JP2004300327A - Epoxy resin composition and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an epoxy resin composition for semiconductor sealing having characteristics having good adhesiveness and excellent in solder crack resistance and a semiconductor device. <P>SOLUTION: The epoxy resin composition for semiconductor sealing comprises (A) an epoxy resin, (B) a phenol resin, (C) a curing accelerator, (D) an inorganic filler and (E) an organopolysiloxane having a specific structure containing a monovalent organic group having a 1-40C carboxy group as essential components, and the component E is contained in an amount of 0.01-5 wt.% based on total epoxy resin composition. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

（Ｒは少なくとも１つ以上が炭素数１〜４０のカルボキシル基を有する一価の有機基であり、残余の基は水素、フェニル基、又はメチル基から選ばれる一価の基であり、互いに同一であっても異なっていてもよい。ｎは平均値で、１〜５０の正数である。）
【０００７】
［２］ エポキシ樹脂が、一般式（２）で表されるエポキシ樹脂である第［１］項記載の半導体封止用エポキシ樹脂組成物、
【化５】

（ｎは平均値で、１〜１０の正数）
【０００８】
［３］ フェノール樹脂が、一般式（３）で表されるフェノール樹脂である第［１］又は［２］項記載の半導体封止用エポキシ樹脂組成物、
【化６】

（ｎは平均値で、１〜１０の正数）
【０００９】
［４］ 第［１］〜［３］項のいずれかに記載の半導体封止用エポキシ樹脂組成物を用いて半導体素子を封止してなることを特徴とする半導体装置、
である。
【００１０】
【発明の実施の形態】
本発明に用いるエポキシ樹脂としては、１分子内にエポキシ基を２個以上有するモノマー、オリゴマー、ポリマー全般を言い、その分子量、分子構造を特に限定するものではないが、例えばビフェニル型エポキシ樹脂、ビスフェノール型エポキシ樹脂、スチルベン型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、トリフェノールメタン型エポキシ樹脂、アルキル変性トリフェノールメタン型エポキシ樹脂、トリアジン核含有エポキシ樹脂、ジシクロペンタジエン変性フェノール型エポキシ樹脂、フェノールアラルキル型エポキシ樹脂（フェニレン骨格、ビフェニレン骨格等を有する）、ナフトール型エポキシ樹脂等が挙げられ、これらは単独でも混合して用いてもよい。耐半田クラック性の向上という点からは、一般式（２）に示されるエポキシ樹脂が好ましい。
【化７】

（ｎは平均値で、１〜１０の正数）
【００１１】
本発明に用いるフェノール樹脂としては、１分子内にフェノール性水酸基を２個以上有するモノマー、オリゴマー、ポリマー全般を言い、その分子量、分子構造を特に限定するものではないが、例えばフェノールノボラック樹脂、クレゾールノボラック樹脂、ジシクロペンタジエン変性フェノール樹脂、テルペン変性フェノール樹脂、トリフェノールメタン型樹脂、フェノールアラルキル樹脂（フェニレン骨格、ビフェニレン骨格等を有する）、ナフトールアラルキル樹脂等が挙げられ、これらは単独でも混合して用いてもよい。耐半田クラック性の向上という点からは、一般式（３）に示されるフェノール樹脂が好ましい。またフェノール樹脂の配合量としては、全エポキシ樹脂のエポキシ基数と全フェノール樹脂のフェノール性水酸基数の比が０．８〜１．３であることが好ましい。
【化８】

