JP2003249626A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JP2003249626A
JP2003249626A JP2002231587A JP2002231587A JP2003249626A JP 2003249626 A JP2003249626 A JP 2003249626A JP 2002231587 A JP2002231587 A JP 2002231587A JP 2002231587 A JP2002231587 A JP 2002231587A JP 2003249626 A JP2003249626 A JP 2003249626A
Authority
JP
Japan
Prior art keywords
memory device
type impurity
region
semiconductor memory
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002231587A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003249626A5 (enExample
Inventor
Shigehiro Hisaie
重博 久家
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2002231587A priority Critical patent/JP2003249626A/ja
Publication of JP2003249626A publication Critical patent/JP2003249626A/ja
Publication of JP2003249626A5 publication Critical patent/JP2003249626A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
JP2002231587A 2001-12-18 2002-08-08 半導体記憶装置 Pending JP2003249626A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002231587A JP2003249626A (ja) 2001-12-18 2002-08-08 半導体記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-384739 2001-12-18
JP2001384739 2001-12-18
JP2002231587A JP2003249626A (ja) 2001-12-18 2002-08-08 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2003249626A true JP2003249626A (ja) 2003-09-05
JP2003249626A5 JP2003249626A5 (enExample) 2005-10-27

Family

ID=28676823

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002231587A Pending JP2003249626A (ja) 2001-12-18 2002-08-08 半導体記憶装置

Country Status (1)

Country Link
JP (1) JP2003249626A (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004260162A (ja) * 2003-02-27 2004-09-16 Sharp Corp Ｒｒａｍアレイの製造方法及びｒｒａｍ
JP2004349504A (ja) * 2003-05-22 2004-12-09 Hitachi Ltd 半導体集積回路装置
JP2006019688A (ja) * 2004-06-30 2006-01-19 Hynix Semiconductor Inc 相変化記憶素子及びその製造方法
JP2006024911A (ja) * 2004-06-09 2006-01-26 Sanyo Electric Co Ltd メモリ
JP2006173555A (ja) * 2004-11-17 2006-06-29 Toshiba Corp スイッチング素子と線路切り換え装置及び論理回路
KR100733147B1 (ko) 2004-02-25 2007-06-27 삼성전자주식회사 상변화 메모리 장치 및 그 제조 방법
JP2007329471A (ja) * 2006-05-18 2007-12-20 Qimonda North America Corp ドープされた相変化材料を含むメモリセル
JP2008218492A (ja) * 2007-02-28 2008-09-18 Elpida Memory Inc 相変化メモリ装置
US7638787B2 (en) 2005-11-14 2009-12-29 Samsung Electronics Co., Ltd. Phase changeable memory cell array region and method of forming the same
JP2010225774A (ja) * 2009-03-23 2010-10-07 Toshiba Corp 不揮発性半導体記憶装置、及びそのスクリーニング方法
US7919767B2 (en) 2006-06-22 2011-04-05 Elpida Memory, Inc. Semiconductor memory device and fabrication method thereof

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004260162A (ja) * 2003-02-27 2004-09-16 Sharp Corp Ｒｒａｍアレイの製造方法及びｒｒａｍ
JP2004349504A (ja) * 2003-05-22 2004-12-09 Hitachi Ltd 半導体集積回路装置
KR100733147B1 (ko) 2004-02-25 2007-06-27 삼성전자주식회사 상변화 메모리 장치 및 그 제조 방법
US7700430B2 (en) 2004-02-25 2010-04-20 Samsung Electronics Co., Ltd. Phase-changeable memory device and method of manufacturing the same
US7295463B2 (en) 2004-02-25 2007-11-13 Samsung Electronics Co., Ltd. Phase-changeable memory device and method of manufacturing the same
JP2006024911A (ja) * 2004-06-09 2006-01-26 Sanyo Electric Co Ltd メモリ
JP2006019688A (ja) * 2004-06-30 2006-01-19 Hynix Semiconductor Inc 相変化記憶素子及びその製造方法
JP2006173555A (ja) * 2004-11-17 2006-06-29 Toshiba Corp スイッチング素子と線路切り換え装置及び論理回路
US7638787B2 (en) 2005-11-14 2009-12-29 Samsung Electronics Co., Ltd. Phase changeable memory cell array region and method of forming the same
US8039298B2 (en) 2005-11-14 2011-10-18 Samsung Electronics Co., Ltd. Phase changeable memory cell array region and method of forming the same
JP2007329471A (ja) * 2006-05-18 2007-12-20 Qimonda North America Corp ドープされた相変化材料を含むメモリセル
US7919767B2 (en) 2006-06-22 2011-04-05 Elpida Memory, Inc. Semiconductor memory device and fabrication method thereof
JP2008218492A (ja) * 2007-02-28 2008-09-18 Elpida Memory Inc 相変化メモリ装置
JP2010225774A (ja) * 2009-03-23 2010-10-07 Toshiba Corp 不揮発性半導体記憶装置、及びそのスクリーニング方法

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