JP4894147B2 - Semiconductor sealing resin composition and semiconductor device - Google Patents
Semiconductor sealing resin composition and semiconductor device Download PDFInfo
- Publication number
- JP4894147B2 JP4894147B2 JP2005024509A JP2005024509A JP4894147B2 JP 4894147 B2 JP4894147 B2 JP 4894147B2 JP 2005024509 A JP2005024509 A JP 2005024509A JP 2005024509 A JP2005024509 A JP 2005024509A JP 4894147 B2 JP4894147 B2 JP 4894147B2
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- Prior art keywords
- epoxy resin
- compound
- resin composition
- semiconductor
- complex
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 49
- 238000007789 sealing Methods 0.000 title claims description 16
- 239000011342 resin composition Substances 0.000 title 1
- 229920000647 polyepoxide Polymers 0.000 claims description 94
- 239000003822 epoxy resin Substances 0.000 claims description 93
- 239000000203 mixture Substances 0.000 claims description 64
- 150000001875 compounds Chemical class 0.000 claims description 42
- -1 phosphine compound Chemical class 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000005011 phenolic resin Substances 0.000 claims description 21
- 125000004429 atom Chemical group 0.000 claims description 20
- 229910052717 sulfur Inorganic materials 0.000 claims description 19
- 125000004434 sulfur atom Chemical group 0.000 claims description 18
- AZQWKYJCGOJGHM-UHFFFAOYSA-N para-benzoquinone Natural products O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims description 16
- 238000005538 encapsulation Methods 0.000 claims description 15
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 claims description 15
- 239000011256 inorganic filler Substances 0.000 claims description 13
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000007822 coupling agent Substances 0.000 claims description 9
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 238000013329 compounding Methods 0.000 claims description 7
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 6
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 claims description 6
- 229940005561 1,4-benzoquinone Drugs 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 5
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical group [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 5
- 239000005350 fused silica glass Substances 0.000 claims description 4
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 claims description 4
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 claims description 3
- HNNQYHFROJDYHQ-UHFFFAOYSA-N 3-(4-ethylcyclohexyl)propanoic acid 3-(3-ethylcyclopentyl)propanoic acid Chemical compound CCC1CCC(CCC(O)=O)C1.CCC1CCC(CCC(O)=O)CC1 HNNQYHFROJDYHQ-UHFFFAOYSA-N 0.000 claims description 3
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 claims description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910002026 crystalline silica Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000006082 mold release agent Substances 0.000 claims description 3
- LKKPNUDVOYAOBB-UHFFFAOYSA-N naphthalocyanine Chemical compound N1C(N=C2C3=CC4=CC=CC=C4C=C3C(N=C3C4=CC5=CC=CC=C5C=C4C(=N4)N3)=N2)=C(C=C2C(C=CC=C2)=C2)C2=C1N=C1C2=CC3=CC=CC=C3C=C2C4=N1 LKKPNUDVOYAOBB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000454 talc Substances 0.000 claims description 3
- 229910052623 talc Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 claims description 2
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 claims description 2
- 229960001545 hydrotalcite Drugs 0.000 claims description 2
- 229910001701 hydrotalcite Inorganic materials 0.000 claims description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 2
- 229960004889 salicylic acid Drugs 0.000 claims description 2
- UTOPWMOLSKOLTQ-UHFFFAOYSA-N octacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O UTOPWMOLSKOLTQ-UHFFFAOYSA-N 0.000 claims 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- 239000011593 sulfur Substances 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 description 21
- 239000003795 chemical substances by application Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 239000001993 wax Substances 0.000 description 10
- 238000000465 moulding Methods 0.000 description 8
- 125000003396 thiol group Chemical group [H]S* 0.000 description 7
- 239000004698 Polyethylene Substances 0.000 description 6
- 125000002529 biphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C12)* 0.000 description 6
- 229920000573 polyethylene Polymers 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 238000005040 ion trap Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 150000003003 phosphines Chemical class 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 4
- 238000001721 transfer moulding Methods 0.000 description 4
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 150000004053 quinones Chemical class 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- VTWDKFNVVLAELH-UHFFFAOYSA-N 2-methylcyclohexa-2,5-diene-1,4-dione Chemical compound CC1=CC(=O)C=CC1=O VTWDKFNVVLAELH-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 2
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 229940125782 compound 2 Drugs 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 125000000542 sulfonic acid group Chemical group 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical compound SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 description 1
- ZJKWJHONFFKJHG-UHFFFAOYSA-N 2-Methoxy-1,4-benzoquinone Chemical compound COC1=CC(=O)C=CC1=O ZJKWJHONFFKJHG-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- RLQZIECDMISZHS-UHFFFAOYSA-N 2-phenylcyclohexa-2,5-diene-1,4-dione Chemical compound O=C1C=CC(=O)C(C=2C=CC=CC=2)=C1 RLQZIECDMISZHS-UHFFFAOYSA-N 0.000 description 1
- ZYAASQNKCWTPKI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propan-1-amine Chemical compound CO[Si](C)(OC)CCCN ZYAASQNKCWTPKI-UHFFFAOYSA-N 0.000 description 1
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 0 CC(*)=C(C(*)=CC(c(cc1C)cc(*)c1O*)=C)O Chemical compound CC(*)=C(C(*)=CC(c(cc1C)cc(*)c1O*)=C)O 0.000 description 1
- VKWQXIKZUWFLGL-UHFFFAOYSA-N Cc(cc1)ccc1-c1ccc(CC2=CC(O)=CC=CC2)cc1 Chemical compound Cc(cc1)ccc1-c1ccc(CC2=CC(O)=CC=CC2)cc1 VKWQXIKZUWFLGL-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 229940126214 compound 3 Drugs 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- ZKXWKVVCCTZOLD-UHFFFAOYSA-N copper;4-hydroxypent-3-en-2-one Chemical compound [Cu].CC(O)=CC(C)=O.CC(O)=CC(C)=O ZKXWKVVCCTZOLD-UHFFFAOYSA-N 0.000 description 1
- ZXKWUYWWVSKKQZ-UHFFFAOYSA-N cyclohexyl(diphenyl)phosphane Chemical compound C1CCCCC1P(C=1C=CC=CC=1)C1=CC=CC=C1 ZXKWUYWWVSKKQZ-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
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- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
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- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
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- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Substances C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 1
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- 229910052749 magnesium Inorganic materials 0.000 description 1
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- LIBWSLLLJZULCP-UHFFFAOYSA-N n-(3-triethoxysilylpropyl)aniline Chemical compound CCO[Si](OCC)(OCC)CCCNC1=CC=CC=C1 LIBWSLLLJZULCP-UHFFFAOYSA-N 0.000 description 1
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical compound CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 1
- GLTDLAUASUFHNK-UHFFFAOYSA-N n-silylaniline Chemical compound [SiH3]NC1=CC=CC=C1 GLTDLAUASUFHNK-UHFFFAOYSA-N 0.000 description 1
- BMGNSKKZFQMGDH-FDGPNNRMSA-L nickel(2+);(z)-4-oxopent-2-en-2-olate Chemical compound [Ni+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O BMGNSKKZFQMGDH-FDGPNNRMSA-L 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000004880 oxines Chemical class 0.000 description 1
- 150000005041 phenanthrolines Chemical class 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
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- IYMSIPPWHNIMGE-UHFFFAOYSA-N silylurea Chemical compound NC(=O)N[SiH3] IYMSIPPWHNIMGE-UHFFFAOYSA-N 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- CBDKQYKMCICBOF-UHFFFAOYSA-N thiazoline Chemical compound C1CN=CS1 CBDKQYKMCICBOF-UHFFFAOYSA-N 0.000 description 1
- 150000003567 thiocyanates Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- QLNOVKKVHFRGMA-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical group [CH2]CC[Si](OC)(OC)OC QLNOVKKVHFRGMA-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 235000019386 wax ester Nutrition 0.000 description 1
- XAEWLETZEZXLHR-UHFFFAOYSA-N zinc;dioxido(dioxo)molybdenum Chemical compound [Zn+2].[O-][Mo]([O-])(=O)=O XAEWLETZEZXLHR-UHFFFAOYSA-N 0.000 description 1
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- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
本発明は、半導体封止用エポキシ樹脂組成物、及びこれを用いた半導体装置に関するものである。 The present invention relates to an epoxy resin composition for semiconductor encapsulation and a semiconductor device using the same.
