JPH11116775A - Epoxy resin composition for semiconductor sealing and production thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a compsn. excellent in low-stress properties, thermal conductivity, and flowability in molding by compounding an epoxy resin, a phenol resin, an alumina powder, a spherical fused silica powder, and a particulate butadiene rubber. SOLUTION: The content of the alumina powder is set pref. at 50-90 vol.% of the sum of contents of the alumina powder and the spherical fused silica powder, and the sum of contents of both the powders is set pref. at 85 wt.% or higher of the compsn. Further incorporation of a silane coupling agent is pref. The compsn. is prepd. by melt mixing at least a part of the phenol resin with at least a part of the particulate butadiene rubber (and at least a part of the silane coupling agent) and then with the rest including the epoxy resin, the alumina powder, the spherical fused silica, and other additives.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation having excellent thermal conductivity, fluidity and low stress, and a method for producing the same.

[0002]

2. Description of the Related Art Semiconductor devices such as transistors and ICs are
From the viewpoint of enabling protection from an external environment and soldering of elements, semiconductor devices are sealed with a ceramic package or a plastic package. In the above ceramic package, the constituent material itself is excellent in moisture resistance, and the stress applied to the semiconductor element can be ignored because of the hollow package. For this reason, highly reliable sealing is possible, but there is a problem that the constituent material is expensive and mass productivity is poor.

[0003] For these reasons, plastic packages using an epoxy resin composition have recently become mainstream. In resin sealing with this epoxy resin composition,
Although it is excellent in mass productivity and can be manufactured at low cost, it has a large linear expansion coefficient as compared with a semiconductor element, so that improvement of low stress property has been a major issue. In order to solve such a problem, for example, a large amount of silica powder has been blended as an inorganic filler into the epoxy resin composition.

[0004]

However, the epoxy resin composition using the above-mentioned silica powder as an inorganic filler has a drawback that it has low thermal conductivity and is inferior in heat dissipation. In addition, the epoxy resin composition itself has a drawback that the fluidity of the epoxy resin composition itself is lowered and the moldability is inferior.

The present invention has been made in view of such circumstances, and an object of the present invention is to provide an epoxy resin composition for semiconductor encapsulation having excellent low stress, thermal conductivity, and excellent flowability during molding, and a method for producing the same. And

[0006]

In order to achieve the above object, the present invention provides, as a first gist, an epoxy resin composition for semiconductor encapsulation containing the following components (A) to (E). (A) Epoxy resin. (B) a phenolic resin. (C) alumina powder. (D) spherical fused silica powder. (E) Butadiene rubber particles.

In order to obtain such an epoxy resin composition for encapsulating a semiconductor, the present invention provides the following (A) to (E)
A method for producing an epoxy resin composition for semiconductor encapsulation containing a component, wherein at least a part of the following component (B) is preliminarily blended with at least a part of the component (E) and melt-mixed. A second aspect of the present invention is a method for producing an epoxy resin composition for semiconductor encapsulation in which the remaining components including the following components (A), (C), and (D) are blended and melt-mixed. (A) Epoxy resin. (B) a phenolic resin. (C) alumina powder. (D) spherical fused silica powder. (E) Butadiene rubber particles.

That is, the present inventors have conducted a series of studies to obtain an epoxy resin composition for semiconductor encapsulation having excellent heat conductivity and fluidity. As a result, as before,
Rather than using only silica powder as an inorganic filler, together with alumina powder and using spherical fused silica powder as silica powder, epoxy resin composition with good thermal conductivity and excellent fluidity can be obtained. I figured out what I could get. In addition, by blending butadiene rubber particles, low stress can be improved in addition to the above characteristics.

The above alumina powder [(C) component]
Is 50 to 90% by volume (= 65 to 95% by weight) in the total amount of the components (C) and (D), which are fillers.
By setting the specific amount in the range described above, a more excellent epoxy resin composition for semiconductor encapsulation in which both good thermal conductivity and fluidity are balanced can be obtained.

Further, by using a silane coupling agent in addition to the above components (A) to (E), excellent moisture resistance can be obtained, and a biphenyl type epoxy resin can be used as the epoxy resin [component (A)]. By using at least one of a resin and a cresol novolak type epoxy resin, an epoxy resin composition for semiconductor encapsulation having excellent reaction curability and exhibiting good moldability is obtained.

