JP2003297994A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JP2003297994A
JP2003297994A JP2002093625A JP2002093625A JP2003297994A JP 2003297994 A JP2003297994 A JP 2003297994A JP 2002093625 A JP2002093625 A JP 2002093625A JP 2002093625 A JP2002093625 A JP 2002093625A JP 2003297994 A JP2003297994 A JP 2003297994A
Authority
JP
Japan
Prior art keywords
tab
semiconductor
semiconductor device
chip
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002093625A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003297994A5 (https=
Inventor
Taika Arai
大夏 新井
Fujiaki Nose
藤明 野瀬
Hiroshi Kikuchi
広 菊地
Yoichi Tamaoki
洋一 玉置
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2002093625A priority Critical patent/JP2003297994A/ja
Priority to US10/396,360 priority patent/US6876067B2/en
Publication of JP2003297994A publication Critical patent/JP2003297994A/ja
Publication of JP2003297994A5 publication Critical patent/JP2003297994A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/456Materials
    • H10W70/457Materials of metallic layers on leadframes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/25Arrangements for cooling characterised by their materials
    • H10W40/255Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/321Structures or relative sizes of die-attach connectors
    • H10W72/325Die-attach connectors having a filler embedded in a matrix
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/352Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5449Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2002093625A 2002-03-29 2002-03-29 半導体装置およびその製造方法 Pending JP2003297994A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002093625A JP2003297994A (ja) 2002-03-29 2002-03-29 半導体装置およびその製造方法
US10/396,360 US6876067B2 (en) 2002-03-29 2003-03-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002093625A JP2003297994A (ja) 2002-03-29 2002-03-29 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2003297994A true JP2003297994A (ja) 2003-10-17
JP2003297994A5 JP2003297994A5 (https=) 2005-09-08

Family

ID=29386789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002093625A Pending JP2003297994A (ja) 2002-03-29 2002-03-29 半導体装置およびその製造方法

Country Status (2)

Country Link
US (1) US6876067B2 (https=)
JP (1) JP2003297994A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012060105A (ja) * 2010-08-09 2012-03-22 Renesas Electronics Corp 半導体装置、半導体装置の製造方法、金型、および封止装置
JP2017028131A (ja) * 2015-07-23 2017-02-02 株式会社デンソー パッケージ実装体

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08222710A (ja) * 1995-02-17 1996-08-30 Mitsubishi Electric Corp 半導体装置
WO2003007373A1 (en) * 2001-07-09 2003-01-23 Sumitomo Metal Mining Co., Ltd. Lead frame and its manufacturing method
JP3810411B2 (ja) * 2004-01-23 2006-08-16 Necエレクトロニクス株式会社 集積回路装置
JP4541717B2 (ja) * 2004-02-09 2010-09-08 ルネサスエレクトロニクス株式会社 集積回路装置及びその製造方法
US8008142B2 (en) 2009-03-13 2011-08-30 International Business Machines Corporation Self-aligned Schottky diode
CN111354695B (zh) * 2020-03-11 2022-11-15 珠海格力电器股份有限公司 封装结构及其制造方法
US12021038B2 (en) 2021-06-11 2024-06-25 Macom Technology Solutions Holdings, Inc. Solderable and wire bondable part marking

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041902A (en) * 1989-12-14 1991-08-20 Motorola, Inc. Molded electronic package with compression structures
JP3252569B2 (ja) * 1993-11-09 2002-02-04 株式会社デンソー 絶縁分離基板及びそれを用いた半導体装置及びその製造方法
JPH07335811A (ja) 1994-06-10 1995-12-22 Nippondenso Co Ltd 半導体装置
JPH11284119A (ja) 1998-03-27 1999-10-15 Mitsumi Electric Co Ltd 半導体集積デバイスの放熱構造
US6139977A (en) * 1998-06-10 2000-10-31 Lucent Technologies Inc. Palladium surface coating suitable for wirebonding and process for forming palladium surface coatings
US6429512B1 (en) * 1999-03-16 2002-08-06 Siliconware Precision Industries Co., Ltd. Ball grid array integrated circuit package with palladium coated heat-dissipation device
US6198163B1 (en) * 1999-10-18 2001-03-06 Amkor Technology, Inc. Thin leadframe-type semiconductor package having heat sink with recess and exposed surface
US6512244B1 (en) * 2001-05-07 2003-01-28 Advanced Micro Devices, Inc. SOI device with structure for enhancing carrier recombination and method of fabricating same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012060105A (ja) * 2010-08-09 2012-03-22 Renesas Electronics Corp 半導体装置、半導体装置の製造方法、金型、および封止装置
JP2017028131A (ja) * 2015-07-23 2017-02-02 株式会社デンソー パッケージ実装体

Also Published As

Publication number Publication date
US20030222281A1 (en) 2003-12-04
US6876067B2 (en) 2005-04-05

Similar Documents

Publication Publication Date Title
US5710695A (en) Leadframe ball grid array package
KR100867575B1 (ko) 열방출 능력이 개선된 전력용 모듈 패키지 및 그 제조 방법
US7061080B2 (en) Power module package having improved heat dissipating capability
US6303981B1 (en) Semiconductor package having stacked dice and leadframes and method of fabrication
US6215175B1 (en) Semiconductor package having metal foil die mounting plate
US7863725B2 (en) Power device packages and methods of fabricating the same
KR101311635B1 (ko) 표면 장착 발광 칩 패키지
JP5492367B2 (ja) 窒化ガリウム半導体デバイス用のパッケージ
TWI421997B (zh) 具有下置式引腳之電子封裝件及其方法
KR102172689B1 (ko) 반도체 패키지 및 그 제조방법
JP2982126B2 (ja) 半導体装置およびその製造方法
US5783466A (en) Semiconductor device and method of manufacturing the same
US6876067B2 (en) Semiconductor device
JP2002134674A (ja) 半導体装置およびその製造方法
JP2004111745A (ja) 半導体装置
JP3500015B2 (ja) 半導体装置及びその製造方法
JP2651427B2 (ja) 半導体装置の製造方法
KR20210131139A (ko) 양면 기판 반도체 제조 방법
CN112151513A (zh) 功率管芯封装
JPH09186288A (ja) 半導体装置
EP2309538A2 (en) Package for semiconductor devices
US6147410A (en) Electronic component and method of manufacture
JP3183064B2 (ja) 半導体装置
JPH07176664A (ja) 半導体装置およびその製造方法
JP2004047955A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050310

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050310

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060501

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060516

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060712

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060808

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061010

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20061128

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070403