（ｎは平均値で、１〜１０の正数）
【００１２】
本発明に用いる硬化促進剤としては、エポキシ基とフェノール性水酸基との硬化反応を促進させるものであればよく、一般に封止材料に使用するものを用いることができる。例えば１，８−ジアザビシクロ（５，４，０）ウンデセン−７、トリフェニルホスフィン、２−メチルイミダゾール、テトラフェニルホスホニウム・テトラフェニルボレート等が挙げられ、これらは単独でも混合して用いても差し支えない。
【００１３】
本発明に用いる無機充填材としては、一般に半導体封止用エポキシ樹脂組成物に使用されているものを用いることができる。例えば、溶融シリカ、結晶シリカ、タルク、アルミナ、窒化珪素等が挙げられ、最も好適に使用されるものとしては、球状の溶融シリカである。これらの無機充填剤は、単独でも混合して用いても差し支えない。またこれらがカップリング剤により表面処理されていてもかまわない。無機充填材の配合量は、全エポキシ樹脂組成物中７８〜９３重量％が好ましい。下限値を下回ると十分な耐半田性が得られず、上限値を超えると十分な流動性が得られない恐れがある。
【００１４】
本発明に用いる一般式（１）で表されるオルガノポリシロキサンは、半導体装置内の各種金属との密着性を向上させ、その結果として特に２６０℃での耐半田クラック性を向上させることができるものである。一般式（１）で表されるオルガノポリシロキサン中のＲは一価の有機基であり、全有機基の内、少なくとも１個以上が炭素数１〜４０のカルボキシル基を有する一価の有機基であり、残余の有機基は、水素、フェニル基、メチル基の群から選ばれる１種以上の基からなる化合物であり、互いに同一であっても異なっていてもよい。カルボキシル基を有する一価の有機基の炭素数が上限値を超えると、レジンとの相溶性が悪化し、パッケージ外観が悪化する。また、一般式（１）中のｎは平均値で、１〜５０の正数である。ｎの値が上限値を超えるとオイル単体の粘度が高くなり流動性が悪化する。本発明の一般式（１）で表されるオルガノポリシロキサンを使用すると、流動性、パッケージ外観を損なうことなく、またポリアルキレンオキサイドを含まないため吸水率が高くなるという問題は発生せず、エポキシ樹脂組成物の硬化物と半導体素子間の耐半田性を向上できる。
【化９】

【００１５】
一般式（１）で表されるオルガノポリシロキサンの配合量は、全エポキシ樹脂組成物中０．０１〜５重量％である。下限値を下回ると十分な密着が得られず、上限値を超えると染み出てくる量が多くパッケージの外観が汚れる。
【００１６】
本発明のエポキシ樹脂組成物は、エポキシ樹脂、フェノール硬化剤、硬化促進剤、無機充填材、一般式（１）で表されるオルガノポリシロキサンを必須成分とし、更にこれ以外に必要に応じて、エポキシシラン、メルカプトシラン、アミノシラン、アルキルシラン、ウレイドシラン、ビニルシラン等のシランカップリング剤や、チタネートカップリング剤、アルミニウムカップリング剤、アルミニウム／ジルコニウムカップリング剤等のカップリング剤、カーボンブラック等の着色剤、天然ワックス、合成ワックス等の離型剤及び、シリコーンオイル、ゴム等の低応力添加剤、臭素化エポキシ樹脂や三酸化アンチモン、水酸化アルミニウム、水酸化マグネシウム、ほう酸亜鉛、モリブデン酸亜鉛、フォスファゼン等の難燃剤等の添加剤を適宜配合しても差し支えない。
【００１７】
また、本発明のエポキシ樹脂組成物は、ミキサー等を用いて原料を充分に均一に混合した後、更に熱ロール又はニーダー等で溶融混練し、冷却後粉砕して得られる。
本発明のエポキシ樹脂組成物を用いて、半導体素子等の各種の電子部品を封止し、半導体装置を製造するには、トランスファーモールド、コンプレッションモールド、インジェクションモールド等の従来からの成形方法で硬化成形すればよい。
【００１８】
【実施例】
以下に本発明の実施例を示すが、本発明はこれらに限定されるものではない。配合割合は重量部とする。
実施例、比較例で用いたオルガノポリシロキサン１〜１３について下記に示す。また、オルガノポリシロキサン１〜１２については、一般式（１）におけるＲ及びｎについて、表１にまとめて示す。
【００１９】
オルガノポリシロキサン１：式（４）で表されるオルガノポリシロキサン
【化１０】