When producing such an epoxy resin composition for semiconductor encapsulation, for example, the above (A) to (A)
When the component (E) was simultaneously compounded and mixed, the epoxy resin composition in which the butadiene rubber particles [component (E)] formed secondary aggregates and were uniformly dispersed could not be obtained. For these reasons, the present inventors have further studied to obtain an epoxy resin composition in which a filler component and a butadiene rubber are uniformly dispersed. As a result, at least a portion of the phenolic resin [component (B)] and at least a portion of the butadiene rubber [component (E)] are previously mixed and melt-mixed. Then, the epoxy resin [ When the remaining components including the (A) component], the alumina powder [(C) component], and the spherical fused silica powder [(D) component] are blended and melt-mixed, the butadiene-based rubber particles undergo secondary aggregation as described above. The present inventors have found that a uniformly dispersed epoxy resin composition can be obtained without forming a product, and have reached the present invention.

[0012]

Next, embodiments of the present invention will be described in detail.

The epoxy resin composition for semiconductor encapsulation of the present invention comprises an epoxy resin (A component), a phenol resin (B component), an alumina powder (C component), a spherical fused silica powder (D component), It is obtained by using butadiene rubber particles (component E) and is usually in the form of a powder or a tablet obtained by compressing the powder.

The epoxy resin (component A) is not particularly limited, and various epoxy resins can be used. For example, cresol novolak type epoxy resin, phenol novolak type epoxy resin, bisphenol type epoxy resin, biphenyl type epoxy resin and the like can be mentioned. Among these epoxy resins, those having a melting point exceeding room temperature and showing a solid state at room temperature are particularly preferably used. Among them, a biphenyl type epoxy resin and a cresol novolak type epoxy resin are particularly preferably used from the viewpoint of improving and stabilizing the reaction curability in order to improve molding workability.

The biphenyl type epoxy resin includes:
A compound represented by the following general formula (1) is given.

[0016]

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Of the —H (hydrogen) or C 1 -C 4 alkyl groups represented by R ₁ -R ₄ in the general formula (1), the C ₁ -C 4 alkyl groups include Examples thereof include a linear or branched lower alkyl group such as a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group. R _{1 to} R ₄ may be the same or different from each other. Above all, R
It is particularly preferable to use a biphenyl type epoxy resin having a structure represented by the following formula (2) wherein all of _{1 to} R ₄ are methyl groups.

[0018]

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As the cresol novolak type epoxy resin, those having an epoxy equivalent of 100 to 250 and a softening point of 50 to 150 ° C. are preferably used.

The phenol resin (component B) used together with the epoxy resin (component A) acts as a curing agent for the epoxy resin (component A), and is not particularly limited. Phenol novolak and cresol novolak are used. And the like. These phenolic resins have a hydroxyl equivalent of 70-200 and a softening point of 50-1.
It is preferable to use one at 10 ° C.

The mixing ratio of the epoxy resin (component A) and the phenol resin (component B) is such that the hydroxyl equivalent in the phenol resin is 0.5 to 2.0 equivalent per equivalent of epoxy group in the epoxy resin. It is preferable to mix them. It is more preferably 0.8 to 1.2 equivalents.

The alumina powder (component C) used together with the above-mentioned components A and B has an average particle size of 0.1 from the viewpoint of preventing the deterioration of the filling properties and the flow characteristics of the obtained resin composition and the reactivity. It is preferable to use one having a spherical shape of ² to 60 μm and a specific surface area of 0.7 to 50 m ² / g.

The spherical fused silica powder (component (D)) used together with the above components (A) to (C) has an average particle diameter of 1 from the viewpoints of preventing a decrease in flow characteristics, preventing burrs, and preventing gate clogging. It is preferably from 0.5 to 70 μm, more preferably from 2 to 50 μm spherical fused silica powder.

In the alumina powder (component C) and the spherical fused silica powder (component D) serving as the inorganic filler component, the content ratio of the alumina powder (component C) is as follows:
Alumina powder (component C) and spherical fused silica powder (D
The content is preferably set to 50 to 90% by volume, more preferably 70 to 80% by volume, based on the total amount of the components). That is, when the content ratio of the alumina powder (component C) is less than 50% by volume in the total amount of the alumina powder (component C) and the spherical fused silica powder (component D), the amount of the alumina powder is too small, and the desired heat content is too small. The conductive effect could not be obtained and 9
If the content exceeds 0% by volume, desired flow characteristics are hardly obtained, the molding workability is poor, and the linear expansion coefficient tends to be not lowered. The content ratio of the alumina powder (component C) is 50 to 9 in the total amount of the alumina powder (component C) and the spherical fused silica powder (component D).
When converted to weight, the content ratio of alumina powder (component C) is 65 to 95% in the total amount of alumina powder (component C) and spherical fused silica powder (component D).
% By weight.

