properties, and that the performance was improved without canceling the advantages of each other. Can be

本発明の(C)成分としての硬化促進剤はエポキシ基
とフェノール性水酸基との反応を促進するものであれば
良く、一般に封止用材料に使用されているものを広く使
用することができ、例えばBDMA等の第3級アミン類、イ
ミダゾール類、1、8−ジアザビシクロ〔5、4、0〕
ウンデセン−7、トリフェニルホスフィン等の有機リン
化合物等が単独もしくは2種以上混合して用いられる。
As the curing accelerator as the component (C) of the present invention, any one can be used as long as it promotes the reaction between the epoxy group and the phenolic hydroxyl group, and those generally used as a sealing material can be widely used. For example, tertiary amines such as BDMA, imidazoles, 1,8-diazabicyclo [5,4,0]
Organic phosphorus compounds such as undecene-7 and triphenylphosphine are used alone or in combination of two or more.

本発明の(D)成分としての無機充填材としては結晶
性シリカ、溶融シリカ、アルミナ、炭酸カルシウム、タ
ルク、マイカ、ガラス繊維等が挙げられ、これらは1種
又は2種以上混合して使用される。これらの中で特に結
晶性シリカまたは溶融シリカが好適に用いられる。
Examples of the inorganic filler as the component (D) of the present invention include crystalline silica, fused silica, alumina, calcium carbonate, talc, mica, glass fiber, and the like. These may be used alone or as a mixture of two or more. You. Among them, crystalline silica or fused silica is particularly preferably used.

その他必要に応じてワックス類等の離型剤、ヘキサブ
ロムベンゼン、デカブロムビフェニルエーテル、三酸化
アンチモン等の難燃剤、カーボンブラック、ベンガラ等
の着色剤、シランカップリング剤その他熱可塑性樹脂等
を適宜添加配合することができる。
In addition, if necessary, a release agent such as wax, a flame retardant such as hexabromobenzene, decabromobiphenyl ether, antimony trioxide, a coloring agent such as carbon black and red iron, a silane coupling agent and other thermoplastic resins are appropriately used. It can be added and blended.

本発明の半導体封止用エポキシ樹脂組成物を製造する
には一般的な方法としては、所定の配合比の原料をミキ
サー等によって十分に混合した後、更にロールやニーダ
ー等により溶融混練処理し、次いで冷却固化させて適当
な大きさに粉砕することにより容易に製造することが出
来る。
As a general method for producing the epoxy resin composition for semiconductor encapsulation of the present invention, after sufficiently mixing the raw materials of a predetermined mixing ratio by a mixer or the like, further melt-kneading treatment by a roll or a kneader, Then, it can be easily manufactured by cooling and solidifying and pulverizing to an appropriate size.

〔実施例〕〔Example〕

本発明を以下の実施例で説明する。配合割合は重量部
で表わす。
The present invention is described in the following examples. The mixing ratio is expressed in parts by weight.

実施例1 ビフェニル型エポキシ化合物(イ) 90重量部 臭素化ビスフェノールA型エポキシ樹脂(軟化点65
℃、臭素含有率37%、エポキシ当量370) 10重量部 イミド環含有フェノールノボラック樹脂(ハ) 95重量部 破砕状溶融シリカ 500重量部 三酸化アンチモン 10重量部 シランカップリング剤 2重量部 トリフェニルホスフィン 2重量部 カーボンブラック 3重量部 カルナバワックス 3重量部 を常温で十分に混合し、更に95〜100℃で2軸ロールに
より混練し、冷却後粉砕して成形材料とし、これをタブ
レット化して半導体封止用エポキシ樹脂組成物を得た。
Example 1 Biphenyl type epoxy compound (A) 90 parts by weight Brominated bisphenol A type epoxy resin (softening point 65
℃, bromine content 37%, epoxy equivalent 370) 10 parts by weight Imide ring-containing phenol novolak resin (c) 95 parts by weight Fused silica 500 parts by weight Antimony trioxide 10 parts by weight Silane coupling agent 2 parts by weight triphenylphosphine 2 parts by weight carbon black 3 parts by weight Carnauba wax 3 parts by weight is sufficiently mixed at room temperature, further kneaded at 95 to 100 ° C. with a biaxial roll, cooled and pulverized to form a molding material. An epoxy resin composition for stopping was obtained.