ＩＣ、ＬＳＩ等の半導体素子の封止方法として、エポキシ樹脂組成物のトランスファー成形が低コスト、大量生産に適しており、採用されて久しく、信頼性の点でもエポキシ樹脂や硬化剤であるフェノール樹脂の改良により特性の向上が図られてきた。しかし、近年の電子機器の小型化、軽量化、高性能化の市場動向において、半導体の高集積化も年々進み、また半導体装置の表面実装化が促進されるなかで、半導体封止用エポキシ樹脂組成物への要求は益々厳しいものとなってきている。このため、従来からのエポキシ樹脂組成物では解決出来ない問題点も出てきている。
その最大の問題点は、表面実装の採用により半導体装置が半田浸漬或いは半田リフロー工程で急激に２００℃以上の高温にさらされ、吸湿した水分が爆発的に気化する際の応力により、半導体装置内、特に半導体素子、リードフレーム、インナーリード上の金メッキや銀メッキ等の各種メッキされた各接合部分とエポキシ樹脂組成物の硬化物の界面で剥離が生じたりして、信頼性が著しく低下する現象である。また、環境問題に端を発した有鉛半田から無鉛半田への移行に伴い、半田処理時の温度が高くなり、半導体装置中に含まれる水分の気化によって発生する爆発的な応力による耐半田性が、従来以上に大きな問題となってきている。
As a sealing method for semiconductor elements such as IC and LSI, transfer molding of an epoxy resin composition is suitable for mass production at low cost and has been adopted for a long time, and a phenol resin that is an epoxy resin or a curing agent in terms of reliability. Improvements have been made to improve the characteristics. However, due to the recent trend toward smaller, lighter, and higher performance electronic devices, semiconductors have been increasingly integrated and the surface mounting of semiconductor devices has been promoted. The demand for compositions has become increasingly severe. For this reason, the problem which cannot be solved with the conventional epoxy resin composition has also come out.
The biggest problem is that by adopting surface mounting, the semiconductor device is suddenly exposed to a high temperature of 200 ° C. or higher in the solder dipping or solder reflow process, and the moisture when moisture absorbed explosively evaporates. In particular, a phenomenon in which reliability is remarkably reduced due to peeling at the interface between various plated joints such as gold plating and silver plating on semiconductor elements, lead frames, and inner leads and the cured product of the epoxy resin composition. It is. In addition, with the shift from leaded solder to lead-free solder, which originated from environmental problems, the temperature during the soldering process increased, and the solder resistance due to explosive stress generated by the evaporation of moisture contained in the semiconductor device However, it has become a bigger problem than before.
半田処理による信頼性低下を改善するために、エポキシ樹脂組成物中の無機質充填材の充填量を増加させることで低吸湿化、高強度化、低熱膨張化を達成し耐半田性を向上させ、低溶融粘度の樹脂を使用して、成形時に低粘度で高流動性を維持させる手法がある（例えば、特許文献１参照。）。この手法を用いることにより耐半田性がかなり改良されるが、無機充填材の充填割合の増加と共に、流動性が犠牲になり、エポキシ樹脂組成物がパッケージ内に十分に充填されず、空隙が生じやすくなる欠点があった。またメッキ部分とエポキシ樹脂組成物の界面での剥離を防止する為、アミノシランやメルカプトシラン等の各種カップリング剤を添加して流動性と耐半田性の両立を図る手法も提案されている（例えば、特許文献２参照。）が、この方法でも十分に良好な半導体封止用エポキシ樹脂組成物は得られるには至っていない。このようなことから、無機充填材の配合量を高めても流動性及び充填性を損なわず、信頼性を満足させる更なる技術が求められていた。 In order to improve reliability degradation due to solder processing, increase the amount of inorganic filler in the epoxy resin composition to achieve low moisture absorption, high strength, low thermal expansion, improve solder resistance, There is a technique of using a low melt viscosity resin to maintain a high fluidity at a low viscosity during molding (see, for example, Patent Document 1). Although solder resistance is considerably improved by using this method, as the filling rate of the inorganic filler increases, fluidity is sacrificed, and the epoxy resin composition is not sufficiently filled in the package, resulting in voids. There was a drawback that made it easier. In addition, in order to prevent peeling at the interface between the plated portion and the epoxy resin composition, a method for achieving both flowability and solder resistance by adding various coupling agents such as aminosilane and mercaptosilane has been proposed (for example, However, a sufficiently good epoxy resin composition for encapsulating a semiconductor has not been obtained even by this method. For this reason, there has been a demand for a further technique that satisfies the reliability without sacrificing fluidity and filling properties even when the blending amount of the inorganic filler is increased.
本発明は、上記事情に鑑みてなされたものであり、その目的は封止成形時において良好な流動性、硬化性及び流動保存特性を有し、かつ無鉛半田に対応する高温の半田処理によってもクラックが発生しない良好な耐半田性を有する半導体封止用エポキシ樹脂組成物、及び信頼性に優れた半導体装置を提供するものである。 The present invention has been made in view of the above circumstances, and its purpose is to have good fluidity, curability and fluidity preservation characteristics at the time of sealing molding, and also by a high-temperature soldering process corresponding to lead-free solder. It is an object of the present invention to provide an epoxy resin composition for encapsulating a semiconductor having good solder resistance that does not cause cracks, and a semiconductor device having excellent reliability.