Further, the total amount (total inorganic filler amount) of the alumina powder (component C) and the spherical fused silica powder (component D) is 85% in the whole epoxy resin composition for semiconductor encapsulation.
It is preferably set to be not less than 85% by weight, more preferably 85 to 95% by weight. That is, the above C
When the total amount of the component and the D component is less than 85% by weight, the resin strength tends to be insufficient, and the coefficient of linear expansion tends to be large, which tends to be disadvantageous in terms of stress. In addition, the solder resistance is reduced, and it becomes difficult to obtain a desired effect of thermal conductivity. Conversely, if the content exceeds 95% by weight, the flow characteristics cannot be obtained, and a tendency to show a decrease in the molding margin is observed.

The butadiene rubber particles (component E) used together with the above components A to D are alkyl methacrylate,
Those obtained by a copolymerization reaction of alkyl acrylate, butadiene, styrene and the like are used. Preferably, a methyl methacrylate-butadiene-styrene copolymer is used, and one having a butadiene composition ratio of 70% by weight or less and a methyl methacrylate composition ratio of 15% by weight or more is preferable. Further, as the butadiene rubber particles, methyl acrylate-butadiene-styrene copolymer, methyl acrylate-butadiene-vinyltoluene copolymer, butadiene-styrene copolymer, methyl methacrylate-butadiene-vinyltoluene copolymer And butadiene-vinyltoluene copolymer.

The butadiene rubber particles preferably have a core-shell structure. The butadiene-based rubber particles having the core-shell structure are such that a core portion as a core is formed of particles made of butadiene-based rubber, and a shell portion made of a polymer resin is formed on the outer surface of the core so as to cover the core. (Outer layer). Examples of butadiene-based rubbers that are the core forming materials include styrene-butadiene copolymer latex and acrylonitrile-butadiene copolymer latex. Examples of the polymer resin that forms the outer layer covering the core include a polymer resin having a glass transition temperature of 70 ° C. or higher, and this polymer resin has an unsaturated double bond. Obtained by polymerization of a saturated monomer. As the unsaturated monomer, methyl methacrylate,
Acrylonitrile, styrene and the like can be mentioned. Butadiene rubber particles having such a core-shell structure,
For example, it can be obtained by an aqueous medium polymerization method. More specifically, butadiene-based rubber particles serving as a nucleus are prepared by mixing and polymerizing butadiene-based rubbers as the core-forming material and water. Next, in this aqueous medium, an unsaturated monomer to be a material for forming the outer layer is added to polymerize the unsaturated monomer on the surface of the butadiene rubber as the nucleus. Butadiene rubber particles having a core-shell structure can be obtained by laminating them on the outer peripheral surface. As the butadiene rubber particles having such a core-shell structure, those having a core (core) portion made of a styrene-butadiene copolymer and a shell portion made of methyl methacrylate are particularly preferable. It is preferable that the composition ratio of butadiene is 70% or less and the composition ratio of methyl methacrylate is 15% or more.

The compounding amount of the butadiene rubber particles (component E) is 0.1% of the entire epoxy resin composition for semiconductor encapsulation.
It is preferably set to a ratio of 5 to 5% by weight, more preferably 0.1 to 2% by weight. That is, if it is less than 0.1% by weight, a sufficient effect of lowering the stress of the epoxy resin composition cannot be obtained, and if it exceeds 5% by weight, viscosity tends to increase and molding workability tends to decrease. .

