JP2003234481A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JP2003234481A JP2003234481A JP2002030638A JP2002030638A JP2003234481A JP 2003234481 A JP2003234481 A JP 2003234481A JP 2002030638 A JP2002030638 A JP 2002030638A JP 2002030638 A JP2002030638 A JP 2002030638A JP 2003234481 A JP2003234481 A JP 2003234481A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor device
- bias
- manufacturing
- uniform
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 230000003321 amplification Effects 0.000 claims abstract description 22
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 22
- 239000012535 impurity Substances 0.000 claims abstract description 21
- 230000000903 blocking effect Effects 0.000 claims description 18
- 230000006698 induction Effects 0.000 claims description 5
- 230000003068 static effect Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 13
- 101800003230 Drosulfakinin-1 Proteins 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002030638A JP2003234481A (ja) | 2002-02-07 | 2002-02-07 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002030638A JP2003234481A (ja) | 2002-02-07 | 2002-02-07 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003234481A true JP2003234481A (ja) | 2003-08-22 |
| JP2003234481A5 JP2003234481A5 (enExample) | 2005-08-18 |
Family
ID=27774316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002030638A Pending JP2003234481A (ja) | 2002-02-07 | 2002-02-07 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003234481A (enExample) |
-
2002
- 2002-02-07 JP JP2002030638A patent/JP2003234481A/ja active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20050202 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050204 |
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| A621 | Written request for application examination |
Effective date: 20050204 Free format text: JAPANESE INTERMEDIATE CODE: A621 |
|
| A977 | Report on retrieval |
Effective date: 20070411 Free format text: JAPANESE INTERMEDIATE CODE: A971007 |
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| A131 | Notification of reasons for refusal |
Effective date: 20070418 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
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| A521 | Written amendment |
Effective date: 20070618 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
| A02 | Decision of refusal |
Effective date: 20070905 Free format text: JAPANESE INTERMEDIATE CODE: A02 |