この材料をトランスファー成形機(成形条件:金型温
度175℃、硬化時間2分)を用いて成形し、得られた成
形品を175℃、8時間で後硬化し評価した。結果を第1
表に示す。
This material was molded using a transfer molding machine (molding conditions: mold temperature: 175 ° C., curing time: 2 minutes), and the obtained molded article was post-cured at 175 ° C. for 8 hours and evaluated. First result
It is shown in the table.

実施例2 実施例1のイミド環含有フェノールノボラック樹脂
(ハ)95重量部を、イミド環含有フェノールノボラック
樹脂(ニ)100重量部に変更した以外は実施例1と同様
にして半導体封止用エポキシ樹脂組成物を得た。
Example 2 An epoxy for semiconductor encapsulation was prepared in the same manner as in Example 1 except that 95 parts by weight of the imide ring-containing phenol novolak resin (c) of Example 1 was changed to 100 parts by weight of the imide ring-containing phenol novolak resin (d). A resin composition was obtained.

この半導体封止用エポキシ樹脂組成の評価結果を第1
表に示す。
The evaluation results of the epoxy resin composition for semiconductor encapsulation are given in the first section.
It is shown in the table.

実施例3〜4、比較例1〜4 同様にして第1表に示す組成の半導体封止用エポキシ
樹脂組成物を得た。この半導体封止用エポキシ樹脂組成
物の評価結果を第1表に示す。
Examples 3 to 4 and Comparative Examples 1 to 4 Similarly, epoxy resin compositions for semiconductor encapsulation having the compositions shown in Table 1 were obtained. Table 1 shows the evaluation results of the epoxy resin composition for semiconductor encapsulation.

※1 下記式〔III〕で示されるビフェニル型エポキシ
化合物(エポキシ当量175) ※2 下記式〔IV〕で示されるビフェニル型エポキシ樹
脂化合物(エポキシ当量120) ※3 下記式〔V〕で示されるイミド環含有フェノール
ノボラック硬化剤(軟化点120℃、OH当量175) ※4 下記式〔VI〕で示されるイミド環含有フェノール
ノボラック硬化剤(軟化点120℃、OH当量180) ※5 下記式〔VII〕で示されるイミド環含有フェノー
ルノボラック硬化剤(軟化点125℃、OH当量210) ※6 下記式〔VIII〕で示されるイミド環含有フェノー
ルノボラック硬化剤(軟化点110℃、OH当量110) ※7 下記式〔IX〕で示されるイミド環含有フェノール
ノボラック硬化剤(軟化点130℃、OH当量1400) ※8 175℃2分成形後、金型が開いてから10秒後の成
形品のバコール硬度。
* 1 Biphenyl type epoxy compound represented by the following formula [III] (epoxy equivalent: 175) * 2 Biphenyl epoxy resin compound represented by the following formula [IV] (epoxy equivalent: 120) * 3 An imide ring-containing phenol novolak curing agent represented by the following formula [V] (softening point 120 ° C, OH equivalent 175) * 4 An imide ring-containing phenol novolak curing agent represented by the following formula [VI] (softening point 120 ° C, OH equivalent 180) * 5 An imide ring-containing phenol novolak curing agent represented by the following formula [VII] (softening point 125 ° C, OH equivalent 210) * 6 An imide ring-containing phenol novolak curing agent represented by the following formula [VIII] (softening point 110 ° C, OH equivalent 110) * 7 An imide ring-containing phenol novolak curing agent represented by the following formula [IX] (softening point 130 ° C, OH equivalent 1400) * 8 Bacoal hardness of molded product 10 seconds after mold opening after molding at 175 ° C for 2 minutes.

※9 テンシロン曲げ成形機を用い、250℃、負荷速度1
0mm/min、で測定。
* 9 Using a Tensilon bending machine, 250 ° C, load speed 1
Measured at 0 mm / min.

スパン64mm、幅10mm、厚み4mmの3点曲げ。 3-point bending with span of 64mm, width of 10mm and thickness of 4mm.

※10 成形品(チップサイズ36mm2、パッケージ厚2mm)
20ヶについて、85℃、85%RHの水蒸気下で72時間処理
後、240℃のIRリフロー処理を行い、クラックの発生し
た個数を示す。
* 10 Molded product (chip size 36 mm 2 , package thickness 2 mm)
For 20 samples, the number of cracks is shown after performing an IR reflow process at 240 ° C. after performing a process for 72 hours under steam at 85 ° C. and 85% RH.

