JP2003297994A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

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Publication number
JP2003297994A
JP2003297994A JP2002093625A JP2002093625A JP2003297994A JP 2003297994 A JP2003297994 A JP 2003297994A JP 2002093625 A JP2002093625 A JP 2002093625A JP 2002093625 A JP2002093625 A JP 2002093625A JP 2003297994 A JP2003297994 A JP 2003297994A
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JP
Japan
Prior art keywords
tab
semiconductor
semiconductor device
chip
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002093625A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003297994A5 (enExample
Inventor
Taika Arai
大夏 新井
Fujiaki Nose
藤明 野瀬
Hiroshi Kikuchi
広 菊地
Yoichi Tamaoki
洋一 玉置
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2002093625A priority Critical patent/JP2003297994A/ja
Priority to US10/396,360 priority patent/US6876067B2/en
Publication of JP2003297994A publication Critical patent/JP2003297994A/ja
Publication of JP2003297994A5 publication Critical patent/JP2003297994A5/ja
Pending legal-status Critical Current

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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2002093625A 2002-03-29 2002-03-29 半導体装置およびその製造方法 Pending JP2003297994A (ja)

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US10/396,360 US6876067B2 (en) 2002-03-29 2003-03-26 Semiconductor device

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Cited By (2)

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JP2012060105A (ja) * 2010-08-09 2012-03-22 Renesas Electronics Corp 半導体装置、半導体装置の製造方法、金型、および封止装置
JP2017028131A (ja) * 2015-07-23 2017-02-02 株式会社デンソー パッケージ実装体

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JPH08222710A (ja) * 1995-02-17 1996-08-30 Mitsubishi Electric Corp 半導体装置
EP1406300B1 (en) * 2001-07-09 2012-02-22 Sumitomo Metal Mining Company Limited Method of manufacturing a lead frame
JP3810411B2 (ja) * 2004-01-23 2006-08-16 Ｎｅｃエレクトロニクス株式会社 集積回路装置
JP4541717B2 (ja) * 2004-02-09 2010-09-08 ルネサスエレクトロニクス株式会社 集積回路装置及びその製造方法
US8008142B2 (en) 2009-03-13 2011-08-30 International Business Machines Corporation Self-aligned Schottky diode
CN111354695B (zh) * 2020-03-11 2022-11-15 珠海格力电器股份有限公司 封装结构及其制造方法
US12021038B2 (en) 2021-06-11 2024-06-25 Macom Technology Solutions Holdings, Inc. Solderable and wire bondable part marking

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US5041902A (en) * 1989-12-14 1991-08-20 Motorola, Inc. Molded electronic package with compression structures
JP3252569B2 (ja) * 1993-11-09 2002-02-04 株式会社デンソー 絶縁分離基板及びそれを用いた半導体装置及びその製造方法
JPH07335811A (ja) 1994-06-10 1995-12-22 Nippondenso Co Ltd 半導体装置
JPH11284119A (ja) 1998-03-27 1999-10-15 Mitsumi Electric Co Ltd 半導体集積デバイスの放熱構造
US6139977A (en) * 1998-06-10 2000-10-31 Lucent Technologies Inc. Palladium surface coating suitable for wirebonding and process for forming palladium surface coatings
US6429512B1 (en) * 1999-03-16 2002-08-06 Siliconware Precision Industries Co., Ltd. Ball grid array integrated circuit package with palladium coated heat-dissipation device
US6198163B1 (en) * 1999-10-18 2001-03-06 Amkor Technology, Inc. Thin leadframe-type semiconductor package having heat sink with recess and exposed surface
US6512244B1 (en) * 2001-05-07 2003-01-28 Advanced Micro Devices, Inc. SOI device with structure for enhancing carrier recombination and method of fabricating same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012060105A (ja) * 2010-08-09 2012-03-22 Renesas Electronics Corp 半導体装置、半導体装置の製造方法、金型、および封止装置
JP2017028131A (ja) * 2015-07-23 2017-02-02 株式会社デンソー パッケージ実装体

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