JP2003297951A5 - - Google Patents
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- Publication number
- JP2003297951A5 JP2003297951A5 JP2002102026A JP2002102026A JP2003297951A5 JP 2003297951 A5 JP2003297951 A5 JP 2003297951A5 JP 2002102026 A JP2002102026 A JP 2002102026A JP 2002102026 A JP2002102026 A JP 2002102026A JP 2003297951 A5 JP2003297951 A5 JP 2003297951A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- forming
- misfet
- film
- information transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 11
- 238000000034 method Methods 0.000 claims 9
- 238000005530 etching Methods 0.000 claims 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 238000004380 ashing Methods 0.000 claims 1
- 239000003990 capacitor Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002102026A JP4336477B2 (ja) | 2002-04-04 | 2002-04-04 | 半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002102026A JP4336477B2 (ja) | 2002-04-04 | 2002-04-04 | 半導体集積回路装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003297951A JP2003297951A (ja) | 2003-10-17 |
| JP2003297951A5 true JP2003297951A5 (cg-RX-API-DMAC7.html) | 2005-09-15 |
| JP4336477B2 JP4336477B2 (ja) | 2009-09-30 |
Family
ID=29388821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002102026A Expired - Fee Related JP4336477B2 (ja) | 2002-04-04 | 2002-04-04 | 半導体集積回路装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4336477B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100576463B1 (ko) * | 2003-12-24 | 2006-05-08 | 주식회사 하이닉스반도체 | 반도체소자의 콘택 형성방법 |
| JP2007149773A (ja) * | 2005-11-24 | 2007-06-14 | Mitsumi Electric Co Ltd | 半導体装置の製造方法 |
| US11973120B2 (en) | 2020-06-24 | 2024-04-30 | Etron Technology, Inc. | Miniaturized transistor structure with controlled dimensions of source/drain and contact-opening and related manufacture method |
| US11972983B2 (en) | 2020-06-24 | 2024-04-30 | Etron Technology, Inc. | Miniaturized transistor structure with controlled dimensions of source/drain and contact-opening and related manufacture method |
| US12490448B2 (en) | 2020-09-09 | 2025-12-02 | Etron Technology, Inc. | Transistor structure with metal interconnection directly connecting gate and drain/source regions |
| US11855218B2 (en) | 2020-09-09 | 2023-12-26 | Etron Technology, Inc. | Transistor structure with metal interconnection directly connecting gate and drain/source regions |
| JP7568603B2 (ja) * | 2021-12-14 | 2024-10-16 | ▲ゆ▼創科技股▲ふん▼有限公司 | ソース／ドレイン及びコンタクト開口の制御された寸法を有する小型化されたトランジスタ構造及び関連する製造方法 |
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2002
- 2002-04-04 JP JP2002102026A patent/JP4336477B2/ja not_active Expired - Fee Related