本発明は、
［１］（Ａ）エポキシ樹脂、（Ｂ）フェノール樹脂、（Ｃ）無機充填材、（Ｄ）硬化促進剤、（Ｅ）金属原子を有する化合物、（Ｆ）硫黄原子を有する化合物を含むことを特徴とする半導体封止用エポキシ樹脂組成物であって、（Ｃ）無機充填材が溶融シリカ、結晶シリカ、タルク、アルミナ、又は窒化珪素であり、前記金属原子を有する化合物（Ｅ）が、Ｃｕ、Ｎｉ、Ａｌ、Ｃｏ、Ｆｅ、Ｍｎ、Ｚｎのいずれか１種以上を含む化合物であり、前記金属原子を有する化合物（Ｅ）が、アセチルアセトナート錯体、ナフテン酸錯体、サリチル酸錯体、エチレンジアミンテトラ酢酸錯体、フタロシアニン錯体、ナフタロシアニン錯体、ヒドロキシキノリン（オキシン）錯体、フェナントロリン錯体、ビピリジン錯体のいずれか１種以上の錯体化合物であり、金属原子を有する化合物（Ｅ）の配合量が全エポキシ樹脂組成物中に０．０１〜３重量％であり、前記硫黄原子を有する化合物（Ｆ）が、メルカプトシランカップリング剤であり、硫黄原子を有する化合物（Ｆ）の配合量が全エポキシ樹脂組成物中に０．０１〜３重量％である半導体封止用エポキシ樹脂組成物
The present invention
[1] containing (A) an epoxy resin, (B) a phenol resin, (C) an inorganic filler, (D) a curing accelerator, (E) a compound having a metal atom, and (F) a compound having a sulfur atom. A semiconductor sealing epoxy resin composition characterized in that (C) the inorganic filler is fused silica, crystalline silica, talc, alumina, or silicon nitride, and the compound (E) having the metal atom is Cu , Ni, Al, Co, Fe, Mn, Zn, and the compound (E) having the metal atom is an acetylacetonate complex, naphthenic acid complex, salicylic acid complex, ethylenediaminetetraacetic acid Complex complex of at least one of complex, phthalocyanine complex, naphthalocyanine complex, hydroxyquinoline (oxine) complex, phenanthroline complex and bipyridine complex , And the is from 0.01 to 3% by weight amount is in the total epoxy resin composition of a compound having a metal atom (E), the compound having a sulfur atom (F), be a mercapto silane coupling agent The compounding quantity of the compound (F) which has a sulfur atom is 0.01-3 weight% in the epoxy resin composition for semiconductor sealing in all the epoxy resin compositions
［２］前記エポキシ樹脂（Ａ）が一般式（１）で示される化合物を含む第［１］項に記載の半導体封止用エポキシ樹脂組成物、
［３］前記フェノール樹脂（Ｂ）が一般式（２）で示される化合物を含む第［１］又は［２］項に記載の半導体封止用エポキシ樹脂組成物、
［４］前記硬化促進剤（Ｄ）が、ホスフィン化合物とキノン化合物との付加物を含む第［１］ないし［３］項のいずれかに記載の半導体封止用エポキシ樹脂組成物、
［５］前記硬化促進剤（Ｄ）が、トリフェニルホスフィンと１，４−ベンゾキノンとの付加物を含む第［１］ないし［４］項のいずれかに記載の半導体封止用エポキシ樹脂組成物、
［６］さらに２級アミノシランカップリング剤を含む第［１］ないし［５］項のいずれかに記載の半導体封止用エポキシ樹脂組成物、
［７］さらにポリエチレン系ワックス、又はポリエチレン系ワックスとモンタン酸エステル系ワックスからなる離型剤を含む第［１］ないし［６］項のいずれかに記載の半導体封止用エポキシ樹脂組成物、
［８］さらにハイドロタルサイト類を含む第［１］ないし［７］項のいずれかに記載の半導体封止用エポキシ樹脂組成物、
［９］第［１］ないし［８］項のいずれかに記載の半導体封止用エポキシ樹脂組成物を用いて半導体素子を封止してなることを特徴とする半導体装置、
である。
[ 4 ] The epoxy resin composition for semiconductor encapsulation according to any one of [1] to [ 3 ], wherein the curing accelerator (D) comprises an adduct of a phosphine compound and a quinone compound.
[ 5 ] The epoxy resin composition for semiconductor encapsulation according to any one of [1] to [ 4 ], wherein the curing accelerator (D) contains an adduct of triphenylphosphine and 1,4-benzoquinone. ,
[ 6 ] The epoxy resin composition for semiconductor encapsulation according to any one of [1] to [ 5 ], further comprising a secondary aminosilane coupling agent,
[ 7 ] The epoxy resin composition for semiconductor encapsulation according to any one of [1] to [ 6 ], further comprising a polyethylene wax or a release agent comprising a polyethylene wax and a montanate ester wax,
[ 8 ] The epoxy resin composition for semiconductor encapsulation according to any one of [1] to [ 7 ], further comprising hydrotalcites,
[ 9 ] A semiconductor device comprising a semiconductor element sealed using the epoxy resin composition for semiconductor sealing according to any one of [1] to [ 8 ],
It is.
本発明に従うと、半導体素子等の封止成形時において良好な流動性、硬化性を有し、かつ無鉛半田に対応する高温の半田処理によってもクラックが発生しない良好な耐半田性を有する半導体封止用エポキシ樹脂組成物が得られるものである。 According to the present invention, a semiconductor encapsulant having good fluidity and curability at the time of sealing molding of a semiconductor element and the like and having good solder resistance that does not generate cracks even by high-temperature solder processing corresponding to lead-free solder. An epoxy resin composition for stopping is obtained.
本発明は、エポキシ樹脂、フェノール樹脂、硬化促進剤、無機充填材、金属原子を有する化合物、硫黄原子を有する化合物を必須成分とすることにより、半導体素子等の封止成形時において良好な流動性、充填性、流動保存性を有し、かつ無鉛半田に対応する高温の半田処理によってもクラックが発生しない良好な耐半田性を有する半導体封止用エポキシ樹脂組成物が得られるものである。
以下、本発明について詳細に説明する。
The present invention has good fluidity at the time of sealing molding of semiconductor elements and the like by using an epoxy resin, a phenol resin, a curing accelerator, an inorganic filler, a compound having a metal atom, and a compound having a sulfur atom as essential components. Thus, an epoxy resin composition for semiconductor encapsulation having good solder resistance, which has good filling resistance and fluid storage stability and does not generate cracks even by high-temperature soldering treatment corresponding to lead-free solder can be obtained.
Hereinafter, the present invention will be described in detail.
本発明に用いるエポキシ樹脂としては、１分子内にエポキシ基を２個以上有するモノマー、オリゴマー、ポリマー全般を言い、その分子量、分子構造は特に限定するものではないが、例えば、ビフェニル型エポキシ樹脂、ビスフェノール型エポキシ樹脂、スチルベン型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、トリフェノールメタン型エポキシ樹脂、アルキル変性トリフェノールメタン型エポキシ樹脂、トリアジン核含有エポキシ樹脂、ジシクロペンタジエン変性フェノール型エポキシ樹脂、フェノールアラルキル型エポキシ樹脂（フェニレン骨格、ビフェニレン骨格等を有する）等が挙げられ、これらは単独でも混合して用いても差し支えない。 The epoxy resin used in the present invention refers to monomers, oligomers and polymers generally having two or more epoxy groups in one molecule, and the molecular weight and molecular structure thereof are not particularly limited. For example, biphenyl type epoxy resins, Bisphenol type epoxy resin, stilbene type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, triphenolmethane type epoxy resin, alkyl-modified triphenolmethane type epoxy resin, triazine nucleus-containing epoxy resin, dicyclopentadiene modified phenol type Examples thereof include an epoxy resin and a phenol aralkyl type epoxy resin (having a phenylene skeleton, a biphenylene skeleton, etc.), and these may be used alone or in combination.
