JP2003168652A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JP2003168652A
JP2003168652A JP2001365043A JP2001365043A JP2003168652A JP 2003168652 A JP2003168652 A JP 2003168652A JP 2001365043 A JP2001365043 A JP 2001365043A JP 2001365043 A JP2001365043 A JP 2001365043A JP 2003168652 A JP2003168652 A JP 2003168652A
Authority
JP
Japan
Prior art keywords
layer
cobalt
forming
nickel
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001365043A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003168652A5 (enrdf_load_stackoverflow
Inventor
Yasutoshi Okuno
泰利 奥野
Soichiro Itonaga
総一郎 糸長
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001365043A priority Critical patent/JP2003168652A/ja
Publication of JP2003168652A publication Critical patent/JP2003168652A/ja
Publication of JP2003168652A5 publication Critical patent/JP2003168652A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2001365043A 2001-11-29 2001-11-29 半導体装置及びその製造方法 Pending JP2003168652A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001365043A JP2003168652A (ja) 2001-11-29 2001-11-29 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001365043A JP2003168652A (ja) 2001-11-29 2001-11-29 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003168652A true JP2003168652A (ja) 2003-06-13
JP2003168652A5 JP2003168652A5 (enrdf_load_stackoverflow) 2005-06-30

Family

ID=19175132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001365043A Pending JP2003168652A (ja) 2001-11-29 2001-11-29 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP2003168652A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1492162A3 (en) * 2003-06-27 2006-12-27 Samsung Electronics Co., Ltd. A method of forming a nickel silicide layer
JP2007142347A (ja) * 2005-10-19 2007-06-07 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2012248873A (ja) * 2006-10-11 2012-12-13 Fujitsu Semiconductor Ltd 半導体装置の製造方法
US8679973B2 (en) 2006-10-11 2014-03-25 Fujitsu Semiconductor Limited Method of manufacturing semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09232253A (ja) * 1996-02-20 1997-09-05 Mitsubishi Electric Corp 半導体装置の製造方法
JPH09251967A (ja) * 1996-03-15 1997-09-22 Fujitsu Ltd 半導体装置の製造方法
WO2000017939A1 (en) * 1998-09-22 2000-03-30 Hitachi, Ltd. Semiconductor device and its manufacturing method
JP2000174274A (ja) * 1998-12-01 2000-06-23 Samsung Electronics Co Ltd 半導体装置のセルフアラインシリサイドの形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09232253A (ja) * 1996-02-20 1997-09-05 Mitsubishi Electric Corp 半導体装置の製造方法
JPH09251967A (ja) * 1996-03-15 1997-09-22 Fujitsu Ltd 半導体装置の製造方法
WO2000017939A1 (en) * 1998-09-22 2000-03-30 Hitachi, Ltd. Semiconductor device and its manufacturing method
JP2000174274A (ja) * 1998-12-01 2000-06-23 Samsung Electronics Co Ltd 半導体装置のセルフアラインシリサイドの形成方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1492162A3 (en) * 2003-06-27 2006-12-27 Samsung Electronics Co., Ltd. A method of forming a nickel silicide layer
US7781322B2 (en) 2003-06-27 2010-08-24 Samsung Electronics Co., Ltd. Nickel alloy salicide transistor structure and method for manufacturing same
JP2007142347A (ja) * 2005-10-19 2007-06-07 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2012248873A (ja) * 2006-10-11 2012-12-13 Fujitsu Semiconductor Ltd 半導体装置の製造方法
US8679973B2 (en) 2006-10-11 2014-03-25 Fujitsu Semiconductor Limited Method of manufacturing semiconductor device

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