JP2003273334A - 二重トンネル接合を有する磁気抵抗記憶デバイス - Google Patents

二重トンネル接合を有する磁気抵抗記憶デバイス

Info

Publication number
JP2003273334A
JP2003273334A JP2003065875A JP2003065875A JP2003273334A JP 2003273334 A JP2003273334 A JP 2003273334A JP 2003065875 A JP2003065875 A JP 2003065875A JP 2003065875 A JP2003065875 A JP 2003065875A JP 2003273334 A JP2003273334 A JP 2003273334A
Authority
JP
Japan
Prior art keywords
layer
magnetic
sense
tunnel junction
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003065875A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003273334A5 (enExample
Inventor
Manish Sharma
マニシュ・シャーマ
Lung T Tran
ルン・ティー・トラン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2003273334A publication Critical patent/JP2003273334A/ja
Publication of JP2003273334A5 publication Critical patent/JP2003273334A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3263—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
JP2003065875A 2002-03-15 2003-03-12 二重トンネル接合を有する磁気抵抗記憶デバイス Pending JP2003273334A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/098204 2002-03-15
US10/098,204 US6593608B1 (en) 2002-03-15 2002-03-15 Magneto resistive storage device having double tunnel junction

Publications (2)

Publication Number Publication Date
JP2003273334A true JP2003273334A (ja) 2003-09-26
JP2003273334A5 JP2003273334A5 (enExample) 2005-04-21

Family

ID=22267971

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003065875A Pending JP2003273334A (ja) 2002-03-15 2003-03-12 二重トンネル接合を有する磁気抵抗記憶デバイス

Country Status (6)

Country Link
US (1) US6593608B1 (enExample)
EP (1) EP1345231A1 (enExample)
JP (1) JP2003273334A (enExample)
KR (1) KR20030074469A (enExample)
CN (1) CN100466093C (enExample)
TW (1) TW200304230A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008099287A (ja) * 2006-10-13 2008-04-24 Northern Lights Semiconductor Corp 二進法データ「０」および「１」を表わす磁気トランジスタ回路
CN100499197C (zh) * 2005-12-20 2009-06-10 中国科学院物理研究所 一种适于器件化的磁性隧道结及其用途

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US6611405B1 (en) * 1999-09-16 2003-08-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory device
JP2002299575A (ja) * 2001-03-29 2002-10-11 Toshiba Corp 半導体記憶装置
US6850433B2 (en) * 2002-07-15 2005-02-01 Hewlett-Packard Development Company, Lp. Magnetic memory device and method
US6714444B2 (en) * 2002-08-06 2004-03-30 Grandis, Inc. Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
US6801451B2 (en) * 2002-09-03 2004-10-05 Hewlett-Packard Development Company, L.P. Magnetic memory devices having multiple bits per memory cell
US6577529B1 (en) * 2002-09-03 2003-06-10 Hewlett-Packard Development Company, L.P. Multi-bit magnetic memory device
JP3788964B2 (ja) * 2002-09-10 2006-06-21 株式会社東芝 磁気ランダムアクセスメモリ
US6838740B2 (en) * 2002-09-27 2005-01-04 Grandis, Inc. Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
US7190611B2 (en) * 2003-01-07 2007-03-13 Grandis, Inc. Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
US6667901B1 (en) * 2003-04-29 2003-12-23 Hewlett-Packard Development Company, L.P. Dual-junction magnetic memory device and read method
US7166881B2 (en) * 2003-10-13 2007-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-sensing level MRAM structures
US7072209B2 (en) * 2003-12-29 2006-07-04 Micron Technology, Inc. Magnetic memory having synthetic antiferromagnetic pinned layer
US7268986B2 (en) * 2004-03-31 2007-09-11 Hitachi Global Storage Technologies Netherlands B.V. Double tunnel junction using self-pinned center ferromagnet
US7211874B2 (en) * 2004-04-06 2007-05-01 Headway Technologies, Inc. Magnetic random access memory array with free layer locking mechanism
US20060039183A1 (en) * 2004-05-21 2006-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-sensing level MRAM structures
US7132707B2 (en) * 2004-08-03 2006-11-07 Headway Technologies, Inc. Magnetic random access memory array with proximate read and write lines cladded with magnetic material
CN1606170A (zh) * 2004-09-24 2005-04-13 中国科学院物理研究所 基于双势垒隧道结共振隧穿效应的晶体管
CN100379018C (zh) * 2004-09-24 2008-04-02 中国科学院物理研究所 基于双势垒隧道结共振隧穿效应的晶体管
KR100881292B1 (ko) * 2007-01-23 2009-02-04 삼성전자주식회사 3차원 적층구조를 가지는 저항성 반도체 메모리 장치 및그의 제어방법
JP2008277542A (ja) * 2007-04-27 2008-11-13 Toshiba Corp 磁気ランダムアクセスメモリ及びその製造方法
US8351236B2 (en) 2009-04-08 2013-01-08 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
US8233249B2 (en) * 2010-01-04 2012-07-31 International Business Machines Corporation Magnetic tunnel junction transistor device
US8406040B2 (en) * 2010-01-08 2013-03-26 International Business Machines Corporation Spin-torque based memory device using a magnesium oxide tunnel barrier
US8785966B2 (en) 2011-05-25 2014-07-22 International Business Machines Corporation Magnetic tunnel junction transistor devices
CN103887425B (zh) * 2012-12-21 2019-01-29 三星电子株式会社 磁性结和磁存储器以及用于提供磁性结的方法
US9548095B2 (en) * 2014-08-20 2017-01-17 Everspin Technologies, Inc. Redundant magnetic tunnel junctions in magnetoresistive memory
US10468455B2 (en) 2016-04-12 2019-11-05 International Business Machines Corporation Simplified double magnetic tunnel junctions
US10325639B2 (en) 2017-11-20 2019-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Initialization process for magnetic random access memory (MRAM) production
WO2019143052A1 (ko) * 2018-01-17 2019-07-25 한양대학교 산학협력단 메모리 소자
KR102169622B1 (ko) * 2018-01-17 2020-10-26 한양대학교 산학협력단 메모리 소자
US10522746B1 (en) 2018-08-07 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)
US10797225B2 (en) 2018-09-18 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Dual magnetic tunnel junction (DMTJ) stack design
US10763425B1 (en) 2019-05-30 2020-09-01 Honeywell International Inc. Magnetic tunnel junction based programmable memory cell
CN116156996B (zh) * 2021-11-22 2026-05-19 浙江驰拓科技有限公司 一种磁传感器及其制作方法
CN116148731B (zh) * 2021-11-22 2026-08-07 浙江驰拓科技有限公司 一种磁传感器及其制作方法