本発明で用いられるエポキシ樹脂としては、一般式（１）で表されるエポキシ樹脂が好ましい。これはエポキシ基間に疎水性で剛直なビフェニレン骨格を有しており、これを用いたエポキシ樹脂組成物の硬化物は吸湿率が低く、ガラス転移温度（以下、Ｔｇという）を越えた高温域での弾性率が低く、半導体素子、有機基板、及び金属基板との密着性に優れる。また架橋密度が低い割には耐熱性が高いという特徴を有している。
一般式（１）中のｎは平均値で、１〜５の正数、好ましくは１〜３である。ｎが下限値を下回るとエポキシ樹脂組成物の硬化性が低下する可能性がある。ｎが上限値を越えると粘度が高くなりエポキシ樹脂組成物の流動性が低下する可能性がある。一般式（１）で表されるエポキシ樹脂は、１種類を単独で用いても２種類以上を併用してもよい。
一般式（１）で表されるエポキシ樹脂の内では、式（３）で表されるエポキシ樹脂が特に好ましい。
一般式（１）で表されるエポキシ樹脂の使用量は、全エポキシ樹脂中に３０重量％以上含むことが好ましく、特に５０重量％以上が好ましい。下限値を下回ると、難燃性が不十分となる可能性がある。
N in the general formula (1) is an average value and is a positive number of 1 to 5, preferably 1 to 3. When n is less than the lower limit, the curability of the epoxy resin composition may be lowered. When n exceeds the upper limit, the viscosity increases and the fluidity of the epoxy resin composition may be reduced. The epoxy resin represented by General formula (1) may be used individually by 1 type, or may use 2 or more types together.
Among the epoxy resins represented by the general formula (1), the epoxy resin represented by the formula (3) is particularly preferable.
The amount of the epoxy resin represented by the general formula (1) is preferably 30% by weight or more, and particularly preferably 50% by weight or more in the total epoxy resin. Below the lower limit, the flame retardancy may be insufficient.
本発明に用いるフェノール樹脂としては、１分子内にフェノール性水酸基を２個以上有するモノマー、オリゴマー、ポリマー全般を言い、その分子量、分子構造を特に限定するものではないが、例えばフェノールノボラック樹脂、クレゾールノボラック樹脂、ジシクロペンタジエン変性フェノール樹脂、テルペン変性フェノール樹脂、トリフェノールメタン型樹脂、フェノールアラルキル樹脂（フェニレン骨格、ビフェニレン骨格等を有する）等が挙げられ、これらは単独でも混合して用いても差し支えない。 The phenol resin used in the present invention includes monomers, oligomers, and polymers in general having two or more phenolic hydroxyl groups in one molecule, and its molecular weight and molecular structure are not particularly limited. For example, phenol novolak resin, cresol Examples thereof include novolak resins, dicyclopentadiene-modified phenol resins, terpene-modified phenol resins, triphenolmethane type resins, phenol aralkyl resins (having a phenylene skeleton, a biphenylene skeleton, etc.), and these may be used alone or in combination. Absent.
本発明で用いられるフェノール樹脂としては、一般式（２）で表されるフェノール樹脂が好ましい。これはフェノール性水酸基間に疎水性で剛直なビフェニレン骨格を有しており、これを用いたエポキシ樹脂組成物の硬化物は吸湿率が低く、Ｔｇを越えた高温域での弾性率が低く、半導体素子、有機基板、及び金属基板との密着性に優れる。また架橋密度が低い割には耐熱性が高いという特徴を有している。
一般式（２）中のｎは平均値で、１〜５の正数、好ましくは１〜３である。ｎが下限値を下回るとエポキシ樹脂組成物の硬化性が低下する可能性がある。ｎが上限値を越えると、粘度が高くなりエポキシ樹脂組成物の流動性が低下する可能性がある。一般式（２）で表されるフェノール樹脂は、１種類を単独で用いても２種類以上を併用してもよい。
一般式（２）で表されるフェノール樹脂の内では、式（４）で表されるフェノール樹脂が特に好ましい。
一般式（２）で表されるフェノール樹脂の使用量は、全フェノール樹脂中に３０重量％以上含むことが好ましく、特に５０重量％以上が好ましい。下限値を下回ると、難燃性が不十分となる可能性がある。
In the general formula (2), n is an average value and is a positive number of 1 to 5, preferably 1 to 3. When n is less than the lower limit, the curability of the epoxy resin composition may be lowered. When n exceeds the upper limit, the viscosity becomes high and the fluidity of the epoxy resin composition may be lowered. The phenol resin represented by General formula (2) may be used individually by 1 type, or may use 2 or more types together.
Among the phenol resins represented by the general formula (2), the phenol resin represented by the formula (4) is particularly preferable.
The use amount of the phenol resin represented by the general formula (2) is preferably 30% by weight or more, and particularly preferably 50% by weight or more in the total phenol resin. Below the lower limit, the flame retardancy may be insufficient.
エポキシ樹脂とフェノール樹脂の配合量としては、全エポキシ樹脂のエポキシ基数と全フェノール樹脂のフェノール性水酸基数の比が０．８〜１．３であることが好ましく、この範囲を外れると、エポキシ樹脂組成物の硬化性の低下、或いは硬化物のガラス転移温度の低下、耐湿信頼性の低下等が生じる可能性がある。 As a compounding quantity of an epoxy resin and a phenol resin, it is preferable that the ratio of the number of epoxy groups of all epoxy resins and the number of phenolic hydroxyl groups of all phenol resins is 0.8 to 1.3. There is a possibility that the curability of the composition is lowered, the glass transition temperature of the cured product is lowered, and the moisture resistance reliability is lowered.
本発明に用いる無機充填材としては、一般に半導体封止用エポキシ樹脂組成物に使用されているものを用いることができる。例えば、溶融シリカ、結晶シリカ、タルク、アルミナ、窒化珪素等が挙げられ、最も好適に使用されるものとしては、球状の溶融シリカである。これらの無機充填剤は、単独でも混合して用いても差し支えない。無機充填材の含有量は、特に限定されないが、全エポキシ樹脂組成物中８０〜９４重量％が好ましい。下限値を下回ると十分な耐半田性が得られない可能性があり、上限値を超えると十分な流動性が得られない可能性がある。 As an inorganic filler used for this invention, what is generally used for the epoxy resin composition for semiconductor sealing can be used. Examples thereof include fused silica, crystalline silica, talc, alumina, silicon nitride and the like, and the most preferably used is spherical fused silica. These inorganic fillers may be used alone or in combination. Although content of an inorganic filler is not specifically limited, 80 to 94 weight% is preferable in all the epoxy resin compositions. If the lower limit is not reached, sufficient solder resistance may not be obtained, and if the upper limit is exceeded, sufficient fluidity may not be obtained.
