JP4296820B2 - Epoxy resin composition and semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an epoxy resin composition for semiconductor encapsulation and a semiconductor device.
[0002]
[Prior art]
In recent years, as electronic devices have become more sophisticated and lighter, thinner and smaller, semiconductor devices have been highly integrated and surface-mounted. In connection with this, the present condition is that the demand for the epoxy resin composition for semiconductor encapsulation becomes increasingly severe. In particular, when surface mounting a semiconductor device, the moisture that has been absorbed rapidly expands during the temperature rising process during the soldering process, reducing the adhesion at the interface between the semiconductor element and the cured product of the epoxy resin composition. There is a problem of losing sex. For this reason, the improvement of the adhesiveness between the hardened | cured material of an epoxy resin composition and a semiconductor element and by extension, the improvement of solder resistance have become an important subject for a sealing material.
[0003]
As a method for improving the solder resistance between the cured product of the epoxy resin composition and the semiconductor element, a method of adding polydimethylsiloxane (for example, see Patent Documents 1 and 2) has been studied. A polyalkylene oxide component is introduced for compatibility, but this polyalkylene oxide component is inferior in water resistance due to a hydrophilic group, and is sealed using an epoxy resin composition containing this organopolysiloxane. Increases the water absorption rate and decreases the solder crack resistance. Under such circumstances, development of a method capable of improving the solder crack resistance has been strongly desired.
[0004]
[Patent Document 1]
JP 09-316305 A (pages 1 to 8)
[Patent Document 2]
JP 11-181056 A (1-6 pages)
[0005]
[Problems to be solved by the invention]
The present invention provides an epoxy resin composition for semiconductor encapsulation and a semiconductor device having good adhesion and excellent solder crack resistance characteristics.
[0006]
[Means for Solving the Problems]
The present invention
[1] An essential component is (A) an epoxy resin, (B) a phenol resin, (C) a curing accelerator, (D) an inorganic filler, and (E) an organopolysiloxane represented by the general formula (1). The organopolysiloxane represented by the above general formula (1) is contained in 0.01 to 5% by weight in the total epoxy resin composition, and the (A) epoxy resin is an epoxy represented by the general formula (2). for semiconductor encapsulation, characterized in resins der Rukoto epoxy resin composition,
[Formula 4]
(R is a monovalent organic group having at least one carboxyl group having 1 to 40 carbon atoms, and the remaining groups are monovalent groups selected from hydrogen, phenyl group, or methyl group, and are identical to each other. (N is an average value and is a positive number from 1 to 50.)
[0007]
[Chemical formula 5]
(N is an average value and a positive number from 1 to 10)
[0008]
[ 2 ] The epoxy resin composition for semiconductor encapsulation according to item [1 ] , wherein the phenolic resin is a phenolic resin represented by the general formula (3),
[Chemical 6]
(N is an average value and a positive number from 1 to 10)
[0009]
[ 3 ] A semiconductor device comprising a semiconductor element sealed using the epoxy resin composition for sealing a semiconductor according to any one of [1] or [2] ,
It is.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
The epoxy resin used in the present invention includes monomers, oligomers, and polymers in general having two or more epoxy groups in one molecule, and its molecular weight and molecular structure are not particularly limited. For example, biphenyl type epoxy resin, bisphenol Type epoxy resin, stilbene type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, triphenolmethane type epoxy resin, alkyl-modified triphenolmethane type epoxy resin, triazine nucleus-containing epoxy resin, dicyclopentadiene modified phenol type epoxy Examples thereof include resins, phenol aralkyl type epoxy resins (having a phenylene skeleton, a biphenylene skeleton, etc.), naphthol type epoxy resins, and the like. These may be used alone or in combination. From the viewpoint of improving solder crack resistance, an epoxy resin represented by the general formula (2) is preferable.
[Chemical 7]
(N is an average value and a positive number from 1 to 10)
[0011]
The phenol resin used in the present invention includes monomers, oligomers, and polymers in general having two or more phenolic hydroxyl groups in one molecule, and its molecular weight and molecular structure are not particularly limited. For example, phenol novolak resin, cresol Examples include novolak resin, dicyclopentadiene-modified phenol resin, terpene-modified phenol resin, triphenolmethane type resin, phenol aralkyl resin (having a phenylene skeleton, biphenylene skeleton, etc.), naphthol aralkyl resin, and the like. It may be used. From the viewpoint of improving solder crack resistance, a phenol resin represented by the general formula (3) is preferable. Moreover, as a compounding quantity of a phenol resin, it is preferable that ratio of the number of epoxy groups of all the epoxy resins and the number of phenolic hydroxyl groups of all the phenol resins is 0.8-1.3.