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JPH09260743A (ja) * 1996-03-26 1997-10-03 Toshiba Corp 磁気抵抗効果素子及び磁気情報検出方法
JP2000357389A (ja) * 1998-05-19 2000-12-26 Canon Inc 巨大磁気抵抗効果を利用したメモリ素子
JP2001156357A (ja) * 1999-09-16 2001-06-08 Toshiba Corp 磁気抵抗効果素子および磁気記録素子
JP2001217398A (ja) * 2000-02-03 2001-08-10 Rohm Co Ltd 強磁性トンネル接合素子を用いた記憶装置

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US5768069A (en) * 1996-11-27 1998-06-16 International Business Machines Corporation Self-biased dual spin valve sensor
US5768181A (en) * 1997-04-07 1998-06-16 Motorola, Inc. Magnetic device having multi-layer with insulating and conductive layers
US6259644B1 (en) 1997-11-20 2001-07-10 Hewlett-Packard Co Equipotential sense methods for resistive cross point memory cell arrays
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US5991193A (en) 1997-12-02 1999-11-23 International Business Machines Corporation Voltage biasing for magnetic ram with magnetic tunnel memory cells
US6130835A (en) 1997-12-02 2000-10-10 International Business Machines Corporation Voltage biasing for magnetic RAM with magnetic tunnel memory cells
JPH11176149A (ja) * 1997-12-08 1999-07-02 Victor Co Of Japan Ltd 磁性メモリー
US6069820A (en) * 1998-02-20 2000-05-30 Kabushiki Kaisha Toshiba Spin dependent conduction device
US6211559B1 (en) * 1998-02-27 2001-04-03 Motorola, Inc. Symmetric magnetic tunnel device
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JP2000208831A (ja) * 1999-01-18 2000-07-28 Sony Corp 磁気抵抗素子及びこれを用いた磁気デバイス
US6297987B1 (en) 1999-09-30 2001-10-02 The United States Of America As Represented By The Secretary Of The Navy Magnetoresistive spin-injection diode
EP1115164B1 (en) * 2000-01-07 2005-05-25 Sharp Kabushiki Kaisha Magnetoresistive device and magnetic memory using the same
US6172904B1 (en) * 2000-01-27 2001-01-09 Hewlett-Packard Company Magnetic memory cell with symmetric switching characteristics
US6185143B1 (en) 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
US6590806B1 (en) * 2000-03-09 2003-07-08 Hewlett-Packard Development Company, L.P. Multibit magnetic memory element
JP2002246567A (ja) * 2001-02-14 2002-08-30 Toshiba Corp 磁気ランダムアクセスメモリ
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JPH09260743A (ja) * 1996-03-26 1997-10-03 Toshiba Corp 磁気抵抗効果素子及び磁気情報検出方法
JP2000357389A (ja) * 1998-05-19 2000-12-26 Canon Inc 巨大磁気抵抗効果を利用したメモリ素子
JP2001156357A (ja) * 1999-09-16 2001-06-08 Toshiba Corp 磁気抵抗効果素子および磁気記録素子
JP2001217398A (ja) * 2000-02-03 2001-08-10 Rohm Co Ltd 強磁性トンネル接合素子を用いた記憶装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100499197C (zh) * 2005-12-20 2009-06-10 中国科学院物理研究所 一种适于器件化的磁性隧道结及其用途
JP2008099287A (ja) * 2006-10-13 2008-04-24 Northern Lights Semiconductor Corp 二進法データ「０」および「１」を表わす磁気トランジスタ回路

Also Published As

Publication number Publication date
TW200304230A (en) 2003-09-16
KR20030074469A (ko) 2003-09-19
US6593608B1 (en) 2003-07-15
CN100466093C (zh) 2009-03-04
CN1445781A (zh) 2003-10-01
EP1345231A1 (en) 2003-09-17

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