JP2003208796A5 - - Google Patents

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Publication number
JP2003208796A5
JP2003208796A5 JP2002006424A JP2002006424A JP2003208796A5 JP 2003208796 A5 JP2003208796 A5 JP 2003208796A5 JP 2002006424 A JP2002006424 A JP 2002006424A JP 2002006424 A JP2002006424 A JP 2002006424A JP 2003208796 A5 JP2003208796 A5 JP 2003208796A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002006424A
Other versions
JP2003208796A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002006424A priority Critical patent/JP2003208796A/ja
Priority claimed from JP2002006424A external-priority patent/JP2003208796A/ja
Priority to US10/194,256 priority patent/US6671213B2/en
Priority to DE10238782A priority patent/DE10238782A1/de
Priority to TW091120558A priority patent/TW569239B/zh
Priority to KR10-2002-0058104A priority patent/KR100501126B1/ko
Priority to CNB021434522A priority patent/CN1302482C/zh
Publication of JP2003208796A publication Critical patent/JP2003208796A/ja
Publication of JP2003208796A5 publication Critical patent/JP2003208796A5/ja
Pending legal-status Critical Current

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JP2002006424A 2002-01-15 2002-01-15 薄膜磁性体記憶装置 Pending JP2003208796A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002006424A JP2003208796A (ja) 2002-01-15 2002-01-15 薄膜磁性体記憶装置
US10/194,256 US6671213B2 (en) 2002-01-15 2002-07-15 Thin film magnetic memory device having redundancy repair function
DE10238782A DE10238782A1 (de) 2002-01-15 2002-08-23 Dünnfilm-Magnetspeichervorrichtung mit Redundanzreparaturfunktion
TW091120558A TW569239B (en) 2002-01-15 2002-09-10 Thin film magnetic memory device
KR10-2002-0058104A KR100501126B1 (ko) 2002-01-15 2002-09-25 용장구제기능을 갖는 박막 자성체 기억 장치
CNB021434522A CN1302482C (zh) 2002-01-15 2002-09-26 具有冗长修复功能的薄膜磁性体存储装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002006424A JP2003208796A (ja) 2002-01-15 2002-01-15 薄膜磁性体記憶装置

Publications (2)

Publication Number Publication Date
JP2003208796A JP2003208796A (ja) 2003-07-25
JP2003208796A5 true JP2003208796A5 (ja) 2005-08-04

Family

ID=19191226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002006424A Pending JP2003208796A (ja) 2002-01-15 2002-01-15 薄膜磁性体記憶装置

Country Status (6)

Country Link
US (1) US6671213B2 (ja)
JP (1) JP2003208796A (ja)
KR (1) KR100501126B1 (ja)
CN (1) CN1302482C (ja)
DE (1) DE10238782A1 (ja)
TW (1) TW569239B (ja)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197769A (ja) * 2001-12-21 2003-07-11 Mitsubishi Electric Corp 半導体記憶装置
JP4208507B2 (ja) * 2002-02-04 2009-01-14 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
WO2003098636A2 (en) * 2002-05-16 2003-11-27 Micron Technology, Inc. STACKED 1T-nMEMORY CELL STRUCTURE
US6940748B2 (en) * 2002-05-16 2005-09-06 Micron Technology, Inc. Stacked 1T-nMTJ MRAM structure
US6882553B2 (en) * 2002-08-08 2005-04-19 Micron Technology Inc. Stacked columnar resistive memory structure and its method of formation and operation
JP4405162B2 (ja) * 2003-02-14 2010-01-27 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
US20050086471A1 (en) * 2003-10-20 2005-04-21 Spencer Andrew M. Removable information storage device that includes a master encryption key and encryption keys
JP4641726B2 (ja) * 2004-01-07 2011-03-02 パナソニック株式会社 半導体記憶装置
JP4607685B2 (ja) * 2005-06-30 2011-01-05 富士通セミコンダクター株式会社 半導体メモリ
JP4822828B2 (ja) * 2005-12-13 2011-11-24 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
US7362644B2 (en) * 2005-12-20 2008-04-22 Magic Technologies, Inc. Configurable MRAM and method of configuration
TWI316712B (en) * 2006-06-27 2009-11-01 Silicon Motion Inc Non-volatile memory, repair circuit, and repair method thereof
KR100933839B1 (ko) * 2008-03-10 2009-12-24 주식회사 하이닉스반도체 불휘발성 메모리 소자 및 그 동작 방법
TWI408697B (zh) 2009-08-05 2013-09-11 Etron Technology Inc 記憶體裝置與記憶體控制方法
CN101916214B (zh) * 2010-07-28 2013-03-20 钰创科技股份有限公司 存储器装置与存储器控制方法
US8638596B2 (en) * 2011-07-25 2014-01-28 Qualcomm Incorporated Non-volatile memory saving cell information in a non-volatile memory array
KR20130021760A (ko) 2011-08-23 2013-03-06 삼성전자주식회사 자기터널접합 브레이크 다운을 이용한 안티퓨즈 회로, 및 이를 포함하는 반도체 장치
JP2012119058A (ja) * 2012-02-13 2012-06-21 Fujitsu Semiconductor Ltd 不揮発性半導体メモリ
KR102003851B1 (ko) * 2012-08-31 2019-10-01 에스케이하이닉스 주식회사 메모리 및 이를 포함하는 메모리 시스템
US9543041B2 (en) * 2014-08-29 2017-01-10 Everspin Technologies, Inc. Configuration and testing for magnetoresistive memory to ensure long term continuous operation
US9799412B2 (en) * 2014-09-30 2017-10-24 Sony Semiconductor Solutions Corporation Memory having a plurality of memory cells and a plurality of word lines
JP7310302B2 (ja) * 2019-05-24 2023-07-19 富士通セミコンダクターメモリソリューション株式会社 半導体記憶装置
EP4030436B1 (en) 2020-10-20 2024-05-29 Changxin Memory Technologies, Inc. Repair circuit and memory

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5452251A (en) * 1992-12-03 1995-09-19 Fujitsu Limited Semiconductor memory device for selecting and deselecting blocks of word lines
JP2914171B2 (ja) * 1994-04-25 1999-06-28 松下電器産業株式会社 半導体メモリ装置およびその駆動方法
JPH08279299A (ja) 1995-04-04 1996-10-22 Toshiba Microelectron Corp 半導体集積回路および半導体メモリ
US6259644B1 (en) * 1997-11-20 2001-07-10 Hewlett-Packard Co Equipotential sense methods for resistive cross point memory cell arrays
JPH11232895A (ja) * 1998-02-18 1999-08-27 Matsushita Electric Ind Co Ltd 不揮発性メモリ
JP3848004B2 (ja) * 1999-03-11 2006-11-22 株式会社東芝 半導体メモリ装置及び半導体メモリ装置搭載システム
JP3701160B2 (ja) * 1999-12-24 2005-09-28 シャープ株式会社 冗長機能を有する不揮発性半導体メモリ装置
US6256237B1 (en) * 1999-12-28 2001-07-03 United Microelectronics Corp. Semiconductor device and method for repairing failed memory cell by directly programming fuse memory cell

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