JP2003151910A - ＧａＮ系半導体基材 - Google Patents

ＧａＮ系半導体基材

Info

Publication number
JP2003151910A
JP2003151910A JP2001352224A JP2001352224A JP2003151910A JP 2003151910 A JP2003151910 A JP 2003151910A JP 2001352224 A JP2001352224 A JP 2001352224A JP 2001352224 A JP2001352224 A JP 2001352224A JP 2003151910 A JP2003151910 A JP 2003151910A
Authority
JP
Japan
Prior art keywords
layer
gan
crystal
grown
algan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001352224A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003151910A5 (enExample
Inventor
Kazuyuki Tadatomo
一行 只友
Hiroaki Okagawa
広明 岡川
Yoichiro Ouchi
洋一郎 大内
Takashi Tsunekawa
高志 常川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Cable Industries Ltd
Original Assignee
Mitsubishi Cable Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Cable Industries Ltd filed Critical Mitsubishi Cable Industries Ltd
Priority to JP2001352224A priority Critical patent/JP2003151910A/ja
Publication of JP2003151910A publication Critical patent/JP2003151910A/ja
Publication of JP2003151910A5 publication Critical patent/JP2003151910A5/ja
Pending legal-status Critical Current

Links

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  • Led Devices (AREA)
JP2001352224A 2001-11-16 2001-11-16 ＧａＮ系半導体基材 Pending JP2003151910A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001352224A JP2003151910A (ja) 2001-11-16 2001-11-16 ＧａＮ系半導体基材

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001352224A JP2003151910A (ja) 2001-11-16 2001-11-16 ＧａＮ系半導体基材

Publications (2)

Publication Number Publication Date
JP2003151910A true JP2003151910A (ja) 2003-05-23
JP2003151910A5 JP2003151910A5 (enExample) 2005-07-07

Family

ID=19164432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001352224A Pending JP2003151910A (ja) 2001-11-16 2001-11-16 ＧａＮ系半導体基材

Country Status (1)

Country Link
JP (1) JP2003151910A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009224704A (ja) * 2008-03-18 2009-10-01 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子、エピタキシャルウエハ、及び窒化物系半導体発光素子を作製する方法
WO2011022128A3 (en) * 2009-08-21 2011-04-14 Bridgelux, Inc. High brightness led utilizing a roughened active layer and conformal cladding
JP2014082496A (ja) * 2012-10-17 2014-05-08 Lg Innotek Co Ltd 発光素子
WO2015156504A1 (ko) * 2014-04-07 2015-10-15 엘지이노텍 주식회사 발광소자 및 이를 구비하는 조명 시스템

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009224704A (ja) * 2008-03-18 2009-10-01 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子、エピタキシャルウエハ、及び窒化物系半導体発光素子を作製する方法
WO2011022128A3 (en) * 2009-08-21 2011-04-14 Bridgelux, Inc. High brightness led utilizing a roughened active layer and conformal cladding
US8232568B2 (en) 2009-08-21 2012-07-31 Bridgelux, Inc. High brightness LED utilizing a roughened active layer and conformal cladding
JP2014082496A (ja) * 2012-10-17 2014-05-08 Lg Innotek Co Ltd 発光素子
US8890200B2 (en) 2012-10-17 2014-11-18 Lg Innotek Co., Ltd. Light emitting device and lighting apparatus having the same
WO2015156504A1 (ko) * 2014-04-07 2015-10-15 엘지이노텍 주식회사 발광소자 및 이를 구비하는 조명 시스템
US9911901B2 (en) 2014-04-07 2018-03-06 Lg Innotek Co., Ltd. Light emitting device having buffer layer with graded composition

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