In the epoxy resin composition for encapsulating a semiconductor of the present invention, a silane coupling agent may be further used in addition to the above components A to E. By using this silane coupling agent, effects of improving the adhesiveness between the semiconductor element and the sealing resin, improving the adhesiveness with the lead frame, and improving the resin strength are obtained, which is more preferable. Examples of the silane coupling agent include amino silane coupling agents such as N-β (aminoethyl) γ-aminopropylmethyldimethoxysilane, and epoxy silane coupling agents such as γ-glycidoxypropyltrimethoxysilane. And mercapto silane coupling agents such as γ-mercaptopropyltrimethoxysilane. The blending amount of the silane coupling agent is preferably set in the range of 0.1 to 1% by weight, more preferably 0.2 to 0.5% by weight, based on the entire epoxy resin composition for semiconductor encapsulation. . That is, if it is less than 0.1% by weight, the effect of improving the adhesive strength is poor, and if it exceeds 1% by weight, the viscosity tends to increase, and a gelation tends to occur.

Further, if necessary, other additives such as a curing accelerator, a flame retardant, a flame retardant aid, and a pigment such as carbon black may be appropriately added to the above-mentioned components A to E and the silane coupling agent. Can be used.

Examples of the curing accelerator include amine-based and phosphorus-based curing accelerators. Examples of the amine-based curing accelerator include imidazoles such as 2-methylimidazole, triethanolamine and diazabicycloundecene. And tertiary amines. Examples of the phosphorus-based curing accelerator include triphenylphosphine. These may be used alone or in combination of two or more. And
The compounding ratio of the curing accelerator is preferably set to 0.05 to 0.5% by weight of the whole epoxy resin composition, and particularly preferably 0.1% in view of the fluidity of the epoxy resin composition. Between 0.5 and 0.3% by weight.

Examples of the flame retardant include halogen-based flame retardants such as brominated epoxy resins, and examples of the flame retardant aid include antimony trioxide.

In the epoxy resin composition for semiconductor encapsulation of the present invention, in consideration of high thermal conductivity, high fluidity and high reliability, the following combinations are particularly preferable for each component. preferable. That is, o-cresol novolak type epoxy resin is used as epoxy resin (component A), phenol novolak resin is used as phenol resin (component B), phenol novolak resin is used as alumina powder (component C), and spherical alumina powder having an average particle diameter of 20 to 30 μm is used. Are used as spherical fused silica powder (component D), spherical fused silica powder having an average particle diameter of 5 to 20 μm, and butadiene-based rubber particles (component E) using methyl methacrylate-butadiene-styrene copolymer, respectively. The combination using γ-mercaptopropyltrimethoxysilane as a silane coupling agent and a curing accelerator, a flame retardant, antimony trioxide, and carbon black as other additives is described above. Particularly suitable for that reason.

The epoxy resin composition for semiconductor encapsulation of the present invention can be obtained, for example, as follows. That is, part or all of the butadiene-based rubber particles (component E) is previously charged into a kneading machine such as a mixing roll machine with a part or all of the phenol resin (component B) and melted and mixed in a heated state. Next, the epoxy resin (component A), alumina powder (component C), spherical fused silica powder (component D), and all of the remaining components including other additives are blended and melt-mixed with the molten mixture. After cooling this to room temperature, it can be obtained by pulverizing by a known means and tableting as required.

When a silane coupling agent is blended in addition to the above components, a part or all of the phenolic resin (component B), a part or all of the butadiene rubber particles (component E), A part or all of the coupling agent is put into a kneader such as a mixing roll machine and melted and mixed in a heated state. Next, the epoxy resin (component A), alumina powder (component C), spherical fused silica powder (component D), and all of the remaining components including other additives are blended and melt-mixed with the molten mixture. After cooling this to room temperature, it is pulverized by a known means, and tableted as necessary to obtain an epoxy resin composition for semiconductor encapsulation.

In the manufacturing process of the epoxy resin composition for semiconductor encapsulation, a part or all of butadiene rubber particles (component E) are previously mixed with a part or all of phenol resin (component B) to prepare a molten mixture. In the manufacturing process, the preferred use amount of the phenol resin (component B) and butadiene-based rubber particles (component E) is 50 to 100% by weight of the total amount of the phenol resin (component B). The butadiene-based rubber particles (component E) are preferably set to 100% by weight of the total compounding amount. At the same time, when a part or all of the silane coupling agent is blended, a preferable usage amount is preferably set to 100% by weight of the total blended amount of the silane coupling agent.