【００２０】
オルガノポリシロキサン２：式（５）で表されるオルガノポリシロキサン
【化１１】

【００２１】
オルガノポリシロキサン３：式（６）で表されるオルガノポリシロキサン
【化１２】

【００２２】
オルガノポリシロキサン４：式（７）で表されるオルガノポリシロキサン
【化１３】

【００２３】
オルガノポリシロキサン５：式（８）で表されるオルガノポリシロキサン
【化１４】

【００２４】
オルガノポリシロキサン６：式（９）で表されるオルガノポリシロキサン
【化１５】

【００２５】
オルガノポリシロキサン７：式（１０）で表されるオルガノポリシロキサン
【化１６】

【００２６】
オルガノポリシロキサン８：式（１１）で表されるオルガノポリシロキサン
【化１７】

【００２７】
オルガノポリシロキサン９：式（１２）で表されるオルガノポリシロキサン
【化１８】

【００２８】
オルガノポリシロキサン１０：式（１３）で表されるオルガノポリシロキサン
【化１９】

【００２９】
オルガノポリシロキサン１１：式（１４）で表されるオルガノポリシロキサン
【化２０】

【００３０】
オルガノポリシロキサン１２：式（１５）で表されるオルガノポリシロキサン
【化２１】

【００３１】
オルガノポリシロキサン１３：式（１６）で表されるオルガノポリシロキサン
【化２２】

【００３２】
【表１】

【００３３】

【化２３】

【００３４】

【化２４】

【００３５】

を混合し、熱ロールを用いて、９５℃で８分間混練して冷却後粉砕し、エポキシ樹脂組成物を得た。得られたエポキシ樹脂組成物を、以下の方法で評価した。結果を表２に示す。
【００３６】
評価方法
スパイラルフロー：ＥＭＭＩ−１−６６に準じたスパイラルフロー測定用金型を用いて、金型温度１７５℃、注入圧力６．９ＭＰａ、硬化時間１２０秒で測定した。単位はｃｍ。判定基準は７０ｃｍ未満を不合格、７０ｃｍ以上を合格とした。
パッケージ外観：低圧トランスファー成形機を用いて、金型温度１７５℃、注入圧力９．６ＭＰａ、硬化時間１２０秒で８０ｐＱＦＰ（２ｍｍ厚、チップサイズ９．０ｍｍ×９．０ｍｍ）を成形し、目視でパッケージ外観の汚れを評価した。パッケージ外観判断基準は汚れているものを×、汚れていないものを○で表す。
耐半田クラック性：パッケージ外観で使用したパッケージを１７５℃、８時間で後硬化し、得られたパッケージを８５℃、相対湿度８５％で１６８時間加湿処理後、別々に２４０℃と２６０℃の半田槽に各１０個のパッケージを１０秒間浸漬した。顕微鏡でパッケージを観察し、クラック発生率［（クラック発生率）＝（外部クラック発生パッケージ数）／（全パッケージ数）×１００］を算出した。単位は％。評価したパッケージの数は２０個。また、半導体素子とエポキシ樹脂組成物の硬化物の剥離面積の割合を、超音波探傷装置を用いて測定し、剥離率［（剥離率）＝（剥離面積）／（半導体素子面積）×１００］を求めた。単位は％。評価したパッケージの数は２０個。耐半田クラック性判断基準は２４０℃ではクラック発生率、剥離率が０％を合格とし、２６０℃ではクラック発生率が０％、剥離率が２０％以下を合格とした。
【００３７】
実施例２〜１４、比較例１〜７
表２及び表３の配合に従い、実施例１と同様にしてエポキシ樹脂組成物を得て、実施例１と同様にして評価した。結果を表２及び表３に示す。
【００３８】
【表２】