[Chemical 8]
(N is an average value and a positive number from 1 to 10)
[0012]
As a hardening accelerator used for this invention, what is necessary is just to accelerate | stimulate the hardening reaction of an epoxy group and a phenolic hydroxyl group, and what is generally used for a sealing material can be used. Examples thereof include 1,8-diazabicyclo (5,4,0) undecene-7, triphenylphosphine, 2-methylimidazole, tetraphenylphosphonium / tetraphenylborate and the like, and these may be used alone or in combination. .
[0013]
As an inorganic filler used for this invention, what is generally used for the epoxy resin composition for semiconductor sealing can be used. Examples thereof include fused silica, crystalline silica, talc, alumina, silicon nitride and the like, and the most preferably used is spherical fused silica. These inorganic fillers may be used alone or in combination. These may be surface-treated with a coupling agent. As for the compounding quantity of an inorganic filler, 78 to 93 weight% is preferable in all the epoxy resin compositions. If the lower limit is not reached, sufficient solder resistance cannot be obtained, and if it exceeds the upper limit, sufficient fluidity may not be obtained.
[0014]
The organopolysiloxane represented by the general formula (1) used in the present invention can improve adhesion to various metals in a semiconductor device, and as a result, can improve solder crack resistance particularly at 260 ° C. Is. R in the organopolysiloxane represented by the general formula (1) is a monovalent organic group, and at least one of the total organic groups has a monovalent organic group having a carboxyl group having 1 to 40 carbon atoms. And the remaining organic group is a compound composed of one or more groups selected from the group consisting of hydrogen, phenyl group and methyl group, and may be the same or different from each other. When the carbon number of the monovalent organic group having a carboxyl group exceeds the upper limit, compatibility with the resin deteriorates and the package appearance deteriorates. Moreover, n in General formula (1) is an average value and is a positive number of 1-50. When the value of n exceeds the upper limit value, the viscosity of the oil alone increases and the fluidity deteriorates. When the organopolysiloxane represented by the general formula (1) of the present invention is used, there is no problem that the water absorption rate is increased without impairing the fluidity and the package appearance, and it does not contain polyalkylene oxide. The solder resistance between the cured product of the resin composition and the semiconductor element can be improved.
[Chemical 9]
[0015]
The compounding quantity of the organopolysiloxane represented by General formula (1) is 0.01 to 5 weight% in all the epoxy resin compositions. If the lower limit is not reached, sufficient adhesion cannot be obtained, and if the upper limit is exceeded, the amount of oozing out is large and the appearance of the package becomes dirty.
[0016]
The epoxy resin composition of the present invention comprises an epoxy resin, a phenol curing agent, a curing accelerator, an inorganic filler, an organopolysiloxane represented by the general formula (1) as essential components, and in addition to this, as necessary, Silane coupling agents such as epoxy silane, mercapto silane, amino silane, alkyl silane, ureido silane, vinyl silane, titanate coupling agent, aluminum coupling agent, coupling agent such as aluminum / zirconium coupling agent, coloring of carbon black, etc. , Release agents such as natural wax and synthetic wax, low stress additives such as silicone oil and rubber, brominated epoxy resin, antimony trioxide, aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, phosphazene Add additives such as flame retardant as appropriate Combined even if no problem.
[0017]
The epoxy resin composition of the present invention can be obtained by mixing the raw materials sufficiently uniformly using a mixer or the like, then melt-kneading with a hot roll or a kneader, cooling and pulverizing.
The epoxy resin composition of the present invention is used to encapsulate various electronic components such as semiconductor elements, and to manufacture semiconductor devices by conventional molding methods such as transfer molding, compression molding, and injection molding. do it.
[0018]
【Example】
Examples of the present invention are shown below, but the present invention is not limited thereto. The blending ratio is parts by weight.
The organopolysiloxanes 1 to 13 used in Examples and Comparative Examples are shown below. Moreover, about organopolysiloxane 1-12, it summarizes in Table 1 about R and n in General formula (1).
