JP2003151910A5 - - Google Patents

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Publication number
JP2003151910A5
JP2003151910A5 JP2001352224A JP2001352224A JP2003151910A5 JP 2003151910 A5 JP2003151910 A5 JP 2003151910A5 JP 2001352224 A JP2001352224 A JP 2001352224A JP 2001352224 A JP2001352224 A JP 2001352224A JP 2003151910 A5 JP2003151910 A5 JP 2003151910A5
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JP
Japan
Prior art keywords
gan
based semiconductor
semiconductor substrate
substrate
crystal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001352224A
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English (en)
Japanese (ja)
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JP2003151910A (ja
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Publication date
Application filed filed Critical
Priority to JP2001352224A priority Critical patent/JP2003151910A/ja
Priority claimed from JP2001352224A external-priority patent/JP2003151910A/ja
Publication of JP2003151910A publication Critical patent/JP2003151910A/ja
Publication of JP2003151910A5 publication Critical patent/JP2003151910A5/ja
Pending legal-status Critical Current

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JP2001352224A 2001-11-16 2001-11-16 ＧａＮ系半導体基材 Pending JP2003151910A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001352224A JP2003151910A (ja) 2001-11-16 2001-11-16 ＧａＮ系半導体基材

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001352224A JP2003151910A (ja) 2001-11-16 2001-11-16 ＧａＮ系半導体基材

Publications (2)

Publication Number Publication Date
JP2003151910A JP2003151910A (ja) 2003-05-23
JP2003151910A5 true JP2003151910A5 (enExample) 2005-07-07

Family

ID=19164432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001352224A Pending JP2003151910A (ja) 2001-11-16 2001-11-16 ＧａＮ系半導体基材

Country Status (1)

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JP (1) JP2003151910A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4924498B2 (ja) * 2008-03-18 2012-04-25 住友電気工業株式会社 窒化物系半導体発光素子、エピタキシャルウエハ、及び窒化物系半導体発光素子を作製する方法
US8232568B2 (en) * 2009-08-21 2012-07-31 Bridgelux, Inc. High brightness LED utilizing a roughened active layer and conformal cladding
KR101982626B1 (ko) 2012-10-17 2019-05-27 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 장치
KR102175320B1 (ko) 2014-04-07 2020-11-06 엘지이노텍 주식회사 발광소자 및 이를 구비하는 조명 시스템

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