本発明で用いられる硬化促進剤として、一般に半導体封止用エポキシ樹脂組成物に使用されているものを用いることができる。例えば、ホスフィン化合物とキノン化合物との付加物、１，８−ジアザビシクロ（５，４，０）ウンデセン−７等のジアザビシクロアルケン及びその誘導体、トリブチルアミン、ベンジルジメチルアミン等のアミン系化合物、２−メチルイミダゾール等のイミダゾール化合物、トリフェニルホスフィン、メチルジフェニルホスフィン等の有機ホスフィン類、テトラフェニルホスホニウム・テトラフェニルボレート、テトラフェニルホスホニウム・テトラ安息香酸ボレート、テトラフェニルホスホニウム・テトラナフトイックアシッドボレート、テトラフェニルホスホニウム・テトラナフトイルオキシボレート、テトラフェニルホスホニウム・テトラナフチルオキシボレート等のテトラ置換ホスホニウム・テトラ置換ボレート等が挙げられ、これらは１種又は２種類以上を併用してもよい。
これらのうちホスフィン化合物とキノン化合物との付加物が好ましい。ホスフィン化合物としては、例えば、トリフェニルホスフィン、トリ−ｐ−トリルホスフィン、ジフェニルシクロヘキシルホスフィン、トリシクロヘキシルホスフィン、トリブチルホスフィンなどが挙げられる。キノン化合物としては１，４−ベンゾキノン、メチル−１，４−ベンゾキノン、メトキシ−１，４−ベンゾキノン、フェニル−１，４−ベンゾキノンなどが挙げられる。これらホスフィン化合物とキノン化合物との付加物のうち、トリフェニルホスフィンと１，４−ベンゾキノンとの付加物が好ましい。ホスフィン化合物とキノン化合物との付加物の製造方法としては特に制限はないが、例えば、原料として用いられるホスフィン化合物とキノン化合物とを両者が溶解する有機溶媒中で付加反応させて単離すればよい。ホスフィン化合物とキノン化合物との付加物は、１種を単独で用いても２種以上を組み合わせて用いてもよい。
As a hardening accelerator used by this invention, what is generally used for the epoxy resin composition for semiconductor sealing can be used. For example, adducts of phosphine compounds and quinone compounds, diazabicycloalkenes such as 1,8-diazabicyclo (5,4,0) undecene-7 and derivatives thereof, amine compounds such as tributylamine, benzyldimethylamine, -Imidazole compounds such as methylimidazole, organic phosphines such as triphenylphosphine and methyldiphenylphosphine, tetraphenylphosphonium / tetraphenylborate, tetraphenylphosphonium / tetrabenzoic acid borate, tetraphenylphosphonium / tetranaphthoic acid borate, tetraphenyl And tetrasubstituted phosphonium / tetrasubstituted borates such as phosphonium / tetranaphthoyloxyborate and tetraphenylphosphonium / tetranaphthyloxyborate. Al may be used in combination with one or two or more types.
Of these, adducts of phosphine compounds and quinone compounds are preferred. Examples of the phosphine compound include triphenylphosphine, tri-p-tolylphosphine, diphenylcyclohexylphosphine, tricyclohexylphosphine, and tributylphosphine. Examples of the quinone compound include 1,4-benzoquinone, methyl-1,4-benzoquinone, methoxy-1,4-benzoquinone, and phenyl-1,4-benzoquinone. Of these adducts of phosphine compounds and quinone compounds, adducts of triphenylphosphine and 1,4-benzoquinone are preferred. Although there is no restriction | limiting in particular as a manufacturing method of the adduct of a phosphine compound and a quinone compound, For example, what is necessary is just to isolate by making an addition reaction in the organic solvent in which both the phosphine compound and quinone compound which are used as a raw material melt | dissolve. . The adduct of a phosphine compound and a quinone compound may be used individually by 1 type, or may be used in combination of 2 or more type.
本発明において用いられる金属原子を有する化合物はあらゆる形態で用いることが可能であるが、錯体化合物の形態で用いるのが好ましい。金属原子としてはＣｕ、Ｎｉ、Ａｌ、Ｃｏ、Ｆｅ、Ｍｎ、Ｚｎが好ましく、Ｃｕ、Ｎｉ、Ａｌ、Ｃｏが特に好ましい。錯体化合物としてはアセチルアセトナート錯体、ナフテン酸錯体、サリチル酸錯体、エチレンジアミンテトラ酢酸錯体、フタロシアニン錯体、ナフタロシアニン錯体、ヒドロキシキノリン（オキシン）錯体、フェナントロリン錯体、ビピリジン錯体、チオシアン酸錯体が好ましく、アセチルアセトナート錯体が特に好ましい。金属原子を有する化合物の配合量は、特に限定されないが、全エポキシ樹脂組成物中０．０１〜３重量％が望ましく、より好ましくは０.０５〜１重量％である。 The compound having a metal atom used in the present invention can be used in any form, but is preferably used in the form of a complex compound. As the metal atom, Cu, Ni, Al, Co, Fe, Mn, and Zn are preferable, and Cu, Ni, Al, and Co are particularly preferable. Preferred complex compounds are acetylacetonate complexes, naphthenic acid complexes, salicylic acid complexes, ethylenediaminetetraacetic acid complexes, phthalocyanine complexes, naphthalocyanine complexes, hydroxyquinoline (oxine) complexes, phenanthroline complexes, bipyridine complexes, and thiocyanate complexes. Complexes are particularly preferred. Although the compounding quantity of the compound which has a metal atom is not specifically limited, 0.01-3 weight% is desirable in all the epoxy resin compositions, More preferably, it is 0.05-1 weight%.
本発明において用いられる硫黄原子を有する化合物はあらゆる形態で用いることが可能であるが、樹脂又は樹脂に溶解する形態で用いるのが好ましい。硫黄原子を有する化合物はメルカプト基または窒素原子いずれかを有すると好ましく、メルカプト基と窒素原子どちらも有すると特に好ましい。硫黄原子を有する化合物としては、例えば、主鎖にスルフィド結合やスルホン結合を有する樹脂、側鎖にメルカプト基やスルホン酸基等の硫黄原子含有官能基を有する樹脂、メルカプト基やスルフィド結合を有するカップリング剤、チアゾリン、ジアゾール、トリアゾール、トリアジン、ピリミジン等の複素環型化合物にメルカプト基やスルホン酸基等の硫黄原子含有官能基を有する化合物等が挙げられ、これらのうちメルカプトシランカップリング剤、メルカプト基と窒素原子を有する化合物が好ましい。硫黄原子を有する化合物の配合量は、特に限定されないが、全エポキシ樹脂組成物中０．０１〜３重量％が望ましく、より好ましくは０.０５〜１重量％である。 Although the compound which has a sulfur atom used in this invention can be used with all forms, it is preferable to use it with the form melt | dissolved in resin or resin. The compound having a sulfur atom preferably has either a mercapto group or a nitrogen atom, and particularly preferably has both a mercapto group and a nitrogen atom. Examples of the compound having a sulfur atom include a resin having a sulfide bond or a sulfone bond in the main chain, a resin having a sulfur atom-containing functional group such as a mercapto group or a sulfonic acid group in the side chain, a cup having a mercapto group or a sulfide bond. Examples of the ring-type compound include compounds having a sulfur atom-containing functional group such as a mercapto group or a sulfonic acid group in heterocyclic compounds such as thiazoline, diazole, triazole, triazine, and pyrimidine. Among these, a mercaptosilane coupling agent, mercapto, etc. Compounds having a group and a nitrogen atom are preferred. Although the compounding quantity of the compound which has a sulfur atom is not specifically limited, 0.01-3 weight% is desirable in all the epoxy resin compositions, More preferably, it is 0.05-1 weight%.
本発明において用いられる金属原子を有する化合物と硫黄原子を有する化合物は併用することによりその効果を発揮すると考えられる。その機構はよく分からないが、密着付与剤として硫黄原子を有する化合物を単独で使用するより、金属原子を有する化合物が存在すると触媒作用として働き、より密着強度が向上するのではないかと思われる。また硫黄原子を有する化合物は、特にメルカプト基を有すると常温でもエポキシ樹脂との反応を促進し、流動性が悪化してしまうが、金属原子を有する化合物が存在すると、それがメルカプト基をキャップし保存性低下を免れるという効果も有している。 The compound having a metal atom and the compound having a sulfur atom used in the present invention are considered to exhibit the effect when used in combination. Although the mechanism is not well understood, it seems that if a compound having a metal atom is present, it acts as a catalytic action and the adhesion strength is improved more than when a compound having a sulfur atom is used alone as an adhesion-imparting agent. In addition, a compound having a sulfur atom particularly has a mercapto group, which promotes the reaction with the epoxy resin even at room temperature and deteriorates the fluidity. However, when a compound having a metal atom is present, it caps the mercapto group. It also has the effect of avoiding deterioration in storage stability.