[0019]
Organopolysiloxane 1: Organopolysiloxane represented by the formula (4)
[0020]
Organopolysiloxane 2: Organopolysiloxane represented by the formula (5)
[0021]
Organopolysiloxane 3: Organopolysiloxane represented by the formula (6)
[0022]
Organopolysiloxane 4: Organopolysiloxane represented by the formula (7)
[0023]
Organopolysiloxane 5: Organopolysiloxane represented by the formula (8)
[0024]
Organopolysiloxane 6: Organopolysiloxane represented by the formula (9)
[0025]
Organopolysiloxane 7: Organopolysiloxane represented by the formula (10)
[0026]
Organopolysiloxane 8: Organopolysiloxane represented by the formula (11)
[0027]
Organopolysiloxane 9: Organopolysiloxane represented by the formula (12)
[0028]
Organopolysiloxane 10: Organopolysiloxane represented by the formula (13)
[0029]
Organopolysiloxane 11: Organopolysiloxane represented by the formula (14)
[0030]
Organopolysiloxane 12: Organopolysiloxane represented by the formula (15)
[0031]
Organopolysiloxane 13: Organopolysiloxane represented by the formula (16)
[0032]
[Table 1]
[0033]
Example 1
Epoxy resin 1: epoxy resin represented by formula (2) (Nippon Kayaku Co., Ltd., NC3000P, softening point 58 ° C., epoxy equivalent 273, hereinafter referred to as E-1) 7.78 parts by weight
[0034]
Phenolic resin 1: a phenolic resin represented by the formula (3) (Meiwa Kasei Co., Ltd., MEH-7851SS, a softening point of 107 ° C., a hydroxyl equivalent of 204, hereinafter referred to as H-1)
5.81 parts by weight
[0035]
Were mixed for 8 minutes at 95 ° C. using a heat roll, cooled and pulverized to obtain an epoxy resin composition. The obtained epoxy resin composition was evaluated by the following methods. The results are shown in Table 2.
[0036]
Evaluation Method Spiral Flow: Using a spiral flow measurement mold according to EMMI-1-66, measurement was performed at a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, and a curing time of 120 seconds. The unit is cm. The criteria for determination were less than 70 cm as unacceptable and 70 cm or more as acceptable.
Package appearance: Using a low-pressure transfer molding machine, mold 80pQFP (2mm thickness, chip size 9.0mm x 9.0mm) with mold temperature 175 ° C, injection pressure 9.6MPa, curing time 120 seconds, package visually Appearance dirt was evaluated. As for the package appearance judgment standard, a dirty one is indicated by “X”, and a non-dirty one is indicated by “◯”.
Solder crack resistance: The package used in the package appearance was post-cured at 175 ° C. for 8 hours, and the resulting package was humidified at 85 ° C. and 85% relative humidity for 168 hours, and then separately soldered at 240 ° C. and 260 ° C. Ten packages each were immersed in the bath for 10 seconds. The package was observed with a microscope, and the crack generation rate [(crack generation rate) = (number of external crack generation packages) / (total number of packages) × 100] was calculated. Units%. The number of packages evaluated was 20. Moreover, the ratio of the peeling area of the hardened | cured material of a semiconductor element and an epoxy resin composition was measured using the ultrasonic flaw detector, and peeling rate [(peeling rate) = (peeling area) / (semiconductor element area) x100] Asked. Units%. The number of packages evaluated was 20. The criterion for solder crack resistance was that the crack generation rate and the peeling rate were 0% at 240 ° C., and the crack generation rate was 0% and the peeling rate was 20% or less at 260 ° C.
[0037]
Examples 2-14, Comparative Examples 1-7
According to the composition of Table 2 and Table 3, an epoxy resin composition was obtained in the same manner as in Example 1 and evaluated in the same manner as in Example 1. The results are shown in Tables 2 and 3.
[0038]
[Table 2]
[0039]
[Table 3]
[0040]
The raw materials used other than Example 1 are shown below.
Epoxy resin 2: biphenyl type epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., YX-4000, epoxy equivalent 190 g / eq, melting point 105 ° C., hereinafter referred to as E-2)
Phenol resin 2: paraxylylene-modified novolak-type phenol resin (manufactured by Mitsui Chemicals, XLC-LL, hydroxyl group equivalent 165 g / eq, softening point 79 ° C., hereinafter referred to as H-2)
[0041]
【The invention's effect】
According to the present invention, it is possible to obtain an epoxy resin composition for semiconductor encapsulation and a semiconductor device having good adhesion and excellent solder crack resistance.

Claims (3)

(A) an epoxy resin, (B) a phenol resin, (C) a curing accelerator, (D) an inorganic filler, and (E) an organopolysiloxane represented by the general formula (1) as essential components, The organopolysiloxane represented by the formula (1) is contained in 0.01 to 5% by weight in the total epoxy resin composition, and the (A) epoxy resin is an epoxy resin represented by the general formula (2). An epoxy resin composition for semiconductor encapsulation, characterized by:
(R is a monovalent organic group having at least one carboxyl group having 1 to 40 carbon atoms, and the remaining groups are monovalent groups selected from hydrogen, phenyl group, or methyl group, and are identical to each other. (N is an average value and is a positive number from 1 to 50.)
(N is an average value and a positive number from 1 to 10) Phenolic resin, the general formula (3) is a phenol resin represented by claim 1 Symbol mounting semiconductor encapsulating epoxy resin composition.
(N is an average value and a positive number from 1 to 10) Wherein a obtained by encapsulating a semiconductor element using the epoxy resin composition for semiconductor encapsulation according to claim 1 or 2.