In the above-mentioned production process, part or all of the butadiene rubber particles (component E) is melt-mixed in advance with part or all of the phenol resin (component B). The remaining components including (A component), alumina powder (C component) and spherical fused silica powder (D component) are sometimes blended.
When the butadiene rubber particles are preliminarily melt-mixed with the phenol resin in addition to the above-mentioned components A, C and D and other additives, when the used amount of the phenol resin is a part of the total used amount, Containing the remaining phenolic resin,
When the used amount of the butadiene-based rubber particles is a part of the total used amount, it includes the remaining butadiene-based rubber particles. Further, when a part or all of the silane coupling agent is melt-mixed with the butadiene-based rubber particles (component E) in advance, if the used amount of the silane coupling agent is a part of the total used amount, Contains the remaining phenolic resin, the remaining butadiene-based rubber, and the remaining silane coupling agent.

In the epoxy resin composition for semiconductor encapsulation obtained through such a production process, the above-mentioned butadiene rubber particles (component E) do not form secondary aggregates, but are uniformly dispersed in the system. The resulting epoxy resin composition is obtained.

The encapsulation of a semiconductor element using such an epoxy resin composition is not particularly limited, and can be performed by a known molding method such as ordinary transfer molding.

Next, examples will be described together with comparative examples.

The following components were prepared. [Epoxy resin a1] Biphenyl type epoxy resin represented by the following structural formula (3)

[0042]

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[Epoxy resin a2] Cresol novolak type epoxy resin (epoxy equivalent 200, softening point 85
℃)

[Phenol resin b] Phenol novolak resin (hydroxyl equivalent 105, softening point 85 ° C)

[Alumina powder] Spherical alumina powder having an average particle diameter of 20 μm

[Spherical fused silica powder] Average particle size 25 μm
Spherical fused silica powder

[Crystalline silica powder] Crystalline silica powder having an average particle size of 15 μm

[Butadiene rubber particles e]
2 μm methyl methacrylate-butadiene-styrene copolymer

[Silane coupling agent] γ-mercaptopropyltrimethoxysilane

[Curing accelerator] 1,8-diazabicyclo (5,4,0) undecene-7

[Flame retardant] bisphenol A type brominated epoxy resin

[Flame retardant aid] Antimony trioxide

[Release Agent] Carnauba Wax

First, prior to the examples, a molten mixture was prepared by preliminary kneading according to the following method.

[Molten mixture] Each component shown in Table 1 below was used in the proportions shown in the same table, and preliminarily kneaded as follows. That is, the phenol resin was melted on a mixing roll machine (temperature: 150 ° C.), and other components were sequentially added thereto and melt-mixed for 30 minutes. Next, this was cooled and pulverized to obtain a molten mixture.

[0056]

[Table 1]

[0057]

Examples 1 to 13 and Comparative Examples 1 to 3 The components shown in the following Tables 2 to 4 were blended in the proportions shown in the same table, and melt-kneaded for 10 minutes in a mixing roll machine (110 ° C.). Next, the melt was cooled, pulverized, and further tableted to obtain an epoxy resin composition for semiconductor encapsulation.

[0058]

[Table 2]

[0059]

[Table 3]

[0060]

[Table 4]

The following measurements were performed on the thus obtained examples and comparative examples. First, in order to confirm and measure the presence or absence of the formation of aggregates of rubber particles, a 28-pin small outline J-lead package (SOJ-
A semiconductor package of 28p) was molded. This package was scanned using an ultrasonic flaw detector. When an aggregate of rubber particles is formed, it is observed as a black spot. The number of black spots was counted.

Further, the coefficient of linear expansion (α ₁ ), elastic modulus (E), and thermal conductivity of the cured product of the epoxy resin composition for semiconductor encapsulation were measured as follows. JIS K
A bending test piece according to −6911 was molded at a molding temperature of 175 ° C. × a molding time of 120 seconds, and was further post-cured at 175 ° C. × 5 hours. Using the test piece thus obtained, a bending test was performed by an autograph (manufactured by Shimadzu Corporation), and the elastic modulus (E) was obtained from the inclination. Also,
The linear expansion coefficient (α ₁ ) was determined using TMA (manufactured by Rigaku Corporation). Further, α ₁ × E was determined as a low stress index.

Next, the fluidity of the epoxy resin composition for semiconductor encapsulation was evaluated by measuring the spiral flow based on EMMI-1-66.

The results are shown in Tables 5 to 8 below.