本発明のエポキシ樹脂組成物には必要に応じてシランカップリング剤が用いられる。シランカップリング剤としては、従来公知のものを用いることができるが、例えば、エポキシシラン、アミノシラン、アルキルシラン、ウレイドシラン、ビニルシラン等が挙げられ、これらを例示すると、γ−アミノプロピルトリエトキシシラン、γ−アミノプロピルトリメトキシシラン、Ｎ−β（アミノエチル）γ−アミノプロピルトリメトキシシラン、Ｎ−β（アミノエチル）γ−アミノプロピルメチルジメトキシシラン、Ｎ−フェニルγ−アミノプロピルトリエトキシシラン、Ｎ−フェニルγ−アミノプロピルトリメトキシシラン、Ｎ−β（アミノエチル）γ−アミノプロピルトリエトキシシラン、Ｎ−６−（アミノヘキシル）3−アミノプロピルトリメトキシシラン、Ｎ−（３−（トリメトキシシリルプロピル）−１，３−ベンゼンジメタナン、γ−グリシドキシプロピルトリエトキシシラン、γ−グリシドキシプロピルトリメトキシシラン、γ−グリシドキシプロピルメチルジメトキシシラン、β−（３，４エポキシシクロヘキシル）エチルトリメトキシシラン、メチルトリメトキシシランン、γ−ウレイドプロピルトリエトキシシラン、ビニルトリエトキシシランなどが挙げられ、これらは１種類単独でも２種以上併用しても構わない。これらのうち２級アミノシランが好ましく特にアニリノシランが好ましい。シランカップリング剤の配合量は、特に限定されないが、全エポキシ樹脂組成物中０．０１〜１重量％が望ましく、より好ましくは０.０５〜０．８重量％である。上記の下限値を下回ると期待するような粘度特性及び流動特性が得られない可能性があり、上限値を超えると硬化性が低下する可能性がある。また、これらシランカップリング剤は、予め水或いは必要に応じて酸又はアルカリを添加して、加水分解処理して用いてもよく、また予め無機充填材に処理されていてもよい。 A silane coupling agent is used in the epoxy resin composition of the present invention as necessary. As the silane coupling agent, conventionally known silane coupling agents can be used, and examples thereof include epoxy silane, amino silane, alkyl silane, ureido silane, vinyl silane, and the like. Examples of these include γ-aminopropyltriethoxy silane, γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldimethoxysilane, N-phenylγ-aminopropyltriethoxysilane, N -Phenyl γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-6- (aminohexyl) 3 -aminopropyltrimethoxysilane, N- (3- (trimethoxysilyl) Propyl) -1,3-benzenedimethana , Γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, β- (3,4 epoxycyclohexyl) ethyltrimethoxysilane, methyltrimethoxysilane , Γ-ureidopropyltriethoxysilane, vinyltriethoxysilane, etc., and these may be used alone or in combination of two or more, among which secondary aminosilane is preferable, and anilinosilane is particularly preferable. The blending amount of the agent is not particularly limited, but is preferably 0.01 to 1% by weight in the total epoxy resin composition, more preferably 0.05 to 0.8% by weight. The viscosity and flow characteristics may not be obtained, and the upper limit is exceeded. These silane coupling agents may be used by hydrolyzing them with water or acid or alkali as necessary in advance, or with inorganic fillers in advance. May be processed.
本発明のエポキシ樹脂組成物には必要に応じて離型剤が用いられる。離型剤としては、従来公知のものを用いることができるが、例えば、高級脂肪酸、高級脂肪酸金属塩、エステル系ワックス、ポリエチレン系ワックス等が挙げられ、これらは１種類単独でも２種以上併用しても構わない。これらのうちポリエチレン系ワックスが好ましく、ポリエチレン系ワックスとモンタン酸エステル系ワックスを併用した方がより好ましい。
離型剤の配合量は特に制限されないが、全エポキシ樹脂組成物中０．０５〜３重量％が望ましく、より好ましくは０.１〜１重量％である。
A release agent is used in the epoxy resin composition of the present invention as necessary. As the release agent, conventionally known ones can be used, and examples thereof include higher fatty acids, higher fatty acid metal salts, ester waxes, polyethylene waxes, and the like. These may be used alone or in combination of two or more. It doesn't matter. Of these, polyethylene waxes are preferable, and it is more preferable to use polyethylene wax and montanic acid ester wax in combination.
Although the compounding quantity of a mold release agent is not restrict | limited in particular, 0.05 to 3 weight% is desirable in all the epoxy resin compositions, More preferably, it is 0.1 to 1 weight%.
本発明のエポキシ樹脂組成物には必要に応じてイオントラップ剤が用いられる。イオントラップ剤としては従来公知のものを用いることができるが、例えば、ハイドロタルサイト類やマグネシウム、アルミニウム、ビスマス、チタン、ジルコニウムから選ばれる元素の含水酸化物等が挙げられ、これらは１種類単独でも２種以上併用しても構わない。これらのうちハイドロタルサイト類が好ましい。
イオントラップ剤の配合量は特に制限されないが、全エポキシ樹脂組成物中０．０５〜３重量％が望ましく、より好ましくは０.１〜１重量％である。
An ion trap agent is used in the epoxy resin composition of the present invention as necessary. As the ion trapping agent, conventionally known ones can be used. Examples thereof include hydrotalcites and hydrated oxides of elements selected from magnesium, aluminum, bismuth, titanium, and zirconium. However, you may use together 2 or more types. Of these, hydrotalcites are preferred.
Although the compounding quantity of an ion trap agent is not restrict | limited in particular, 0.05 to 3 weight% is desirable in all the epoxy resin compositions, More preferably, it is 0.1 to 1 weight%.
本発明のエポキシ樹脂組成物は、エポキシ樹脂、フェノール樹脂、無機充填材、硬化促進剤、金属原子を有する化合物、硫黄原子を有する化合物が必須であり、更に必要に応じて、シランカップリング剤、離型剤、イオントラップ剤を用いるが、これ以外に、チタネートカップリング剤、アルミニウムカップリング剤、アルミニウム／ジルコニウムカップリング剤等のシランカップリング剤以外のカップリング剤、カーボンブラック等の着色剤、シリコーンオイル、ゴム等の低応力添加剤、臭素化エポキシ樹脂や三酸化アンチモン、水酸化アルミニウム、水酸化マグネシウム、ほう酸亜鉛、モリブデン酸亜鉛、フォスファゼン等の難燃剤等の添加剤を適宜配合しても差し支えない。 In the epoxy resin composition of the present invention, an epoxy resin, a phenol resin, an inorganic filler, a curing accelerator, a compound having a metal atom, a compound having a sulfur atom are essential, and if necessary, a silane coupling agent, A mold release agent and an ion trap agent are used, but besides this, a titanate coupling agent, an aluminum coupling agent, a coupling agent other than a silane coupling agent such as an aluminum / zirconium coupling agent, a colorant such as carbon black, Low stress additives such as silicone oil and rubber, and additives such as brominated epoxy resins and antimony trioxide, aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, phosphazene, etc. There is no problem.