【００３９】
【表３】

【００４０】
実施例１以外で用いた原材料を以下に示す。
エポキシ樹脂２：ビフェニル型エポキシ樹脂（ジャパンエポキシレジン（株）製、ＹＸ−４０００、エポキシ当量１９０ｇ／ｅｑ、融点１０５℃、以下、Ｅ−２という）
フェノール樹脂２：パラキシリレン変性ノボラック型フェノール樹脂（三井化学（株）製、ＸＬＣ−ＬＬ、水酸基当量１６５ｇ／ｅｑ、軟化点７９℃、以下Ｈ−２という）
【００４１】
【発明の効果】
本発明に従うと、密着性が良好で耐半田クラック性に優れた半導体封止用エポキシ樹脂組成物、及び半導体装置を得ることができる。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an epoxy resin composition for semiconductor encapsulation and a semiconductor device.
[0002]
[Prior art]
2. Description of the Related Art In recent years, as electronic devices have become more sophisticated, lighter, thinner, and smaller, semiconductor devices have been increasingly integrated and surface-mounted. Along with this, the demand for epoxy resin compositions for semiconductor encapsulation is becoming increasingly severe at present. In particular, during surface mounting of a semiconductor device, the absorbed moisture rapidly expands during the heating process during the soldering process, lowering the adhesion at the interface between the semiconductor element and the cured product of the epoxy resin composition, and reducing the reliability of the semiconductor device. There is a problem that the property is impaired. For this reason, the improvement of the adhesion between the cured product of the epoxy resin composition and the semiconductor element, and the improvement of the solder resistance, have become important issues for the sealing material.
[0003]
As a method for improving the solder resistance between the cured product of the epoxy resin composition and the semiconductor element, a method of adding polydimethylsiloxane (for example, see Patent Documents 1 and 2) has been studied. Although a polyalkylene oxide component is introduced for compatibility, the polyalkylene oxide component is inferior in water resistance due to a hydrophilic group, and is sealed with an epoxy resin composition containing the organopolysiloxane. In this case, the water absorption increases, and the solder crack resistance decreases. Under such circumstances, development of a technique capable of improving the solder crack resistance has been strongly desired.
[0004]
[Patent Document 1]
JP-A-09-316305 (pages 1 to 8)
[Patent Document 2]
JP-A-11-181056 (pages 1 to 6)
[0005]
[Problems to be solved by the invention]
The present invention provides an epoxy resin composition for semiconductor encapsulation and a semiconductor device having characteristics of good adhesion and excellent solder crack resistance.
[0006]
[Means for Solving the Problems]
The present invention
[1] (A) an epoxy resin, (B) a phenol resin, (C) a curing accelerator, (D) an inorganic filler, and (E) an organopolysiloxane represented by the general formula (1) as essential components, An epoxy resin composition for semiconductor encapsulation, wherein the organopolysiloxane represented by the general formula (1) is contained in an amount of 0.01 to 5% by weight in the total epoxy resin composition;
Embedded image

(R is a monovalent organic group in which at least one or more has a carboxyl group having 1 to 40 carbon atoms, and the remaining groups are monovalent groups selected from hydrogen, a phenyl group, and a methyl group. And n is an average value and is a positive number of 1 to 50.)
[0007]
[2] The epoxy resin composition for semiconductor encapsulation according to [1], wherein the epoxy resin is an epoxy resin represented by the general formula (2):
Embedded image

(N is an average value and a positive number from 1 to 10)
[0008]
[3] The epoxy resin composition for semiconductor encapsulation according to [1] or [2], wherein the phenol resin is a phenol resin represented by the general formula (3):
Embedded image

(N is an average value and a positive number from 1 to 10)
[0009]
[4] A semiconductor device obtained by sealing a semiconductor element using the epoxy resin composition for semiconductor sealing according to any one of [1] to [3].
It is.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
The epoxy resin used in the present invention refers to all monomers, oligomers and polymers having two or more epoxy groups in one molecule, and the molecular weight and molecular structure are not particularly limited. For example, biphenyl type epoxy resin, bisphenol Epoxy resin, stilbene epoxy resin, phenol novolak epoxy resin, cresol novolak epoxy resin, triphenolmethane epoxy resin, alkyl-modified triphenolmethane epoxy resin, epoxy resin containing triazine nucleus, dicyclopentadiene-modified phenol epoxy Resins, phenol aralkyl type epoxy resins (having a phenylene skeleton, biphenylene skeleton and the like), naphthol type epoxy resins and the like may be used, and these may be used alone or as a mixture. From the viewpoint of improving solder crack resistance, an epoxy resin represented by the general formula (2) is preferable.
Embedded image

(N is an average value and a positive number from 1 to 10)
[0011]
The phenolic resin used in the present invention refers to all monomers, oligomers and polymers having two or more phenolic hydroxyl groups in one molecule, and their molecular weight and molecular structure are not particularly limited. For example, phenol novolak resin, cresol Novolak resins, dicyclopentadiene-modified phenol resins, terpene-modified phenol resins, triphenolmethane-type resins, phenol aralkyl resins (having a phenylene skeleton, biphenylene skeleton, etc.), naphthol aralkyl resins, and the like. May be used. From the viewpoint of improving solder crack resistance, a phenol resin represented by the general formula (3) is preferable. Further, as the blending amount of the phenol resin, it is preferable that the ratio of the number of epoxy groups of all epoxy resins to the number of phenolic hydroxyl groups of all phenol resins is 0.8 to 1.3.
Embedded image