[0065]

[Table 5]

[0066]

[Table 6]

[0067]

[Table 7]

[0068]

[Table 8]

From the above Tables 5 to 8, very little or almost no agglomerates of rubber particles were found in the products of Examples. Also, the coefficient of linear expansion was small and the elastic modulus was low. Therefore, it is understood that the low stress index is small and the low stress property is excellent.
Further, it can be seen that the thermal conductivity is high and the fluidity is excellent. Further, with respect to the products of Examples 12 and 13, Example 1 was used.
The two products had lower thermal conductivity than the other examples, and the low stress index tended to be larger in the example 13 product. On the other hand, among comparative examples, comparative examples 2 and 3 having high thermal conductivity have low fluidity and high low stress index. In Comparative Example 1 having a low low stress index, the thermal conductivity was low. It can be seen from these facts that a well-balanced product could not be obtained.

[0070]

As described above, the present invention relates to a semiconductor comprising, in addition to the above-mentioned components A and B, alumina powder (component C), spherical fused silica powder (component D) and butadiene rubber particles (component E). It is an epoxy resin composition for sealing. Thus, instead of using only silica powder as the inorganic filler, together with alumina powder and using spherical fused silica powder as silica powder, good thermal conductivity and low stress and fluidity were obtained. It will be excellent.

The content ratio of the alumina powder (component C) is set to a specific amount in the range of 50 to 90% by volume (= 65 to 95% by weight) in the total amount of the components C and D as the filler. By doing so, a more excellent epoxy resin composition for semiconductor encapsulation, in which the thermal conductivity, fluidity and low stress properties are balanced, can be obtained.

Further, by using a silane coupling agent in addition to the above components A to E, excellent moisture resistance can be obtained. In addition, as the epoxy resin (component A), a biphenyl type epoxy resin and a cresol novolak type epoxy resin can be used. By using at least one of the resins, an epoxy resin composition for semiconductor encapsulation that exhibits excellent reaction curability and good molding workability is obtained.

In the present invention, at least a part of the butadiene-based rubber (component E) is previously blended with at least a part of the phenol resin (component B) and melt-mixed. Resin (component A), alumina powder (component C), spherical fused silica powder (component D)
The epoxy resin composition for semiconductor encapsulation can be obtained by blending and melting and mixing the remaining components including By passing through such a manufacturing method, an epoxy resin composition in which butadiene-based rubber particles (component E) are uniformly dispersed without forming secondary aggregates can be obtained.

The epoxy resin composition for semiconductor encapsulation having such characteristics is particularly suitable as a resin for encapsulating a semiconductor device such as a surface mount type package requiring heat dissipation.

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Claims (7)

[Claims] 1. An epoxy resin composition for semiconductor encapsulation, comprising the following components (A) to (E). (A) Epoxy resin. (B) a phenolic resin. (C) alumina powder. (D) spherical fused silica powder. (E) Butadiene rubber particles. 2. The epoxy resin for semiconductor encapsulation according to claim 1, wherein the total amount of the components (C) and (D) is set to 85% by weight or more of the entire epoxy resin composition for semiconductor encapsulation. Composition. 3. The epoxy for semiconductor encapsulation according to claim 1, wherein the content ratio of the component (C) is set to 50 to 90% by volume based on the total amount of the components (C) and (D). Resin composition. 4. The composition according to claim 1, further comprising a silane coupling agent in addition to the components (A) to (E).
The epoxy resin composition for semiconductor encapsulation according to any one of the above. 5. The epoxy resin as the component (A),
The epoxy resin composition for semiconductor encapsulation according to any one of claims 1 to 4, which is at least one of a biphenyl type epoxy resin and a cresol novolak type epoxy resin. 6. A method for producing an epoxy resin composition for semiconductor encapsulation comprising the following components (A) to (E), wherein at least a part of the following component (B) Parts, and melt-mixing. Then, the remaining components including the following components (A), (C) and (D) are compounded and melt-mixed in the molten mixture. Of epoxy resin composition for use. (A) Epoxy resin. (B) a phenolic resin. (C) alumina powder. (D) spherical fused silica powder. (E) Butadiene rubber particles. 7. A method for producing an epoxy resin composition for semiconductor encapsulation which further comprises a silane coupling agent together with the components (A) to (E), wherein at least a part of the component (B) is prepared in advance. E) At least a part of the component and at least a part of the silane coupling agent are blended and melt-mixed. Then, the component (A),
7. The method for producing an epoxy resin composition for semiconductor encapsulation according to claim 6, wherein the remaining components including the components (C) and (D) are blended and melt-mixed.