また、本発明のエポキシ樹脂組成物は、ミキサー等を用いて原料を充分に均一に混合した後、更に熱ロール又はニーダー等で溶融混練し、冷却後粉砕して得られる。
本発明のエポキシ樹脂組成物を用いて、半導体素子等の各種の電子部品を封止し、半導体装置を製造するには、トランスファーモールド、コンプレッションモールド、インジェクションモールド等の従来からの成形方法で硬化成型すればよい。
The epoxy resin composition of the present invention can be obtained by mixing the raw materials sufficiently uniformly using a mixer or the like, then melt-kneading with a hot roll or a kneader, cooling and pulverizing.
The epoxy resin composition of the present invention is used to encapsulate various electronic components such as semiconductor elements and to manufacture a semiconductor device by a conventional molding method such as transfer molding, compression molding, injection molding, etc. do it.
以下に本発明の実施例を示すが、本発明はこれらに限定されるものではない。配合割合は重量部とする。 Examples of the present invention are shown below, but the present invention is not limited thereto. The blending ratio is parts by weight.
実施例１
エポキシ樹脂１：下記式（３）で表されるビフェニレン骨格を有するフェノールアラルキル型エポキシ樹脂（日本化薬（株）製、商品名ＮＣ３０００Ｐ、軟化点５８℃、エポキシ当量２７３） ６５重量部
Epoxy resin 1: phenol aralkyl type epoxy resin having a biphenylene skeleton represented by the following formula (3) (manufactured by Nippon Kayaku Co., Ltd., trade name: NC3000P, softening point: 58 ° C., epoxy equivalent: 273) 65 parts by weight
フェノール樹脂１：下記式（４）で表されるビフェニレン骨格を有するフェノールアラルキル樹脂（明和化成（株）製、商品名ＭＥＨ−７８５１ＳＳ、軟化点１０７℃、水酸基当量２０４） ３８重量部
溶融球状シリカ１：（平均粒径２８μｍ、比表面積２．４ｍ2／ｇ） ７８０重量部
溶融球状シリカ２：（平均粒径０．５μｍ、比表面積６．０ｍ2／ｇ）
１００重量部
硬化促進剤１：トリフェニルホスフィンと１，４−ベンゾキノンとの付加物
３重量部
金属原子を有する化合物１：銅アセチルアセトナート（関東化学（株）製、試薬）
２重量部
硫黄原子を有する化合物１：γ−メルカプトプロピルトリメトキシシラン（信越化学（株）製、商品名ＫＢＭ−８０３） ２重量部
カップリング剤：Ｎ−フェニルγ−アミノプロピルトリメトキシシラン（信越化学（株）製、商品名ＫＢＭ−５７３） ２重量部
離型剤１：ポリエチレン系ワックス（クラリアントジャパン（株）製、商品名ＰＥＤ−１９１） ２重量部
離型剤２：モンタン酸エステル系ワックス（クラリアントジャパン（株）製、商品名リコルブＷＥ−４） １重量部
イオントラップ剤：ハイドロタルサイト（協和化学工業（株）製、商品名ＤＨＴ−４Ａ） ２重量部
カーボンブラック：（三菱化学（株）製、商品名ＭＡ−６００） ３重量部
をミキサーにて混合し、熱ロールを用いて、９５℃で８分間混練して冷却後粉砕し、エポキシ樹脂組成物を得た。得られたエポキシ樹脂組成物を、以下の方法で評価した。結果を表１に示す。
Fused spherical silica 1: (average particle size 28 μm, specific surface area 2.4 m 2 / g) 780 parts by weight Fused spherical silica 2: (average particle size 0.5 μm, specific surface area 6.0 m 2 / g)
100 parts by weight Curing accelerator 1: Adduct of triphenylphosphine and 1,4-benzoquinone
3 parts by weight Compound 1 having a metal atom 1: Copper acetylacetonate (manufactured by Kanto Chemical Co., Inc., reagent)
2 parts by weight Compound having a sulfur atom 1: γ-mercaptopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name KBM-803) 2 parts by weight Coupling agent: N-phenyl γ-aminopropyltrimethoxysilane (Shin-Etsu) Chemical Co., Ltd., trade name KBM-573) 2 parts by weight Release agent 1: Polyethylene wax (Clariant Japan, trade name PED-191) 2 parts by weight Release agent 2: Montanate ester wax (Clariant Japan Co., Ltd., trade name Recolve WE-4) 1 part by weight Ion trap agent: Hydrotalcite (Kyowa Chemical Industry Co., Ltd., trade name DHT-4A) 2 parts by weight Carbon black: (Mitsubishi Chemical ( Co., Ltd., trade name: MA-600) 3 parts by weight are mixed in a mixer, kneaded at 95 ° C. for 8 minutes using a hot roll, cooled and ground. An epoxy resin composition was obtained. The obtained epoxy resin composition was evaluated by the following methods. The results are shown in Table 1.
評価方法
スパイラルフロー：ＥＭＭＩ−１−６６に準じたスパイラルフロー測定用金型を用いて、金型温度１７５℃、圧力６．９ＭＰa、硬化時間１２０秒で測定した。単位はｃｍ。
Evaluation method Spiral flow: Using a spiral flow measurement mold according to EMMI-1-66, measurement was performed at a mold temperature of 175 ° C., a pressure of 6.9 MPa, and a curing time of 120 seconds. The unit is cm.
スパイラルフロー保存性：エポキシ樹脂組成物を２５℃で１週間保存後にスパイラルフロー測定した。単位はｃｍ。 Spiral flow storage stability: Spiral flow was measured after the epoxy resin composition was stored at 25 ° C. for 1 week. The unit is cm.
硬化性:キュラストメーター（オリエンテック（株）製、ＪＳＲキュラストメーターIVＰＳ型）を用い、１７５℃、６０秒後のトルク値を３００秒後のトルク値で除した値で示した。この値の大きい方が硬化性は良好である。 Curability: Using a curast meter (manufactured by Orientec Co., Ltd., JSR curast meter IVPS type), the torque value after 60 seconds at 175 ° C. was divided by the torque value after 300 seconds. The larger this value, the better the curability.
密着強度：トランスファー成形機を用いて、金型温度１７５℃、注入圧力９．８ＭＰａ、硬化時間１２０秒の条件で、リードフレーム上に２ｍｍ×２ｍｍ×２ｍｍの密着強度試験片を成形した。リードフレームには銅フレームに銀メッキしたもの（フレーム１）とＮｉＰｄ合金フレームに金メッキしたもの（フレーム２）の２種類を用いた。その後、自動せん断強度測定装置（ＤＡＧＥ社製、ＰＣ２４００）を用いて、エポキシ樹脂組成物の硬化物とフレームとのせん断強度を測定した。単位はＮ／ｍｍ2。 Adhesion strength: Using a transfer molding machine, a 2 mm × 2 mm × 2 mm adhesion strength test piece was molded on a lead frame under conditions of a mold temperature of 175 ° C., an injection pressure of 9.8 MPa, and a curing time of 120 seconds. Two types of lead frames were used: a silver plated copper frame (frame 1) and a gold plated NiPd alloy frame (frame 2). Thereafter, the shear strength between the cured product of the epoxy resin composition and the frame was measured using an automatic shear strength measuring apparatus (manufactured by DAGE, PC2400). The unit is N / mm 2 .