(N is an average value and a positive number from 1 to 10)
[0012]
As the curing accelerator used in the present invention, any one can be used as long as it promotes the curing reaction between the epoxy group and the phenolic hydroxyl group, and those generally used for a sealing material can be used. For example, 1,8-diazabicyclo (5,4,0) undecene-7, triphenylphosphine, 2-methylimidazole, tetraphenylphosphonium / tetraphenylborate and the like can be mentioned, and these may be used alone or in combination. .
[0013]
As the inorganic filler used in the present invention, those generally used in epoxy resin compositions for semiconductor encapsulation can be used. For example, fused silica, crystalline silica, talc, alumina, silicon nitride and the like can be mentioned, and spherical fused silica is most preferably used. These inorganic fillers may be used alone or as a mixture. These may be surface-treated with a coupling agent. The blending amount of the inorganic filler is preferably from 78 to 93% by weight based on the entire epoxy resin composition. Below the lower limit, sufficient solder resistance may not be obtained, and above the upper limit, sufficient fluidity may not be obtained.
[0014]
The organopolysiloxane represented by the general formula (1) used in the present invention can improve the adhesion to various metals in a semiconductor device, and as a result, can especially improve the solder crack resistance at 260 ° C. Things. R in the organopolysiloxane represented by the general formula (1) is a monovalent organic group, and at least one of the organic groups is a monovalent organic group having a carboxyl group having 1 to 40 carbon atoms. Wherein the remaining organic groups are compounds comprising at least one group selected from the group consisting of hydrogen, phenyl group, and methyl group, and may be the same or different. When the carbon number of the monovalent organic group having a carboxyl group exceeds the upper limit, compatibility with the resin is deteriorated, and the package appearance is deteriorated. Further, n in the general formula (1) is an average value and is a positive number of 1 to 50. If the value of n exceeds the upper limit, the viscosity of the oil alone increases and the fluidity deteriorates. When the organopolysiloxane represented by the general formula (1) of the present invention is used, there is no problem that the water absorption rate is increased without impairing the fluidity and the package appearance, and there is no polyalkylene oxide. Solder resistance between the cured product of the resin composition and the semiconductor element can be improved.
Embedded image

[0015]
The compounding amount of the organopolysiloxane represented by the general formula (1) is 0.01 to 5% by weight in the whole epoxy resin composition. If the value is below the lower limit, sufficient adhesion cannot be obtained. If the value exceeds the upper limit, a large amount of oozes out and the appearance of the package becomes dirty.
[0016]
The epoxy resin composition of the present invention comprises, as essential components, an epoxy resin, a phenol curing agent, a curing accelerator, an inorganic filler, and an organopolysiloxane represented by the general formula (1). Coloring of silane coupling agents such as epoxy silane, mercapto silane, amino silane, alkyl silane, ureido silane, vinyl silane, coupling agents such as titanate coupling agent, aluminum coupling agent, aluminum / zirconium coupling agent, and carbon black Agents, release agents such as natural wax and synthetic wax, and low-stress additives such as silicone oil and rubber, brominated epoxy resin, antimony trioxide, aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, phosphazene Add additives such as flame retardants as appropriate Combined even if no problem.
[0017]
In addition, the epoxy resin composition of the present invention is obtained by sufficiently mixing the raw materials sufficiently using a mixer or the like, further melt-kneading them with a hot roll or a kneader, cooling, and pulverizing.
Various electronic components such as semiconductor elements are encapsulated by using the epoxy resin composition of the present invention, and a semiconductor device is manufactured by curing and molding using a conventional molding method such as transfer molding, compression molding, and injection molding. do it.
[0018]
【Example】
Examples of the present invention will be described below, but the present invention is not limited to these. The mixing ratio is by weight.
The organopolysiloxanes 1 to 13 used in Examples and Comparative Examples are shown below. Table 1 summarizes R and n in the general formula (1) for the organopolysiloxanes 1 to 12.
[0019]
Organopolysiloxane 1: an organopolysiloxane represented by the formula (4)

[0020]
Organopolysiloxane 2: an organopolysiloxane represented by the formula (5)

[0021]
Organopolysiloxane 3: an organopolysiloxane represented by the formula (6)

[0022]
Organopolysiloxane 4: an organopolysiloxane represented by the formula (7)

[0023]
Organopolysiloxane 5: Organopolysiloxane represented by the formula (8)

[0024]
Organopolysiloxane 6: Organopolysiloxane represented by the formula (9)

[0025]
Organopolysiloxane 7: Organopolysiloxane represented by the formula (10)

[0026]
Organopolysiloxane 8: Organopolysiloxane represented by the formula (11)