※11 成形品(チップサイズ36mm2、パッケージ厚2mm)
20ヶについて、215℃のVPS処理を行なったのち、125
℃、100%RHの水蒸気下で500時間処理を行い、ICチップ
の故障が生じた個数を示す。
* 11 Molded product (chip size 36mm 2 , package thickness 2mm)
After performing VPS treatment at 215 ° C for 20
Shows the number of IC chips that have been processed for 500 hours under steam at 100 ° C and 100% RH.

〔発明の効果〕〔The invention's effect〕

本発明のビフェニル型エポキシ樹脂、イミド環含有フ
ェノールノボラック硬化剤、硬化促進剤、無機充填材を
必須成分とする半導体封止用樹脂組成物は半田耐熱性お
よび耐湿性に優れており、高集積度IC封止用樹脂組成物
として非常に信頼性の高いものである。
The resin composition for semiconductor encapsulation containing the biphenyl type epoxy resin, the imide ring-containing phenol novolak curing agent, the curing accelerator, and the inorganic filler as essential components of the present invention has excellent solder heat resistance and moisture resistance, and has a high degree of integration. It is very reliable as a resin composition for IC encapsulation.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI H01L 23/31 (56)参考文献 特開 平4−227624(JP,A) 特開 平4−153214(JP,A) 特開 昭53−134097(JP,A) 特開 平4−20518(JP,A) 特開 平3−197527(JP,A) (58)調査した分野(Int.Cl.6,DB名) C08G 59/24 C08G 59/62 C08L 63/00 - 63/10 H01L 23/29 ──────────────────────────────────────────────────の Continuation of the front page (51) Int.Cl. 6 Identification symbol FI H01L 23/31 (56) References JP-A-4-227624 (JP, A) JP-A-4-153214 (JP, A) JP-A-53-134097 (JP, A) JP-A-4-20518 (JP, A) JP-A-3-197527 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) C08G 59 / 24 C08G 59/62 C08L 63/00-63/10 H01L 23/29

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】(A)下記式〔I〕で示されるビフェニル
型エポキシ化合物 (式中R1は、水素又はメチル基) を総エポキシ樹脂量に対して30〜100重量%含有するエ
ポキシ樹脂 (B)下記式〔II〕で示される構造のイミド環含有フェ
ノールノボラック硬化剤 を総硬化剤量に対して30〜100重量%含むフェノールノ
ボラック系硬化剤。 (C)硬化促進剤 (D)無機充填材を必須成分とする半導体封止用エポキ
シ樹脂組成物。
1. A biphenyl type epoxy compound represented by the following formula [I]: (Wherein R 1 is hydrogen or a methyl group) 30 to 100% by weight based on the total amount of epoxy resin (B) An imide ring-containing phenol novolak curing agent having a structure represented by the following formula [II] Is a phenol novolak-based curing agent containing 30 to 100% by weight based on the total amount of the curing agent. (C) A curing accelerator (D) An epoxy resin composition for semiconductor encapsulation containing an inorganic filler as an essential component.
JP27543090A 1990-10-16 1990-10-16 Resin composition Expired - Fee Related JP2938174B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27543090A JP2938174B2 (en) 1990-10-16 1990-10-16 Resin composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27543090A JP2938174B2 (en) 1990-10-16 1990-10-16 Resin composition

Publications (2)

Publication Number Publication Date
JPH04153213A JPH04153213A (en) 1992-05-26
JP2938174B2 true JP2938174B2 (en) 1999-08-23

Family

ID=17555411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27543090A Expired - Fee Related JP2938174B2 (en) 1990-10-16 1990-10-16 Resin composition

Country Status (1)

Country Link
JP (1) JP2938174B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH082940B2 (en) * 1990-10-30 1996-01-17 信越化学工業株式会社 Epoxy resin composition and semiconductor device
JP3308397B2 (en) * 1994-07-07 2002-07-29 住友ベークライト株式会社 Epoxy resin composition for semiconductor encapsulation
KR100413357B1 (en) * 2000-12-28 2003-12-31 제일모직주식회사 Epoxy resin composition for encapsulating semiconductor device
EP1554324B1 (en) * 2002-10-15 2008-05-28 Agfa Graphics N.V. Polymer for heat-sensitive lithographic printing plate precursor
US7563556B2 (en) * 2006-11-17 2009-07-21 Kodak Graphic Communications Gmbh Multilayer element with low pH developer solubility

Also Published As

Publication number Publication date
JPH04153213A (en) 1992-05-26

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