耐半田性：低圧トランスファー成形機を用いて、成形温度１７５℃、圧力８．３ＭＰａ、硬化時間１２０秒で、８０ｐＱＦＰ（ＮｉＰｄ合金フレームに金メッキしたフレーム、チップサイズ６．０ｍｍ×６．０ｍｍ）を成形し、アフターベークとして１７５℃、８時間加熱処理した後、８５℃、相対湿度８５％で４８時間の加湿処理を行った後、２６０℃のＩＲリフロー処理をした。パッケージ内部の剥離とクラックを超音波探傷機で確認した。１０個のパッケージ中の不良パッケージ数を示す。 Solder resistance: Molding 80pQFP (NiPd alloy frame gold-plated, chip size 6.0mm x 6.0mm) at a molding temperature of 175 ° C, a pressure of 8.3MPa, and a curing time of 120 seconds using a low-pressure transfer molding machine. Then, after heat treatment at 175 ° C. for 8 hours as an after bake, a humidification treatment was performed at 85 ° C. and a relative humidity of 85% for 48 hours, followed by an IR reflow treatment at 260 ° C. Peeling and cracks inside the package were confirmed with an ultrasonic flaw detector. The number of defective packages among the 10 packages is shown.
実施例３〜８、参考例２、９、比較例１〜２
表１の配合に従い、実施例１と同様にしてエポキシ樹脂組成物を得て、実施例１と同様にして評価した。結果を表１に示す。
実施例１以外で用いた原材料を以下に示す。
エポキシ樹脂２：ビフェニル型エポキシ樹脂（ジャパンエポキシレジン（株）製、商品名ＹＸ−４０００、エポキシ当量１９０、融点１０５℃）
According to the composition of Table 1, an epoxy resin composition was obtained in the same manner as in Example 1 and evaluated in the same manner as in Example 1. The results are shown in Table 1.
The raw materials used other than Example 1 are shown below.
Epoxy resin 2: biphenyl type epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., trade name YX-4000, epoxy equivalent 190, melting point 105 ° C.)
フェノール樹脂２：フェノールアラルキル樹脂（三井化学（株）製、商品名ＸＬＣ−ＬＬ、水酸基当量１６５、軟化点７９℃）
硬化促進剤２：トリフェニルホスフィン（ケイ・アイ化成（株）製、商品名ＰＰ−３６０）
金属原子を有する化合物２：ニッケルアセチルアセトナート（関東化学（株）製、試薬）
金属原子を有する化合物３：オキシン銅（関東化学（株）製、試薬）
硫黄原子を有する化合物２：５−メルカプト−１，２，４−トリアゾール（関東化学（株）製、試薬）
Curing accelerator 2: Triphenylphosphine (manufactured by Kay Kasei Co., Ltd., trade name PP-360)
Compound 2 having metal atom: nickel acetylacetonate (manufactured by Kanto Chemical Co., Inc., reagent)
Compound 3 having metal atom: Oxin copper (manufactured by Kanto Chemical Co., Inc., reagent)
Compound 2 having sulfur atom: 5-mercapto-1,2,4-triazole (manufactured by Kanto Chemical Co., Inc., reagent)
本発明に従うと、半導体素子等の封止成形時において良好な流動性、硬化性、流動保存性を有し、かつ無鉛半田に対応する高温の半田処理によってもクラックが発生しない良好な耐半田性を有する半導体封止用エポキシ樹脂組成物が得られるので、特に表面実装型の半導体装置の製造用として好適に用いることができる。 According to the present invention, it has good fluidity, curability, fluidity storage stability at the time of sealing molding of semiconductor elements, etc., and good solder resistance that does not generate cracks even by high-temperature solder processing corresponding to lead-free solder Since the epoxy resin composition for semiconductor sealing which has this is obtained, it can be used suitably especially for manufacture of a surface-mount type semiconductor device.
Claims (9)
Wherein a obtained by encapsulating a semiconductor element using the epoxy resin composition for semiconductor encapsulation according to any one of claims 1 to 8.
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| JP4950770B2 (en) | 2006-09-21 | 2012-06-13 | 日東電工株式会社 | Epoxy resin composition for optical semiconductor encapsulation, cured product thereof, and optical semiconductor device using the same |
| JP5257643B2 (en) * | 2006-09-27 | 2013-08-07 | 日立化成株式会社 | Epoxy resin composition and electronic component device |
| KR100814706B1 (en) | 2006-12-31 | 2008-03-18 | 제일모직주식회사 | Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same |
| JP5298310B2 (en) * | 2008-07-10 | 2013-09-25 | 日立化成株式会社 | Resin composition for sealing electronic components and electronic component device using the same |
| KR102422919B1 (en) * | 2018-04-13 | 2022-07-20 | 쇼와덴코머티리얼즈가부시끼가이샤 | compound and molded body |
| CN112724603A (en) * | 2020-12-29 | 2021-04-30 | 江苏科化新材料科技有限公司 | High-reliability epoxy plastic package material for semiconductor packaging |
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| JPS6128519A (en) * | 1984-07-18 | 1986-02-08 | Toyota Central Res & Dev Lab Inc | Epoxy resin composition |
| JPS6123622A (en) * | 1984-07-12 | 1986-02-01 | Toyota Central Res & Dev Lab Inc | Epoxy resin composition |
| JPS61195152A (en) * | 1985-02-25 | 1986-08-29 | Toyota Central Res & Dev Lab Inc | Epoxy resin composition |
| JPS61200155A (en) * | 1985-02-28 | 1986-09-04 | Toyota Central Res & Dev Lab Inc | Epoxy resin composition |
| JPH09124904A (en) * | 1995-10-30 | 1997-05-13 | Sumitomo Bakelite Co Ltd | Resin composition for semiconductor sealing |
| JP3388538B2 (en) * | 1998-06-29 | 2003-03-24 | 信越化学工業株式会社 | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
| JP2001031840A (en) * | 1999-07-21 | 2001-02-06 | Hitachi Chem Co Ltd | Epoxy resin composition for sealing semiconductor and semiconductor device |
| JP2001081287A (en) * | 1999-09-17 | 2001-03-27 | Hitachi Chem Co Ltd | Epoxy resin composition for sealing semiconductor and resin-sealed type semiconductor device |
| JP3632558B2 (en) * | 1999-09-17 | 2005-03-23 | 日立化成工業株式会社 | Epoxy resin composition for sealing and electronic component device |
| JP3656515B2 (en) * | 2000-04-24 | 2005-06-08 | 日立化成工業株式会社 | Epoxy resin composition for sealing and electronic component device |
| JP3656516B2 (en) * | 2000-04-24 | 2005-06-08 | 日立化成工業株式会社 | Epoxy resin composition for sealing and electronic component device |
| JP2001329143A (en) * | 2000-05-22 | 2001-11-27 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2003147053A (en) * | 2001-11-14 | 2003-05-21 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2003212958A (en) * | 2002-01-18 | 2003-07-30 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP3972187B2 (en) * | 2002-03-28 | 2007-09-05 | 信越化学工業株式会社 | Epoxy resin composition for semiconductor encapsulation |
| JP2004018721A (en) * | 2002-06-18 | 2004-01-22 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2004035781A (en) * | 2002-07-04 | 2004-02-05 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2004140186A (en) * | 2002-10-17 | 2004-05-13 | Toray Ind Inc | Method of manufacturing semiconductor device |
| JP4014488B2 (en) * | 2002-10-28 | 2007-11-28 | 住友ベークライト株式会社 | Epoxy resin composition and semiconductor device |
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| JP4296820B2 (en) * | 2003-03-31 | 2009-07-15 | 住友ベークライト株式会社 | Epoxy resin composition and semiconductor device |
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