JP2003249626A5 - - Google Patents

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Publication number
JP2003249626A5
JP2003249626A5 JP2002231587A JP2002231587A JP2003249626A5 JP 2003249626 A5 JP2003249626 A5 JP 2003249626A5 JP 2002231587 A JP2002231587 A JP 2002231587A JP 2002231587 A JP2002231587 A JP 2002231587A JP 2003249626 A5 JP2003249626 A5 JP 2003249626A5
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JP
Japan
Prior art keywords
conductivity type
region
memory device
semiconductor memory
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002231587A
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English (en)
Japanese (ja)
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JP2003249626A (ja
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Publication date
Application filed filed Critical
Priority to JP2002231587A priority Critical patent/JP2003249626A/ja
Priority claimed from JP2002231587A external-priority patent/JP2003249626A/ja
Publication of JP2003249626A publication Critical patent/JP2003249626A/ja
Publication of JP2003249626A5 publication Critical patent/JP2003249626A5/ja
Pending legal-status Critical Current

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JP2002231587A 2001-12-18 2002-08-08 半導体記憶装置 Pending JP2003249626A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002231587A JP2003249626A (ja) 2001-12-18 2002-08-08 半導体記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-384739 2001-12-18
JP2001384739 2001-12-18
JP2002231587A JP2003249626A (ja) 2001-12-18 2002-08-08 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2003249626A JP2003249626A (ja) 2003-09-05
JP2003249626A5 true JP2003249626A5 (enExample) 2005-10-27

Family

ID=28676823

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002231587A Pending JP2003249626A (ja) 2001-12-18 2002-08-08 半導体記憶装置

Country Status (1)

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JP (1) JP2003249626A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849564B2 (en) * 2003-02-27 2005-02-01 Sharp Laboratories Of America, Inc. 1R1D R-RAM array with floating p-well
JP4634014B2 (ja) * 2003-05-22 2011-02-16 株式会社日立製作所 半導体記憶装置
KR100733147B1 (ko) 2004-02-25 2007-06-27 삼성전자주식회사 상변화 메모리 장치 및 그 제조 방법
JP4632869B2 (ja) * 2004-06-09 2011-02-16 三洋電機株式会社 メモリ
KR100639206B1 (ko) * 2004-06-30 2006-10-30 주식회사 하이닉스반도체 상변환 기억 소자 및 그 제조방법
JP4783045B2 (ja) * 2004-11-17 2011-09-28 株式会社東芝 スイッチング素子
KR100675289B1 (ko) 2005-11-14 2007-01-29 삼성전자주식회사 상변화 기억 셀 어레이 영역 및 그 제조방법들
US20070267620A1 (en) * 2006-05-18 2007-11-22 Thomas Happ Memory cell including doped phase change material
JP4437297B2 (ja) 2006-06-22 2010-03-24 エルピーダメモリ株式会社 半導体記憶装置及び半導体記憶装置の製造方法
JP2008218492A (ja) * 2007-02-28 2008-09-18 Elpida Memory Inc 相変化メモリ装置
JP4881400B2 (ja) * 2009-03-23 2012-02-22 株式会社東芝 不揮発性半導体記憶装置、及びそのスクリーニング方法

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