[0027]
Organopolysiloxane 9: Organopolysiloxane represented by the formula (12)

[0028]
Organopolysiloxane 10: Organopolysiloxane represented by the formula (13)

[0029]
Organopolysiloxane 11: Organopolysiloxane represented by the formula (14)

[0030]
Organopolysiloxane 12: Organopolysiloxane represented by the formula (15)

[0031]
Organopolysiloxane 13: Organopolysiloxane represented by the formula (16)

[0032]
[Table 1]

[0033]

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[0034]

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[0035]

Were mixed, kneaded at 95 ° C. for 8 minutes using a hot roll, cooled and pulverized to obtain an epoxy resin composition. The obtained epoxy resin composition was evaluated by the following method. Table 2 shows the results.
[0036]
Evaluation method Spiral flow: Measurement was performed using a mold for spiral flow measurement according to EMMI-1-66 at a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, and a curing time of 120 seconds. The unit is cm. The criterion was a rejection of less than 70 cm and a pass of 70 cm or more.
Package appearance: Using a low-pressure transfer molding machine, 80pQFP (2 mm thick, chip size 9.0 mm × 9.0 mm) is molded with a mold temperature of 175 ° C, an injection pressure of 9.6 MPa, and a curing time of 120 seconds, and visually packages. The appearance stain was evaluated. Regarding the package appearance judgment criteria, a dirty one is represented by x, and a non-dirty one is represented by o.
Solder crack resistance: The package used in the appearance of the package was post-cured at 175 ° C for 8 hours, and the obtained package was humidified at 85 ° C and a relative humidity of 85% for 168 hours, and then separately soldered at 240 ° C and 260 ° C. Each of the ten packages was immersed in the bath for 10 seconds. The package was observed with a microscope, and the crack occurrence rate [(crack occurrence rate) = (number of external crack occurrence packages) / (total number of packages) × 100] was calculated. Units%. The number of packages evaluated was 20. The ratio of the peeled area between the semiconductor element and the cured product of the epoxy resin composition was measured using an ultrasonic flaw detector, and the peeling rate [(peeling rate) = (peeled area) / (semiconductor element area) × 100] I asked. Units%. The number of packages evaluated was 20. At 240 ° C., the crack occurrence rate and peeling rate were 0%, and at 260 ° C., the cracking rate was 0% and the peel rate was 20% or less.
[0037]
Examples 2 to 14, Comparative Examples 1 to 7
According to the formulations in Tables 2 and 3, an epoxy resin composition was obtained in the same manner as in Example 1, and evaluated in the same manner as in Example 1. The results are shown in Tables 2 and 3.
[0038]
[Table 2]

[0039]
[Table 3]

[0040]
Raw materials used in other than Example 1 are shown below.
Epoxy resin 2: Biphenyl type epoxy resin (YX-4000, manufactured by Japan Epoxy Resin Co., Ltd., epoxy equivalent 190 g / eq, melting point 105 ° C., hereinafter referred to as E-2)
Phenol resin 2: paraxylylene-modified novolak phenol resin (manufactured by Mitsui Chemicals, Inc., XLC-LL, hydroxyl equivalent 165 g / eq, softening point 79 ° C, hereinafter referred to as H-2)
[0041]
【The invention's effect】
According to the present invention, it is possible to obtain an epoxy resin composition for semiconductor encapsulation having good adhesion and excellent solder crack resistance, and a semiconductor device.

Claims (4)

(A) an epoxy resin, (B) a phenolic resin, (C) a curing accelerator, (D) an inorganic filler, and (E) an organopolysiloxane represented by the general formula (1) as essential components. An epoxy resin composition for semiconductor encapsulation, wherein the organopolysiloxane represented by the formula (1) is contained in an amount of 0.01 to 5% by weight in the total epoxy resin composition.

(R is at least one monovalent organic group having a carboxyl group having 1 to 40 carbon atoms, and the remaining groups are monovalent groups selected from hydrogen, a phenyl group, and a methyl group. And n is an average value and is a positive number of 1 to 50.) The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the epoxy resin is an epoxy resin represented by the general formula (2).

(N is an average value and a positive number from 1 to 10) The epoxy resin composition for semiconductor encapsulation according to claim 1 or 2, wherein the phenol resin is a phenol resin represented by the general formula (3).

(N is an average value and a positive number from 1 to 10) A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin composition for semiconductor encapsulation according to claim 1.